JPH0559879B2 - - Google Patents

Info

Publication number
JPH0559879B2
JPH0559879B2 JP3466588A JP3466588A JPH0559879B2 JP H0559879 B2 JPH0559879 B2 JP H0559879B2 JP 3466588 A JP3466588 A JP 3466588A JP 3466588 A JP3466588 A JP 3466588A JP H0559879 B2 JPH0559879 B2 JP H0559879B2
Authority
JP
Japan
Prior art keywords
crystal
compound semiconductor
single crystal
semiconductor single
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3466588A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01208396A (ja
Inventor
Kenji Kohiro
Osamu Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIKKO KYOSEKI KK
NITSUKO KYOSEKI KK
Original Assignee
NIKKO KYOSEKI KK
NITSUKO KYOSEKI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIKKO KYOSEKI KK, NITSUKO KYOSEKI KK filed Critical NIKKO KYOSEKI KK
Priority to JP3466588A priority Critical patent/JPH01208396A/ja
Publication of JPH01208396A publication Critical patent/JPH01208396A/ja
Publication of JPH0559879B2 publication Critical patent/JPH0559879B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP3466588A 1988-02-16 1988-02-16 化合物半導体単結晶の製造方法 Granted JPH01208396A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3466588A JPH01208396A (ja) 1988-02-16 1988-02-16 化合物半導体単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3466588A JPH01208396A (ja) 1988-02-16 1988-02-16 化合物半導体単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPH01208396A JPH01208396A (ja) 1989-08-22
JPH0559879B2 true JPH0559879B2 (enrdf_load_stackoverflow) 1993-09-01

Family

ID=12420729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3466588A Granted JPH01208396A (ja) 1988-02-16 1988-02-16 化合物半導体単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPH01208396A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11371164B2 (en) 2017-03-31 2022-06-28 Jx Nippon Mining & Metals Corporation Compound semiconductor and method for producing single crystal of compound semiconductor

Also Published As

Publication number Publication date
JPH01208396A (ja) 1989-08-22

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