JPH0557730B2 - - Google Patents
Info
- Publication number
- JPH0557730B2 JPH0557730B2 JP1242600A JP24260089A JPH0557730B2 JP H0557730 B2 JPH0557730 B2 JP H0557730B2 JP 1242600 A JP1242600 A JP 1242600A JP 24260089 A JP24260089 A JP 24260089A JP H0557730 B2 JPH0557730 B2 JP H0557730B2
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- forming
- insulating film
- lower resist
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1242600A JPH02168612A (ja) | 1988-09-19 | 1989-09-19 | 半導体装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63-234521 | 1988-09-19 | ||
| JP23452188 | 1988-09-19 | ||
| JP1242600A JPH02168612A (ja) | 1988-09-19 | 1989-09-19 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02168612A JPH02168612A (ja) | 1990-06-28 |
| JPH0557730B2 true JPH0557730B2 (cg-RX-API-DMAC7.html) | 1993-08-24 |
Family
ID=16972328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1242600A Granted JPH02168612A (ja) | 1988-09-19 | 1989-09-19 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02168612A (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5535147B2 (ja) * | 2011-08-03 | 2014-07-02 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5935446A (ja) * | 1982-08-23 | 1984-02-27 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPS62133722A (ja) * | 1985-12-05 | 1987-06-16 | Ricoh Co Ltd | 半導体装置の製造方法 |
-
1989
- 1989-09-19 JP JP1242600A patent/JPH02168612A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02168612A (ja) | 1990-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS63104338A (ja) | 複合絶縁層に傾斜のついた開口を形成する方法 | |
| US6008121A (en) | Etching high aspect contact holes in solid state devices | |
| JPH09237777A (ja) | 上部層の一部を除去する中間層リソグラフィ法 | |
| JP2002093904A (ja) | デュアルダマシン配線の形成方法 | |
| JPS61171132A (ja) | 貫通孔の形成方法 | |
| US6511902B1 (en) | Fabrication method for forming rounded corner of contact window and via by two-step light etching technique | |
| US20030119329A1 (en) | Method for fabricating semiconductor device capable of improving process margin of self align contact | |
| JPH0557730B2 (cg-RX-API-DMAC7.html) | ||
| JP2950059B2 (ja) | 半導体装置の製造方法 | |
| JP2002203780A (ja) | 半導体装置の製造方法 | |
| JPS5976442A (ja) | 半導体装置の製造方法 | |
| US20010009792A1 (en) | Reduced gate length transistor structures and methods for fabricating the same | |
| KR940009620B1 (ko) | 반도체 셀의 캐패시터 제조방법 | |
| KR20020002682A (ko) | 반도체 소자의 제조방법 | |
| US20030152871A1 (en) | Method to pattern small features by using a re-flowable hard mask | |
| KR950009293B1 (ko) | 식각선택비가 향상된 단층레지스트 패턴 형성방법 | |
| KR100342394B1 (ko) | 반도체 소자의 제조 방법 | |
| KR100365756B1 (ko) | 반도체소자의콘택홀형성방법 | |
| KR100301031B1 (ko) | 반도체장치의제조방법 | |
| JPH0237707A (ja) | 半導体装置の製造方法 | |
| KR930006133B1 (ko) | 모스소자의 콘택트홀 형성방법 | |
| KR100382548B1 (ko) | 반도체 소자의 제조방법 | |
| JP2912002B2 (ja) | 半導体装置の製造方法 | |
| KR100198645B1 (ko) | 반도체 소자의 패턴 방법 | |
| JPH02125614A (ja) | 半導体装置の製造方法 |