JPS6381929A - ドライエッチング終点検出方法 - Google Patents

ドライエッチング終点検出方法

Info

Publication number
JPS6381929A
JPS6381929A JP22740986A JP22740986A JPS6381929A JP S6381929 A JPS6381929 A JP S6381929A JP 22740986 A JP22740986 A JP 22740986A JP 22740986 A JP22740986 A JP 22740986A JP S6381929 A JPS6381929 A JP S6381929A
Authority
JP
Japan
Prior art keywords
emission spectrum
oxide film
silicon oxide
end point
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22740986A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0546971B2 (enExample
Inventor
Isao Asaishi
浅石　勲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP22740986A priority Critical patent/JPS6381929A/ja
Publication of JPS6381929A publication Critical patent/JPS6381929A/ja
Publication of JPH0546971B2 publication Critical patent/JPH0546971B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP22740986A 1986-09-26 1986-09-26 ドライエッチング終点検出方法 Granted JPS6381929A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22740986A JPS6381929A (ja) 1986-09-26 1986-09-26 ドライエッチング終点検出方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22740986A JPS6381929A (ja) 1986-09-26 1986-09-26 ドライエッチング終点検出方法

Publications (2)

Publication Number Publication Date
JPS6381929A true JPS6381929A (ja) 1988-04-12
JPH0546971B2 JPH0546971B2 (enExample) 1993-07-15

Family

ID=16860382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22740986A Granted JPS6381929A (ja) 1986-09-26 1986-09-26 ドライエッチング終点検出方法

Country Status (1)

Country Link
JP (1) JPS6381929A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5261998A (en) * 1991-09-26 1993-11-16 Kabushiki Kaisha Toshiba Method for detecting an end point of etching in semiconductor manufacture using the emission spectrum of helium
US5308414A (en) * 1992-12-23 1994-05-03 International Business Machines Corporation Method and apparatus for optical emission end point detection in plasma etching processes
US5322590A (en) * 1991-03-24 1994-06-21 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
JPH06302556A (ja) * 1993-04-15 1994-10-28 Nec Yamagata Ltd 反応性イオンエッチングの終点検出器
US5374327A (en) * 1992-04-28 1994-12-20 Tokyo Electron Limited Plasma processing method
US5785807A (en) * 1990-09-26 1998-07-28 Hitachi, Ltd. Microwave plasma processing method and apparatus
US5928532A (en) * 1996-11-11 1999-07-27 Tokyo Electron Limited Method of detecting end point of plasma processing and apparatus for the same
US6406641B1 (en) 1997-06-17 2002-06-18 Luxtron Corporation Liquid etch endpoint detection and process metrology
JP2006086325A (ja) * 2004-09-16 2006-03-30 Tokyo Electron Ltd クリーニングの終点検出方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5785807A (en) * 1990-09-26 1998-07-28 Hitachi, Ltd. Microwave plasma processing method and apparatus
US5322590A (en) * 1991-03-24 1994-06-21 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
US5261998A (en) * 1991-09-26 1993-11-16 Kabushiki Kaisha Toshiba Method for detecting an end point of etching in semiconductor manufacture using the emission spectrum of helium
US5374327A (en) * 1992-04-28 1994-12-20 Tokyo Electron Limited Plasma processing method
US5308414A (en) * 1992-12-23 1994-05-03 International Business Machines Corporation Method and apparatus for optical emission end point detection in plasma etching processes
JPH06302556A (ja) * 1993-04-15 1994-10-28 Nec Yamagata Ltd 反応性イオンエッチングの終点検出器
US5928532A (en) * 1996-11-11 1999-07-27 Tokyo Electron Limited Method of detecting end point of plasma processing and apparatus for the same
US6406641B1 (en) 1997-06-17 2002-06-18 Luxtron Corporation Liquid etch endpoint detection and process metrology
JP2006086325A (ja) * 2004-09-16 2006-03-30 Tokyo Electron Ltd クリーニングの終点検出方法

Also Published As

Publication number Publication date
JPH0546971B2 (enExample) 1993-07-15

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