JPH055177B2 - - Google Patents

Info

Publication number
JPH055177B2
JPH055177B2 JP59218470A JP21847084A JPH055177B2 JP H055177 B2 JPH055177 B2 JP H055177B2 JP 59218470 A JP59218470 A JP 59218470A JP 21847084 A JP21847084 A JP 21847084A JP H055177 B2 JPH055177 B2 JP H055177B2
Authority
JP
Japan
Prior art keywords
semiconductor region
region
semiconductor
forming
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59218470A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6197961A (ja
Inventor
Shuji Ikeda
Satoshi Meguro
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59218470A priority Critical patent/JPS6197961A/ja
Priority to KR1019850005816A priority patent/KR940002772B1/ko
Priority to GB8520741A priority patent/GB2163901B/en
Priority to DE3530897A priority patent/DE3530897C2/de
Publication of JPS6197961A publication Critical patent/JPS6197961A/ja
Priority to GB8720041A priority patent/GB2195496B/en
Priority to GB08720042A priority patent/GB2195497A/en
Priority to US07/218,486 priority patent/US4890148A/en
Priority to SG826/90A priority patent/SG82690G/en
Priority to SG825/90A priority patent/SG82590G/en
Priority to HK947/90A priority patent/HK94790A/xx
Priority to HK946/90A priority patent/HK94690A/xx
Publication of JPH055177B2 publication Critical patent/JPH055177B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G11C11/4125—Cells incorporating circuit means for protecting against loss of information
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
JP59218470A 1984-08-31 1984-10-19 半導体集積回路装置の製造方法 Granted JPS6197961A (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP59218470A JPS6197961A (ja) 1984-10-19 1984-10-19 半導体集積回路装置の製造方法
KR1019850005816A KR940002772B1 (ko) 1984-08-31 1985-08-13 반도체 집적회로 장치 및 그 제조방법
GB8520741A GB2163901B (en) 1984-08-31 1985-08-19 A semiconductor integrated circuit device and a process for manufacturing such a device
DE3530897A DE3530897C2 (de) 1984-08-31 1985-08-29 Statischer RAM-Speicher und ein Verfahren zu dessen Herstellung
GB08720042A GB2195497A (en) 1984-08-31 1987-08-25 A semiconductor integrated circuit device
GB8720041A GB2195496B (en) 1984-08-31 1987-08-25 A semiconductor integrated circuit device
US07/218,486 US4890148A (en) 1984-08-31 1988-07-07 Semiconductor memory cell device with thick insulative layer
SG826/90A SG82690G (en) 1984-08-31 1990-10-11 A semiconductor integrated circuit device and a process for manufacturing such a device
SG825/90A SG82590G (en) 1984-08-31 1990-10-11 A semiconductor integrated circuit device
HK947/90A HK94790A (en) 1984-08-31 1990-11-15 A semiconductor integrated circuit device
HK946/90A HK94690A (en) 1984-08-31 1990-11-15 A semiconductor integrated circuit device and a process for manufacturing such a device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59218470A JPS6197961A (ja) 1984-10-19 1984-10-19 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6197961A JPS6197961A (ja) 1986-05-16
JPH055177B2 true JPH055177B2 (enrdf_load_stackoverflow) 1993-01-21

Family

ID=16720420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59218470A Granted JPS6197961A (ja) 1984-08-31 1984-10-19 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6197961A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2515033B2 (ja) * 1990-04-20 1996-07-10 株式会社東芝 半導体スタティックメモリ装置の製造方法
JP2002033403A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp スタティック型半導体記憶装置
JP4859209B2 (ja) * 2006-03-16 2012-01-25 学校法人日本大学 スタンド兼計量具

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4366613A (en) * 1980-12-17 1983-01-04 Ibm Corporation Method of fabricating an MOS dynamic RAM with lightly doped drain
JPS5954260A (ja) * 1982-09-22 1984-03-29 Hitachi Ltd 半導体記憶装置およびその製造方法

Also Published As

Publication number Publication date
JPS6197961A (ja) 1986-05-16

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