JPH0543172B2 - - Google Patents

Info

Publication number
JPH0543172B2
JPH0543172B2 JP60218544A JP21854485A JPH0543172B2 JP H0543172 B2 JPH0543172 B2 JP H0543172B2 JP 60218544 A JP60218544 A JP 60218544A JP 21854485 A JP21854485 A JP 21854485A JP H0543172 B2 JPH0543172 B2 JP H0543172B2
Authority
JP
Japan
Prior art keywords
resist
semiconductor substrate
developer
developing
rotation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60218544A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6278820A (ja
Inventor
Katsumi Samejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP21854485A priority Critical patent/JPS6278820A/ja
Publication of JPS6278820A publication Critical patent/JPS6278820A/ja
Publication of JPH0543172B2 publication Critical patent/JPH0543172B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP21854485A 1985-10-01 1985-10-01 レジスト現像方法 Granted JPS6278820A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21854485A JPS6278820A (ja) 1985-10-01 1985-10-01 レジスト現像方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21854485A JPS6278820A (ja) 1985-10-01 1985-10-01 レジスト現像方法

Publications (2)

Publication Number Publication Date
JPS6278820A JPS6278820A (ja) 1987-04-11
JPH0543172B2 true JPH0543172B2 (enrdf_load_stackoverflow) 1993-06-30

Family

ID=16721593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21854485A Granted JPS6278820A (ja) 1985-10-01 1985-10-01 レジスト現像方法

Country Status (1)

Country Link
JP (1) JPS6278820A (enrdf_load_stackoverflow)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5422777A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Invertible processing device
JPS5452984A (en) * 1977-10-04 1979-04-25 Nec Corp Semiconductor cleansing method
JPS57192955A (en) * 1981-05-25 1982-11-27 Toppan Printing Co Ltd Developing method
JPS593549A (ja) * 1982-06-30 1984-01-10 Hitachi Ltd フアイル管理方式

Also Published As

Publication number Publication date
JPS6278820A (ja) 1987-04-11

Similar Documents

Publication Publication Date Title
JPH0543172B2 (enrdf_load_stackoverflow)
US3951659A (en) Method for resist coating of a glass substrate
JPS5931852B2 (ja) フォトレジスト露光用マスク
JPH03118546A (ja) フォトレジスト処理装置
JP4267298B2 (ja) 半導体素子の製造方法
JPS6347924A (ja) 半導体装置の製造方法
JPH03190215A (ja) レジスト膜の塗布方法
JPH0691066B2 (ja) 感光性有機樹脂膜の形成方法
JPS5838605Y2 (ja) 回転塗布装置
JPH0253060A (ja) 半導体装置の製造方法
CN118534732A (zh) 基于光刻胶展宽的轮廓图案形成工艺及微观轮廓图案结构
JPS58145126A (ja) 半導体装置の製造方法
JPS6236823A (ja) レジストパタ−ン形成方法
JPS61232614A (ja) 半導体装置のホトエツチング作業方法
JPH0462166B2 (enrdf_load_stackoverflow)
JPS6128950A (ja) パタ−ン作成方法
JPH0425114A (ja) レジストパターン形成方法
JPH03246927A (ja) レジストパターンの形成方法
JPH02183517A (ja) 微細パターン形成方法
JPH05144722A (ja) フオトレジストパターンの形成方法
JPS61198632A (ja) レジストパタ−ンアンダ−カツト形状の形成方法
JP2000208389A (ja) 半導体装置の製造方法
JPH033376B2 (enrdf_load_stackoverflow)
JPH0379022A (ja) ウエハ基板のパターン形成方法
JPS63133630A (ja) 半導体素子の製造方法