JPH0559991B2 - - Google Patents

Info

Publication number
JPH0559991B2
JPH0559991B2 JP61154387A JP15438786A JPH0559991B2 JP H0559991 B2 JPH0559991 B2 JP H0559991B2 JP 61154387 A JP61154387 A JP 61154387A JP 15438786 A JP15438786 A JP 15438786A JP H0559991 B2 JPH0559991 B2 JP H0559991B2
Authority
JP
Japan
Prior art keywords
substrate
deposited
electron beam
thin film
auger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61154387A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6311672A (ja
Inventor
Shinji Matsui
Katsumi Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP61154387A priority Critical patent/JPS6311672A/ja
Publication of JPS6311672A publication Critical patent/JPS6311672A/ja
Publication of JPH0559991B2 publication Critical patent/JPH0559991B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP61154387A 1986-06-30 1986-06-30 薄膜形成方法 Granted JPS6311672A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61154387A JPS6311672A (ja) 1986-06-30 1986-06-30 薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61154387A JPS6311672A (ja) 1986-06-30 1986-06-30 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS6311672A JPS6311672A (ja) 1988-01-19
JPH0559991B2 true JPH0559991B2 (enExample) 1993-09-01

Family

ID=15583021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61154387A Granted JPS6311672A (ja) 1986-06-30 1986-06-30 薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS6311672A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2784797B2 (ja) * 1989-05-31 1998-08-06 ソニー株式会社 配線形成方法
CN110408910B (zh) 2019-08-16 2020-08-28 中国科学院上海微系统与信息技术研究所 高通量气相沉积设备及气相沉积方法

Also Published As

Publication number Publication date
JPS6311672A (ja) 1988-01-19

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