JPH0556616B2 - - Google Patents
Info
- Publication number
- JPH0556616B2 JPH0556616B2 JP58214870A JP21487083A JPH0556616B2 JP H0556616 B2 JPH0556616 B2 JP H0556616B2 JP 58214870 A JP58214870 A JP 58214870A JP 21487083 A JP21487083 A JP 21487083A JP H0556616 B2 JPH0556616 B2 JP H0556616B2
- Authority
- JP
- Japan
- Prior art keywords
- cryopump
- valve
- ion implantation
- ion
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005468 ion implantation Methods 0.000 claims description 18
- 230000008929 regeneration Effects 0.000 claims description 15
- 238000011069 regeneration method Methods 0.000 claims description 15
- 239000001307 helium Substances 0.000 claims description 11
- 229910052734 helium Inorganic materials 0.000 claims description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 10
- 239000003921 oil Substances 0.000 claims description 10
- 238000010884 ion-beam technique Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 29
- 150000002500 ions Chemical class 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004880 explosion Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002371 helium Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58214870A JPS60107247A (ja) | 1983-11-15 | 1983-11-15 | イオン打込装置のクライオポンプ再生装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58214870A JPS60107247A (ja) | 1983-11-15 | 1983-11-15 | イオン打込装置のクライオポンプ再生装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60107247A JPS60107247A (ja) | 1985-06-12 |
| JPH0556616B2 true JPH0556616B2 (enrdf_load_stackoverflow) | 1993-08-20 |
Family
ID=16662925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58214870A Granted JPS60107247A (ja) | 1983-11-15 | 1983-11-15 | イオン打込装置のクライオポンプ再生装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60107247A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4854614B2 (ja) * | 2007-07-09 | 2012-01-18 | アルバック・クライオ株式会社 | イオン注入方法 |
-
1983
- 1983-11-15 JP JP58214870A patent/JPS60107247A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60107247A (ja) | 1985-06-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |