JPH0568097B2 - - Google Patents
Info
- Publication number
- JPH0568097B2 JPH0568097B2 JP58145264A JP14526483A JPH0568097B2 JP H0568097 B2 JPH0568097 B2 JP H0568097B2 JP 58145264 A JP58145264 A JP 58145264A JP 14526483 A JP14526483 A JP 14526483A JP H0568097 B2 JPH0568097 B2 JP H0568097B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- plasma
- present
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 8
- 239000012808 vapor phase Substances 0.000 claims description 5
- 238000010574 gas phase reaction Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
この発明は、プラズマ気相反応方法（以下単に
PCVD法という）に関する。[Detailed Description of the Invention] This invention relates to a plasma gas phase reaction method (hereinafter simply referred to as
(referred to as PCVD method).
この発明はPCVD法であつて、平行平板型の電
極方式を用い、この電極に凹状の開孔又は開溝を
設けたものである。 The present invention is a PCVD method, which uses a parallel plate type electrode system and has concave holes or grooves in the electrodes.
さらに、被形成面を有する基板を陽光柱領域に
配設し、多量に被膜形成を行う方法に関する。 Furthermore, the present invention relates to a method of arranging a substrate having a surface to be formed in a positive column region and forming a large amount of film.
従来、平行平板型のPCVD法は、その被形成面
を陰極（カソード）または陽極（アノード）上ま
たはこれらの電極のごく近傍に発生する陰極暗部
または陽極暗部に配設する方式であるとして知ら
れている。 Conventionally, the parallel plate type PCVD method is known as a method in which the surface to be formed is placed on the cathode or anode, or in the dark area of the cathode or dark area of the anode that occurs in the close vicinity of these electrodes. ing.
かかる従来より公知の方式においては、電極面
積の大きさよりも被形成面の面積を大きく有せし
めることができない。このため、大面積の基板上
に半導体、絶縁体または導体被膜を作製すること
ができるという特長を有しながらも、電極面積の
５〜30倍もの被形成面を有せしめることができな
い。即ち、多量生産ができないという欠点を有し
ていた。 In such conventionally known methods, the area of the surface to be formed cannot be made larger than the area of the electrode. For this reason, although it has the advantage of being able to produce a semiconductor, insulator, or conductor film on a large-area substrate, it is not possible to provide a surface that is 5 to 30 times larger than the electrode area. That is, it has the disadvantage that it cannot be mass produced.
このため、アモルフアス・シリコンを含む非単
結晶半導体を作製せんとする時、その基板１cm2あ
たりの製造価格が１円以上と高価となり、太陽電
池等の単価が安価な製品作製に応用することがで
きないという大きな欠点を有する。 For this reason, when trying to fabricate a non-single-crystal semiconductor containing amorphous silicon, the manufacturing cost per cm 2 of substrate is expensive, at more than 1 yen, making it difficult to apply it to the fabrication of inexpensive products such as solar cells. The major drawback is that it cannot be done.
加えて、被膜形成速度も１〜２Å／秒と十分と
はいえず、これらの点より多量生産性を有し、か
つ被膜成長速度が３〜10Å／秒と大きいPCVD法
が求められていた。 In addition, the film formation rate is 1 to 2 Å/sec, which cannot be said to be sufficient, and from these points, there has been a demand for a PCVD method that is capable of mass productivity and has a high film growth rate of 3 to 10 Å/sec.
本発明はかかる目的を成就するためになされた
ものである。 The present invention has been made to achieve this object.
即ち、本発明方法はプラズマ・グロー放電の陽
光柱を用いたものである。本発明は、陽光柱領域
に被形成面を有する基板を平行に互いに離間して
配設したものであり、かかる陽光柱を用いた
PCVD法に関しては、本発明人の出願になる特許
願57−163279、57−163730（プラズマ気相反応装
置）（昭和57年９月20日出願）に記されている。 That is, the method of the present invention uses a positive column of plasma glow discharge. The present invention is one in which substrates having formation surfaces in a positive column region are arranged in parallel and spaced apart from each other, and using such a positive column.
The PCVD method is described in patent applications 57-163279 and 57-163730 (plasma gas phase reactor) (filed on September 20, 1988) filed by the present inventor.
本発明はかかる陽光柱にて反応をせしめ、多量
生産を行うものである。しかし陽光柱は一般に大
きく空間が広がるため、被形成面近傍でのプラズ
マ密度が減少し、結果として暗部を用いる方式と
同じ程度の被膜成長速度しか得られないという他
の欠点を有する。 The present invention allows the reaction to take place in such a positive light column, thereby achieving mass production. However, since the positive column generally has a large space, the plasma density near the surface to be formed decreases, and as a result, the method has another drawback in that the film growth rate is only about the same as that of a method using a dark region.
かかる欠点を除去して、陽光柱を収束（しまら
せる）せしめ、即ち、放電プラズマのひろがりを
押さえ、さらに中央部でのプラズマ密度を増加さ
せ、活性反応性気体を増加し、ひいては被膜成長
速度を２〜３倍にまで大きくすることを特長とし
ている。 By removing such defects, the positive column can be converged, that is, the spread of the discharge plasma can be suppressed, and the plasma density in the center can be increased, the active reactive gas can be increased, and the film growth rate can be improved. It is characterized by increasing the size by 2 to 3 times.
第１図は従来方法での平行平板型の電極２，３
およびその電気力線５、またこの電気力線に直行
する等電位面１５を示している。そしてこれらの
電極は減圧下の反応容器４内に配設されており、
この電極の一方から７より供給された反応性気体
６が放出され、他方の基板１の被形成面上に被膜
形成される。 Figure 1 shows parallel plate type electrodes 2 and 3 in the conventional method.
, the lines of electric force 5, and the equipotential surface 15 that is perpendicular to the lines of electric force. These electrodes are placed in a reaction vessel 4 under reduced pressure,
The reactive gas 6 supplied from the electrode 7 is released from one of the electrodes, and a film is formed on the surface of the other substrate 1 to be formed.
第１図Ａにおいて、電極２，３間には高周波電
源１０より13.56MHzが加えられる。不要反応生
成物は排気系８にてバルブ１１、圧力調整バル
ブ、１２真空ポンプ、１３より外部に排気され
る。 In FIG. 1A, 13.56 MHz is applied between electrodes 2 and 3 from a high frequency power source 10. Unnecessary reaction products are exhausted to the outside through a valve 11, a pressure adjustment valve, a vacuum pump 12, and a vacuum pump 13 in an exhaust system 8.
かかる従来の方法においては、電気力線５は被
形成面に垂直に加わるため、被形成面をスパツタ
（損傷）してしまうという他の欠点を有する。 This conventional method has another drawback in that the electric lines of force 5 are applied perpendicularly to the surface to be formed, causing spatter (damage) to the surface to be formed.
第１図Ｂは第１図Ａの電極の一方２に対し針状
電極９を互いに離間して配設したものである。こ
こでは電極２（50cm×50cm）、電極２，３の間隔
４cm、針状電極長さ１cm、間隔５cmとした。かか
る針状電極を第１図Ａの装置に配設した時も、電
気力線は針状電極より分散し、ひろがる方向に供
給され、基板１に垂直に加えられる。等電位面１
５は電気力線と直行して設けられるにすぎない。
このため、針状電極はそれなりに第１図Ａに装置
に配設した場合でも放電開始を容易にする等の特
長を有しながらも、被膜の膜質、被膜成長速度を
向上させるものではなかつた。 FIG. 1B shows an arrangement in which needle-shaped electrodes 9 are arranged spaced apart from one another of the electrodes 2 in FIG. 1A. Here, the electrode 2 (50 cm x 50 cm), the interval between electrodes 2 and 3 was 4 cm, the length of the needle electrode was 1 cm, and the interval was 5 cm. When such a needle-shaped electrode is arranged in the apparatus shown in FIG. Equipotential surface 1
5 is simply provided perpendicular to the lines of electric force.
For this reason, although the needle electrode has certain features such as facilitating discharge initiation when arranged in the apparatus shown in Figure 1A, it does not improve the quality of the film or the growth rate of the film. .
第２図は本発明のPCVD法における電極および
その概要を示したものである。この反応炉の他部
は前記した本発明人の特許願に準じる。 FIG. 2 shows an electrode and its outline in the PCVD method of the present invention. The other parts of this reactor are based on the patent application of the present inventor mentioned above.
図面において、この一対の網状電極２，３およ
び被形成面を有する基板１，１′を有する。反応
性気体の供給は２３より石英フード２１に至り、
電極２を通つて陽光柱領域２５に至る。陽光柱領
域には裏面を互いに密接して電気力線５に平行に
基板１，１′を配設せしめてある。またこの基板
を石英カゴで取り囲む形状を有せしめてある。反
応生成物の排気は下側フード２２を経て排気２４
させる。一対を成す電極２，３には外部より高周
波エネルギが供給され、平等電界が形成される領
域２０に放電がされる。 In the drawing, a pair of mesh electrodes 2 and 3 and substrates 1 and 1' having surfaces on which they are formed are shown. The reactive gas is supplied from 23 to the quartz hood 21,
It passes through the electrode 2 and reaches the positive column region 25. In the positive column area, substrates 1 and 1' are disposed parallel to the electric lines of force 5 with their back surfaces in close contact with each other. Further, this substrate is surrounded by a quartz cage. The reaction product is exhausted through the lower hood 22 and into the exhaust 24.
let High frequency energy is supplied from the outside to the pair of electrodes 2 and 3, and a discharge is generated in a region 20 where an equal electric field is formed.
この図面では電極面積は25cmφ（電極間隔15cm）
または70cm×70cm（電極間隔35cm）の形状を有せ
しめ、さらにこの電極に開孔または開溝１４を形
成することにより、本発明の平等電界領域での第
１のグロー放電と開孔または開溝１４に高輝度の
第２のグロー放電とを同時に発生せしめた。 In this drawing, the electrode area is 25cmφ (electrode spacing 15cm)
Alternatively, by forming the electrode in a shape of 70 cm x 70 cm (electrode spacing 35 cm) and further forming an opening or an opening 14 in the electrode, the first glow discharge and the opening or opening in the uniform electric field region of the present invention can be achieved. 14 and a high-intensity second glow discharge were simultaneously generated.
この図面より明らかなごとく、下側電極３は例
えば単に開孔または開溝（0.5〜３cm例えば約１
cmφまたは約１cm巾）で作つたにすぎない。また
他の例では上側電極のごとく、この開孔または開
溝を陽光柱とは逆方向に曲面１６を設け、凹状態
をしている。 As is clear from this drawing, the lower electrode 3 is, for example, simply a hole or groove (0.5 to 3 cm, e.g.
cmφ or approximately 1 cm width). In other examples, as in the case of the upper electrode, this opening or groove is provided with a curved surface 16 in the direction opposite to the positive column, and is in a concave state.
第１図Ｂに示すごとく針状即ち放電面に凸状態
ではなく、逆にこれらを反応空間に対して図面に
示す如くなめらかな曲面を有して凹状にすること
により、電気力線５が領域１７，１８において収
束し、高密度電束領域が一方の電極より他方の電
極に向かつて繊維状に延在して発生することがわ
かる。すなわち従来の凸状（針状）の電界集中領
域を生ぜしめると、その端部（コーナ部）に極端
な電界集中箇所ができる。そのためこの凸部で反
応性気体が反応し「つらら」の如き反応生成物が
できてしまう。そしてこの「つらら」の如き固体
はある大きさとなると離れ被形成面上に付着し、
均一な膜厚の被膜を作るために大きな障害とな
る。 As shown in FIG. 1B, the lines of electric force 5 are not shaped like needles, that is, convex on the discharge surface, but are concave with a smooth curved surface relative to the reaction space, as shown in the drawing, so that the lines of electric force 5 are 17 and 18, and it can be seen that a high-density electric flux region is generated extending like a fiber from one electrode toward the other electrode. That is, when the conventional convex (acicular) electric field concentration region is produced, extreme electric field concentration points are created at the ends (corners). Therefore, the reactive gas reacts at this convex portion, resulting in the formation of reaction products such as "icicles." When these solid objects like icicles reach a certain size, they separate and adhere to the surface on which they are formed.
This is a major obstacle to creating a film with uniform thickness.
他方本発明は第２図の上側電極に示す如く、反
応空間に対し凹状の開孔または開溝を設けた。す
るとその部分の電界は集中させつつも、極端な電
界集中箇所が反応空間側にない。（この構造では
コーナ部は電極内部になり、実質的に除去でき
る）このため、ここから反応性気体を反応空間に
放出した時、この開孔または開溝での反応性気体
が反応し、反応生成物が「つらら」のように発生
することがない。 On the other hand, in the present invention, as shown in the upper electrode of FIG. 2, a concave hole or groove is provided in the reaction space. Then, although the electric field in that area is concentrated, there is no place on the reaction space side where the electric field is extremely concentrated. (With this structure, the corner part becomes inside the electrode and can be virtually removed.) Therefore, when reactive gas is released from here into the reaction space, the reactive gas in this opening or groove reacts, and the reaction occurs. Products do not form like ``icicles''.
即ち反応性気体を活性化させるが、反応は反応
空間で行なわしめ得る。膜厚として、被膜成長速
度を従来の第１図Ａに示す如く平行平板方式に比
べて２〜３倍も高め得る。また本発明の電極構造
を陽光柱方式の電極に配置することにより１バツ
チ当たりの成膜面積を著しく大きくできる。かく
のごとくにすることにより、従来より知られた平
等電界により発生する第１のプラズマ放電２７，
２８に加えて、高密度電束の発生により、高輝度
の第２のプラズマ領域１７，１８を同時に発生さ
せることができた。 That is, the reactive gas is activated, but the reaction can take place in the reaction space. In terms of film thickness, the film growth rate can be increased by two to three times compared to the conventional parallel plate method as shown in FIG. 1A. Further, by arranging the electrode structure of the present invention in a positive column type electrode, the area of film formation per batch can be significantly increased. By doing this, the first plasma discharge 27, which is generated by the conventionally known uniform electric field,
28, high-intensity second plasma regions 17 and 18 could be generated simultaneously by generating high-density electric flux.
その結果、従来、陽光柱２５では横方向への広
がりが大きく、プラズマが分散していたのが、電
極中央部２０内に集まる３５傾向を有せしめるこ
とができた。 As a result, the plasma, which had conventionally spread widely in the lateral direction and dispersed in the positive column 25, now has a tendency to gather within the electrode central portion 20.
さらにこの高輝度プラズマ放電を行わしめるこ
とにより、被膜成長速度を２〜３倍にすることが
できた。 Furthermore, by performing this high-intensity plasma discharge, the film growth rate could be doubled or tripled.
例えば100％シランを用いて、0.1torr、30W
（13.56MHz）、電極面を25cmφとし、電極間隔15
cmとした時、基板10cm、６枚を配設（延べ面積
600cm2）した場合、開孔または開溝１４を有しな
い場合には、被膜成長速度１〜２Å／秒であつた
のが、この開孔または開溝１４を各電極に数ケ所
設けるのみで４〜６Å／秒と２〜３倍に増加させ
ることが可能になつた。 For example, using 100% silane, 0.1torr, 30W
(13.56MHz), electrode surface is 25cmφ, electrode spacing is 15
cm, 6 boards of 10cm are arranged (total area
600 cm 2 ), the film growth rate was 1 to 2 Å/sec when there were no holes or grooves 14, but by providing only a few holes or grooves 14 on each electrode, the film growth rate was 1 to 2 Å/sec. It became possible to increase the speed by 2 to 3 times to ~6 Å/sec.
このことは第１図の従来の方式に比べて、５〜
20倍も基板の配設量を大きくすることができるに
加えて、被膜形成速度を２〜３倍も高めることが
でき、２重に優れたものであることがわかる。 This means that compared to the conventional method shown in Figure 1,
It can be seen that in addition to being able to increase the amount of substrate disposed 20 times, the film formation rate can also be increased by 2 to 3 times, making it doubly superior.
さらに加えて、陽光柱が収束することの結果、
この陽光柱が反応炉の内壁をスパツタし、この内
壁に吸着している水、付着物の不純物を活性化し
て被膜内に取り込み、その膜質を劣化させる可能
性をさらに少なくすることができるという点を考
慮すると、三重にすぐれたものであることが判明
した。 In addition, as a result of the convergence of the positive column,
This positive light column spatters the inner wall of the reactor, activating the water adsorbed on the inner wall and impurities attached to it and incorporating it into the film, further reducing the possibility of deteriorating the film quality. Considering this, it turned out to be Mie's superior product.
以下にさらに実施例を加えて本発明を補完する
実施例 １
第２図を用いたPCVD法において、下側の電極
３に反応空間に対してなめらかな曲面を有して凹
状の反応性気体を供給するための高輝度プラズマ
放電領域を３箇所、上側に４箇所を設けたもので
ある。基板１は石英ホルダ内に配設され、この治
具が３〜５回／分で回転している。反応性気体と
してシランにより非単結晶珪素を作製した。即
ち、基板温度210℃、圧力0.1torr、シラン30c.c.／
分、放電出力30Wとし、5000Åの厚さを有せしめ
るのに20分、被膜成長速度は4.1Å／秒を有して
いる。 Example 1 to supplement the present invention by adding further examples below: In the PCVD method using FIG. Three high-intensity plasma discharge regions are provided for supplying high-intensity plasma, and four regions are provided on the upper side. The substrate 1 is placed in a quartz holder, and this jig is rotated at a rate of 3 to 5 times per minute. Non-single crystal silicon was prepared using silane as a reactive gas. That is, substrate temperature 210℃, pressure 0.1torr, silane 30c.c./
The discharge power was 30 W, and the film growth rate was 4.1 Å/sec for 20 minutes to reach a thickness of 5000 Å.
さらに、基板の配設されている石英ホルダの外
側空間には何等放電が見られず、反応容器のステ
ンレス壁面をスパツタして水等の不純物を混入さ
せる可能性が少ないことがわかる。 Further, no discharge was observed in the outer space of the quartz holder where the substrate was placed, indicating that there is little possibility of spatter on the stainless steel wall of the reaction vessel and contamination of impurities such as water.
基板に10cm×10cmが８枚配設され、反応性気体
の収率（被膜となる成分／供給される気体等）も
第１図Ａに示すごとき形状に加えて８倍近くにな
つた。さらに第２図において開孔または開溝１４
を設けない場合に比べて２倍に高めることができ
た。 Eight 10 cm x 10 cm substrates were arranged, and the yield of reactive gas (components forming the film/supplied gas, etc.) was nearly eight times that of the shape shown in Figure 1A. Furthermore, in FIG.
We were able to double the amount compared to the case without it.
実施例 ２
この実施例はメタン（CH4）とシラン（SiH4）
とを１：１の割合で混入し、SixC1-x（０＜ｘ＜
１）の被膜を作製したものである。Example 2 This example uses methane (CH 4 ) and silane (SiH 4 ).
and Si x C 1-x (0<x<
1) was prepared.
図面に高輝度プラズマ放電が開溝部に観察され
た。そしてかかる局部放電がない場合に比べて、
炭化珪素とするSi−Ｃ結合が多量にあり、化学的
エツチングが起こつても、固い緻密な膜となつて
いた。その他は実施例１と同様である。 In the drawing, a high-intensity plasma discharge was observed in the open groove. And compared to the case where there is no such local discharge,
There are a lot of Si-C bonds that make up silicon carbide, and even when chemical etching occurs, it remains a hard and dense film. The rest is the same as in Example 1.
以上のごとく、本発明は第２図に示されるごと
く、電極に開孔または開溝を設け、この領域で電
気力線を収束せしめ、高輝度放電を発生せしめた
ものである。かかる方式は第１図のごとく、平行
平板電極上に基板を配設した場合、この基板の一
部に高い電束反応領域を有せしめてもよい。しか
し、高輝度放電によるスパツタ効果を考慮する
時、この放電に被形成面を配設し、そのスパツタ
（損傷）を少なくすることは膜質の向上に有効で
あり、結果として本発明方法は陽光柱に基板を電
気力線に平行に配設するPCVD法に特に有効であ
ることがわかつた。 As described above, in the present invention, as shown in FIG. 2, holes or grooves are provided in the electrode, lines of electric force are converged in these regions, and a high-intensity discharge is generated. In this method, as shown in FIG. 1, when a substrate is disposed on parallel plate electrodes, a part of the substrate may have a high electric flux reaction region. However, when considering the spatter effect caused by high-intensity discharge, it is effective to reduce the spatter (damage) by arranging the formation surface in this discharge and to reduce the spatter (damage).As a result, the method of the present invention It was found that this method is particularly effective for the PCVD method, in which the substrate is placed parallel to the lines of electric force.
また本発明の実施例は非単結晶Si、またはSix
C1-xである。しかしシランとゲルマンを用いて
SixGe1-x（０＜ｘ＜１）シランと塩化スズとを用
いてSixSn1-x（０＜ｘ＜１）シランであつても有
効である。また、AlをAlCl3により、またSi3N4
をSiH4とNH3とにより、SiO2をSiH4とN2Oとに
より形成する場合等の絶縁膜をPCVD法で作製す
る場合にも本発明は有効である。 Further, the embodiments of the present invention are non-single crystal Si or Si x
C 1-x . However, using silane and germane
Even if SixGe 1-x (0<x<1) silane and tin chloride are used, Si x Sn 1-x (0<x<1) silane is also effective. Also, Al can be replaced by AlCl 3 and Si 3 N 4
The present invention is also effective when an insulating film is formed by the PCVD method, such as when SiO 2 is formed from SiH 4 and NH 3 and SiO 2 is formed from SiH 4 and N 2 O.
また、本発明方法によつて得られる半導体膜中
に水素またはハロゲン元素に加えてＢまたはＰを
添加してＰ型またはＮ型とすることも可能であ
る。 It is also possible to add B or P in addition to hydrogen or a halogen element to the semiconductor film obtained by the method of the present invention to make it P-type or N-type.
加えて、本発明方法に併用して、400nｍ以下
の紫外光または8μｍ以下の赤外光を照射したプ
ラズマ気相法としても本発明方法は有効である。 In addition, the method of the present invention is also effective as a plasma vapor phase method in which ultraviolet light of 400 nm or less or infrared light of 8 μm or less is irradiated in combination with the method of the present invention.
第１図は従来のプラズマ気相反応装置を示す。
第２図は本発明方法のプラズマ気相反応装置の電
極基板近傍の概要である。
FIG. 1 shows a conventional plasma vapor phase reactor.
FIG. 2 is an outline of the vicinity of the electrode substrate of the plasma vapor phase reactor according to the method of the present invention.
Claims (1)
板型プラズマ・グロー放電を用いて被形成面上に
被膜を形成する気相反応方法において、反応空間
と逆方向に曲面を設けた開孔又は開溝を形成した
平板状電極を用いて、前記開孔又は開溝により反
応空間に電界を集中させつつプラズマ気相反応せ
しめることを特徴とするプラズマ気相反応方法。1 In a gas phase reaction method in which a film is formed on a surface to be formed using a parallel plate type plasma glow discharge in which a pair of electrodes are arranged spaced apart from each other, an opening or A plasma vapor phase reaction method characterized in that a plasma vapor phase reaction is carried out using a flat plate electrode with an opening groove formed therein, while concentrating an electric field in a reaction space through the opening or groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58145264A JPS6037118A (en) | 1983-08-08 | 1983-08-08 | Plasma vapor phase reaction method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58145264A JPS6037118A (en) | 1983-08-08 | 1983-08-08 | Plasma vapor phase reaction method |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5134140A Division JP2564753B2 (en) | 1993-05-13 | 1993-05-13 | Plasma gas phase reaction method |
| JP6284147A Division JP2816943B2 (en) | 1994-10-25 | 1994-10-25 | Plasma gas phase reaction method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6037118A JPS6037118A (en) | 1985-02-26 |
| JPH0568097B2 true JPH0568097B2 (en) | 1993-09-28 |
Family
ID=15381105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58145264A Granted JPS6037118A (en) | 1983-08-08 | 1983-08-08 | Plasma vapor phase reaction method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6037118A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037119A (en) * | 1983-08-08 | 1985-02-26 | Semiconductor Energy Lab Co Ltd | Plasma vapor phase reaction device |
| US4854263B1 (en) * | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
| JP2523070B2 (en) * | 1991-11-22 | 1996-08-07 | 株式会社半導体エネルギー研究所 | Plasma processing device |
| JP2564753B2 (en) * | 1993-05-13 | 1996-12-18 | 株式会社 半導体エネルギー研究所 | Plasma gas phase reaction method |
| KR20110021654A (en) | 2009-08-25 | 2011-03-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device |
| US9177761B2 (en) | 2009-08-25 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Plasma CVD apparatus, method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5491048A (en) * | 1977-12-05 | 1979-07-19 | Plasma Physics Corp | Method of and device for accumulating thin films |
| JPS5842226A (en) * | 1981-09-07 | 1983-03-11 | Nec Corp | Manufacturing device for plasma semiconductor |
-
1983
- 1983-08-08 JP JP58145264A patent/JPS6037118A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5491048A (en) * | 1977-12-05 | 1979-07-19 | Plasma Physics Corp | Method of and device for accumulating thin films |
| JPS5842226A (en) * | 1981-09-07 | 1983-03-11 | Nec Corp | Manufacturing device for plasma semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6037118A (en) | 1985-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH06105691B2 (en) | Method for producing carbon-doped amorphous silicon thin film | |
| JPH0568097B2 (en) | ||
| JP4496401B2 (en) | Plasma CVD apparatus and method for manufacturing solar cell | |
| JP2564748B2 (en) | Plasma vapor phase reaction apparatus and plasma vapor phase reaction method | |
| JPS6331110A (en) | Manufacture of semiconductor device | |
| JP2564753B2 (en) | Plasma gas phase reaction method | |
| JP2989055B2 (en) | Solar cell manufacturing method | |
| JP2540684B2 (en) | Method for manufacturing semiconductor film containing silicon as main component | |
| JPH07193017A (en) | Plasma chemical vapor deposition method | |
| JP3274099B2 (en) | Solar cell manufacturing method | |
| JP2802747B2 (en) | Plasma processing method | |
| JPS6039822A (en) | Thin film forming device | |
| JP2649331B2 (en) | Plasma processing method | |
| JPH0578933B2 (en) | ||
| JPH0244141B2 (en) | ||
| JPS58143589A (en) | Silicon base semiconductor | |
| JPS62283899A (en) | Production of inp single crystal thin film | |
| JPH07147252A (en) | Device and method for plasma vapor reaction | |
| JPS61115354A (en) | Amorphous semiconductor solar cell | |
| JP2739336B2 (en) | Thin film formation method | |
| JP2649330B2 (en) | Plasma processing method | |
| JPS62205618A (en) | Plasma cvd unit | |
| JPH05343713A (en) | Manufacture of amorphous solar cell | |
| JPH0586645B2 (en) | ||
| JPS6050974A (en) | Manufacture of amorphous solar battery |