JPH05338B2 - - Google Patents

Info

Publication number
JPH05338B2
JPH05338B2 JP59256363A JP25636384A JPH05338B2 JP H05338 B2 JPH05338 B2 JP H05338B2 JP 59256363 A JP59256363 A JP 59256363A JP 25636384 A JP25636384 A JP 25636384A JP H05338 B2 JPH05338 B2 JP H05338B2
Authority
JP
Japan
Prior art keywords
silica
silanol group
group density
slurry
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59256363A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61136909A (ja
Inventor
Katsuhisa Kamyama
Tsuneo Kimura
Teruo Kidera
Yukio Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Industries Ltd filed Critical Mitsubishi Chemical Industries Ltd
Priority to JP59256363A priority Critical patent/JPS61136909A/ja
Priority to US06/802,013 priority patent/US4664679A/en
Priority to GB08529290A priority patent/GB2168993B/en
Priority to DE19853542738 priority patent/DE3542738A1/de
Priority to KR1019850009113A priority patent/KR930006470B1/ko
Priority to FR858517963A priority patent/FR2574064B1/fr
Publication of JPS61136909A publication Critical patent/JPS61136909A/ja
Publication of JPH05338B2 publication Critical patent/JPH05338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141—Preparation of hydrosols or aqueous dispersions
    • C01B33/1415—Preparation of hydrosols or aqueous dispersions by suspending finely divided silica in water
    • C01B33/1417—Preparation of hydrosols or aqueous dispersions by suspending finely divided silica in water an aqueous dispersion being obtained
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/145—Preparation of hydroorganosols, organosols or dispersions in an organic medium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/007—Other surface treatment of glass not in the form of fibres or filaments by thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
    • C03C25/10—Coating
    • C03C25/465—Coatings containing composite materials
    • C03C25/47—Coatings containing composite materials containing particles, fibres or flakes, e.g. in a continuous phase
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H10P52/402—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Pigments, Carbon Blacks, Or Wood Stains (AREA)
JP59256363A 1984-12-04 1984-12-04 無水ケイ酸の水分散液組成物 Granted JPS61136909A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59256363A JPS61136909A (ja) 1984-12-04 1984-12-04 無水ケイ酸の水分散液組成物
US06/802,013 US4664679A (en) 1984-12-04 1985-11-25 Aqueous dispersion of silicic anhydride and abrasive composition comprising the dispersion
GB08529290A GB2168993B (en) 1984-12-04 1985-11-28 Aqueous dispersion of silicic anhydride and abrasive composition comprising the dispersion
DE19853542738 DE3542738A1 (de) 1984-12-04 1985-12-03 Waessrige dispersion von kieselsaeureanhydrid und schleifmittel mit einem gehalt der dispersion
KR1019850009113A KR930006470B1 (ko) 1984-12-04 1985-12-04 규산 무수물의 수 분산물 제조방법
FR858517963A FR2574064B1 (fr) 1984-12-04 1985-12-04 Dispersion aqueuse d'anhydride silicique et composition abrasive comprenant cette dispersion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59256363A JPS61136909A (ja) 1984-12-04 1984-12-04 無水ケイ酸の水分散液組成物

Publications (2)

Publication Number Publication Date
JPS61136909A JPS61136909A (ja) 1986-06-24
JPH05338B2 true JPH05338B2 (show.php) 1993-01-05

Family

ID=17291637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59256363A Granted JPS61136909A (ja) 1984-12-04 1984-12-04 無水ケイ酸の水分散液組成物

Country Status (6)

Country Link
US (1) US4664679A (show.php)
JP (1) JPS61136909A (show.php)
KR (1) KR930006470B1 (show.php)
DE (1) DE3542738A1 (show.php)
FR (1) FR2574064B1 (show.php)
GB (1) GB2168993B (show.php)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0773270A2 (en) 1995-11-10 1997-05-14 Tokuyama Corporation Polishing slurries and a process for the production thereof
WO2009104465A1 (ja) * 2008-02-18 2009-08-27 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
WO2009104517A1 (ja) * 2008-02-18 2009-08-27 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
JP2009224771A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2009224767A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010016346A (ja) * 2008-02-18 2010-01-21 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010016344A (ja) * 2008-02-18 2010-01-21 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028078A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028077A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028081A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028080A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028079A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028082A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010034498A (ja) * 2008-02-18 2010-02-12 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010034497A (ja) * 2008-02-18 2010-02-12 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010041029A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
JP2010041027A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5226930A (en) * 1988-06-03 1993-07-13 Monsanto Japan, Ltd. Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5228886A (en) * 1990-10-09 1993-07-20 Buehler, Ltd. Mechanochemical polishing abrasive
BE1007281A3 (nl) * 1993-07-12 1995-05-09 Philips Electronics Nv Werkwijze voor het polijsten van een oppervlak van koper of een in hoofdzaak koper bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze, röntgenstralingcollimerend element en röntgenstralingreflecterend element, beide voorzien van een volgens de werkwijze gepolijst oppervlak en polijstmiddel geschikt voor toepassing in de werkwijze.
BE1007280A3 (nl) * 1993-07-12 1995-05-09 Philips Electronics Nv Werkwijze voor het polijsten van een oppervlak van een edelmetaal of een in hoofdzaak edelmetaal bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze en polijstmiddel geschikt voor toepassing in de werkwijze.
FR2761629B1 (fr) * 1997-04-07 1999-06-18 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope
DE19755804A1 (de) * 1997-12-16 1999-06-24 Andreas Dr Oelschlaeger Modifizierte Wasserglasfaser
JPH11256141A (ja) * 1998-03-12 1999-09-21 Sony Corp 研磨スラリーおよび研磨方法
JP3296781B2 (ja) * 1998-04-21 2002-07-02 信越半導体株式会社 水性切削液、その製造方法、ならびにこの水性切削液を用いた切削方法
US6299659B1 (en) * 1998-08-05 2001-10-09 Showa Denko K.K. Polishing material composition and polishing method for polishing LSI devices
JP4112125B2 (ja) * 1999-08-13 2008-07-02 電気化学工業株式会社 微細球状シリカ粉末の製造方法
JP4237439B2 (ja) * 1999-12-17 2009-03-11 キャボット マイクロエレクトロニクス コーポレイション 基体の研磨又は平坦化方法
TW572979B (en) * 2000-02-02 2004-01-21 Rodel Inc Polishing composition
JP4053297B2 (ja) * 2001-04-11 2008-02-27 三菱マテリアル株式会社 研削材及びそれを用いた穿孔工法
US6656241B1 (en) * 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
DE10145162A1 (de) * 2001-09-13 2003-04-10 Wacker Chemie Gmbh Kieselsäure mit geringem Gehalt an Kieselsäure-Silanolgruppen
US6652612B2 (en) * 2001-11-15 2003-11-25 Catalysts & Chemicals Industries Co., Ltd. Silica particles for polishing and a polishing agent
DE10231757A1 (de) * 2002-07-13 2004-01-22 Creavis Gesellschaft Für Technologie Und Innovation Mbh Verfahren zur Herstellung einer tensidfreien Suspension auf wässriger basis von nanostrukturierten, hydrophoben Partikeln und deren Verwendung
US20040209066A1 (en) * 2003-04-17 2004-10-21 Swisher Robert G. Polishing pad with window for planarization
TWI363796B (en) 2004-06-14 2012-05-11 Kao Corp Polishing composition
JP4615952B2 (ja) * 2004-09-30 2011-01-19 株式会社トクヤマ 改質疎水化シリカ及びその製造方法
US20060089095A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089094A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
TWI323741B (en) * 2004-12-16 2010-04-21 K C Tech Co Ltd Abrasive particles, polishing slurry, and producing method thereof
KR100641348B1 (ko) * 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
KR101484795B1 (ko) * 2007-03-27 2015-01-20 후소카가쿠코교 가부시키가이샤 콜로이달 실리카 및 그의 제조 방법
JP5937403B2 (ja) * 2012-04-02 2016-06-22 デンカ株式会社 スラリー組成物及びそれを用いた樹脂組成物
CN116888073A (zh) 2021-02-11 2023-10-13 赢创运营有限公司 具有降低的硅烷醇基团密度的气相二氧化硅粉末

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1163784C2 (de) * 1962-03-30 1973-05-03 Degussa Verfahren zur Oberflaechenbehandlung von hochdispersen Oxyden
DE1567454A1 (de) * 1966-03-10 1970-08-06 Degussa Verfahren zur Herstellung stabiler hochprozentiger Dispersionen von pyrogen gewonnener Kieselsaeure
SU600160A1 (ru) * 1974-05-05 1978-03-30 Калушский Химико-Металлургический Комбинат Полировальный состав
US3922393A (en) * 1974-07-02 1975-11-25 Du Pont Process for polishing silicon and germanium semiconductor materials
DE7621572U1 (de) * 1976-07-08 1976-10-28 Skf Kugellagerfabriken Gmbh, 8720 Schweinfurt Kupplungsausruecker, insbesondere fuer kraftfahrzeuge
US4260396A (en) * 1978-01-16 1981-04-07 W. R. Grace & Co. Compositions for polishing silicon and germanium
DE2844052A1 (de) * 1978-10-10 1980-04-30 Degussa Waessrige dispersion einer hydrophoben kieselsaeure
DE2909930C2 (de) * 1979-03-14 1984-05-10 Basf Ag, 6700 Ludwigshafen Neue kristalline SiO↓2↓-Modifikation und Verfahren zu ihrer Herstellung
JPS56155273A (en) * 1980-04-30 1981-12-01 Sekisui Chem Co Ltd Ground material for building
US4329396A (en) * 1980-05-27 1982-05-11 Minnesota Mining And Manufacturing Company Corrosion-resistant reflective or transparent-reflective sheet material
US4588421A (en) * 1984-10-15 1986-05-13 Nalco Chemical Company Aqueous silica compositions for polishing silicon wafers

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0773270A2 (en) 1995-11-10 1997-05-14 Tokuyama Corporation Polishing slurries and a process for the production thereof
WO2009104465A1 (ja) * 2008-02-18 2009-08-27 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
WO2009104517A1 (ja) * 2008-02-18 2009-08-27 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
JP2009224771A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2009224767A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010016346A (ja) * 2008-02-18 2010-01-21 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010016344A (ja) * 2008-02-18 2010-01-21 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028078A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028077A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028081A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028080A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028079A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028082A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010034498A (ja) * 2008-02-18 2010-02-12 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010034497A (ja) * 2008-02-18 2010-02-12 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010041029A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
JP2010041027A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法

Also Published As

Publication number Publication date
JPS61136909A (ja) 1986-06-24
KR930006470B1 (ko) 1993-07-16
FR2574064A1 (fr) 1986-06-06
GB2168993A (en) 1986-07-02
GB2168993B (en) 1988-09-07
DE3542738A1 (de) 1986-06-05
KR860004981A (ko) 1986-07-16
GB8529290D0 (en) 1986-01-02
FR2574064B1 (fr) 1989-06-16
US4664679A (en) 1987-05-12

Similar Documents

Publication Publication Date Title
JPH05338B2 (show.php)
US5226930A (en) Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same
US4842837A (en) Process for producing fine spherical silica
JP5080061B2 (ja) 中性コロイダルシリカの製造方法
JP4828032B2 (ja) 疎水性シリカ粉末およびその製造方法
JP4577755B2 (ja) 変性コロイダルシリカの製造方法
JP4032503B2 (ja) 疎水性オルガノシリカゾルの製造方法
JP7213234B2 (ja) シリカ粒子分散液、研磨組成物及びシリカ粒子分散液の製造方法
JP2013032276A (ja) 異形シリカゾル
EP0371147B1 (en) Abrasive composition for silicon wafer
JPH06199515A (ja) 酸性シリカゾルの製造方法
US6638982B2 (en) Method of preparing a fumed metal oxide dispersion
JPWO1989012082A1 (ja) シリコーンウェハー用研磨組成物
JP2926915B2 (ja) 細長い形状のシリカゾル及びその製法
JP4458396B2 (ja) 高純度親水性有機溶媒分散シリカゾルの製造方法及びその方法で得られる高純度親水性有機溶媒分散シリカゾル並びに高純度有機溶媒分散シリカゾルの製造方法及びその方法で得られる高純度有機溶媒分散シリカゾル
JP7782174B2 (ja) シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP3965497B2 (ja) 低増粘性フュームドシリカおよびそのスラリー
CN118439623A (zh) 二氧化硅粒子及其制造方法、硅烷醇基的测定方法、研磨组合物、研磨方法、半导体晶片的制造方法和半导体器件的制造方法
JP5267758B2 (ja) 疎水性シリカ粉末の製造法
KR101121576B1 (ko) 화학적, 기계적 연마용 콜로이달 실리카졸의 제조방법
US2945817A (en) Silica-silicone aerogels and their preparation
JP7782173B2 (ja) シリカゾルの製造方法、研磨方法、半導体ウェハの製造方法及び半導体デバイスの製造方法
JP5505900B2 (ja) 高濃度シリカゾル
JP3950691B2 (ja) セリウムｉｉｉを含有するセリウム化合物のコロイド分散液、その製造法及びその使用
JP3225549B2 (ja) 高純度の水性シリカゾルの製造法