JPH0564457B2 - - Google Patents

Info

Publication number
JPH0564457B2
JPH0564457B2 JP59084028A JP8402884A JPH0564457B2 JP H0564457 B2 JPH0564457 B2 JP H0564457B2 JP 59084028 A JP59084028 A JP 59084028A JP 8402884 A JP8402884 A JP 8402884A JP H0564457 B2 JPH0564457 B2 JP H0564457B2
Authority
JP
Japan
Prior art keywords
region
polycrystalline silicon
semiconductor
semiconductor region
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59084028A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60229370A (ja
Inventor
Motonori Kawaji
Akio Anzai
Shigeo Kuroda
Tetsushi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
NTT Inc
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP59084028A priority Critical patent/JPS60229370A/ja
Publication of JPS60229370A publication Critical patent/JPS60229370A/ja
Publication of JPH0564457B2 publication Critical patent/JPH0564457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Bipolar Transistors (AREA)
JP59084028A 1984-04-27 1984-04-27 自己整合型半導体装置の製造方法 Granted JPS60229370A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59084028A JPS60229370A (ja) 1984-04-27 1984-04-27 自己整合型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59084028A JPS60229370A (ja) 1984-04-27 1984-04-27 自己整合型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60229370A JPS60229370A (ja) 1985-11-14
JPH0564457B2 true JPH0564457B2 (cg-RX-API-DMAC7.html) 1993-09-14

Family

ID=13819087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59084028A Granted JPS60229370A (ja) 1984-04-27 1984-04-27 自己整合型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60229370A (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4803175A (en) * 1987-09-14 1989-02-07 Motorola Inc. Method of fabricating a bipolar semiconductor device with silicide contacts

Also Published As

Publication number Publication date
JPS60229370A (ja) 1985-11-14

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