JPH0554278B2 - - Google Patents
Info
- Publication number
- JPH0554278B2 JPH0554278B2 JP59004811A JP481184A JPH0554278B2 JP H0554278 B2 JPH0554278 B2 JP H0554278B2 JP 59004811 A JP59004811 A JP 59004811A JP 481184 A JP481184 A JP 481184A JP H0554278 B2 JPH0554278 B2 JP H0554278B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- interlayer insulating
- forming
- insulating film
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011229 interlayer Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000002952 polymeric resin Substances 0.000 claims description 4
- 229920003002 synthetic resin Polymers 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59004811A JPS60149181A (ja) | 1984-01-17 | 1984-01-17 | 超電導多層配線の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59004811A JPS60149181A (ja) | 1984-01-17 | 1984-01-17 | 超電導多層配線の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60149181A JPS60149181A (ja) | 1985-08-06 |
JPH0554278B2 true JPH0554278B2 (enrdf_load_stackoverflow) | 1993-08-12 |
Family
ID=11594126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59004811A Granted JPS60149181A (ja) | 1984-01-17 | 1984-01-17 | 超電導多層配線の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60149181A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5232900A (en) * | 1988-06-09 | 1993-08-03 | Superconductor Development Corporation | Superconductor structure |
JP2630639B2 (ja) * | 1988-10-25 | 1997-07-16 | 宇部興産株式会社 | Nb系超電導体の積層ポリイミド材料 |
JP2827572B2 (ja) * | 1991-05-24 | 1998-11-25 | 日本電気株式会社 | 層状超伝導体回路とその製造方法 |
JP4711249B2 (ja) * | 2002-08-01 | 2011-06-29 | 独立行政法人産業技術総合研究所 | 超伝導集積回路及びその作製方法 |
JP4822715B2 (ja) * | 2005-02-03 | 2011-11-24 | 国立大学法人埼玉大学 | 超伝導フォトン検出器 |
-
1984
- 1984-01-17 JP JP59004811A patent/JPS60149181A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60149181A (ja) | 1985-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1204224A (en) | Lift-off process for fabricating self-aligned contacts | |
EP0046525B1 (en) | Planar multi-level metal-insulator structure comprising a substrate, a conductive interconnection pattern and a superposed conductive structure and a method to form such a structure | |
US4396458A (en) | Method for forming planar metal/insulator structures | |
EP0137927B1 (en) | Process for the controlled etching of tapered vias in borosilicate glass dielectrics | |
US4040891A (en) | Etching process utilizing the same positive photoresist layer for two etching steps | |
JPS62235758A (ja) | 導電性相互接続結線の形成方法 | |
JPH06196399A (ja) | 基板上にパターン付けした皮膜を形成する方法 | |
JPH0613470A (ja) | 半導体装置およびその製造方法 | |
JPS59197139A (ja) | 集積回路の製造方法 | |
JPH0554278B2 (enrdf_load_stackoverflow) | ||
US5209815A (en) | Method for forming patterned films on a substrate | |
JP2502564B2 (ja) | レジストパタ−ンの形成方法 | |
US5506173A (en) | Process of fabricating a dielectric film for a semiconductor device | |
JP2002270691A (ja) | 配線構造 | |
JP2002170882A (ja) | 配線構造の製造方法 | |
JPS6213832B2 (enrdf_load_stackoverflow) | ||
KR960011812B1 (ko) | 반도체 소자의 3층 레지스트 패턴 형성방법 | |
JPS62195190A (ja) | プレ−ナ型ジヨセフソン接合素子の形成法 | |
JPH05243217A (ja) | 半導体装置の製造方法 | |
JPH0722395A (ja) | 半導体装置の製造方法 | |
JP3166912B2 (ja) | 半導体装置の製造方法 | |
JP2991388B2 (ja) | 半導体装置の製造方法 | |
JP3046114B2 (ja) | 半導体集積回路装置の製造方法 | |
JP2001274237A (ja) | 半導体装置の製造方法 | |
JPS60154623A (ja) | 半導体装置の製造方法 |