JPH05326429A - レーザー処理方法およびレーザー処理装置 - Google Patents

レーザー処理方法およびレーザー処理装置

Info

Publication number
JPH05326429A
JPH05326429A JP4108489A JP10848992A JPH05326429A JP H05326429 A JPH05326429 A JP H05326429A JP 4108489 A JP4108489 A JP 4108489A JP 10848992 A JP10848992 A JP 10848992A JP H05326429 A JPH05326429 A JP H05326429A
Authority
JP
Japan
Prior art keywords
laser
semiconductor
doping
chamber
reactive gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4108489A
Other languages
English (en)
Japanese (ja)
Inventor
Kouyuu Chiyou
宏勇 張
Shunpei Yamazaki
舜平 山崎
Yasuhiko Takemura
保彦 竹村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP4108489A priority Critical patent/JPH05326429A/ja
Priority to TW081104891A priority patent/TW221081B/zh
Priority to KR1019920018168A priority patent/KR960008499B1/ko
Priority to US07/971,237 priority patent/US5424244A/en
Publication of JPH05326429A publication Critical patent/JPH05326429A/ja
Priority to US08/411,973 priority patent/US5849043A/en
Priority to US09/145,543 priority patent/US6358784B1/en
Priority to US09/356,376 priority patent/US6655767B2/en
Priority to US10/724,126 priority patent/US7169657B2/en
Priority to US11/699,023 priority patent/US7781271B2/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
    • B60R25/00—Fittings or systems for preventing or indicating unauthorised use or theft of vehicles
    • B60R25/01—Fittings or systems for preventing or indicating unauthorised use or theft of vehicles operating on vehicle systems or fittings, e.g. on doors, seats or windscreens
    • B60R25/04—Fittings or systems for preventing or indicating unauthorised use or theft of vehicles operating on vehicle systems or fittings, e.g. on doors, seats or windscreens operating on the propulsion system, e.g. engine or drive motor
    • B60R25/06—Fittings or systems for preventing or indicating unauthorised use or theft of vehicles operating on vehicle systems or fittings, e.g. on doors, seats or windscreens operating on the propulsion system, e.g. engine or drive motor operating on the vehicle transmission
    • B60R25/066—Locking of hand actuated control actuating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP4108489A 1992-03-26 1992-04-01 レーザー処理方法およびレーザー処理装置 Pending JPH05326429A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP4108489A JPH05326429A (ja) 1992-03-26 1992-04-01 レーザー処理方法およびレーザー処理装置
TW081104891A TW221081B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-03-26 1992-06-22
KR1019920018168A KR960008499B1 (ko) 1992-03-26 1992-10-05 레이저 처리방법 및 레이저 처리장치
US07/971,237 US5424244A (en) 1992-03-26 1992-11-04 Process for laser processing and apparatus for use in the same
US08/411,973 US5849043A (en) 1992-03-26 1995-03-28 Apparatus for laser ion doping
US09/145,543 US6358784B1 (en) 1992-03-26 1998-09-02 Process for laser processing and apparatus for use in the same
US09/356,376 US6655767B2 (en) 1992-03-26 1999-07-19 Active matrix display device
US10/724,126 US7169657B2 (en) 1992-03-26 2003-12-01 Process for laser processing and apparatus for use in the same
US11/699,023 US7781271B2 (en) 1992-03-26 2007-01-29 Process for laser processing and apparatus for use in the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4-100479 1992-03-26
JP10047992 1992-03-26
JP4108489A JPH05326429A (ja) 1992-03-26 1992-04-01 レーザー処理方法およびレーザー処理装置

Publications (1)

Publication Number Publication Date
JPH05326429A true JPH05326429A (ja) 1993-12-10

Family

ID=14275060

Family Applications (2)

Application Number Title Priority Date Filing Date
JP4108489A Pending JPH05326429A (ja) 1992-03-26 1992-04-01 レーザー処理方法およびレーザー処理装置
JP23776392A Expired - Fee Related JP3375988B2 (ja) 1992-03-26 1992-08-12 レーザー処理装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP23776392A Expired - Fee Related JP3375988B2 (ja) 1992-03-26 1992-08-12 レーザー処理装置

Country Status (3)

Country Link
JP (2) JPH05326429A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR960008499B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW221081B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020085577A (ko) * 2001-05-09 2002-11-16 아남반도체 주식회사 게이트전극 제조방법
US7227229B2 (en) 1994-02-08 2007-06-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device comprising an inverter circuit

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424244A (en) 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
KR100291971B1 (ko) 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
US6562705B1 (en) 1999-10-26 2003-05-13 Kabushiki Kaisha Toshiba Method and apparatus for manufacturing semiconductor element
JP4387091B2 (ja) 2002-11-05 2009-12-16 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP4737366B2 (ja) * 2004-02-25 2011-07-27 セイコーエプソン株式会社 半導体装置の製造方法
JP2008243975A (ja) * 2007-03-26 2008-10-09 Japan Steel Works Ltd:The アモルファス薄膜の結晶化方法および結晶化装置
CN114465086B (zh) * 2022-01-19 2024-03-15 河南仕佳光子科技股份有限公司 一种dfb激光器光学膜的制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50117374A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-02-28 1975-09-13
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device
JPS5630721A (en) * 1979-08-21 1981-03-27 Nec Corp Diffusing device of selected impurity
JPS57162339A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Manufacture of semiconductor device
JPS62130562A (ja) * 1985-11-30 1987-06-12 Nippon Gakki Seizo Kk 電界効果トランジスタの製法
JP2611236B2 (ja) * 1987-07-03 1997-05-21 ソニー株式会社 半導体製造装置
JPH01101625A (ja) * 1987-10-15 1989-04-19 Komatsu Ltd 半導体装置の製造方法
JP2628064B2 (ja) * 1988-04-11 1997-07-09 東京エレクトロン株式会社 被処理体の処理装置
JPH02222545A (ja) * 1989-02-23 1990-09-05 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法
JP2764425B2 (ja) * 1989-02-27 1998-06-11 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP2805321B2 (ja) * 1989-02-28 1998-09-30 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7227229B2 (en) 1994-02-08 2007-06-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device comprising an inverter circuit
KR20020085577A (ko) * 2001-05-09 2002-11-16 아남반도체 주식회사 게이트전극 제조방법

Also Published As

Publication number Publication date
KR960008499B1 (ko) 1996-06-26
JPH05326430A (ja) 1993-12-10
JP3375988B2 (ja) 2003-02-10
KR930020566A (ko) 1993-10-20
TW221081B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-02-11

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