JPH0561719B2 - - Google Patents

Info

Publication number
JPH0561719B2
JPH0561719B2 JP58242021A JP24202183A JPH0561719B2 JP H0561719 B2 JPH0561719 B2 JP H0561719B2 JP 58242021 A JP58242021 A JP 58242021A JP 24202183 A JP24202183 A JP 24202183A JP H0561719 B2 JPH0561719 B2 JP H0561719B2
Authority
JP
Japan
Prior art keywords
transfer gate
gate
control signal
charge
data line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58242021A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60136088A (ja
Inventor
Masakazu Aoki
Yoshinobu Nakagome
Shinji Horiguchi
Shinichi Ikenaga
Katsuhiro Shimohigashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58242021A priority Critical patent/JPS60136088A/ja
Priority to DE8484116060T priority patent/DE3485595D1/de
Priority to EP84116060A priority patent/EP0148488B1/en
Priority to KR1019840008298A priority patent/KR920011043B1/ko
Priority to US06/686,018 priority patent/US4661929A/en
Publication of JPS60136088A publication Critical patent/JPS60136088A/ja
Publication of JPH0561719B2 publication Critical patent/JPH0561719B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1072—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in multilevel memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
JP58242021A 1983-12-23 1983-12-23 半導体多値記憶装置 Granted JPS60136088A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58242021A JPS60136088A (ja) 1983-12-23 1983-12-23 半導体多値記憶装置
DE8484116060T DE3485595D1 (de) 1983-12-23 1984-12-21 Halbleiterspeicher mit einer speicherstruktur mit vielfachen pegeln.
EP84116060A EP0148488B1 (en) 1983-12-23 1984-12-21 Semiconductor memory having multiple level storage structure
KR1019840008298A KR920011043B1 (ko) 1983-12-23 1984-12-24 반도체 기억장치
US06/686,018 US4661929A (en) 1983-12-23 1984-12-24 Semiconductor memory having multiple level storage structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58242021A JPS60136088A (ja) 1983-12-23 1983-12-23 半導体多値記憶装置

Publications (2)

Publication Number Publication Date
JPS60136088A JPS60136088A (ja) 1985-07-19
JPH0561719B2 true JPH0561719B2 (enrdf_load_stackoverflow) 1993-09-06

Family

ID=17083085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58242021A Granted JPS60136088A (ja) 1983-12-23 1983-12-23 半導体多値記憶装置

Country Status (1)

Country Link
JP (1) JPS60136088A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5033479B2 (ja) * 2007-05-25 2012-09-26 日本電信電話株式会社 読み出し装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599118B2 (ja) * 1978-12-01 1984-02-29 三菱電機株式会社 電荷移送型半導体装置の電荷レベル検出方法
JPS55142486A (en) * 1979-04-25 1980-11-07 Hitachi Ltd Ccd memory
US4300210A (en) * 1979-12-27 1981-11-10 International Business Machines Corp. Calibrated sensing system
JPS58137181A (ja) * 1982-02-05 1983-08-15 Toshiba Corp 半導体メモリ

Also Published As

Publication number Publication date
JPS60136088A (ja) 1985-07-19

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