JPH0556027B2 - - Google Patents

Info

Publication number
JPH0556027B2
JPH0556027B2 JP58160895A JP16089583A JPH0556027B2 JP H0556027 B2 JPH0556027 B2 JP H0556027B2 JP 58160895 A JP58160895 A JP 58160895A JP 16089583 A JP16089583 A JP 16089583A JP H0556027 B2 JPH0556027 B2 JP H0556027B2
Authority
JP
Japan
Prior art keywords
film
light
thin film
photoconductivity
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58160895A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6052057A (ja
Inventor
Tsuneo Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP58160895A priority Critical patent/JPS6052057A/ja
Publication of JPS6052057A publication Critical patent/JPS6052057A/ja
Publication of JPH0556027B2 publication Critical patent/JPH0556027B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP58160895A 1983-09-01 1983-09-01 絶縁ゲ−ト電界効果型薄膜トランジスタ Granted JPS6052057A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58160895A JPS6052057A (ja) 1983-09-01 1983-09-01 絶縁ゲ−ト電界効果型薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58160895A JPS6052057A (ja) 1983-09-01 1983-09-01 絶縁ゲ−ト電界効果型薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS6052057A JPS6052057A (ja) 1985-03-23
JPH0556027B2 true JPH0556027B2 (enrdf_load_stackoverflow) 1993-08-18

Family

ID=15724678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58160895A Granted JPS6052057A (ja) 1983-09-01 1983-09-01 絶縁ゲ−ト電界効果型薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS6052057A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61208876A (ja) * 1985-03-14 1986-09-17 Sony Corp 薄膜トランジスタ
FR2593631B1 (fr) * 1986-01-27 1989-02-17 Maurice Francois Ecran d'affichage a matrice active a resistance de grille et procedes de fabrication de cet ecran
JP2756121B2 (ja) * 1988-07-13 1998-05-25 三菱電機株式会社 薄膜トランジスタの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890783A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
JPS6052057A (ja) 1985-03-23

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