JPH0552662B2 - - Google Patents
Info
- Publication number
- JPH0552662B2 JPH0552662B2 JP59170265A JP17026584A JPH0552662B2 JP H0552662 B2 JPH0552662 B2 JP H0552662B2 JP 59170265 A JP59170265 A JP 59170265A JP 17026584 A JP17026584 A JP 17026584A JP H0552662 B2 JPH0552662 B2 JP H0552662B2
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- forming
- graft
- resist
- polymerizable material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 51
- 239000010408 film Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 239000000178 monomer Substances 0.000 claims description 12
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 12
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 229920006254 polymer film Polymers 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 9
- 238000010559 graft polymerization reaction Methods 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical group Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 claims description 3
- 239000005050 vinyl trichlorosilane Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 1
- 239000010410 layer Substances 0.000 description 32
- 230000018109 developmental process Effects 0.000 description 11
- 229920000578 graft copolymer Polymers 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000007261 regionalization Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 206010042674 Swelling Diseases 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052752 metalloid Inorganic materials 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920005597 polymer membrane Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- -1 polysiloxane Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59170265A JPS6147641A (ja) | 1984-08-15 | 1984-08-15 | レジストパタ−ンの形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59170265A JPS6147641A (ja) | 1984-08-15 | 1984-08-15 | レジストパタ−ンの形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6147641A JPS6147641A (ja) | 1986-03-08 |
| JPH0552662B2 true JPH0552662B2 (fr) | 1993-08-06 |
Family
ID=15901728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59170265A Granted JPS6147641A (ja) | 1984-08-15 | 1984-08-15 | レジストパタ−ンの形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6147641A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006247581A (ja) * | 2005-03-11 | 2006-09-21 | Fuji Photo Film Co Ltd | パターン形成方法及びそれを用いて得られたパターン材料並びにカラーフィルタ |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58196934A (ja) * | 1982-05-08 | 1983-11-16 | Utsunomiya Daigaku | セラミツクスの精密振動切削法 |
| GB8608114D0 (en) * | 1986-04-03 | 1986-05-08 | Secr Defence | Smectic liquid crystal devices |
| NL8700421A (nl) * | 1987-02-20 | 1988-09-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| JP2641452B2 (ja) * | 1987-07-27 | 1997-08-13 | 株式会社日立製作所 | パターン形成方法 |
| JPH01123232A (ja) * | 1987-11-09 | 1989-05-16 | Mitsubishi Electric Corp | パターン形成方法 |
| JP2521329B2 (ja) * | 1988-07-04 | 1996-08-07 | シャープ株式会社 | 半導体装置の製造方法 |
| JP3980351B2 (ja) * | 2001-08-03 | 2007-09-26 | 富士フイルム株式会社 | 導電性パターン材料及び導電性パターンの形成方法 |
| EP1767989A4 (fr) * | 2004-05-31 | 2010-05-05 | Fujifilm Corp | Méthode de formation de modèle de greffe, matérial de modèle de greffe, méthode de lithographie, méthode de formation de modèle conducteur, modèle conducteur, processus de fabrication de filtre couleur, filtre couleur et processus de fabrication de microlentille |
| JP4986848B2 (ja) * | 2005-05-02 | 2012-07-25 | 富士フイルム株式会社 | グラフトパターン形成方法、それにより得られたグラフトパターン材料及びそれを用いたリソグラフィ方法 |
-
1984
- 1984-08-15 JP JP59170265A patent/JPS6147641A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006247581A (ja) * | 2005-03-11 | 2006-09-21 | Fuji Photo Film Co Ltd | パターン形成方法及びそれを用いて得られたパターン材料並びにカラーフィルタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6147641A (ja) | 1986-03-08 |
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