JPH0530303B2 - - Google Patents

Info

Publication number
JPH0530303B2
JPH0530303B2 JP60182262A JP18226285A JPH0530303B2 JP H0530303 B2 JPH0530303 B2 JP H0530303B2 JP 60182262 A JP60182262 A JP 60182262A JP 18226285 A JP18226285 A JP 18226285A JP H0530303 B2 JPH0530303 B2 JP H0530303B2
Authority
JP
Japan
Prior art keywords
film
metal silicide
silicide film
forming
mask pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60182262A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6271272A (ja
Inventor
Osamu Hideshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60182262A priority Critical patent/JPS6271272A/ja
Priority to DE8686302631T priority patent/DE3683183D1/de
Priority to EP86302631A priority patent/EP0199497B1/en
Priority to KR1019860002680A priority patent/KR890004973B1/ko
Priority to US06/850,054 priority patent/US4698127A/en
Publication of JPS6271272A publication Critical patent/JPS6271272A/ja
Publication of JPH0530303B2 publication Critical patent/JPH0530303B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP60182262A 1985-04-10 1985-08-20 半導体装置の製造方法 Granted JPS6271272A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP60182262A JPS6271272A (ja) 1985-08-20 1985-08-20 半導体装置の製造方法
DE8686302631T DE3683183D1 (de) 1985-04-10 1986-04-09 Verfahren zum herstellen eines selbtsausrichtenden bipolartransistors.
EP86302631A EP0199497B1 (en) 1985-04-10 1986-04-09 Process for fabricating a self-aligned bipolar transistor
KR1019860002680A KR890004973B1 (ko) 1985-04-10 1986-04-09 자기정합된 바이폴라트랜지스터의 제조방법
US06/850,054 US4698127A (en) 1985-04-10 1986-04-10 Process for fabricating a self-aligned bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60182262A JPS6271272A (ja) 1985-08-20 1985-08-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6271272A JPS6271272A (ja) 1987-04-01
JPH0530303B2 true JPH0530303B2 (enrdf_load_stackoverflow) 1993-05-07

Family

ID=16115175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60182262A Granted JPS6271272A (ja) 1985-04-10 1985-08-20 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6271272A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111345A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 半導体装置
US4495512A (en) * 1982-06-07 1985-01-22 International Business Machines Corporation Self-aligned bipolar transistor with inverted polycide base contact

Also Published As

Publication number Publication date
JPS6271272A (ja) 1987-04-01

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