JPH0546971B2 - - Google Patents

Info

Publication number
JPH0546971B2
JPH0546971B2 JP22740986A JP22740986A JPH0546971B2 JP H0546971 B2 JPH0546971 B2 JP H0546971B2 JP 22740986 A JP22740986 A JP 22740986A JP 22740986 A JP22740986 A JP 22740986A JP H0546971 B2 JPH0546971 B2 JP H0546971B2
Authority
JP
Japan
Prior art keywords
emission spectrum
silicon oxide
oxide film
end point
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP22740986A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6381929A (ja
Inventor
Isao Asaishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP22740986A priority Critical patent/JPS6381929A/ja
Publication of JPS6381929A publication Critical patent/JPS6381929A/ja
Publication of JPH0546971B2 publication Critical patent/JPH0546971B2/ja
Granted legal-status Critical Current

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Landscapes

  • Drying Of Semiconductors (AREA)
JP22740986A 1986-09-26 1986-09-26 ドライエッチング終点検出方法 Granted JPS6381929A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22740986A JPS6381929A (ja) 1986-09-26 1986-09-26 ドライエッチング終点検出方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22740986A JPS6381929A (ja) 1986-09-26 1986-09-26 ドライエッチング終点検出方法

Publications (2)

Publication Number Publication Date
JPS6381929A JPS6381929A (ja) 1988-04-12
JPH0546971B2 true JPH0546971B2 (enExample) 1993-07-15

Family

ID=16860382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22740986A Granted JPS6381929A (ja) 1986-09-26 1986-09-26 ドライエッチング終点検出方法

Country Status (1)

Country Link
JP (1) JPS6381929A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0478283B1 (en) * 1990-09-26 1996-12-27 Hitachi, Ltd. Microwave plasma processing method and apparatus
JP3015540B2 (ja) * 1991-09-26 2000-03-06 株式会社東芝 半導体装置の製造方法
US5290383A (en) * 1991-03-24 1994-03-01 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
JP3157605B2 (ja) * 1992-04-28 2001-04-16 東京エレクトロン株式会社 プラズマ処理装置
US5308414A (en) * 1992-12-23 1994-05-03 International Business Machines Corporation Method and apparatus for optical emission end point detection in plasma etching processes
JPH06302556A (ja) * 1993-04-15 1994-10-28 Nec Yamagata Ltd 反応性イオンエッチングの終点検出器
US5928532A (en) * 1996-11-11 1999-07-27 Tokyo Electron Limited Method of detecting end point of plasma processing and apparatus for the same
US6406641B1 (en) 1997-06-17 2002-06-18 Luxtron Corporation Liquid etch endpoint detection and process metrology
JP2006086325A (ja) * 2004-09-16 2006-03-30 Tokyo Electron Ltd クリーニングの終点検出方法

Also Published As

Publication number Publication date
JPS6381929A (ja) 1988-04-12

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Legal Events

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EXPY Cancellation because of completion of term