JPS6276556A - 高速静電誘導サイリスタ - Google Patents

高速静電誘導サイリスタ

Info

Publication number
JPS6276556A
JPS6276556A JP60215397A JP21539785A JPS6276556A JP S6276556 A JPS6276556 A JP S6276556A JP 60215397 A JP60215397 A JP 60215397A JP 21539785 A JP21539785 A JP 21539785A JP S6276556 A JPS6276556 A JP S6276556A
Authority
JP
Japan
Prior art keywords
region
gate
5ithy
anode
impurity density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60215397A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0531829B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hiroshi Tadano
博 只野
Yoshio Nakamura
中村　佳夫
Tomoyoshi Kushida
知義 櫛田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Central R&D Labs Inc
Original Assignee
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Central R&D Labs Inc filed Critical Toyota Central R&D Labs Inc
Priority to JP60215397A priority Critical patent/JPS6276556A/ja
Priority to US06/912,578 priority patent/US4752818A/en
Publication of JPS6276556A publication Critical patent/JPS6276556A/ja
Publication of JPH0531829B2 publication Critical patent/JPH0531829B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 

Landscapes

  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP60215397A 1985-09-28 1985-09-28 高速静電誘導サイリスタ Granted JPS6276556A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60215397A JPS6276556A (ja) 1985-09-28 1985-09-28 高速静電誘導サイリスタ
US06/912,578 US4752818A (en) 1985-09-28 1986-09-26 Semiconductor device with multiple recombination center layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60215397A JPS6276556A (ja) 1985-09-28 1985-09-28 高速静電誘導サイリスタ

Publications (2)

Publication Number Publication Date
JPS6276556A true JPS6276556A (ja) 1987-04-08
JPH0531829B2 JPH0531829B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-05-13

Family

ID=16671642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60215397A Granted JPS6276556A (ja) 1985-09-28 1985-09-28 高速静電誘導サイリスタ

Country Status (1)

Country Link
JP (1) JPS6276556A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6419771A (en) * 1987-07-15 1989-01-23 Fuji Electric Co Ltd Insulated-gate bipolar transistor
JPH01162368A (ja) * 1987-12-18 1989-06-26 Matsushita Electric Works Ltd 半導体装置
JPH01272157A (ja) * 1988-04-23 1989-10-31 Matsushita Electric Works Ltd 半導体装置
US5025293A (en) * 1989-01-25 1991-06-18 Fuji Electric Co., Ltd. Conductivity modulation type MOSFET
US5075751A (en) * 1987-12-18 1991-12-24 Matsushita Electric Works, Ltd. Semiconductor device
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113686A (en) * 1976-03-17 1977-09-22 Westinghouse Electric Corp Method of producing semiconductor device
JPS5522840A (en) * 1978-08-07 1980-02-18 Hitachi Ltd Semiconductor switching element and manufacturing method thereof
JPS5739577A (en) * 1980-06-27 1982-03-04 Westinghouse Electric Corp Method of reducing reverse recovery charge for thyristor
JPS6074443A (ja) * 1983-07-01 1985-04-26 ブラウン・ボバリ・ウント・シ−・アクチエンゲゼルシヤフト ｐｎ接合半導体素子及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113686A (en) * 1976-03-17 1977-09-22 Westinghouse Electric Corp Method of producing semiconductor device
JPS5522840A (en) * 1978-08-07 1980-02-18 Hitachi Ltd Semiconductor switching element and manufacturing method thereof
JPS5739577A (en) * 1980-06-27 1982-03-04 Westinghouse Electric Corp Method of reducing reverse recovery charge for thyristor
JPS6074443A (ja) * 1983-07-01 1985-04-26 ブラウン・ボバリ・ウント・シ−・アクチエンゲゼルシヤフト ｐｎ接合半導体素子及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6419771A (en) * 1987-07-15 1989-01-23 Fuji Electric Co Ltd Insulated-gate bipolar transistor
JPH01162368A (ja) * 1987-12-18 1989-06-26 Matsushita Electric Works Ltd 半導体装置
US5075751A (en) * 1987-12-18 1991-12-24 Matsushita Electric Works, Ltd. Semiconductor device
JPH01272157A (ja) * 1988-04-23 1989-10-31 Matsushita Electric Works Ltd 半導体装置
US5025293A (en) * 1989-01-25 1991-06-18 Fuji Electric Co., Ltd. Conductivity modulation type MOSFET
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
US5292672A (en) * 1989-09-20 1994-03-08 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing an insulated gate bipolar transistor

Also Published As

Publication number Publication date
JPH0531829B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-05-13

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