JPH0531819B2 - - Google Patents
Info
- Publication number
- JPH0531819B2 JPH0531819B2 JP30700386A JP30700386A JPH0531819B2 JP H0531819 B2 JPH0531819 B2 JP H0531819B2 JP 30700386 A JP30700386 A JP 30700386A JP 30700386 A JP30700386 A JP 30700386A JP H0531819 B2 JPH0531819 B2 JP H0531819B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- silicon
- silicon substrate
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 41
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 41
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 37
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 32
- 229920002120 photoresistant polymer Polymers 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000002955 isolation Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30700386A JPS63157444A (ja) | 1986-12-22 | 1986-12-22 | 選択酸化膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30700386A JPS63157444A (ja) | 1986-12-22 | 1986-12-22 | 選択酸化膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63157444A JPS63157444A (ja) | 1988-06-30 |
| JPH0531819B2 true JPH0531819B2 (enrdf_load_stackoverflow) | 1993-05-13 |
Family
ID=17963844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30700386A Granted JPS63157444A (ja) | 1986-12-22 | 1986-12-22 | 選択酸化膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63157444A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0348441A (ja) * | 1989-07-17 | 1991-03-01 | Nippon Telegr & Teleph Corp <Ntt> | 半導体集積回路装置の製造方法 |
| US5929521A (en) | 1997-03-26 | 1999-07-27 | Micron Technology, Inc. | Projected contact structure for bumped semiconductor device and resulting articles and assemblies |
| JP2939472B1 (ja) * | 1998-08-21 | 1999-08-25 | 株式会社板屋製作所 | スプリング製造装置 |
| JP3026793B2 (ja) * | 1998-08-21 | 2000-03-27 | 株式会社板屋製作所 | スプリング製造装置及びツール選択装置 |
| US6682978B1 (en) * | 1999-08-30 | 2004-01-27 | Advanced Micro Devices, Inc. | Integrated circuit having increased gate coupling capacitance |
-
1986
- 1986-12-22 JP JP30700386A patent/JPS63157444A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63157444A (ja) | 1988-06-30 |
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