JPH0566915B2 - - Google Patents
Info
- Publication number
- JPH0566915B2 JPH0566915B2 JP33310987A JP33310987A JPH0566915B2 JP H0566915 B2 JPH0566915 B2 JP H0566915B2 JP 33310987 A JP33310987 A JP 33310987A JP 33310987 A JP33310987 A JP 33310987A JP H0566915 B2 JPH0566915 B2 JP H0566915B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- melt
- cavity
- slider
- crystal growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33310987A JPH0222195A (ja) | 1987-12-29 | 1987-12-29 | 液相結晶成長の方法および装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33310987A JPH0222195A (ja) | 1987-12-29 | 1987-12-29 | 液相結晶成長の方法および装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0222195A JPH0222195A (ja) | 1990-01-25 |
| JPH0566915B2 true JPH0566915B2 (cs) | 1993-09-22 |
Family
ID=18262383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33310987A Granted JPH0222195A (ja) | 1987-12-29 | 1987-12-29 | 液相結晶成長の方法および装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0222195A (cs) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9727999B2 (en) | 2010-12-22 | 2017-08-08 | Koninklijke Philips N.V. | Visualization of flow patterns |
-
1987
- 1987-12-29 JP JP33310987A patent/JPH0222195A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9727999B2 (en) | 2010-12-22 | 2017-08-08 | Koninklijke Philips N.V. | Visualization of flow patterns |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0222195A (ja) | 1990-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3632431A (en) | Method of crystallizing a binary semiconductor compound | |
| CN111321456B (zh) | 低腐蚀坑密度6英寸半绝缘砷化镓晶片 | |
| US4918029A (en) | Method for liquid-phase thin film epitaxy | |
| JPH0566915B2 (cs) | ||
| JPH0566914B2 (cs) | ||
| JP2008300603A (ja) | 半導体製造装置 | |
| JPH0566917B2 (cs) | ||
| JP4248276B2 (ja) | Iii族窒化物の結晶製造方法 | |
| JPH0566916B2 (cs) | ||
| JPH0319211A (ja) | 化学気相成長装置 | |
| JP4784095B2 (ja) | 化合物半導体単結晶とその製造方法および製造装置 | |
| JP2599767B2 (ja) | 溶液成長装置 | |
| JPS58156598A (ja) | 結晶成長法 | |
| JP2003267794A (ja) | 結晶成長方法及び結晶成長装置 | |
| JP2533760B2 (ja) | 混晶の製造方法 | |
| JP2011148693A (ja) | 化合物半導体単結晶基板 | |
| JP4211897B2 (ja) | 液相エピタキシャル成長方法 | |
| JPH07165488A (ja) | 結晶成長装置及び結晶成長方法 | |
| Plaskett | The Synthesis of Bulk GaP from Ga Solutions | |
| JPH01164792A (ja) | 温度差法液相結晶成長の方法 | |
| JPS6385084A (ja) | 結晶の製造方法 | |
| JPH0572359B2 (cs) | ||
| JP2538009B2 (ja) | 液相エピキタシャル成長方法 | |
| Brice et al. | The technology of semiconductor materials preparation | |
| JPH07315984A (ja) | 縦型液相エピタキシャル成長方法及び装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |