JPH0547994B2 - - Google Patents

Info

Publication number
JPH0547994B2
JPH0547994B2 JP58078218A JP7821883A JPH0547994B2 JP H0547994 B2 JPH0547994 B2 JP H0547994B2 JP 58078218 A JP58078218 A JP 58078218A JP 7821883 A JP7821883 A JP 7821883A JP H0547994 B2 JPH0547994 B2 JP H0547994B2
Authority
JP
Japan
Prior art keywords
film
cdse
chromium
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58078218A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59204273A (ja
Inventor
Tomoji Okada
Juji Kamogawa
Masaaki Kobayashi
Tokuhide Shimojo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noritake Itron Corp
Original Assignee
Ise Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ise Electronics Corp filed Critical Ise Electronics Corp
Priority to JP58078218A priority Critical patent/JPS59204273A/ja
Publication of JPS59204273A publication Critical patent/JPS59204273A/ja
Publication of JPH0547994B2 publication Critical patent/JPH0547994B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium

Landscapes

  • Thin Film Transistor (AREA)
JP58078218A 1983-05-06 1983-05-06 薄膜トランジスタ Granted JPS59204273A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58078218A JPS59204273A (ja) 1983-05-06 1983-05-06 薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58078218A JPS59204273A (ja) 1983-05-06 1983-05-06 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS59204273A JPS59204273A (ja) 1984-11-19
JPH0547994B2 true JPH0547994B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-07-20

Family

ID=13655904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58078218A Granted JPS59204273A (ja) 1983-05-06 1983-05-06 薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS59204273A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1052569C (zh) * 1992-08-27 2000-05-17 株式会社半导体能源研究所 制造半导体器件的方法
TWI221341B (en) * 2003-09-18 2004-09-21 Ind Tech Res Inst Method and material for forming active layer of thin film transistor

Also Published As

Publication number Publication date
JPS59204273A (ja) 1984-11-19

Similar Documents

Publication Publication Date Title
US6320202B1 (en) Bottom-gated thin film transistors comprising germanium in a channel region
JPS60189268A (ja) 半導体装置
JPS5915388B2 (ja) 半導体装置
JPH0547994B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0669094B2 (ja) 電界効果型トランジスタ
JP3008485B2 (ja) 薄膜トランジスタ
JPH0740607B2 (ja) 薄膜トランジスタの製造方法
JPS631072A (ja) 薄膜電界効果トランジスタ
JPH0212031B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS55146961A (en) Semiconductor memory device
JP3085376B2 (ja) 電界効果トランジスタ
WO1990006595A1 (en) Ultrathin submicron mosfet with intrinsic channel
JPH06188272A (ja) ヘテロ接合電界効果トランジスタ
JPS57128070A (en) Field-effect transistor
JPS59189676A (ja) 半導体装置
JPS6292360A (ja) 相補型半導体装置
JPS56108271A (en) Floating gate type non volatile semiconductor memory device
JPS607776A (ja) 薄膜トランジスタ
JPS6122669A (ja) 薄膜トランジスタ及びその製造方法
JPH06232441A (ja) フォトセンサ及びフォトセンサの駆動方法
JPH0410574A (ja) 半導体装置
JPS5890782A (ja) 半導体装置
JPH0140504B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH043433A (ja) 化合物半導体接合型ｆｅｔ
JPS60250675A (ja) 薄膜トランジスタの製造方法