JPH0542833B2 - - Google Patents

Info

Publication number
JPH0542833B2
JPH0542833B2 JP58207071A JP20707183A JPH0542833B2 JP H0542833 B2 JPH0542833 B2 JP H0542833B2 JP 58207071 A JP58207071 A JP 58207071A JP 20707183 A JP20707183 A JP 20707183A JP H0542833 B2 JPH0542833 B2 JP H0542833B2
Authority
JP
Japan
Prior art keywords
film
semiconductor film
amorphous silicon
semiconductor
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58207071A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6098680A (ja
Inventor
Tsuneo Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP58207071A priority Critical patent/JPS6098680A/ja
Publication of JPS6098680A publication Critical patent/JPS6098680A/ja
Publication of JPH0542833B2 publication Critical patent/JPH0542833B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]

Landscapes

  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58207071A 1983-11-04 1983-11-04 電界効果型薄膜トランジスタ Granted JPS6098680A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58207071A JPS6098680A (ja) 1983-11-04 1983-11-04 電界効果型薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58207071A JPS6098680A (ja) 1983-11-04 1983-11-04 電界効果型薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS6098680A JPS6098680A (ja) 1985-06-01
JPH0542833B2 true JPH0542833B2 (enrdf_load_stackoverflow) 1993-06-29

Family

ID=16533715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58207071A Granted JPS6098680A (ja) 1983-11-04 1983-11-04 電界効果型薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS6098680A (enrdf_load_stackoverflow)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6187371A (ja) * 1984-10-05 1986-05-02 Hitachi Ltd 薄膜半導体装置
US5648663A (en) * 1985-08-05 1997-07-15 Canon Kabushiki Kaisha Semiconductor structure having transistor and other elements on a common substrate and process for producing the same
GB2220792B (en) * 1988-07-13 1991-12-18 Seikosha Kk Silicon thin film transistor and method for producing the same
JPH06101563B2 (ja) * 1988-07-19 1994-12-12 工業技術院長 薄膜電界効果トランジスタとその製造方法
KR920010885A (ko) * 1990-11-30 1992-06-27 카나이 쯔또무 박막반도체와 그 제조방법 및 제조장치 및 화상처리장치
JPH06291316A (ja) * 1992-02-25 1994-10-18 Semiconductor Energy Lab Co Ltd 薄膜状絶縁ゲイト型半導体装置およびその作製方法
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
JPH0521798A (ja) * 1991-02-18 1993-01-29 Alps Electric Co Ltd 薄膜トランジスタ
TW222345B (en) * 1992-02-25 1994-04-11 Semicondustor Energy Res Co Ltd Semiconductor and its manufacturing method
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US5796116A (en) * 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
JP2762968B2 (ja) * 1995-09-28 1998-06-11 日本電気株式会社 電界効果型薄膜トランジスタの製造方法
US9176353B2 (en) 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8921858B2 (en) 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7998800B2 (en) 2007-07-06 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI575293B (zh) 2007-07-20 2017-03-21 半導體能源研究所股份有限公司 液晶顯示裝置
US8330887B2 (en) 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US7968885B2 (en) 2007-08-07 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US8101444B2 (en) 2007-08-17 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9054206B2 (en) 2007-08-17 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5058909B2 (ja) 2007-08-17 2012-10-24 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び薄膜トランジスタの作製方法
JP2009071289A (ja) 2007-08-17 2009-04-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI605509B (zh) 2007-09-03 2017-11-11 半導體能源研究所股份有限公司 薄膜電晶體和顯示裝置的製造方法
JP5395384B2 (ja) 2007-09-07 2014-01-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP5371341B2 (ja) 2007-09-21 2013-12-18 株式会社半導体エネルギー研究所 電気泳動方式の表示装置
US20090090915A1 (en) 2007-10-05 2009-04-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
JP5395415B2 (ja) 2007-12-03 2014-01-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US7910929B2 (en) 2007-12-18 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5527966B2 (ja) 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ
US8247315B2 (en) 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device
US8227278B2 (en) 2008-09-05 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Methods for manufacturing thin film transistor and display device
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
KR20100067612A (ko) 2008-12-11 2010-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 표시 장치
WO2010067698A1 (en) 2008-12-11 2010-06-17 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device
JP5752446B2 (ja) * 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
TWI512981B (zh) 2010-04-27 2015-12-11 Semiconductor Energy Lab 微晶半導體膜的製造方法及半導體裝置的製造方法
WO2013001579A1 (ja) 2011-06-30 2013-01-03 パナソニック株式会社 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法

Also Published As

Publication number Publication date
JPS6098680A (ja) 1985-06-01

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