JPH0560266B2 - - Google Patents
Info
- Publication number
- JPH0560266B2 JPH0560266B2 JP1006584A JP1006584A JPH0560266B2 JP H0560266 B2 JPH0560266 B2 JP H0560266B2 JP 1006584 A JP1006584 A JP 1006584A JP 1006584 A JP1006584 A JP 1006584A JP H0560266 B2 JPH0560266 B2 JP H0560266B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- type
- film
- region
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1006584A JPS60154671A (ja) | 1984-01-25 | 1984-01-25 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1006584A JPS60154671A (ja) | 1984-01-25 | 1984-01-25 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60154671A JPS60154671A (ja) | 1985-08-14 |
| JPH0560266B2 true JPH0560266B2 (fi) | 1993-09-01 |
Family
ID=11739975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1006584A Granted JPS60154671A (ja) | 1984-01-25 | 1984-01-25 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60154671A (fi) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4863562A (en) * | 1988-02-11 | 1989-09-05 | Sgs-Thomson Microelectronics, Inc. | Method for forming a non-planar structure on the surface of a semiconductor substrate |
| EP0339962A3 (en) * | 1988-04-27 | 1990-09-26 | General Electric Company | Field effect semiconductor device |
| US5451798A (en) * | 1993-03-18 | 1995-09-19 | Canon Kabushiki Kaisha | Semiconductor device and its fabrication method |
| US11227925B2 (en) | 2017-04-14 | 2022-01-18 | Ptek Technology Co., Ltd. | Semiconductor device and charging system using the same |
-
1984
- 1984-01-25 JP JP1006584A patent/JPS60154671A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60154671A (ja) | 1985-08-14 |
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