JP2016183943A - Semiconductor Pressure Sensor - Google Patents

Semiconductor Pressure Sensor Download PDF

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JP2016183943A
JP2016183943A JP2015065431A JP2015065431A JP2016183943A JP 2016183943 A JP2016183943 A JP 2016183943A JP 2015065431 A JP2015065431 A JP 2015065431A JP 2015065431 A JP2015065431 A JP 2015065431A JP 2016183943 A JP2016183943 A JP 2016183943A
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pressure sensor
sensor element
bonding
housing recess
connection terminal
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直樹 高山
Naoki Takayama
直樹 高山
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Fujikura Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

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  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Pressure Sensors (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor that measures pressure of an object to be measured suitably and has improved electrical reliability.SOLUTION: A semiconductor pressure sensor 1 comprises: a substrate 2 that has a housing recess 11 that is open upward and a connection terminal 12 that is exposed to the bottom of the housing recess; a pressure sensor element 3 that is provided at the bottom of the housing recess; a bonding wire 4 that electrically connects the pressure sensor element and the connection terminal mutually; and a protective agent 5 that is contained in the housing recess and covers the pressure sensor element, the connection terminal, and the bonding wire. The position at which the bonding wire is bonded to the pressure sensor element is closer to the center C1 of the housing recess than the position at which the bonding wire is bonded to the connection terminal. The bonding wire is bonded to the connection terminal using first bonding. The bonding wire is bonded to the pressure sensor element using second bonding.SELECTED DRAWING: Figure 2

Description

本発明は、半導体圧力センサに関する。   The present invention relates to a semiconductor pressure sensor.

従来の半導体圧力センサには、例えば特許文献１のように、樹脂ケース内において半導体歪みゲージを有する感圧センサチップ（圧力センサ素子）とリード端子（接続端子部）とをボンディングワイヤ（以下、ワイヤと呼ぶ）によって電気接続した上で、樹脂ケース内に軟質なゲル状樹脂（保護剤）を充填したものがある。この半導体圧力センサでは、感圧センサチップ、リード端子及びワイヤが、軟質なゲル状樹脂によって覆われ、保護される。
この種の半導体圧力センサでは、測定対象（外部）の圧力がゲル状樹脂を介して感圧センサチップに伝わることで測定される。 In a conventional semiconductor pressure sensor, for example, as in Patent Document 1, a pressure-sensitive sensor chip (pressure sensor element) having a semiconductor strain gauge in a resin case and a lead terminal (connection terminal portion) are bonded to a bonding wire (hereinafter referred to as a wire). In some cases, the resin case is filled with a soft gel-like resin (protective agent). In this semiconductor pressure sensor, the pressure sensitive sensor chip, the lead terminal, and the wire are covered and protected by a soft gel-like resin.
In this type of semiconductor pressure sensor, the pressure of the measurement target (external) is measured by being transmitted to the pressure-sensitive sensor chip via the gel resin.

特開２００１−１１６６３９号公報Japanese Patent Application Laid-Open No. 2001-116639

ところで、上記従来の半導体圧力センサにおいて、感圧センサチップとリード端子とをワイヤで接続する際には、はじめに、感圧センサチップ（上面の電極パッド）にワイヤの先端を接合する第一ボンディングを行い、次にボンダーのヘッドを電極パッドの直上に移動させる。その後、ボンダーのヘッドをリード端子に向けて移動させ、リード端子にワイヤの後端を接合する第二ボンディングを行う。この順序でワイヤボンディングが行われると、ループ状に形成されたワイヤの頂部（ワイヤのうち収容凹部の底部に対して最も高く位置する部分）は、感圧センサチップ上もしくはその近傍に位置する。   By the way, in the conventional semiconductor pressure sensor, when the pressure sensor chip and the lead terminal are connected by a wire, first, the first bonding for joining the tip of the wire to the pressure sensor chip (the electrode pad on the upper surface) is performed. Next, the bonder head is moved directly above the electrode pad. Thereafter, the bonder head is moved toward the lead terminal, and second bonding is performed to join the rear end of the wire to the lead terminal. When wire bonding is performed in this order, the top of the wire formed in a loop shape (the portion of the wire that is positioned highest with respect to the bottom of the housing recess) is positioned on or near the pressure-sensitive sensor chip.

一方、半導体圧力センサにおいて、感圧センサチップによって測定対象の圧力を好適に測定するためには、感圧センサチップ上におけるゲル状樹脂の厚みを、できるだけ薄くすることが望ましい。しかしながら、感圧センサチップ上におけるゲル状樹脂の厚みを薄くすると、感圧センサチップ上に位置するワイヤの頂部が外部に露出してしまう可能性がある。この場合、ワイヤがゲル状樹脂によって保護されないため、半導体圧力センサの電気的な信頼性が得られない、という問題が生じる。
なお、ワイヤの頂部を覆うようにゲル状樹脂の厚みを厚く設定すると、感圧センサチップ上のゲル状樹脂の厚みが大きくなり、外部の圧力を好適に測定できない可能性がある。 On the other hand, in the semiconductor pressure sensor, in order to suitably measure the pressure to be measured by the pressure-sensitive sensor chip, it is desirable to reduce the thickness of the gel-like resin on the pressure-sensitive sensor chip as much as possible. However, if the thickness of the gel-like resin on the pressure-sensitive sensor chip is reduced, the top of the wire located on the pressure-sensitive sensor chip may be exposed to the outside. In this case, since the wire is not protected by the gel-like resin, there arises a problem that the electrical reliability of the semiconductor pressure sensor cannot be obtained.
Note that if the thickness of the gel-like resin is set so as to cover the top of the wire, the thickness of the gel-like resin on the pressure-sensitive sensor chip increases, and the external pressure may not be measured appropriately.

本発明は、上述した事情に鑑みてなされたものであって、外部の圧力を好適に測定できると共に、半導体圧力センサの電気的な信頼性を向上できる半導体圧力センサを提供することを目的とする。   The present invention has been made in view of the above-described circumstances, and an object thereof is to provide a semiconductor pressure sensor that can suitably measure an external pressure and improve the electrical reliability of the semiconductor pressure sensor. .

本発明に係る半導体圧力センサは、上方に開口する収容凹部、及び、前記収容凹部の底部に露出する接続端子部を有する基体部と、前記収容凹部の底部に設けられる圧力センサ素子と、前記圧力センサ素子及び前記接続端子部を相互に電気接続するボンディングワイヤと、前記収容凹部に充填され、前記圧力センサ素子、前記接続端子部及び前記ボンディングワイヤを覆う保護剤と、を備え、前記収容凹部の開口側から見て、前記圧力センサ素子における前記ボンディングワイヤの接合位置が、前記接続端子部における前記ボンディングワイヤの接合位置よりも前記収容凹部の中央の近くに位置し、前記ボンディングワイヤが、前記接続端子部に第一ボンディングで接合されると共に、前記圧力センサ素子に第二ボンディングで接合されることを特徴とする。   The semiconductor pressure sensor according to the present invention includes an accommodating recess opening upward, a base portion having a connection terminal portion exposed at the bottom of the accommodating recess, a pressure sensor element provided at the bottom of the accommodating recess, and the pressure A bonding wire that electrically connects the sensor element and the connection terminal portion to each other; and a protective agent that fills the housing recess and covers the pressure sensor element, the connection terminal portion, and the bonding wire. When viewed from the opening side, the bonding position of the bonding wire in the pressure sensor element is located closer to the center of the housing recess than the bonding position of the bonding wire in the connection terminal portion, and the bonding wire is connected to the connection wire. Bonded to the terminal part by first bonding and bonded to the pressure sensor element by second bonding. The features.

上記半導体圧力センサでは、収容凹部に充填された保護剤の厚みを、収容凹部の開口側から見た収容凹部の中央において最も薄くし、収容凹部の中央から周縁に向かうにしたがって厚くすることができる。
一方、ボンディングワイヤは、接続端子部に対して第一ボンディングで接合され、圧力センサ素子に第二ボンディングで接合される。このため、収容凹部の底部上においてループ状に形成されるボンディングワイヤの高さは、圧力センサ素子から接続端子部に向かうにしたがって高くなる。すなわち、ボンディングワイヤの頂部を、圧力センサ素子の外側に位置させることができる。
また、第二ボンディングは、ボンディングワイヤと圧力センサ素子の接合面とを互いに擦り付けるようにして行われるため、第二ボンディングが行われた接合部においては、ボンディングワイヤと圧力センサ素子の表面とが、ほぼ平行となる。 In the semiconductor pressure sensor, the thickness of the protective agent filled in the housing recess can be made the thinnest at the center of the housing recess as viewed from the opening side of the housing recess, and can be increased from the center of the housing recess toward the periphery. .
On the other hand, the bonding wire is bonded to the connection terminal portion by first bonding, and is bonded to the pressure sensor element by second bonding. For this reason, the height of the bonding wire formed in a loop shape on the bottom of the housing recess increases as it goes from the pressure sensor element to the connection terminal. That is, the top of the bonding wire can be positioned outside the pressure sensor element.
In addition, since the second bonding is performed by rubbing the bonding wire and the bonding surface of the pressure sensor element to each other, the bonding wire and the surface of the pressure sensor element are bonded to each other at the bonding portion where the second bonding is performed. It becomes almost parallel.

ここで、圧力センサ素子におけるボンディングワイヤの接合位置は、接続端子部におけるボンディングワイヤの接合位置よりも収容凹部の中央の近くに位置する。このため、圧力センサ素子とボンディングワイヤとの接合位置における保護剤の厚みは、接続端子部におけるボンディングワイヤとの接合位置における保護剤の厚みよりも薄くなる。また、収容凹部の底部上でループ状に形成されるボンディングワイヤの高さは、収容凹部の中央から周縁に向かうにしたがって高くなる。
以上のことから、圧力センサ素子上における保護剤の厚みを薄く抑えると共に、ボンディングワイヤを保護剤に埋めることが可能となる。したがって、本発明の半導体圧力センサによれば、測定対象の圧力を好適に測定できると共に、電気的な信頼性向上を図ることも可能となる。 Here, the bonding position of the bonding wire in the pressure sensor element is located closer to the center of the housing recess than the bonding position of the bonding wire in the connection terminal portion. For this reason, the thickness of the protective agent at the bonding position between the pressure sensor element and the bonding wire is smaller than the thickness of the protective agent at the bonding position between the bonding terminal and the bonding wire. Further, the height of the bonding wire formed in a loop shape on the bottom of the housing recess increases from the center of the housing recess toward the periphery.
From the above, it is possible to reduce the thickness of the protective agent on the pressure sensor element and to bury the bonding wire in the protective agent. Therefore, according to the semiconductor pressure sensor of the present invention, it is possible to suitably measure the pressure of the measurement object and to improve the electrical reliability.

そして、前記半導体圧力センサにおいては、前記ボンディングワイヤの第一端を接合する前記接続端子部の接合面が、前記ボンディングワイヤの第二端を接合する前記圧力センサ素子の接合面よりも低く位置してもよい。   In the semiconductor pressure sensor, the joint surface of the connection terminal portion that joins the first end of the bonding wire is positioned lower than the joint surface of the pressure sensor element that joins the second end of the bonding wire. May be.

本発明によれば、測定対象の圧力を好適に測定できると共に、電気的な信頼性向上を図ることも可能な半導体圧力センサを提供できる。   ADVANTAGE OF THE INVENTION According to this invention, while being able to measure the pressure of a measuring object suitably, the semiconductor pressure sensor which can aim at electrical reliability improvement can be provided.

本発明の第一実施形態に係る半導体圧力センサを示す上面図である。It is a top view which shows the semiconductor pressure sensor which concerns on 1st embodiment of this invention. 図１のII−II矢視断面図である。It is II-II arrow sectional drawing of FIG. 図１，２の半導体圧力センサにおいて、圧力センサ素子と接続端子部とをボンディングワイヤによって接続する手順の一例を示す説明図である。In the semiconductor pressure sensor of FIG.1, 2, it is explanatory drawing which shows an example of the procedure which connects a pressure sensor element and a connection terminal part with a bonding wire. 本発明の第二実施形態に係る半導体圧力センサを示す上面図である。It is a top view which shows the semiconductor pressure sensor which concerns on 2nd embodiment of this invention. 図４のV−V矢視断面図である。It is a VV arrow sectional view of Drawing 4.

〔第一実施形態〕
以下、本発明に係る半導体圧力センサの第一実施形態について、図１〜３を参照して説明する。
以下の説明において、「上」及び「下」は、図２における上下に即している。また、高さ方向とは、図２における上方である。「平面視」とは、半導体圧力センサ１を上下方向から見ることを意味する。
図１，２に示すように、本実施形態の半導体圧力センサ１（以下、圧力センサ１と呼ぶ）は、基体部２と、圧力センサ素子３と、ボンディングワイヤ４と、保護剤５と、を備える。 [First embodiment]
Hereinafter, a first embodiment of a semiconductor pressure sensor according to the present invention will be described with reference to FIGS.
In the following description, “upper” and “lower” correspond to the upper and lower sides in FIG. Further, the height direction is the upper side in FIG. “Plan view” means that the semiconductor pressure sensor 1 is viewed from above and below.
As shown in FIGS. 1 and 2, the semiconductor pressure sensor 1 (hereinafter referred to as the pressure sensor 1) of this embodiment includes a base portion 2, a pressure sensor element 3, a bonding wire 4, and a protective agent 5. Prepare.

圧力センサ素子３は、外部の圧力を検知するものである。圧力センサ素子３は、ＭＥＭＳ（Micro Electro-Mechanical Systems）技術を利用した半導体圧力センサ素子である。
圧力センサ素子３としては、ピエゾ抵抗効果を用いたピエゾ抵抗式の圧力センサ素子の他、静電容量式等、その他の方式の圧力センサ素子であってよい。 The pressure sensor element 3 detects an external pressure. The pressure sensor element 3 is a semiconductor pressure sensor element using MEMS (Micro Electro-Mechanical Systems) technology.
The pressure sensor element 3 may be a pressure sensor element of another type such as a capacitance type in addition to a piezoresistive pressure sensor element using a piezoresistive effect.

ピエゾ抵抗式の圧力センサ素子としては、例えば、シリコン等からなる半導体基板の一面側に、ダイアフラム部と、基準圧力室としての密閉空間と、圧力によるダイアフラム部の歪抵抗の変化を測定するための複数の歪ゲージと、を備えるものが挙げられる。この例の圧力センサ素子では、ダイアフラム部が圧力を受けて撓むと、各歪ゲージにダイアフラム部の歪み量に応じた応力が発生する。この応力に応じて歪ゲージの抵抗値がピエゾ抵抗効果によって変化し、この抵抗値変化に応じてセンサ信号が出力される。これにより、圧力を計測することができる。   As a piezoresistive pressure sensor element, for example, on one surface side of a semiconductor substrate made of silicon or the like, a diaphragm portion, a sealed space as a reference pressure chamber, and a change in strain resistance of the diaphragm portion due to pressure are measured. And a plurality of strain gauges. In the pressure sensor element of this example, when the diaphragm portion receives pressure and bends, stress corresponding to the strain amount of the diaphragm portion is generated in each strain gauge. The resistance value of the strain gauge changes due to the piezoresistance effect according to this stress, and a sensor signal is output according to this resistance value change. Thereby, a pressure can be measured.

基体部２は、上方に開口する収容凹部１１、及び、収容凹部１１の底部に露出する接続端子部１２を有する。収容凹部１１の底部には、前述した圧力センサ素子３が設けられる。
本実施形態の収容凹部１１の底部には、圧力センサ素子３を搭載する搭載面１１ａと、接続端子部１２が露出する露出面１１ｂとがある。本実施形態では、露出面１１ｂが搭載面１１ａよりも低く位置する。露出面１１ｂには、複数（図示例では四つ）の接続端子部１２が露出している。複数の接続端子部１２は、収容凹部１１の開口側から見て一列に並んでいる。 The base portion 2 includes a housing recess 11 that opens upward, and a connection terminal portion 12 that is exposed at the bottom of the housing recess 11. The pressure sensor element 3 described above is provided at the bottom of the housing recess 11.
There are a mounting surface 11a on which the pressure sensor element 3 is mounted and an exposed surface 11b from which the connection terminal portion 12 is exposed at the bottom of the housing recess 11 of the present embodiment. In the present embodiment, the exposed surface 11b is positioned lower than the mounting surface 11a. A plurality (four in the illustrated example) of connection terminal portions 12 are exposed on the exposed surface 11b. The plurality of connection terminal portions 12 are arranged in a row when viewed from the opening side of the housing recess 11.

ボンディングワイヤ４（以下、センサ素子用ワイヤ４とも呼ぶ）は、金、銅、アルミニウム等の金属からなり、圧力センサ素子３及び接続端子部１２を相互に電気接続する。本実施形態では、センサ素子用ワイヤ４が複数の接続端子部１２と圧力センサ素子３との間に一つずつ設けられている。各センサ素子用ワイヤ４の第一端は、接続端子部１２の接合面１２ａに接合される。接続端子部１２の接合面１２ａは、収容凹部１１の露出面１１ｂと同一平面上に位置する。また、各センサ素子用ワイヤ４の第二端は、収容凹部１１の搭載面１１ａに搭載された状態で上方に向く圧力センサ素子３の回路形成面（接合面）３ａに接合される。本実施形態では、接続端子部１２の接合面１２ａが圧力センサ素子３の回路形成面３ａよりも低く位置する。   The bonding wire 4 (hereinafter also referred to as sensor element wire 4) is made of a metal such as gold, copper, or aluminum, and electrically connects the pressure sensor element 3 and the connection terminal portion 12 to each other. In the present embodiment, one sensor element wire 4 is provided between each of the plurality of connection terminal portions 12 and the pressure sensor element 3. The first end of each sensor element wire 4 is joined to the joint surface 12 a of the connection terminal portion 12. The joint surface 12 a of the connection terminal portion 12 is located on the same plane as the exposed surface 11 b of the housing recess 11. The second end of each sensor element wire 4 is joined to the circuit forming surface (joint surface) 3 a of the pressure sensor element 3 facing upward while being mounted on the mounting surface 11 a of the housing recess 11. In the present embodiment, the joint surface 12 a of the connection terminal portion 12 is positioned lower than the circuit formation surface 3 a of the pressure sensor element 3.

圧力センサ素子３における各センサ素子用ワイヤ４の接合位置ＢＰ２は、収容凹部１１の開口側から見て、接続端子部１２における各センサ素子用ワイヤ４の接合位置ＢＰ１よりも収容凹部１１の中央の近くに位置する。すなわち、同一のセンサ素子用ワイヤ４において接続端子部１２の接合面１２ａに接合される第一端が、圧力センサ素子３の回路形成面３ａに接合される第二端よりも収容凹部１１の中央から離れて位置する。図１、２において、符号Ｃ１は平面視した収容凹部１１の上下方向に延びる中心軸であり、上記した収容凹部１１の中央に対応している。
本実施形態では、収容凹部１１の開口側から見て、搭載面１１ａ及びこれに搭載された圧力センサ素子３の中心を、収容凹部１１の中央（中心軸Ｃ１）からずらして位置させることで、圧力センサ素子３における各センサ素子用ワイヤ４の接合位置ＢＰ２を収容凹部１１の中央に近づけている。 The joint position BP2 of each sensor element wire 4 in the pressure sensor element 3 is located in the center of the housing recess 11 more than the joint position BP1 of each sensor element wire 4 in the connection terminal portion 12 when viewed from the opening side of the housing recess 11. Located nearby. That is, in the same sensor element wire 4, the first end joined to the joint surface 12 a of the connection terminal portion 12 is more in the center of the housing recess 11 than the second end joined to the circuit forming surface 3 a of the pressure sensor element 3. Located away from. 1 and 2, reference numeral C <b> 1 is a central axis extending in the vertical direction of the housing recess 11 in plan view, and corresponds to the center of the housing recess 11 described above.
In the present embodiment, when viewed from the opening side of the housing recess 11, the mounting surface 11 a and the center of the pressure sensor element 3 mounted on the mounting surface 11 a are shifted from the center (center axis C 1) of the housing recess 11. The joint position BP2 of each sensor element wire 4 in the pressure sensor element 3 is brought close to the center of the housing recess 11.

また、センサ素子用ワイヤ４は、接続端子部１２の接合面１２ａに対して第一ボンディングで接合されると共に、圧力センサ素子３の回路形成面３ａに対して第二ボンディングで接合されている。すなわち、センサ素子用ワイヤ４は、図３（ｂ）及び図３（ｃ）に示すように形成される。以下、センサ素子用ワイヤ４の具体的な形成手順について説明する。   The sensor element wire 4 is bonded to the bonding surface 12 a of the connection terminal portion 12 by first bonding, and is bonded to the circuit forming surface 3 a of the pressure sensor element 3 by second bonding. That is, the sensor element wire 4 is formed as shown in FIGS. 3B and 3C. Hereinafter, a specific procedure for forming the sensor element wire 4 will be described.

はじめに、図３（ａ）に示すように、圧力センサ素子３の回路形成面３ａのうち、後述するワイヤＷの後端が接合される位置に、金属バンプＭＢを形成しておく。金属パンプＭＢは、任意の手法で形成されてよいが、図示例では、キャピラリＣＰを用いたボールボンディングを実施することで形成される。   First, as shown in FIG. 3A, a metal bump MB is formed at a position where a rear end of a wire W to be described later is joined on the circuit forming surface 3a of the pressure sensor element 3. The metal pump MB may be formed by any method, but in the illustrated example, it is formed by performing ball bonding using the capillary CP.

次に、図３（ｂ）に示すように、キャピラリＣＰを通して供給されるワイヤＷの先端を接続端子部１２の接合面１２ａに圧着する、すなわち第一ボンディングを実施する。
次いで、ワイヤＷがキャピラリＣＰから引き出されるようにキャピラリＣＰを上昇させる。この上昇の際、キャピラリＣＰは接続端子部１２の接合面１２ａの直上に位置し、少なくとも圧力センサ素子３に近づく方向に移動しない。また、本実施形態では、圧力センサ素子３の回路形成面３ａが接続端子部１２の接合面１２ａよりも高く位置するため、上記した上昇の際には、キャピラリＣＰを圧力センサ素子３の回路形成面３ａよりも高い位置まで移動させる。 Next, as shown in FIG. 3B, the tip of the wire W supplied through the capillary CP is pressure-bonded to the bonding surface 12a of the connection terminal portion 12, that is, first bonding is performed.
Next, the capillary CP is raised so that the wire W is pulled out from the capillary CP. At the time of this rise, the capillary CP is located immediately above the joint surface 12 a of the connection terminal portion 12 and does not move at least in a direction approaching the pressure sensor element 3. In the present embodiment, the circuit forming surface 3a of the pressure sensor element 3 is positioned higher than the joint surface 12a of the connection terminal portion 12. Therefore, the capillary CP is formed in the circuit of the pressure sensor element 3 during the above-described rise. Move to a position higher than the surface 3a.

その後、図３（ｃ）に示すように、キャピラリＣＰから引き出されたワイヤＷの後端を圧力センサ素子３の回路形成面３ａに圧着する、すなわち第二ボンディングを実施する。第二ボンディングの際には、ワイヤＷがキャピラリＣＰから引き出されるように、キャピラリＣＰを接続端子部１２の接合面１２ａの直上から圧力センサ素子３の回路形成面３ａに向けて移動させる。すなわち、キャピラリＣＰを下降させながら収容凹部１１の中央に近づく方向（径方向内側）に移動させる。第二ボンディングを実施する際には、ワイヤＷの後端が金属バンプＭＢに圧着される。これにより、キャピラリＣＰによってワイヤＷの後端を圧力センサ素子３に押し付ける力の少なくとも一部が、金属バンプＭＢによって吸収され、圧力センサ素子３にかかる応力を緩和できる。
また、第二ボンディングは、ワイヤＷと圧力センサ素子３の回路形成面３ａとを互いに擦り付けるようにして行われるため、第二ボンディングが行われた接合部においては、ワイヤＷと圧力センサ素子３の回路形成面３ａとが、ほぼ平行となる。
以上により、センサ素子用ワイヤ４が形成される。 Thereafter, as shown in FIG. 3C, the rear end of the wire W drawn from the capillary CP is pressed against the circuit forming surface 3a of the pressure sensor element 3, that is, second bonding is performed. In the second bonding, the capillary CP is moved from directly above the joint surface 12a of the connection terminal portion 12 toward the circuit formation surface 3a of the pressure sensor element 3 so that the wire W is pulled out from the capillary CP. That is, the capillary CP is moved downward in the direction approaching the center of the housing recess 11 (in the radial direction). When performing the second bonding, the rear end of the wire W is pressure-bonded to the metal bump MB. Thereby, at least a part of the force pressing the rear end of the wire W against the pressure sensor element 3 by the capillary CP is absorbed by the metal bump MB, and the stress applied to the pressure sensor element 3 can be relieved.
Further, since the second bonding is performed by rubbing the wire W and the circuit forming surface 3a of the pressure sensor element 3, the wire W and the pressure sensor element 3 are bonded to each other at the joint portion where the second bonding is performed. The circuit forming surface 3a is substantially parallel to the circuit forming surface 3a.
Thus, the sensor element wire 4 is formed.

上記の手順でセンサ素子用ワイヤ４が形成されるため、図２に示すように、収容凹部１１の底部上においてループ状に形成されるセンサ素子用ワイヤ４の高さは、圧力センサ素子３から接続端子部１２に向かうにしたがって高くなる。すなわち、センサ素子用ワイヤ４の頂部４Ａを圧力センサ素子３の側部よりも外側に位置させることができる。センサ素子用ワイヤ４の頂部４Ａは、収容凹部１１の上方の開口から飛び出ないように形成されていればよい。   Since the sensor element wire 4 is formed by the above procedure, as shown in FIG. 2, the height of the sensor element wire 4 formed in a loop shape on the bottom of the housing recess 11 is determined from the pressure sensor element 3. It becomes higher toward the connection terminal portion 12. That is, the top part 4 </ b> A of the sensor element wire 4 can be positioned outside the side part of the pressure sensor element 3. The top portion 4 </ b> A of the sensor element wire 4 only needs to be formed so as not to protrude from the opening above the accommodation recess 11.

保護剤５は、基体部２の収容凹部１１に充填されて、収容凹部１１、接続端子部１２及びセンサ素子用ワイヤ４を覆う。保護剤５は、水や外気の浸入を防ぎ、圧力センサ素子３やセンサ素子用ワイヤ４への悪影響を防ぐ。
保護剤５は、測定対象（収容凹部１１の外部）から加えられる圧力を圧力センサ素子３に伝達可能である。すなわち、保護剤５としては、例えば、ショアＡ硬度１未満（ショアＡ硬度。ＪＩＳ Ｋ ６２５３に準拠）の柔らかいゲル剤を用いるとよい。この場合、保護剤５は、測定対象から加えられる圧力をそのまま圧力センサ素子３に伝達することができる。 The protective agent 5 is filled in the housing recess 11 of the base body 2 and covers the housing recess 11, the connection terminal portion 12, and the sensor element wire 4. The protective agent 5 prevents water and outside air from entering, and prevents adverse effects on the pressure sensor element 3 and the sensor element wire 4.
The protective agent 5 can transmit the pressure applied from the measurement target (outside the housing recess 11) to the pressure sensor element 3. That is, as the protective agent 5, for example, a soft gel agent having a Shore A hardness of less than 1 (Shore A hardness; conforming to JIS K 6253) may be used. In this case, the protective agent 5 can transmit the pressure applied from the measurement target to the pressure sensor element 3 as it is.

さらに、保護剤５は、収容凹部１１の内面に対して良好な濡れ性を有する液状やゲル状であると良い。また、保護剤５は高い粘性を持つとよい。このような保護剤５としては、例えば、シリコーン樹脂やフッ素系の樹脂が挙げられる。
また、保護剤５は、光透過性が低いことが望ましい。これによって、可視光や紫外線を遮断することができるため、圧力センサ素子３に光起電力を発生させることを防ぎ、測定誤差を低減できる。また、圧力センサ素子３やその周囲の配線の劣化を防ぐ効果も期待できる。保護剤５は、例えば顔料等を含有させることによって、光透過性を低くすることができる。 Further, the protective agent 5 is preferably in the form of a liquid or gel having good wettability with respect to the inner surface of the housing recess 11. Moreover, the protective agent 5 is good to have high viscosity. Examples of such a protective agent 5 include a silicone resin and a fluorine-based resin.
Further, it is desirable that the protective agent 5 has low light transmittance. As a result, visible light and ultraviolet rays can be blocked, so that it is possible to prevent the pressure sensor element 3 from generating a photovoltaic force and to reduce measurement errors. Moreover, the effect which prevents the deterioration of the pressure sensor element 3 and the wiring around it can also be expected. For example, the protective agent 5 can have low light transmittance by containing a pigment or the like.

上記した保護剤５は、その表面５ａが収容凹部１１の上方の開口端よりも低く位置するように、収容凹部１１に充填される。保護剤５を収容凹部１１に充填した状態では、保護剤５の厚みが、収容凹部１１の中央（中心軸Ｃ１）において最も薄くなり、収容凹部１１の中央から周縁に向かうにしたがって厚くなる。すなわち、上方に向く保護剤５の表面５ａは、下方側に窪むような凹面状に形成される。   The above-mentioned protective agent 5 is filled in the housing recess 11 so that the surface 5a is positioned lower than the opening end above the housing recess 11. In a state in which the storage recess 11 is filled with the protective agent 5, the thickness of the protection agent 5 is the thinnest at the center (central axis C <b> 1) of the storage recess 11 and increases from the center of the storage recess 11 toward the periphery. That is, the surface 5a of the protective agent 5 facing upward is formed in a concave shape that is recessed downward.

以下、本実施形態の圧力センサ１の構成について、より具体的に説明する。
本実施形態の圧力センサ１は、制御素子６を備える。制御素子６は、上記した圧力センサ素子３に電気接続される。本実施形態において、制御素子６は、ボンディングワイヤ７（後述）、接続端子部１２、センサ素子用ワイヤ４を介して圧力センサ素子３に電気接続される。
制御素子６は、圧力センサ素子３からのセンサ信号が入力された際に、センサ信号を処理して圧力検出信号として出力するように構成されている。また、制御素子６は、例えば、圧力センサ素子３のＯＮ／ＯＦＦ制御、内蔵する温度センサによる検出値の補正、検出データのＡ／Ｄ変換、リニアリティの補正、信号波形の整形などの機能を有する。 Hereinafter, the configuration of the pressure sensor 1 of the present embodiment will be described more specifically.
The pressure sensor 1 of this embodiment includes a control element 6. The control element 6 is electrically connected to the pressure sensor element 3 described above. In the present embodiment, the control element 6 is electrically connected to the pressure sensor element 3 via a bonding wire 7 (described later), a connection terminal portion 12, and a sensor element wire 4.
The control element 6 is configured to process the sensor signal and output it as a pressure detection signal when the sensor signal from the pressure sensor element 3 is input. The control element 6 has functions such as ON / OFF control of the pressure sensor element 3, correction of a detection value by a built-in temperature sensor, A / D conversion of detection data, correction of linearity, and shaping of a signal waveform. .

すなわち、制御素子６は、例えば、外部温度を測定する温度センサ（図示略）と、温度センサからの信号をＡ／Ｄ変換して温度信号として出力するＡ／Ｄ変換器（図示略）と、前記温度信号が入力される演算処理部（図示略）と、を備える構造を採用できる。
演算処理部では、上記した温度信号に基づいて、圧力センサ素子３からのセンサ信号に補正処理を行うことができる。
温度センサとしては、抵抗式（ブリッジ抵抗式）、ダイオード式、熱電対式、赤外線式などがある。温度センサは、制御素子６の内部において回路形成面６ａに近接した位置に設けることができる。 That is, the control element 6 includes, for example, a temperature sensor (not shown) that measures an external temperature, an A / D converter (not shown) that A / D converts a signal from the temperature sensor and outputs it as a temperature signal, A structure including an arithmetic processing unit (not shown) to which the temperature signal is input can be adopted.
The arithmetic processing unit can perform correction processing on the sensor signal from the pressure sensor element 3 based on the temperature signal described above.
Examples of the temperature sensor include a resistance type (bridge resistance type), a diode type, a thermocouple type, and an infrared type. The temperature sensor can be provided at a position close to the circuit formation surface 6 a inside the control element 6.

本実施形態の基体部２は、圧力センサ素子３や制御素子６と共に圧力センサ１の回路を構成する配線構成部と、配線構成部を支持する樹脂製の支持体３０と、を備える。
配線構成部には、前述した接続端子部１２が含まれている。本実施形態の配線構成部は、導電性を有する板材からなるリードフレーム２０である。リードフレーム２０の形成材料としては、例えば銅（Ｃｕ）、鉄（Ｆｅ）等の金属が挙げられる。
リードフレーム２０は、前述した接続端子部１２をなすセンサ用リード部２１と、圧力センサ１の回路を外部と電気接続する外部端子をなす端子リード部２２と、を備える。センサ用リード部２１及び端子リード部２２は、いずれも短冊状に形成されている。 The base body 2 of the present embodiment includes a wiring component that forms a circuit of the pressure sensor 1 together with the pressure sensor element 3 and the control element 6, and a resin support 30 that supports the wiring component.
The wiring configuration portion includes the connection terminal portion 12 described above. The wiring component of the present embodiment is a lead frame 20 made of a conductive plate material. Examples of the material for forming the lead frame 20 include metals such as copper (Cu) and iron (Fe).
The lead frame 20 includes a sensor lead portion 21 that forms the connection terminal portion 12 and a terminal lead portion 22 that forms an external terminal that electrically connects the circuit of the pressure sensor 1 to the outside. The sensor lead portion 21 and the terminal lead portion 22 are both formed in a strip shape.

センサ用リード部２１は、図１に示すように、収容凹部１１の搭載面１１ａに搭載された圧力センサ素子３から離れる方向に延びている。本実施形態のリードフレーム２０は、このセンサ用リード部２１を複数（図示例では四つ）備える。複数のセンサ用リード部２１は、同一方向に延びており、互いに同じ高さに位置している。複数のセンサ用リード部２１は、その幅方向に互いに間隔をあけて一列に並べられている。このセンサ用リード部２１の上面は、接続端子部１２の接合面１２ａに対応する。   As shown in FIG. 1, the sensor lead portion 21 extends in a direction away from the pressure sensor element 3 mounted on the mounting surface 11 a of the housing recess 11. The lead frame 20 of the present embodiment includes a plurality (four in the illustrated example) of the sensor lead portions 21. The plurality of sensor lead portions 21 extend in the same direction and are positioned at the same height. The plurality of sensor lead portions 21 are arranged in a line at intervals in the width direction. The upper surface of the sensor lead portion 21 corresponds to the joint surface 12 a of the connection terminal portion 12.

図２に示すように、端子リード部２２は、支持体３０に封止された内部リード部２３と、支持体３０の外部に配される外部リード部２４と、を備える。
内部リード部２３は、前述したセンサ用リード部２１と同じ高さ位置に配され、センサ用リード部２１から離れる方向に延びる第一延出部２３Ａと、第一延出部２３Ａの延出方向先端から下方に延びる第二延出部２３Ｂと、を備える。第二延出部２３Ｂの延出方向先端は、支持体３０の下面３０ｂから外方に露出する。
外部リード部２４は、内部リード部２３の第二延出部２３Ｂの延出方向先端に連ねて形成されている。外部リード部２４は、支持体３０の下面３０ｂに沿って延びるように支持体３０の下面３０ｂに配されている。外部リード部２４の延出方向は、内部リード部２３の第一延出部２３Ａの延出方向と逆向きとなっている。 As shown in FIG. 2, the terminal lead portion 22 includes an internal lead portion 23 sealed by the support 30 and an external lead portion 24 disposed outside the support 30.
The internal lead portion 23 is disposed at the same height as the sensor lead portion 21 described above, and extends in a direction away from the sensor lead portion 21. The first extension portion 23 </ b> A extends in the first extension portion 23 </ b> A. A second extending portion 23B extending downward from the tip. The extension direction front-end | tip of the 2nd extension part 23B is exposed outside from the lower surface 30b of the support body 30. As shown in FIG.
The external lead portion 24 is formed continuously to the distal end of the second extension portion 23 </ b> B of the internal lead portion 23. The external lead portion 24 is disposed on the lower surface 30 b of the support body 30 so as to extend along the lower surface 30 b of the support body 30. The extending direction of the external lead portion 24 is opposite to the extending direction of the first extending portion 23 </ b> A of the internal lead portion 23.

また、本実施形態のリードフレーム２０は、制御素子６を搭載する板状の実装部２５を備える。本実施形態では、制御素子６が実装部２５の下面に搭載される。制御素子６は、例えばダイボンド樹脂を介して接着される。具体的なダイボンド樹脂としては、エポキシ樹脂、シリコーン樹脂等が挙げられる。
実装部２５は、前述したセンサ用リード部２１及び端子リード部２２の第一延出部２３Ａと同じ高さに位置し、これらセンサ用リード部２１と第一延出部２３Ａとの間に配される。センサ用リード部２１及び端子リード部２２の第一延出部２３Ａは、いずれも実装部２５の周囲に間隔をあけて配され、実装部２５から離れるように延びている。 Further, the lead frame 20 of the present embodiment includes a plate-like mounting portion 25 on which the control element 6 is mounted. In the present embodiment, the control element 6 is mounted on the lower surface of the mounting portion 25. The control element 6 is bonded via, for example, a die bond resin. Specific examples of the die bond resin include an epoxy resin and a silicone resin.
The mounting part 25 is located at the same height as the first lead part 23A of the sensor lead part 21 and the terminal lead part 22 described above, and is arranged between the sensor lead part 21 and the first extension part 23A. Is done. The sensor lead part 21 and the first extension part 23 </ b> A of the terminal lead part 22 are both arranged around the mounting part 25 with an interval and extend away from the mounting part 25.

実装部２５の下面に固定された制御素子６は、金、銅、アルミニウム等の金属からなるボンディングワイヤ７（以下、制御素子用ワイヤ７と呼ぶ）によって、センサ用リード部２１や端子リード部２２の第一延出部２３Ａに電気接続される。制御素子用ワイヤ７の両端は、下方に向く制御素子６の回路形成面６ａ、及び、センサ用リード部２１や端子リード部２２の第一延出部２３Ａの下面に接合される。   The control element 6 fixed to the lower surface of the mounting part 25 is a sensor lead part 21 or a terminal lead part 22 by a bonding wire 7 made of a metal such as gold, copper, or aluminum (hereinafter referred to as a control element wire 7). The first extending portion 23A is electrically connected. Both ends of the control element wire 7 are joined to the circuit forming surface 6 a of the control element 6 facing downward and the lower surface of the first extension portion 23 </ b> A of the sensor lead portion 21 and the terminal lead portion 22.

支持体３０は、例えばエポキシ系樹脂、ウレタン系樹脂、ポリイミド系樹脂、ポリアミド系樹脂、ポリエチレン、ポリフェニレンサルファイドなどの樹脂からなり、例えばモールド成形によって形成される。
支持体３０は、基台３１と、基台３１の上面に設けられて上方に突出する環状壁部３２と、を備える。
本実施形態において、基台３１は平面視円形の板状に形成されている。基台３１の板厚は、リードフレーム２０の厚み（リードフレーム２０をなす板材の厚み）と比較して十分に大きく設定されている。基台３１の上面のうち環状壁部３２の内縁側に位置する一部は、収容凹部１１の底部をなす。 The support 30 is made of a resin such as an epoxy resin, a urethane resin, a polyimide resin, a polyamide resin, polyethylene, or polyphenylene sulfide, and is formed by molding, for example.
The support 30 includes a base 31 and an annular wall portion 32 that is provided on the upper surface of the base 31 and protrudes upward.
In the present embodiment, the base 31 is formed in a circular plate shape in plan view. The plate thickness of the base 31 is set sufficiently larger than the thickness of the lead frame 20 (the thickness of the plate material forming the lead frame 20). A part of the upper surface of the base 31 located on the inner edge side of the annular wall portion 32 forms the bottom of the housing recess 11.

前述したリードフレーム２０のセンサ用リード部２１、第一延出部２３Ａ及び実装部２５は、基台３１の上面側に位置する。センサ用リード部２１、第一延出部２３Ａ及び実装部２５の下面及び側面は、基台３１に封止される。センサ用リード部２１、第一延出部２３Ａ及び実装部２５の上面は、基台３１によって封止されず、基台３１の上面と同一平面上に位置する。また、リードフレーム２０の第二延出部２３Ｂは、基台３１の上面から下面まで基台３１の板厚方向に延びている。さらに、リードフレーム２０の外部リード部２４は、支持体３０の下面３０ｂをなす基台３１の下面に配されている。   The sensor lead portion 21, the first extension portion 23 </ b> A, and the mounting portion 25 of the lead frame 20 described above are located on the upper surface side of the base 31. The lower surface and side surfaces of the sensor lead part 21, the first extension part 23 </ b> A, and the mounting part 25 are sealed by the base 31. The upper surfaces of the sensor lead portion 21, the first extension portion 23 </ b> A, and the mounting portion 25 are not sealed by the base 31 and are located on the same plane as the upper surface of the base 31. The second extending portion 23 </ b> B of the lead frame 20 extends in the plate thickness direction of the base 31 from the upper surface to the lower surface of the base 31. Furthermore, the external lead portion 24 of the lead frame 20 is disposed on the lower surface of the base 31 that forms the lower surface 30 b of the support 30.

環状壁部３２は、平面視円環状に形成された筒体であり、前述した基台３１と共に基体部２の収容凹部１１を画成する。このため、本実施形態では、収容凹部１１が平面視円形状に形成されている。また、環状壁部３２は、センサ用リード部２１及び第一延出部２３Ａの上面のうち、基台３１の径方向外側の部分を覆っている。図示例において、環状壁部３２の外径寸法は基台３１と同一に設定されているが、これに限ることはない。
平面視円環状に形成された環状壁部３２の上端面は、基準面３２ａと、基準面３２ａに対して階段状に低く位置する段差面３２ｂと、を有する。基準面３２ａは、環状壁部３２の上端面のうち内縁側の領域をなす。段差面３２ｂは、環状壁部３２の上端面のうち外縁側の領域をなす。図示例では、段差面３２ｂが基体部２の搭載面１１ａよりも高く位置している。 The annular wall portion 32 is a cylindrical body formed in an annular shape in plan view, and defines the housing recess 11 of the base portion 2 together with the base 31 described above. For this reason, in this embodiment, the accommodation recessed part 11 is formed in planar view circular shape. Further, the annular wall portion 32 covers the radially outer portion of the base 31 among the upper surfaces of the sensor lead portion 21 and the first extension portion 23A. In the illustrated example, the outer diameter of the annular wall portion 32 is set to be the same as that of the base 31, but is not limited thereto.
The upper end surface of the annular wall portion 32 formed in an annular shape in plan view has a reference surface 32a and a step surface 32b that is positioned stepwise lower than the reference surface 32a. The reference surface 32 a forms a region on the inner edge side of the upper end surface of the annular wall portion 32. The step surface 32 b forms a region on the outer edge side of the upper end surface of the annular wall portion 32. In the illustrated example, the step surface 32 b is positioned higher than the mounting surface 11 a of the base body 2.

また、本実施形態の支持体３０は、環状壁部３２の内縁側において基台３１の上面に設けられて圧力センサ素子３を搭載するための台座部３３を備える。
台座部３３は、環状壁部３２の高さ寸法に対して十分に小さい厚さ寸法を有する板状に形成されている。台座部３３は、基台３１の上面の一部を覆う。具体的には、台座部３３は、環状壁部３２の内縁側において、基台３１の上面から露出する実装部２５及び端子リード部２２の第一延出部２３Ａの上面を覆い、センサ用リード部２１の上面を覆わない。
台座部３３の上面は、本実施形態における収容凹部１１の搭載面１１ａに対応する。また、台座部３３によって覆われない基台３１の上面は、本実施形態における収容凹部１１の露出面１１ｂに対応する。 In addition, the support body 30 of the present embodiment includes a pedestal portion 33 provided on the upper surface of the base 31 on the inner edge side of the annular wall portion 32 for mounting the pressure sensor element 3.
The pedestal portion 33 is formed in a plate shape having a sufficiently small thickness dimension with respect to the height dimension of the annular wall portion 32. The pedestal portion 33 covers a part of the upper surface of the base 31. Specifically, the pedestal portion 33 covers the upper surface of the mounting portion 25 exposed from the upper surface of the base 31 and the first extension portion 23A of the terminal lead portion 22 on the inner edge side of the annular wall portion 32, and the sensor lead. The upper surface of the part 21 is not covered.
The upper surface of the pedestal portion 33 corresponds to the mounting surface 11a of the housing recess 11 in this embodiment. In addition, the upper surface of the base 31 that is not covered by the pedestal portion 33 corresponds to the exposed surface 11b of the housing recess 11 in the present embodiment.

次に、上記した圧力センサ１を製造する方法の一例について説明する。
圧力センサ１を製造する際には、はじめに、制御素子６をリードフレーム２０の実装部２５の下面に搭載し、制御素子用ワイヤ７によってセンサ用リード部２１（接続端子部１２）及び端子リード部２２の第一延出部２３Ａに電気接続する。
次いで、樹脂成形等により支持体３０を形成する。これにより、制御素子６及び制御素子用ワイヤ７は、支持体３０に埋設され、外部に露出しない。また、センサ用リード部２１の上面の一部は、収容凹部１１の底部に露出する。 Next, an example of a method for manufacturing the above-described pressure sensor 1 will be described.
When manufacturing the pressure sensor 1, first, the control element 6 is mounted on the lower surface of the mounting portion 25 of the lead frame 20, and the sensor lead portion 21 (connection terminal portion 12) and the terminal lead portion are connected by the control element wire 7. 22 is electrically connected to the first extending portion 23A.
Next, the support 30 is formed by resin molding or the like. Thereby, the control element 6 and the control element wire 7 are embedded in the support 30 and are not exposed to the outside. A part of the upper surface of the sensor lead 21 is exposed at the bottom of the housing recess 11.

その後、収容凹部１１の搭載面１１ａに圧力センサ素子３を設置し、センサ素子用ワイヤ４によってセンサ用リード部２１に電気接続する。具体的には、図３（ｂ）及び図３（ｃ）に示すように、センサ素子用ワイヤ４を、センサ用リード部２１の上面に対して第一ボンディングで接合し、圧力センサ素子３の回路形成面３ａに対して第二ボンディングで接合する。第二ボンディングは、センサ素子用ワイヤ４と圧力センサ素子３の回路形成面３ａとを互いに擦り付けるようにして行われるため、第二ボンディングが行われた接合部においては、センサ素子用ワイヤ４と圧力センサ素子３の回路形成面３ａとが、ほぼ平行となる。
最後に、図２に示すように、収容凹部１１に保護剤５を充填することで、収容凹部１１の底部に露出するセンサ用リード部２１の上面、圧力センサ素子３及びセンサ素子用ワイヤ４を覆う。この際には、保護剤５の表面５ａが収容凹部１１の上方の開口端よりも低く位置するように、保護剤５を収容凹部１１に充填する。
以上により、圧力センサ１の製造が完了する。 Thereafter, the pressure sensor element 3 is installed on the mounting surface 11 a of the housing recess 11, and is electrically connected to the sensor lead portion 21 by the sensor element wire 4. Specifically, as shown in FIGS. 3B and 3C, the sensor element wire 4 is bonded to the upper surface of the sensor lead portion 21 by first bonding, and the pressure sensor element 3 It joins with the 2nd bonding with respect to the circuit formation surface 3a. Since the second bonding is performed by rubbing the sensor element wire 4 and the circuit forming surface 3a of the pressure sensor element 3, the sensor element wire 4 and the pressure at the bonded portion where the second bonding is performed. The circuit formation surface 3a of the sensor element 3 is substantially parallel.
Finally, as shown in FIG. 2, by filling the housing recess 11 with the protective agent 5, the upper surface of the sensor lead 21 exposed at the bottom of the housing recess 11, the pressure sensor element 3 and the sensor element wire 4 are removed. cover. At this time, the storage recess 11 is filled with the protection agent 5 so that the surface 5 a of the protection agent 5 is positioned lower than the opening end above the storage recess 11.
Thus, the manufacture of the pressure sensor 1 is completed.

本実施形態の圧力センサ１では、収容凹部１１に充填された保護剤５の厚みが、収容凹部１１の中央（中心軸Ｃ１）において薄く、収容凹部１１の中央から周縁に向かうにしたがって厚くなる。
一方、収容凹部１１の底部上でループ状に形成されるセンサ素子用ワイヤ４の高さは、圧力センサ素子３から接続端子部１２（センサ用リード部２１）に向かうにしたがって高くなる。 In the pressure sensor 1 of the present embodiment, the thickness of the protective agent 5 filled in the housing recess 11 is thin at the center (central axis C1) of the housing recess 11 and increases from the center of the housing recess 11 toward the periphery.
On the other hand, the height of the sensor element wire 4 formed in a loop shape on the bottom of the housing recess 11 increases from the pressure sensor element 3 toward the connection terminal portion 12 (sensor lead portion 21).

ここで、圧力センサ素子３におけるセンサ素子用ワイヤ４の接合位置ＢＰ２は、接続端子部１２におけるセンサ素子用ワイヤ４の接合位置ＢＰ１よりも収容凹部１１の中央の近くに位置する。このため、圧力センサ素子３とセンサ素子用ワイヤ４との接合位置ＢＰ２における保護剤５の厚みは、接続端子部１２におけるセンサ素子用ワイヤ４との接合位置ＢＰ１における保護剤５の厚みよりも薄くなる。言い換えれば、保護剤５の表面５ａの高さは、収容凹部１１の中央から周縁に向かうにしたがって高くなる。また、収容凹部１１の底部上でループ状に形成されるセンサ素子用ワイヤ４の高さは、保護剤５の表面５ａの高さと同様に、収容凹部１１の中央から周縁に向かうにしたがって高くなる。
以上のことから、圧力センサ素子３上における保護剤５の厚みを薄く抑えると共に、センサ素子用ワイヤ４を保護剤５に埋めることが可能となる。したがって、本実施形態の圧力センサ１によれば、測定対象の圧力を好適に測定できると共に、電気的な信頼性向上を図ることも可能となる。 Here, the joining position BP2 of the sensor element wire 4 in the pressure sensor element 3 is located closer to the center of the housing recess 11 than the joining position BP1 of the sensor element wire 4 in the connection terminal portion 12. For this reason, the thickness of the protective agent 5 at the joint position BP2 between the pressure sensor element 3 and the sensor element wire 4 is smaller than the thickness of the protective agent 5 at the joint position BP1 with the sensor element wire 4 in the connection terminal portion 12. Become. In other words, the height of the surface 5a of the protective agent 5 increases from the center of the housing recess 11 toward the periphery. Further, the height of the sensor element wire 4 formed in a loop shape on the bottom of the housing recess 11 becomes higher from the center of the housing recess 11 toward the periphery, similarly to the height of the surface 5 a of the protective agent 5. .
From the above, it is possible to suppress the thickness of the protective agent 5 on the pressure sensor element 3 and to bury the sensor element wire 4 in the protective agent 5. Therefore, according to the pressure sensor 1 of the present embodiment, it is possible to suitably measure the pressure of the measurement target and to improve electrical reliability.

また、上記したようにセンサ素子用ワイヤ４のループ形状、及び、保護剤５の表面５ａの形状を相互に対応付けることで、収容凹部１１に充填する保護剤５の量を小さく抑えたり、収容凹部１１の深さ寸法を小さくすることが可能となる。したがって、圧力センサ１の小型軽量化や製造コスト削減を図ることもできる。   In addition, as described above, the loop shape of the sensor element wire 4 and the shape of the surface 5a of the protective agent 5 are associated with each other, so that the amount of the protective agent 5 filled in the storage concave portion 11 can be suppressed to be small. 11 can be reduced in depth. Therefore, the pressure sensor 1 can be reduced in size and weight and the manufacturing cost can be reduced.

さらに、本実施形態の圧力センサ１によれば、接続端子部１２の接合面１２ａが、圧力センサ素子３の回路形成面３ａよりも低く位置する。これにより、接続端子部１２の接合面１２ａの直上に位置するセンサ素子用ワイヤ４の頂部４Ａの高さ位置をより低く設定できる。したがって、センサ素子用ワイヤ４をより確実に保護剤５に埋めることができる。また、収容凹部１１に充填する保護剤５の量をさらに小さく抑えることも可能となる。   Furthermore, according to the pressure sensor 1 of the present embodiment, the joint surface 12 a of the connection terminal portion 12 is positioned lower than the circuit formation surface 3 a of the pressure sensor element 3. Thereby, the height position of the top part 4 </ b> A of the sensor element wire 4 positioned immediately above the joint surface 12 a of the connection terminal part 12 can be set lower. Therefore, the sensor element wire 4 can be more reliably embedded in the protective agent 5. In addition, it is possible to further reduce the amount of the protective agent 5 filled in the housing recess 11.

〔第二実施形態〕
次に、本発明の第二実施形態について、図４，５を参照して第一実施形態との相違点を中心に説明する。なお、第一実施形態と共通する構成については、同一符号を付し、その説明を省略する。 [Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIGS. 4 and 5 focusing on differences from the first embodiment. In addition, about the structure which is common in 1st embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

図４，５に示すように、本実施形態の圧力センサ１Ａは、基体部２の一部構成を除いて、第一実施形態と同様に構成されている。
本実施形態の基体部２は、第一実施形態と同様に、上方に開口する収容凹部１１、及び、収容凹部１１の底部に露出する接続端子部１２を有する。また、本実施形態の収容凹部１１の底部には、第一実施形態と同様の搭載面１１ａと露出面１１ｂとがある。また、接続端子部１２の接合面１２ａは収容凹部１１の露出面１１ｂと同一平面上に位置する。また、露出面１１ｂには、複数（図示例では四つ）の接続端子部１２が露出している。 As shown in FIGS. 4 and 5, the pressure sensor 1 </ b> A of the present embodiment is configured in the same manner as in the first embodiment except for a partial configuration of the base body 2.
Similarly to the first embodiment, the base body portion 2 of the present embodiment includes a housing recess 11 that opens upward, and a connection terminal portion 12 that is exposed at the bottom of the housing recess 11. Further, the bottom of the housing recess 11 of the present embodiment has a mounting surface 11a and an exposed surface 11b similar to those of the first embodiment. Further, the joint surface 12 a of the connection terminal portion 12 is located on the same plane as the exposed surface 11 b of the housing recess 11. A plurality (four in the illustrated example) of connecting terminal portions 12 are exposed on the exposed surface 11b.

ただし、本実施形態では、露出面１１ｂ及び接続端子部１２の接合面１２ａが搭載面１１ａよりも高く位置している。露出面１１ｂ及び接続端子部１２の接合面１２ａは、例えば搭載面１１ａに搭載された圧力センサ素子３の回路形成面３ａよりも高く位置してもよいが、図示例のように圧力センサ素子３の回路形成面３ａと同じ高さに位置してもよい。   However, in this embodiment, the exposed surface 11b and the joint surface 12a of the connection terminal portion 12 are positioned higher than the mounting surface 11a. The exposed surface 11b and the joint surface 12a of the connection terminal portion 12 may be positioned higher than the circuit forming surface 3a of the pressure sensor element 3 mounted on the mounting surface 11a, for example, but the pressure sensor element 3 as shown in the illustrated example. It may be located at the same height as the circuit forming surface 3a.

また、本実施形態では、収容凹部１１の開口側から見て、搭載面１１ａに搭載された圧力センサ素子３の中心を収容凹部１１の中央（中心軸Ｃ１）に一致させると共に、複数の接続端子部１２を圧力センサ素子３の周りに配置している。すなわち、複数の接続端子部１２が周方向に配列している。
これにより、本実施形態では、第一実施形態と同様に、収容凹部１１の開口側から見て、圧力センサ素子３における各センサ素子用ワイヤ４の接合位置ＢＰ２が、接続端子部１２における各センサ素子用ワイヤ４の接合位置ＢＰ１よりも収容凹部１１の中央の近くに位置する。
そして、センサ素子用ワイヤ４は、第一実施形態と同様に、接続端子部１２の接合面１２ａに対して第一ボンディングで接合されると共に、圧力センサ素子３の回路形成面３ａに対して第二ボンディングで接合される。 In the present embodiment, the center of the pressure sensor element 3 mounted on the mounting surface 11a is aligned with the center (center axis C1) of the housing recess 11 when viewed from the opening side of the housing recess 11 and a plurality of connection terminals are provided. The part 12 is arranged around the pressure sensor element 3. That is, the plurality of connection terminal portions 12 are arranged in the circumferential direction.
As a result, in this embodiment, as in the first embodiment, the bonding position BP2 of each sensor element wire 4 in the pressure sensor element 3 as viewed from the opening side of the housing recess 11 is the sensor in the connection terminal section 12. It is located closer to the center of the housing recess 11 than the joining position BP1 of the element wire 4.
As in the first embodiment, the sensor element wire 4 is bonded to the bonding surface 12a of the connection terminal portion 12 by the first bonding and is connected to the circuit forming surface 3a of the pressure sensor element 3. Joined by two bonding.

また、本実施形態の基体部２は、第一実施形態と同様に、圧力センサ１Ａの回路を構成する配線構成部としてのリードフレーム４０と、リードフレーム４０を支持する樹脂製の支持体５０と、を備える。リードフレーム４０は、第一実施形態と同様のセンサ用リード部４１を備え、センサ用リード部４１は前述した接続端子部１２をなす。   In addition, as in the first embodiment, the base body portion 2 of the present embodiment includes a lead frame 40 as a wiring component that constitutes the circuit of the pressure sensor 1A, and a resin support 50 that supports the lead frame 40. . The lead frame 40 includes a sensor lead 41 similar to that of the first embodiment, and the sensor lead 41 forms the connection terminal portion 12 described above.

支持体５０は、第一実施形態と同様に、基台５１と、基台５１の上面に設けられて上方に突出する環状壁部５２とを備える。基台５１は平面視円形の板状に形成され、環状壁部５２は平面視円環状の筒体に形成されている。
ただし、本実施形態の基台５１は、その上面から窪んで形成された窪み部５１Ａを有する。窪み部５１Ａは、前述した収容凹部１１の一部を構成し、圧力センサ素子３の収容領域となっている。すなわち、窪み部５１Ａの底面は、本実施形態における収容凹部１１の搭載面１１ａに対応する。図１において、窪み部５１Ａは、圧力センサ素子３の平面視形状に対応するように平面視矩形状に形成されているが、これに限ることはない。 As in the first embodiment, the support 50 includes a base 51 and an annular wall portion 52 that is provided on the upper surface of the base 51 and protrudes upward. The base 51 is formed in a circular plate shape in plan view, and the annular wall portion 52 is formed in a cylindrical body in plan view.
However, the base 51 of the present embodiment has a dent 51A formed to be recessed from the upper surface thereof. The recessed portion 51 </ b> A constitutes a part of the housing recess 11 described above and serves as a housing area for the pressure sensor element 3. That is, the bottom surface of the recess 51A corresponds to the mounting surface 11a of the housing recess 11 in the present embodiment. In FIG. 1, the recess 51 </ b> A is formed in a rectangular shape in plan view so as to correspond to the shape in plan view of the pressure sensor element 3, but is not limited thereto.

センサ用リード部４１は、第一実施形態の場合と同様に、基台５１の上面側に位置する。また、センサ用リード部４１の下面及び側面は基台５１に封止される。センサ用リード部４１の上面は基台５１に封止されず、基台５１の上面と同一平面上に位置する。
ただし、本実施形態では、複数（図示例では四つ）のセンサ用リード部４１が、窪み部５１Ａの周囲に等間隔で配列されている。 The sensor lead 41 is located on the upper surface side of the base 51 as in the case of the first embodiment. Further, the lower surface and the side surface of the sensor lead 41 are sealed by the base 51. The upper surface of the sensor lead 41 is not sealed by the base 51, and is located on the same plane as the upper surface of the base 51.
However, in the present embodiment, a plurality (four in the illustrated example) of sensor lead portions 41 are arranged around the recess portion 51A at equal intervals.

環状壁部５２は、前述した基台５１の窪み部５１Ａと共に収容凹部１１を画成する。環状壁部５２は、第一実施形態と同様に、センサ用リード部４１の上面のうち、基台５１の径方向外側の部分を覆っている。
ただし、本実施形態では、環状壁部５２の外径寸法が基台５１よりも小さく設定されている。また、環状壁部５２の上端面は、基台５１の上面に対して階段状に高く位置する。さらに、本実施形態では、環状壁部５２の内縁側に位置する基台５１の上面が、本実施形態における収容凹部１１の露出面１１ｂに対応する。 The annular wall 52 defines the accommodating recess 11 together with the above-described recess 51 </ b> A of the base 51. Similar to the first embodiment, the annular wall portion 52 covers a radially outer portion of the base 51 in the upper surface of the sensor lead portion 41.
However, in this embodiment, the outer diameter dimension of the annular wall portion 52 is set smaller than the base 51. In addition, the upper end surface of the annular wall portion 52 is positioned higher in a stepwise manner than the upper surface of the base 51. Furthermore, in the present embodiment, the upper surface of the base 51 positioned on the inner edge side of the annular wall portion 52 corresponds to the exposed surface 11b of the housing recess 11 in the present embodiment.

図４，５には図示されていないが、本実施形態の圧力センサ１Ａは、例えば、第一実施形態と同様の制御素子や、リードフレームの端子リード部や搭載部などを備えてもよい。本実施形態の圧力センサ１Ａでは、例えば、端子リード部の第一延出部や搭載部の上面が、基台５１の上面に露出しないように、基台５１内部に埋設されればよい。   Although not shown in FIGS. 4 and 5, the pressure sensor 1 </ b> A of the present embodiment may include, for example, the same control element as that of the first embodiment, the terminal lead portion of the lead frame, the mounting portion, and the like. In the pressure sensor 1 </ b> A of the present embodiment, for example, the first extending portion of the terminal lead portion and the upper surface of the mounting portion may be embedded in the base 51 so that the upper surface of the base 51 is not exposed.

上記した本実施形態の圧力センサ１Ａは、上記した第一実施形態と同様の製造方法により製造することが可能である。   The above-described pressure sensor 1A of the present embodiment can be manufactured by the same manufacturing method as that of the first embodiment described above.

そして、本実施形態の圧力センサ１Ａによれば、第一実施形態と同様の効果を奏する。   And according to 1 A of pressure sensors of this embodiment, there exists an effect similar to 1st embodiment.

以上、本発明の詳細について説明したが、本発明は上述した実施形態に限定されるものではなく、本発明の主旨を逸脱しない範囲において種々の変更を加えることができる。   Although the details of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention.

例えば、配線構成部は、リードフレームに限らず、配線パターンを有するＰＣＢ（Printed Circuit Board）、ＦＰＣ（Flexible Printed Circuit）などのプリント配線基板であってもよい。   For example, the wiring configuration unit is not limited to a lead frame, but may be a printed wiring board such as a PCB (Printed Circuit Board) or FPC (Flexible Printed Circuit) having a wiring pattern.

また、圧力センサ素子３の搭載面１１ａは、支持体によって構成されることに限らず、リードフレーム、プリント配線基板等の配線構成部によって構成されてもよい。例えば、圧力センサ素子３の搭載面１１ａは、リードフレームの実装部の上面や、プリント配線基板の上面であってもよい。   In addition, the mounting surface 11a of the pressure sensor element 3 is not limited to being configured by a support, and may be configured by a wiring configuration unit such as a lead frame or a printed wiring board. For example, the mounting surface 11a of the pressure sensor element 3 may be the upper surface of the lead frame mounting portion or the upper surface of the printed wiring board.

１，１Ａ…半導体圧力センサ、２…基体部、３…圧力センサ素子、３ａ…回路形成面（接合面）、４…センサ素子用ワイヤ（ボンディングワイヤ）、５…保護剤、５ａ…表面、１１…収容凹部、１２…接続端子部、１２ａ…接合面、ＢＰ１，ＢＰ２…接合位置、Ｃ１…中心軸（収容凹部１１の中央） DESCRIPTION OF SYMBOLS 1,1A ... Semiconductor pressure sensor, 2 ... Base | substrate part, 3 ... Pressure sensor element, 3a ... Circuit formation surface (bonding surface), 4 ... Sensor element wire (bonding wire), 5 ... Protective agent, 5a ... Surface, 11 ... accommodating recess, 12 ... connection terminal, 12a ... joining surface, BP1, BP2 ... joining position, C1 ... center axis (center of accommodating recess 11)

Claims (2)

上方に開口する収容凹部、及び、前記収容凹部の底部に露出する接続端子部を有する基体部と、
前記収容凹部の底部に設けられる圧力センサ素子と、
前記圧力センサ素子及び前記接続端子部を相互に電気接続するボンディングワイヤと、
前記収容凹部に充填され、前記圧力センサ素子、前記接続端子部及び前記ボンディングワイヤを覆う保護剤と、を備え、
前記収容凹部の開口側から見て、前記圧力センサ素子における前記ボンディングワイヤの接合位置が、前記接続端子部における前記ボンディングワイヤの接合位置よりも前記収容凹部の中央の近くに位置し、
前記ボンディングワイヤが、前記接続端子部に第一ボンディングで接合されると共に、前記圧力センサ素子に第二ボンディングで接合されることを特徴とする半導体圧力センサ。 An accommodation recess opening upward, and a base portion having a connection terminal portion exposed at the bottom of the accommodation recess;
A pressure sensor element provided at the bottom of the housing recess;
A bonding wire that electrically connects the pressure sensor element and the connection terminal portion;
A protective agent that fills the housing recess and covers the pressure sensor element, the connection terminal portion, and the bonding wire;
When viewed from the opening side of the housing recess, the bonding position of the bonding wire in the pressure sensor element is located closer to the center of the housing recess than the bonding position of the bonding wire in the connection terminal portion,
The semiconductor pressure sensor, wherein the bonding wire is bonded to the connection terminal portion by first bonding and is bonded to the pressure sensor element by second bonding. 前記ボンディングワイヤの第一端を接合する前記接続端子部の接合面が、前記ボンディングワイヤの第二端を接合する前記圧力センサ素子の接合面よりも低く位置することを特徴とする請求項１に記載の半導体圧力センサ。   The bonding surface of the connection terminal portion for bonding the first end of the bonding wire is positioned lower than the bonding surface of the pressure sensor element for bonding the second end of the bonding wire. The semiconductor pressure sensor as described.
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