JPH0556648B2 - - Google Patents
Info
- Publication number
- JPH0556648B2 JPH0556648B2 JP59241092A JP24109284A JPH0556648B2 JP H0556648 B2 JPH0556648 B2 JP H0556648B2 JP 59241092 A JP59241092 A JP 59241092A JP 24109284 A JP24109284 A JP 24109284A JP H0556648 B2 JPH0556648 B2 JP H0556648B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate electrode
- bias voltage
- glow discharge
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P14/24—
-
- H10P14/3411—
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59241092A JPS61119030A (ja) | 1984-11-14 | 1984-11-14 | 水素化アモルフアス半導体薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59241092A JPS61119030A (ja) | 1984-11-14 | 1984-11-14 | 水素化アモルフアス半導体薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61119030A JPS61119030A (ja) | 1986-06-06 |
| JPH0556648B2 true JPH0556648B2 (cg-RX-API-DMAC10.html) | 1993-08-20 |
Family
ID=17069165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59241092A Granted JPS61119030A (ja) | 1984-11-14 | 1984-11-14 | 水素化アモルフアス半導体薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61119030A (cg-RX-API-DMAC10.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119520A (ja) * | 1986-11-07 | 1988-05-24 | Agency Of Ind Science & Technol | 非晶質シリコン合金堆積法及び装置 |
| JPH02276240A (ja) * | 1989-04-18 | 1990-11-13 | Mitsui Toatsu Chem Inc | 非晶質半導体薄膜の形成方法 |
| JPH02276241A (ja) * | 1989-04-18 | 1990-11-13 | Mitsui Toatsu Chem Inc | 半導体薄膜の形成方法 |
| JP2008115460A (ja) | 2006-10-12 | 2008-05-22 | Canon Inc | 半導体素子の形成方法及び光起電力素子の形成方法 |
-
1984
- 1984-11-14 JP JP59241092A patent/JPS61119030A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61119030A (ja) | 1986-06-06 |
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