JPH0566742B2 - - Google Patents

Info

Publication number
JPH0566742B2
JPH0566742B2 JP59123751A JP12375184A JPH0566742B2 JP H0566742 B2 JPH0566742 B2 JP H0566742B2 JP 59123751 A JP59123751 A JP 59123751A JP 12375184 A JP12375184 A JP 12375184A JP H0566742 B2 JPH0566742 B2 JP H0566742B2
Authority
JP
Japan
Prior art keywords
region
base
collector
layer
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59123751A
Other languages
English (en)
Japanese (ja)
Other versions
JPS613446A (ja
Inventor
Ryota Kasai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59123751A priority Critical patent/JPS613446A/ja
Publication of JPS613446A publication Critical patent/JPS613446A/ja
Publication of JPH0566742B2 publication Critical patent/JPH0566742B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59123751A 1984-06-18 1984-06-18 集積回路装置 Granted JPS613446A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59123751A JPS613446A (ja) 1984-06-18 1984-06-18 集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59123751A JPS613446A (ja) 1984-06-18 1984-06-18 集積回路装置

Publications (2)

Publication Number Publication Date
JPS613446A JPS613446A (ja) 1986-01-09
JPH0566742B2 true JPH0566742B2 (enrdf_load_html_response) 1993-09-22

Family

ID=14868407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59123751A Granted JPS613446A (ja) 1984-06-18 1984-06-18 集積回路装置

Country Status (1)

Country Link
JP (1) JPS613446A (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0256315B1 (de) * 1986-08-13 1992-01-29 Siemens Aktiengesellschaft Integrierte Bipolar- und komplementäre MOS-Transistoren auf einem gemeinsamen Substrat enthaltende Schaltung und Verfahren zu ihrer Herstellung
JPS6360553A (ja) * 1986-09-01 1988-03-16 Nippon Telegr & Teleph Corp <Ntt> 半導体装置とその製造方法

Also Published As

Publication number Publication date
JPS613446A (ja) 1986-01-09

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term