JPH0551177B2 - - Google Patents

Info

Publication number

JPH0551177B2

JPH0551177B2 JP3326586A JP3326586A JPH0551177B2 JP H0551177 B2 JPH0551177 B2 JP H0551177B2 JP 3326586 A JP3326586 A JP 3326586A JP 3326586 A JP3326586 A JP 3326586A JP H0551177 B2 JPH0551177 B2 JP H0551177B2

Authority

JP

Japan

Prior art keywords

gate electrode

film

insulating film

electrode forming

insulating

Prior art date

1986-02-17

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired - Lifetime

Links

• Espacenet
• Global Dossier
• Discuss

• 229920002120 photoresistant polymer Polymers 0.000 claims description 17
• 239000002184 metal Substances 0.000 claims description 14
• 229910052751 metal Inorganic materials 0.000 claims description 14
• 239000000758 substrate Substances 0.000 claims description 11
• 238000004519 manufacturing process Methods 0.000 claims description 8
• 239000004065 semiconductor Substances 0.000 claims description 8
• 238000005530 etching Methods 0.000 claims description 7
• 238000000151 deposition Methods 0.000 claims description 5
• 230000005669 field effect Effects 0.000 claims description 5
• 239000011248 coating agent Substances 0.000 claims description 3
• 238000000576 coating method Methods 0.000 claims description 3
• 229910001218 Gallium arsenide Inorganic materials 0.000 description 21
• 238000000034 method Methods 0.000 description 12
• 229910004298 SiO 2 Inorganic materials 0.000 description 9
• 230000015572 biosynthetic process Effects 0.000 description 4
• 239000007789 gas Substances 0.000 description 3
• 238000001020 plasma etching Methods 0.000 description 3
• 238000006243 chemical reaction Methods 0.000 description 2
• 238000007796 conventional method Methods 0.000 description 2
• 239000012535 impurity Substances 0.000 description 2
• TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 1
• -1 TiW Chemical class 0.000 description 1
• 238000005275 alloying Methods 0.000 description 1
• 230000004888 barrier function Effects 0.000 description 1
• 230000015556 catabolic process Effects 0.000 description 1
• 238000003486 chemical etching Methods 0.000 description 1
• 238000011109 contamination Methods 0.000 description 1
• 230000007423 decrease Effects 0.000 description 1
• 230000006866 deterioration Effects 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 230000005684 electric field Effects 0.000 description 1
• 238000005516 engineering process Methods 0.000 description 1
• 230000008020 evaporation Effects 0.000 description 1
• 238000001704 evaporation Methods 0.000 description 1
• 238000010438 heat treatment Methods 0.000 description 1
• 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
• 230000000873 masking effect Effects 0.000 description 1
• 238000001883 metal evaporation Methods 0.000 description 1
• 150000002739 metals Chemical class 0.000 description 1
• 230000003071 parasitic effect Effects 0.000 description 1
• 229920006395 saturated elastomer Polymers 0.000 description 1
• 238000004904 shortening Methods 0.000 description 1
• 238000005979 thermal decomposition reaction Methods 0.000 description 1