JPH05291590A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPH05291590A
JPH05291590A JP4095703A JP9570392A JPH05291590A JP H05291590 A JPH05291590 A JP H05291590A JP 4095703 A JP4095703 A JP 4095703A JP 9570392 A JP9570392 A JP 9570392A JP H05291590 A JPH05291590 A JP H05291590A
Authority
JP
Japan
Prior art keywords
chip
gel
pressure sensor
package
semiconductor pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4095703A
Other languages
Japanese (ja)
Other versions
JP3092307B2 (en
Inventor
Kazuyuki Kato
和之 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP04095703A priority Critical patent/JP3092307B2/en
Priority to DE69302521T priority patent/DE69302521T2/en
Priority to EP93103125A priority patent/EP0568781B1/en
Priority to US08/024,454 priority patent/US5266827A/en
Publication of JPH05291590A publication Critical patent/JPH05291590A/en
Application granted granted Critical
Publication of JP3092307B2 publication Critical patent/JP3092307B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061Electrical connection means
    • G01L19/0084Electrical connection means to the outside of the housing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14Housings
    • G01L19/147Details about the mounting of the sensor to support or covering means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements

Abstract

PURPOSE:To obtain a surface pressurized semiconductor pressure sensor in which excess silicon gel is sucked by using a jig by forming a recess to become a sucking region of an excess protective material on a residual surface of a bottom in a package. CONSTITUTION:A sufficient amount of silicon gel 7 is potted up to a level in which a chip 1, an external lead terminal 3 and wires 4 are submerged in a package, a vacuum evacuation type suction nozzle 9 is inserted obliquely sidewise into the package 5 in contact with a recess 8, and the gel 7 is sucked out. Thus, the excess gel 7 in which the chip 1, the terminal 3 and the wires 4 are buried is fluidized toward the recess 8, and sucked to the nozzle 9. When a thickness of the layer of the gel 7 covering the surfaces of the chip 1, the wires 4 is sufficiently reduced to about several tens mum, the sucking is stopped. Accordingly, an accuracy of a surface pressurized type semiconductor pressure sensor can be significantly improved by reducing the thickness of the layer of the gel covering the surface of the chip to about several tens mum.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、デュアル・インライン
・パッケージ(DILパッケージ)に搭載した表面加圧
形の半導体圧力センサ、特にそのパッケージ構造に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface pressure type semiconductor pressure sensor mounted in a dual in-line package (DIL package), and more particularly to a package structure thereof.

【0002】[0002]

【従来の技術】半導体圧力センサとして、シリコン基板
の一部に形成した薄肉ダイアフラムの上に、歪ゲージ抵
抗と呼ばれる半導体ピエゾ抵抗を拡散形成してなる半導
体圧力センサチップを採用し、測定圧力をダイアフラム
上の抵抗変化として電気信号に変換して検出するように
したものが周知である。
2. Description of the Related Art As a semiconductor pressure sensor, a semiconductor pressure sensor chip, which is formed by diffusing a semiconductor piezoresistor called a strain gauge resistor on a thin diaphragm formed on a part of a silicon substrate, is used to measure the pressure. It is well known that the above resistance change is converted into an electric signal and detected.

【0003】図5,図6は従来における表面加圧形の半
導体圧力センサの組立構造(DILパッケージ)を示す
ものであり、図において、1は半導体圧力センサチッ
プ、2はチップ1を搭載したガラス台座、3は外部導出
端子、4はチップ1のボンディングパッド1aと外部導
出端子3との間をボンディングしたアルミワイヤ、5は
樹脂パッケージ、6はパッケージ蓋、6aは蓋6に穿孔
した導圧穴、7はチップ1の表面を保護するシリコーン
ゲルである。
FIGS. 5 and 6 show an assembly structure (DIL package) of a conventional surface pressure type semiconductor pressure sensor, in which 1 is a semiconductor pressure sensor chip and 2 is a glass on which the chip 1 is mounted. A pedestal 3, an external lead-out terminal, 4 an aluminum wire bonded between the bonding pad 1a of the chip 1 and the external lead-out terminal 3, 5 a resin package, 6 a package lid, 6a a pressure guide hole formed in the lid 6, A silicone gel 7 protects the surface of the chip 1.

【0004】ここで、チップ1はダイアフラムを形成し
た基板の凹空間を下面に向けてガラス台座2の上面に真
空中で気密に接合されている。一方、パッケージ5の底
部中央には一段低く窪んだキャビティ5aが形成されて
おり、チップ1を搭載した台座2がキャビティ5aの底
に接着剤で固定されている。また、外部導出端子3は前
記キャビティ5aを挟んでパッケージ5の左右両サイド
に配列している。なお、前記組立構造におけるパッケー
ジ5のキャビティ5aは、台座2の上に搭載したチップ
1と外部導出端子3とがパッケージ内でほぼ同じ高さに
並ぶようにするために形成したものである。また、シリ
コーンゲル7は導圧穴6aを通じてパッケージ内に侵入
する塵埃,湿気などからチップ1およびワイヤ4などを
保護する役目を果たす。
Here, the chip 1 is hermetically bonded in vacuum to the upper surface of the glass pedestal 2 with the concave space of the substrate having the diaphragm facing the lower surface. On the other hand, in the center of the bottom of the package 5, a cavity 5a is formed which is recessed one step lower, and the pedestal 2 on which the chip 1 is mounted is fixed to the bottom of the cavity 5a with an adhesive. The external lead-out terminals 3 are arranged on both the left and right sides of the package 5 with the cavity 5a sandwiched therebetween. The cavity 5a of the package 5 in the assembly structure is formed so that the chip 1 mounted on the pedestal 2 and the external lead-out terminal 3 are arranged at substantially the same height in the package. Further, the silicone gel 7 plays a role of protecting the chip 1 and the wires 4 and the like from dust and moisture that enter the package through the pressure guiding hole 6a.

【0005】かかる構成の半導体圧力センサは次のよう
に組立てられる。まず、パッケージ5のキャビティ5a
にチップ1と台座2との組立体を組み込み、続いてチッ
プ1のボンディングパッド1aと外部導出端子3との間
にワイヤ4をボンディングする。次に、パッケージ5の
中に適量のシリコーンゲル7をポッティングしてチップ
1,ワイヤ4の表面を被覆し、さらにシリコーンゲル7
をキュア処理した後、最後にパッケージ5に蓋6を被着
して製品を完成する。
The semiconductor pressure sensor having the above structure is assembled as follows. First, the cavity 5a of the package 5
Then, the assembly of the chip 1 and the pedestal 2 is built in, and then the wire 4 is bonded between the bonding pad 1 a of the chip 1 and the external lead-out terminal 3. Next, an appropriate amount of silicone gel 7 is potted into the package 5 to cover the surfaces of the chips 1 and wires 4, and the silicone gel 7
Then, the package 5 is finally covered with the lid 6 to complete the product.

【0006】[0006]

【発明が解決しようとする課題】ところで、前記のよう
な表面加圧形の半導体圧力センサに対し、チップ表面の
保護対策としてパッケージ内にシリコーンゲルを注入す
る場合には、センサの精度維持面から次記のような配慮
が必要である。すなわち、シリコーンゲルはキュアした
状態でもゲル性状を保っているので、図5の導圧穴6a
を通じて外部から加わる圧力はチップ1のダイアフラム
を加圧するまでの途中でシリコーンゲル7を伝播する間
に多少減衰する。また、シリコーンゲルは熱サイクルが
加わったり,吸湿したりすると、その力学的性質が変化
してその影響がセンサの測定精度をばらつかせる。しか
も、このような測定精度への影響はゲル層の厚みが厚い
ほど大きく現れる。したがって、圧力センサの精度を高
めるためには、チップ1の表面を封止したシリコーンゲ
ル7の層厚をできる限り薄くすることが必要である。
By the way, in the surface pressure type semiconductor pressure sensor as described above, when silicone gel is injected into the package as a measure for protecting the chip surface, from the viewpoint of maintaining the accuracy of the sensor. The following considerations are necessary. That is, since the silicone gel maintains the gel property even in the cured state, the pressure guiding hole 6a in FIG.
The pressure applied from the outside through the silicone gel 7 is somewhat attenuated while propagating through the silicone gel 7 on the way to pressurizing the diaphragm of the chip 1. In addition, when the silicone gel is subjected to a thermal cycle or when it absorbs moisture, its mechanical properties change, and its influence causes variations in the measurement accuracy of the sensor. Moreover, such an influence on the measurement accuracy becomes more significant as the thickness of the gel layer increases. Therefore, in order to improve the accuracy of the pressure sensor, it is necessary to make the layer thickness of the silicone gel 7 sealing the surface of the chip 1 as thin as possible.

【0007】そこで、発明者等は、チップの封止工程で
最初にワイヤ4が没するレベルまでシリコーンゲル7を
パッケージ5にポッティングした後、真空引き式吸引ノ
ズルを用いて余分なゲルをパッケージ内から吸い取り、
最終的にチップの表面を覆うゲルの層厚が数十μm程度
にまで薄くする方法を試みた。なお、ゲルを吸い取ると
ワイヤがゲル層の上に露呈するが、ゲル自身には付着性
があるのでワイヤの表面がゲルで覆われる。しかしなが
ら、従来のパッケージ構造のままでは図6で示すように
チップ1の周域には外部導出端子3との間にワイヤ4が
配線されており、かつチップ自身も約3mm角程度の極小
サイズであることから吸引ノズルのハンドリングが困難
を極める。すなわち、吸引ノズルの先端をワイヤ5に触
れずにチップ1の周域に差し込ませることは至難の技で
ある。このために、吸引ノズルの先端が誤ってチップ1
の表面に当たって傷を付けたり、ワイヤ4を変形,断線
させたりするトラブルが多発し、このままでは実工程へ
の実用化が極めて困難となる。
Therefore, the inventors of the present invention potted the silicone gel 7 onto the package 5 to the level at which the wire 4 was first immersed in the chip sealing step, and then used the vacuum suction nozzle to remove the excess gel inside the package. Suck from
Finally, an attempt was made to reduce the thickness of the gel layer covering the surface of the chip to about several tens of μm. When the gel is absorbed, the wire is exposed on the gel layer, but since the gel itself is adhesive, the surface of the wire is covered with the gel. However, with the conventional package structure, as shown in FIG. 6, the wire 4 is laid between the external lead-out terminal 3 and the periphery of the chip 1, and the chip itself has a very small size of about 3 mm square. Because of this, handling the suction nozzle is extremely difficult. That is, it is extremely difficult to insert the tip of the suction nozzle into the peripheral area of the chip 1 without touching the wire 5. Because of this, the tip of the suction nozzle is erroneously
There are many troubles such as scratching the surface of the wire, deformation of the wire 4, and breaking of the wire 4, and it is extremely difficult to put the wire into practical use if it is left as it is.

【0008】本発明は上記の点にかんがみなされたもの
であり、その目的は前記した課題を解決し、チップの封
止工程でパッケージ内にポッティングしたシリコーンゲ
ルの余剰分を安全,かつ作業性よく吸引ノズルなどの治
具を用いて吸い取ることができるようにした表面加圧形
の半導体圧力センサ,特にそのパッケージ構造を提供す
ることにある。
The present invention has been made in view of the above points, and an object of the present invention is to solve the above-mentioned problems and to secure the surplus amount of silicone gel potted in a package in a chip sealing step with good safety and workability. It is an object of the present invention to provide a surface pressure type semiconductor pressure sensor which can be sucked by using a jig such as a suction nozzle, particularly a package structure thereof.

【0009】[0009]

【課題を解決するための手段】上記目的は本発明によ
り、キャビティに連ねてパッケージ内底部の残余面域に
余剰保護材の吸い取り作業領域となる凹所を形成するこ
とにより達成される。ここで、前記の凹所は、方形状を
なすパッケージの周囲四辺のうち、外部導出端子を配し
た二辺を除く対向二辺の少なくとも一辺の内周面域にキ
ャビティと連ねて形成することができる。また、チップ
のボンディングパッドは凹所との対向辺を除く残り辺の
チップ周縁に形成するのが好ましい。
According to the present invention, the above object can be achieved by forming a recess, which is connected to the cavity, in the remaining surface area of the inner bottom of the package and serves as a work area for sucking excess protective material. Here, the recess may be formed so as to be continuous with the cavity in an inner peripheral surface area of at least one of two opposite sides of the four sides of the rectangular package, excluding the two sides on which the external lead terminals are arranged. it can. Further, it is preferable that the bonding pad of the chip is formed on the peripheral edge of the chip other than the side facing the recess.

【0010】[0010]

【作用】上記構成により、まず、パッケージ内に保護材
であるシリコーンゲルをポッティングした直後の状態で
は、パッケージのキャビティと連ねてその側方に形成し
た凹所内もゲルで満たされている。ここで、真空式の吸
引ノズルを凹所に差し込んでゲルを吸い取ると、これに
引きずられる形でチップ,外部導出端子,ワイヤなどの
表面領域を覆っていたゲルが凹所側に流れ込んで一緒に
吸い取られるようになる。しかも、この凹所はチップ,
ワイヤなどが位置するキャビティから離れて形成されて
いるので、これら部品に吸引ノズルが触れるおそれなし
に、作業スペースに十分な余裕を持たせて余剰ゲルの吸
い取り作業を安全,かつ能率よく進めることができる。
With the above construction, first, immediately after potting the silicone gel as the protective material into the package, the recess formed in the side of the cavity linked to the cavity of the package is also filled with the gel. Here, when the vacuum suction nozzle is inserted into the recess to absorb the gel, the gel that covers the surface area of the chip, external lead-out terminal, wire, etc. flows in the form of being dragged by this and flows into the recess together. It will be sucked up. Moreover, this recess is a chip,
Since it is formed away from the cavity where the wires are located, there is no risk of the suction nozzle touching these parts, and there is a sufficient working space to allow the safe and efficient operation of sucking excess gel. it can.

【0011】[0011]

【実施例】以下本発明の実施例を図面に基づいて説明す
る。なお、実施例の図中で図5,図6に対応する同一部
材には同じ符号が付してある。まず、図1,図2におい
て、方形状(四角形)をなすパッケージ5に対して、そ
の底部中央にはチップ1,台座2を組み込むキャビティ
5aが形成されている。また、キャビティ5aを挟んで
パッケージ5の左右の二辺には外部導出端子3が配列
し、残る二辺の内周側面域にはキャビティ5aを挟んで
その両側にキャビティ5aと連なる凹所8が新たに追加
して形成されている。この凹所8はキャビティ5aと同
じ深さに窪んでおり、かつキャビティ5aとの境にはチ
ップ1の位置決めに必要なくびれ部が形成されている。
一方、チップ1の上面に形成したポッティングパッド1
aは、全て外部導出端子3と対向し合う左右二辺のチッ
プ周縁部に集中配列して外部導出端子3との間にワイヤ
ボンディングが施されており、凹所8と対向するチップ
辺にはボンディングパッドがない。
Embodiments of the present invention will be described below with reference to the drawings. In the drawings of the embodiments, the same members corresponding to FIGS. 5 and 6 are designated by the same reference numerals. First, in FIGS. 1 and 2, a cavity 5a for incorporating the chip 1 and the pedestal 2 is formed at the center of the bottom of the package 5 having a rectangular shape (quadrangle). Further, the external lead-out terminals 3 are arranged on the two left and right sides of the package 5 with the cavity 5a sandwiched therebetween, and the recesses 8 connected to the cavity 5a are sandwiched on both sides of the cavity 5a in the inner peripheral side surface regions of the remaining two sides. It is newly added and formed. The recess 8 is recessed to the same depth as the cavity 5a, and a constriction is formed at the boundary with the cavity 5a, which is necessary for positioning the chip 1.
On the other hand, the potting pad 1 formed on the upper surface of the chip 1
All of a are centrally arranged on the chip peripheral portions of the two left and right sides facing the external lead-out terminal 3 and wire-bonded between the external lead-out terminal 3 and the chip side facing the recess 8. There is no bonding pad.

【0012】かかる構成で、チップ1の表面をシリコー
ンゲル7で封止する場合には、まずチップ1,外部導出
端子3,およびワイヤ4が没するレベルまで十分な量の
シリコーンゲル7をパッケージ内にポッティングする。
次に、図1,図3で示すように真空引き式吸引ノズル9
を側方斜めからパッケージ5の内方に差し入れて前記凹
所8に当てがい、この状態でゲル7を吸い取る。これに
より、凹所8からのゲル吸い取りが進むに連れて、チッ
プ1,外部導出端子3,ワイヤ4をいままで埋めていた
余剰のゲルが凹所8に向けて流動して吸引ノズル9に吸
い取られるようになる。そして、最終的にチップ1,ワ
イヤ4の表面を被覆するゲル7の層厚が数十μm程度に
薄くなったところで吸い取りを停止する。
In the case of sealing the surface of the chip 1 with the silicone gel 7 in such a structure, first, a sufficient amount of the silicone gel 7 is packaged in the package to the level where the chip 1, the external lead-out terminal 3, and the wire 4 are submerged. Potting on.
Next, as shown in FIGS. 1 and 3, a vacuum suction type suction nozzle 9
Is obliquely inserted into the inside of the package 5 and applied to the recess 8, and the gel 7 is sucked in this state. As a result, as the gel is sucked from the recess 8, the excess gel filling the chip 1, the external lead-out terminal 3, and the wire 4 flows toward the recess 8 and is sucked by the suction nozzle 9. Will be Then, when the layer thickness of the gel 7 covering the surfaces of the chips 1 and the wires 4 is finally reduced to about several tens of μm, the sucking is stopped.

【0013】ところで、前記構成によれば、凹所8がキ
ャビティ5aと離れた位置に形成されており、しかもチ
ップ1のボンディングパッド1aは凹所8との対向辺に
は形成されてない。したがって、前記のように凹所8に
吸引ノズル9を差し入れて余剰ゲルを吸い取ることによ
り、チップ1,ワイヤ4などに吸引ノズル9のノズル先
端を触れるおそれなしに、作業スペースに十分な余裕を
もって余剰ゲルの吸い取り作業を安全,かつ能率よく進
めることができる。
By the way, according to the above construction, the recess 8 is formed at a position apart from the cavity 5a, and the bonding pad 1a of the chip 1 is not formed on the side facing the recess 8. Therefore, as described above, by inserting the suction nozzle 9 into the recess 8 and sucking the excess gel, there is no risk of touching the tip of the suction nozzle 9 with the tip 1, the wire 4, etc. The gel suction work can be safely and efficiently performed.

【0014】図4は本発明の応用実施例を示すものであ
り、この実施例では図1と比べて凹所8がキャビティ5
aの片側面域にのみ形成されている。この実施例では、
凹所8が一箇所であるために、図1のように同時に2本
の吸引ノズル9を使用してゲル吸い取り作業を進める場
合に比べて多少は作業能率が低くなるが、凹所8が一箇
所であるのでパッケージ5全体の外形寸法を小形化でき
る。なお、図4の構成では、チップ1のボンディングパ
ッド1aは必ずしも外部導出端子3と対向する左右二辺
に限定して配列する必要はなく、凹所8との対向辺を除
く残り三辺に分散して配列した場合でも同等な効果が得
られる。
FIG. 4 shows an application example of the present invention. In this embodiment, as compared with FIG.
It is formed only on one side surface area of a. In this example,
Since there is only one recess 8, the work efficiency is somewhat lower than in the case where the gel suction work is performed by using two suction nozzles 9 at the same time as shown in FIG. Since it is a place, the external dimensions of the entire package 5 can be reduced. In the configuration of FIG. 4, the bonding pads 1a of the chip 1 do not necessarily have to be arranged on the right and left sides facing the external lead-out terminals 3 and are distributed on the remaining three sides except the side facing the recess 8. Even if they are arranged in the same manner, the same effect can be obtained.

【0015】[0015]

【発明の効果】以上述べたように、本発明によれば、パ
ッケージ内に組み込んだチップの表面をシリコーンゲル
で封止する際の余剰ゲル吸い取り工程で、吸引ノズルを
パッケージ内部に形成した凹所に差し入れて吸い取り作
業を進めることにより、チップ,ワイヤなどに吸引ノズ
ルを触れずに作業を安全に遂行することができる。ま
た、余剰ゲルを吸い取って最終的にチップの表面を覆う
ゲルの層厚を数十μm程度に薄くすることで、ゲルが圧
力センサの測定精度に及ぼす影響を大幅に軽減して表面
加圧形半導体圧力センサの精度が大幅に向上する。
As described above, according to the present invention, the recess formed by the suction nozzle inside the package in the excess gel absorption step when the surface of the chip incorporated in the package is sealed with silicone gel. By advancing the suction work by inserting it into the device, it is possible to safely perform the work without touching the suction nozzle to the tip, the wire and the like. In addition, by absorbing the excess gel and finally reducing the layer thickness of the gel that covers the surface of the chip to about several tens of μm, the influence of the gel on the measurement accuracy of the pressure sensor is significantly reduced, and the surface pressure type The accuracy of the semiconductor pressure sensor is greatly improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明実施例のパッケージ蓋を外した状態の平
面図
FIG. 1 is a plan view of the embodiment of the present invention with a package lid removed.

【図2】図1の断面側視図FIG. 2 is a sectional side view of FIG.

【図3】図1の構成における余剰ゲル吸い取り作業の説
明図
FIG. 3 is an explanatory diagram of a surplus gel suction work in the configuration of FIG.

【図4】本発明の応用実施例の平面図FIG. 4 is a plan view of an application example of the present invention.

【図5】従来における半導体圧力センサの組立構造を示
す断面図
FIG. 5 is a sectional view showing an assembly structure of a conventional semiconductor pressure sensor.

【図6】図5におけるパッケージ蓋を外した状態の平面
6 is a plan view showing a state in which a package lid in FIG. 5 is removed.

【符号の説明】[Explanation of symbols]

1 半導体圧力センサチップ 1a ボンディングパッド 2 ガラス台座 3 外部導出端子 4 ワイヤ 5 パッケージ 5a キャビティ 6 パッケージ蓋 6a 導圧穴 7 シリコーンゲル 8 凹所 9 吸引ノズル 1 Semiconductor Pressure Sensor Chip 1a Bonding Pad 2 Glass Pedestal 3 External Lead-out Terminal 4 Wire 5 Package 5a Cavity 6 Package Lid 6a Pressure Guide Hole 7 Silicone Gel 8 Recess 9 Suction Nozzle

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】基板のダイアフラム上に歪ゲージ抵抗を形
成した半導体圧力センサチップを台座に搭載してパッケ
ージの底部中央に形成したキャビティ内に組み込み、か
つチップのボンディングパッドとキャビティの左右両サ
イドに配置した外部導出端子との間をワイヤ接続すると
ともに、チップおよびワイヤの表面をゲル状保護材で封
止した表面加圧形の半導体圧力センサにおいて、前記キ
ャビティに連ねてパッケージ内の残余面域に余剰保護材
の吸い取り作業領域となる凹所を形成したことを特徴と
する半導体圧力センサ。
1. A semiconductor pressure sensor chip having a strain gauge resistance formed on a diaphragm of a substrate is mounted on a pedestal and incorporated in a cavity formed at the center of the bottom of the package, and the bonding pad of the chip and both left and right sides of the cavity are mounted. In the surface pressure type semiconductor pressure sensor in which the surface of the chip and the wire is sealed with a gel-like protective material while connecting the wire to the external lead-out terminal that is arranged, in the remaining surface area in the package connected to the cavity. A semiconductor pressure sensor, characterized in that a recess serving as a work area for sucking excess protective material is formed.
【請求項2】請求項1記載の半導体圧力センサにおい
て、方形状をなすパッケージの周囲四辺のうち、外部導
出端子を配した二辺を除く対向二辺の少なくとも一辺の
内周面域に、キャビティと連ねて凹所を形成したことを
特徴とする半導体圧力センサ。
2. The semiconductor pressure sensor according to claim 1, wherein a cavity is formed in an inner peripheral surface area of at least one of two opposing sides of the four sides of the rectangular package, excluding the two sides on which external lead terminals are arranged. A semiconductor pressure sensor characterized in that a recess is formed so as to connect with the semiconductor pressure sensor.
【請求項3】請求項1記載の半導体圧力センサにおい
て、チップのボンディングパッドを凹所との対向辺を除
く残り辺のチップ周縁に形成したことを特徴とする半導
体圧力センサ。
3. The semiconductor pressure sensor according to claim 1, wherein the bonding pad of the chip is formed on the peripheral edge of the chip other than the side facing the recess.
【請求項4】請求項1記載の半導体圧力センサにおい
て、ゲル状保護材がシリコーンゲルであることを特徴と
する半導体圧力センサ。
4. The semiconductor pressure sensor according to claim 1, wherein the gel-like protective material is silicone gel.
JP04095703A 1992-04-16 1992-04-16 Semiconductor pressure sensor Expired - Fee Related JP3092307B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP04095703A JP3092307B2 (en) 1992-04-16 1992-04-16 Semiconductor pressure sensor
DE69302521T DE69302521T2 (en) 1992-04-16 1993-02-26 Packing structure of a pressure sensor assembly with semiconductors
EP93103125A EP0568781B1 (en) 1992-04-16 1993-02-26 A semiconductor pressure sensor assembly having an improved package structure
US08/024,454 US5266827A (en) 1992-04-16 1993-03-01 Semiconductor pressure sensor assembly having an improved package structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04095703A JP3092307B2 (en) 1992-04-16 1992-04-16 Semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPH05291590A true JPH05291590A (en) 1993-11-05
JP3092307B2 JP3092307B2 (en) 2000-09-25

Family

ID=14144870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04095703A Expired - Fee Related JP3092307B2 (en) 1992-04-16 1992-04-16 Semiconductor pressure sensor

Country Status (4)

Country Link
US (1) US5266827A (en)
EP (1) EP0568781B1 (en)
JP (1) JP3092307B2 (en)
DE (1) DE69302521T2 (en)

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KR100708989B1 (en) * 2005-08-02 2007-04-18 미츠비시덴키 가부시키가이샤 Semiconductor pressure sensor
JP2010129951A (en) * 2008-12-01 2010-06-10 Alps Electric Co Ltd Sensor package and method of manufacturing the same
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JP2002310828A (en) * 2001-04-19 2002-10-23 Hitachi Ltd Semiconductor pressure sensor
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JP2016183943A (en) * 2015-03-27 2016-10-20 株式会社フジクラ Semiconductor Pressure Sensor

Also Published As

Publication number Publication date
EP0568781A1 (en) 1993-11-10
JP3092307B2 (en) 2000-09-25
EP0568781B1 (en) 1996-05-08
US5266827A (en) 1993-11-30
DE69302521D1 (en) 1996-06-13
DE69302521T2 (en) 1996-09-12

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