JPH0559879B2 - - Google Patents
Info
- Publication number
- JPH0559879B2 JPH0559879B2 JP3466588A JP3466588A JPH0559879B2 JP H0559879 B2 JPH0559879 B2 JP H0559879B2 JP 3466588 A JP3466588 A JP 3466588A JP 3466588 A JP3466588 A JP 3466588A JP H0559879 B2 JPH0559879 B2 JP H0559879B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- compound semiconductor
- single crystal
- semiconductor single
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3466588A JPH01208396A (ja) | 1988-02-16 | 1988-02-16 | 化合物半導体単結晶の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3466588A JPH01208396A (ja) | 1988-02-16 | 1988-02-16 | 化合物半導体単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01208396A JPH01208396A (ja) | 1989-08-22 |
JPH0559879B2 true JPH0559879B2 (enrdf_load_stackoverflow) | 1993-09-01 |
Family
ID=12420729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3466588A Granted JPH01208396A (ja) | 1988-02-16 | 1988-02-16 | 化合物半導体単結晶の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01208396A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109963967B (zh) * | 2017-03-31 | 2021-07-20 | Jx金属株式会社 | 化合物半导体及化合物半导体单晶的制造方法 |
-
1988
- 1988-02-16 JP JP3466588A patent/JPH01208396A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH01208396A (ja) | 1989-08-22 |
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