JPH0531829B2 - - Google Patents

Info

Publication number
JPH0531829B2
JPH0531829B2 JP60215397A JP21539785A JPH0531829B2 JP H0531829 B2 JPH0531829 B2 JP H0531829B2 JP 60215397 A JP60215397 A JP 60215397A JP 21539785 A JP21539785 A JP 21539785A JP H0531829 B2 JPH0531829 B2 JP H0531829B2
Authority
JP
Japan
Prior art keywords
region
sithy
gate
cathode
impurity density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60215397A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6276556A (ja
Inventor
Hiroshi Tadano
Yoshio Nakamura
Tomoyoshi Kushida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Central R&D Labs Inc
Original Assignee
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Central R&D Labs Inc filed Critical Toyota Central R&D Labs Inc
Priority to JP60215397A priority Critical patent/JPS6276556A/ja
Priority to US06/912,578 priority patent/US4752818A/en
Publication of JPS6276556A publication Critical patent/JPS6276556A/ja
Publication of JPH0531829B2 publication Critical patent/JPH0531829B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Thyristors (AREA)
JP60215397A 1985-09-28 1985-09-28 高速静電誘導サイリスタ Granted JPS6276556A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60215397A JPS6276556A (ja) 1985-09-28 1985-09-28 高速静電誘導サイリスタ
US06/912,578 US4752818A (en) 1985-09-28 1986-09-26 Semiconductor device with multiple recombination center layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60215397A JPS6276556A (ja) 1985-09-28 1985-09-28 高速静電誘導サイリスタ

Publications (2)

Publication Number Publication Date
JPS6276556A JPS6276556A (ja) 1987-04-08
JPH0531829B2 true JPH0531829B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-05-13

Family

ID=16671642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60215397A Granted JPS6276556A (ja) 1985-09-28 1985-09-28 高速静電誘導サイリスタ

Country Status (1)

Country Link
JP (1) JPS6276556A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722198B2 (ja) * 1987-07-15 1995-03-08 富士電機株式会社 絶縁ゲ−ト形バイポ−ラトランジスタ
JPH0671078B2 (ja) * 1988-04-23 1994-09-07 松下電工株式会社 半導体装置
GB2213988B (en) * 1987-12-18 1992-02-05 Matsushita Electric Works Ltd Semiconductor device
JP2617497B2 (ja) * 1987-12-18 1997-06-04 松下電工株式会社 半導体装置
JP2526653B2 (ja) * 1989-01-25 1996-08-21 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4056408A (en) * 1976-03-17 1977-11-01 Westinghouse Electric Corporation Reducing the switching time of semiconductor devices by nuclear irradiation
JPS6046551B2 (ja) * 1978-08-07 1985-10-16 株式会社日立製作所 半導体スイツチング素子およびその製法
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
EP0130457A1 (de) * 1983-07-01 1985-01-09 Hahn-Meitner-Institut Berlin Gesellschaft mit beschränkter Haftung Halbleiter-Bauelement mit mindestens einem pn-Übergang und mit in der Tiefe der Basisschicht scharf lokalisierten Ionen, Verfahren zu dessen Herstellung und seine Verwendung

Also Published As

Publication number Publication date
JPS6276556A (ja) 1987-04-08

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