JPS61119030A - 水素化アモルフアス半導体薄膜の製造方法 - Google Patents

水素化アモルフアス半導体薄膜の製造方法

Info

Publication number
JPS61119030A
JPS61119030A JP59241092A JP24109284A JPS61119030A JP S61119030 A JPS61119030 A JP S61119030A JP 59241092 A JP59241092 A JP 59241092A JP 24109284 A JP24109284 A JP 24109284A JP S61119030 A JPS61119030 A JP S61119030A
Authority
JP
Japan
Prior art keywords
substrate electrode
plasma
film
thin film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59241092A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0556648B2 (cg-RX-API-DMAC10.html
Inventor
Tomohiko Nakanishi
友彦 中西
Tadashi Hattori
正 服部
Shinya Mizuki
水木　伸也
Kenji Maekawa
前川　謙二
Tetsuya Kato
哲也 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Soken Inc
Original Assignee
Nippon Soken Inc
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Soken Inc, NipponDenso Co Ltd filed Critical Nippon Soken Inc
Priority to JP59241092A priority Critical patent/JPS61119030A/ja
Publication of JPS61119030A publication Critical patent/JPS61119030A/ja
Publication of JPH0556648B2 publication Critical patent/JPH0556648B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Photovoltaic Devices (AREA)
JP59241092A 1984-11-14 1984-11-14 水素化アモルフアス半導体薄膜の製造方法 Granted JPS61119030A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59241092A JPS61119030A (ja) 1984-11-14 1984-11-14 水素化アモルフアス半導体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59241092A JPS61119030A (ja) 1984-11-14 1984-11-14 水素化アモルフアス半導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS61119030A true JPS61119030A (ja) 1986-06-06
JPH0556648B2 JPH0556648B2 (cg-RX-API-DMAC10.html) 1993-08-20

Family

ID=17069165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59241092A Granted JPS61119030A (ja) 1984-11-14 1984-11-14 水素化アモルフアス半導体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS61119030A (cg-RX-API-DMAC10.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119520A (ja) * 1986-11-07 1988-05-24 Agency Of Ind Science & Technol 非晶質シリコン合金堆積法及び装置
JPH02276240A (ja) * 1989-04-18 1990-11-13 Mitsui Toatsu Chem Inc 非晶質半導体薄膜の形成方法
JPH02276241A (ja) * 1989-04-18 1990-11-13 Mitsui Toatsu Chem Inc 半導体薄膜の形成方法
US7534628B2 (en) 2006-10-12 2009-05-19 Canon Kabushiki Kaisha Method for forming semiconductor device and method for forming photovoltaic device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119520A (ja) * 1986-11-07 1988-05-24 Agency Of Ind Science & Technol 非晶質シリコン合金堆積法及び装置
JPH02276240A (ja) * 1989-04-18 1990-11-13 Mitsui Toatsu Chem Inc 非晶質半導体薄膜の形成方法
JPH02276241A (ja) * 1989-04-18 1990-11-13 Mitsui Toatsu Chem Inc 半導体薄膜の形成方法
US7534628B2 (en) 2006-10-12 2009-05-19 Canon Kabushiki Kaisha Method for forming semiconductor device and method for forming photovoltaic device

Also Published As

Publication number Publication date
JPH0556648B2 (cg-RX-API-DMAC10.html) 1993-08-20

Similar Documents

Publication Publication Date Title
US5238866A (en) Plasma enhanced chemical vapor deposition process for producing an amorphous semiconductive surface coating
JPS58199564A (ja) 半導体素子
US4933203A (en) Process for depositing amorphous hydrogenated silicon in a plasma chamber
KR20020021337A (ko) 플라즈마처리 방법 및 장치
CN110629184A (zh) 介质衬底上直接生长二维六方氮化硼的方法
JPH07230960A (ja) プラズマｃｖｄ装置
JPS61119030A (ja) 水素化アモルフアス半導体薄膜の製造方法
CN109148594A (zh) 一种高性能薄膜晶体管的近室温制备工艺及应用
Parashar et al. High-pressure condition of SiH4+ Ar+ H2 plasma for deposition of hydrogenated nanocrystalline silicon film
CN109411533A (zh) 高介电常数栅极氧化物非晶igzo薄膜晶体管的制备方法
JPH0242765A (ja) 太陽電池及びその製造方法
JP2000012468A (ja) 薄膜の製造方法
JP2002289530A (ja) プラズマｃｖｄ装置及び成膜方法
JP2002299266A (ja) アモルファスシリコン薄膜の成膜方法
JPH0273979A (ja) 薄膜形成法
Maharizi et al. GROWTH OF AMORPHOUS DIAMOND-LIKE CARBON (DLC) FILMS
JP4282047B2 (ja) プラズマ処理装置および半導体装置の製造方法
JPH02119125A (ja) アモルファスシリコンゲルマニウム薄膜の製造方法
Morrison et al. Deposition of amorphous silicon solar cells via the pulsed PECVD technique
JPS61119029A (ja) 水素化アモルフアス半導体薄膜の製造方法
JPS57153436A (en) Semiconductor device
JPH1174201A (ja) 非単結晶半導体薄膜の製造方法
JP2002134500A (ja) 絶縁膜の形成方法、その製造装置およびそれを用いた薄膜トランジスタおよびその製造方法
JP2000114188A (ja) 非単結晶半導体薄膜の製造方法
CN112133753A (zh) 一种硅集成bto薄膜及其制备方法