JPH055170B2 - - Google Patents

Info

Publication number
JPH055170B2
JPH055170B2 JP59020323A JP2032384A JPH055170B2 JP H055170 B2 JPH055170 B2 JP H055170B2 JP 59020323 A JP59020323 A JP 59020323A JP 2032384 A JP2032384 A JP 2032384A JP H055170 B2 JPH055170 B2 JP H055170B2
Authority
JP
Japan
Prior art keywords
region
emitter electrode
emitter
layer
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59020323A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60164358A (ja
Inventor
Toshio Ooshima
Naoki Yokoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59020323A priority Critical patent/JPS60164358A/ja
Publication of JPS60164358A publication Critical patent/JPS60164358A/ja
Publication of JPH055170B2 publication Critical patent/JPH055170B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP59020323A 1984-02-06 1984-02-06 半導体装置の製造方法 Granted JPS60164358A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59020323A JPS60164358A (ja) 1984-02-06 1984-02-06 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59020323A JPS60164358A (ja) 1984-02-06 1984-02-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60164358A JPS60164358A (ja) 1985-08-27
JPH055170B2 true JPH055170B2 (en, 2012) 1993-01-21

Family

ID=12023920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59020323A Granted JPS60164358A (ja) 1984-02-06 1984-02-06 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60164358A (en, 2012)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62143464A (ja) * 1985-12-18 1987-06-26 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS63133570A (ja) * 1986-11-26 1988-06-06 Agency Of Ind Science & Technol ホツトエレクトロン・トランジスタの製法
JPH0618205B2 (ja) * 1987-04-21 1994-03-09 三菱電機株式会社 ヘテロ接合バイポ−ラトランジスタの製造方法
JP2015073001A (ja) 2013-10-02 2015-04-16 三菱電機株式会社 半導体素子

Also Published As

Publication number Publication date
JPS60164358A (ja) 1985-08-27

Similar Documents

Publication Publication Date Title
EP0184016B1 (en) Heterojunction bipolar transistor
EP0408252A2 (en) Heterojunction bipolar transistor
US4593457A (en) Method for making gallium arsenide NPN transistor with self-aligned base enhancement to emitter region and metal contact
EP0507454B1 (en) Semiconductor device comprising a heterojunction bipolar transistor and method of making the same
JPH0583195B2 (en, 2012)
JPH0797589B2 (ja) ヘテロ接合型バイポ−ラトランジスタの製造方法
JPH084091B2 (ja) プレ−ナ型ヘテロ接合バイポ−ラデバイスおよびその製作方法
JP2673943B2 (ja) P型領域に低抵抗オーム接点を形成する方法
JPH0622243B2 (ja) ヘテロ接合バイポーラトランジスタ形の半導体デバイスの製造方法
KR100455829B1 (ko) 초자기정렬 이종접합 바이폴라 소자 및 그 제조방법
JPH0241170B2 (en, 2012)
EP0263504B1 (en) Method for manufacturing high-breakdown voltage semiconductor device
EP0197424B1 (en) Process of fabricating a heterojunction bipolar transistor
JPH055170B2 (en, 2012)
US4956689A (en) High speed gallium arsenide transistor and method
KR101118649B1 (ko) 바이폴라 트랜지스터 및 그 형성 방법
JPH10321640A (ja) 半導体装置及びその製造方法
KR100400078B1 (ko) 이종접합 쌍극자 트랜지스터의 제조방법
KR20040038511A (ko) 자기정렬형 이종접합 쌍극자 트랜지스터 및 그의 제조 방법
US5053346A (en) Method for making a high speed gallium arsenide transistor
KR100347520B1 (ko) 이종접합 쌍극자 소자 및 그 제조방법
JP3859149B2 (ja) ヘテロ接合バイポーラトランジスタの製造方法
KR0161200B1 (ko) 바이폴러 트랜지스터의 제조방법
KR950001148B1 (ko) 이종접합 바이폴라 트랜지스터 및 그의 제조방법
JPS5984469A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term