JP2005274219A - Semiconductor acceleration sensor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To miniaturize a package without lowering the degree of freedom of wiring. <P>SOLUTION: The package 10 is provided with recessed parts 11, 12 on the surface and the back respectively, and a rectangular though hole 13 is formed on the bottom surfaces of the two recessed parts 11, 12, to thereby form a hollow structure. An integrated circuit chip 2 is mounted so as to block the though hole 13 on the bottom surface of the recessed part 12 on the back side of the package 10. An acceleration sensor chip 1 is inserted into the though hole 13 from the recessed part 11 on the surface side of the package 10, and mounted adhesively on the surface of the integrated circuit chip 2 blocking the though hole 13. Since the acceleration sensor chip 1 and the integrated circuit chip 2 are mounted in the piled state across the though hole 13 from the surface side and the back side of the package 10, the package 10 can be miniaturized without lowering the degree of freedom of the wiring (conductive pattern), compared with a conventional example wherein a plurality of chips are mounted in the piled state on one surface of the package 10. <P>COPYRIGHT: (C)2006,JPO&amp;NCIPI

Description

  The present invention relates to a semiconductor acceleration sensor device in which an acceleration sensor chip is mounted in a package together with an integrated circuit chip, and a manufacturing method thereof.

  Conventionally, as an acceleration sensor chip (hereinafter abbreviated as a sensor chip) 40 formed by processing a semiconductor substrate such as a silicon substrate using semiconductor processing technology, a frame shape is formed by processing the semiconductor substrate as shown in FIG. A so-called cantilever in which a weight portion 42 slidably supported by a thin beam portion 41 is formed inside the support portion 43 and a plurality of piezoresistive elements (not shown) are formed on the beam portion 41. There is a beam type (see Patent Document 1). Here, the piezoresistive elements are formed at positions and orientations that can individually detect accelerations in, for example, triaxial directions. That is, when acceleration acts in each axial direction, the weight portion 42 swings, and the beam portion 41 is deformed and distorted according to the acceleration acting direction. Since the resistance value of the piezoresistive element changes due to the distortion of the beam portion 41, and the change in the resistance value varies depending on the direction of the action of acceleration, a piezoresistive element in each axial direction constitutes a bridge circuit and resistance due to the distortion. If the change in value is taken out as an electric signal, an electric signal (detection signal) of a level corresponding to the distortion of the beam portion 41, that is, the magnitude of the acting acceleration is obtained for each axial direction. The direction of acceleration and its magnitude can be detected by performing arithmetic processing (including amplification and temperature compensation) on detection signals obtained for each axial direction.

  By the way, as described above, a circuit for obtaining a detection signal from a bridge circuit of a piezoresistive element, a processing circuit for processing the detection signal obtained for each axial direction, and the like are formed as an integrated circuit (IC) chip 2. Then, the integrated circuit chip 2 is mounted on the package 100 together with the sensor chip 40 as shown in FIG. 18 to constitute a semiconductor acceleration sensor device. The package 100 is formed in a rectangular flat plate-like ceramic substrate 101 on which the sensor chip 40 and the integrated circuit chip 2 are mounted using, for example, a silicon-based or epoxy-based adhesive, and a box shape with one surface open. And a cover (not shown) attached to the mounting surface of the ceramic substrate 101 so as to cover. A conductive pattern (not shown) is formed on the ceramic substrate 101 of the package 100, and an electrode (not shown) provided on each chip and the conductive pattern are electrically connected by wire bonding.

  By the way, in the above conventional example, since the plurality of chips are mounted and arranged in a plane, it is difficult to reduce the size of the package 100.

Therefore, the present applicant provides a recess in the package, and stores other acceleration sensor chips other than the integrated circuit chip having the largest dimension in the recess, and the acceleration sensor chip etc. in which the integrated circuit chip is stored in the recess. A semiconductor acceleration sensor device arranged so as to be stacked is already proposed (see Patent Document 2).
JP-A-8-110351 JP 2003-344439 A

  However, in the latter conventional example, since a plurality of chips are stacked on the same surface side of the package, there is a problem that a space for forming a conductive pattern is reduced and the degree of freedom of wiring is lowered.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor acceleration sensor device capable of downsizing a package without reducing the degree of freedom of wiring, and a method for manufacturing the same.

  According to a first aspect of the present invention, in order to achieve the above object, an acceleration sensor chip that outputs an electrical signal corresponding to the magnitude and direction of an acceleration that is created and processed by processing a semiconductor substrate, and the acceleration sensor chip outputs In a semiconductor acceleration sensor device comprising an integrated circuit chip having a processing circuit for determining the magnitude and direction of acceleration acting by processing an electrical signal, and an acceleration sensor chip and a package on which the integrated circuit chip is mounted. Recesses are provided on both the front and back surfaces, and through holes are formed through the bottom surfaces of these recesses. An integrated circuit chip is mounted on the bottom surface of the recesses on the back side, and the acceleration sensor chip is changed from the recesses on the front side to the through holes. It is characterized by being inserted.

  According to the present invention, since the acceleration sensor chip and the integrated circuit chip are mounted so as to be stacked through the through holes from the front side and the back side of the package, compared to the conventional example in which a plurality of chips are stacked so as to be stacked on one side of the package. Thus, the package can be downsized without reducing the degree of freedom of wiring.

  The invention of claim 2 is characterized in that, in the invention of claim 1, the integrated circuit chip is flip-chip mounted on the bottom surface of the recess.

  According to the present invention, the package can be further downsized as compared with the case of wire bonding.

  The invention of claim 3 is characterized in that, in the invention of claim 1 or 2, a protrusion projecting in the axial direction of the through hole is provided around the entire circumference of the through hole in the bottom surface of the recess on the back surface side. And

  According to the present invention, when the adhesive is poured into the recess on the back side in order to securely fix the integrated circuit chip to the package, it is possible to prevent the adhesive from flowing into the through hole by the protrusion, and the acceleration sensor chip. And reliability related to the mounting of the integrated circuit chip is improved.

  The invention of claim 4 is characterized in that, in the invention of claim 1, 2 or 3, the bottom surface of the recess on the front surface side is formed in a mortar shape inclined toward the back surface side toward the through hole.

  According to this invention, the alignment accuracy when mounting the acceleration sensor chip is improved.

  According to a fifth aspect of the present invention, in any one of the first to fourth aspects of the invention, the acceleration sensor chip is flip-chip mounted on the integrated circuit chip in a state where a gap is left with respect to the mounting surface of the integrated circuit chip. To do.

  According to the present invention, the drive portion (weight portion) of the acceleration sensor chip does not hit the integrated circuit chip due to the clearance, and malfunction of the acceleration sensor chip can be avoided.

  According to a sixth aspect of the present invention, in the second aspect of the present invention, a plurality of projecting portions protruding in the axial direction of the through hole are provided around the through hole in the bottom surface of the recess on the back surface side, and the tip surface of each projecting portion is provided. The integrated circuit chip is flip-chip mounted.

  According to the present invention, a gap is secured between the bottom surface of the recess and the integrated circuit chip by the projecting portion, and workability when filling the sealing resin is improved.

  According to a seventh aspect of the present invention, in any one of the first to sixth aspects, the integrated circuit chip is fixed to the package with a sealing resin filled in the recess on the back surface side.

  According to the present invention, the integrated circuit chip is simultaneously sealed with the sealing resin, so that the process can be simplified and the cost can be reduced.

  The invention of claim 8 is a method of manufacturing the semiconductor acceleration sensor device according to claim 2, wherein the step of flip-chip mounting an integrated circuit chip on the bottom of the recess on the back of the package using an anisotropic conductive film; Sealing the recess on the back side with a sealing resin, and fixing the mounting surface of the acceleration sensor chip to which the non-conductive film is attached to the surface side of the anisotropic conductive film through the through hole. It is characterized by.

  The invention according to claim 9 is a method of manufacturing the semiconductor acceleration sensor device according to claim 2 or 3, wherein the step of flip-chip mounting the integrated circuit chip on the bottom of the recess on the back of the package by stud bump bonding, and the back side And a step of fixing the mounting surface of the acceleration sensor chip to which the non-conductive film is attached to the surface side of the anisotropic conductive film through a through hole. And

  A tenth aspect of the present invention is a method for manufacturing the semiconductor acceleration sensor device according to the second aspect, wherein the step of attaching an anisotropic conductive film to the bottom of the recess on the back surface of the package, and the surface side of the anisotropic conductive film And a step of flip-chip mounting the acceleration sensor chip and the integrated circuit chip on the back surface side, respectively, and a step of sealing the recess on the back surface side with a sealing resin.

  The invention according to claim 11 is a method of manufacturing the semiconductor acceleration sensor device according to claim 3, wherein the anisotropic conductive film is attached to the bottom of the recess on the back surface of the package, and the through hole is formed in the anisotropic conductive film. A step of penetrating a hole communicating with the substrate, a step of flip-chip mounting an acceleration sensor chip and an integrated circuit chip on the front surface side and the back surface side of the anisotropic conductive film, respectively, and a recess on the back surface side are sealed with a sealing resin. And a step of stopping.

  According to a twelfth aspect of the present invention, there is provided a method of manufacturing the semiconductor acceleration sensor device according to the fifth aspect, wherein stud bumps are formed on the pads of the integrated circuit chip and the movable portion of the acceleration sensor chip is mounted on the mounting surface of the integrated circuit chip. A step of attaching an anisotropic conductive film excluding a portion facing the substrate, a step of mounting the acceleration sensor chip on the mounting surface of the integrated circuit chip by stud bump bonding with the anisotropic conductive film sandwiched, and an acceleration sensor chip It has a step of mounting the mounted integrated circuit chip on the bottom surface of the recess on the back surface side using an anisotropic conductive film, and a step of sealing the recess on the back surface side with a sealing resin.

  A thirteenth aspect of the invention is a method of manufacturing the semiconductor acceleration sensor device according to the fourth aspect of the invention, in which an acceleration sensor chip is mounted on a bottom surface of a recess formed in a mortar shape and the acceleration sensor is formed by a sealing resin. The process of fixing the chip to the package, the process of connecting the pad of the acceleration sensor chip and the conductive pattern of the package by wire bonding, and the flip chip mounting of the integrated circuit chip on the bottom of the recess on the back of the package using an anisotropic conductive film And a step of sealing the recess on the back surface side with a sealing resin.

  According to the present invention, the acceleration sensor chip and the integrated circuit chip are mounted so as to be stacked through the through-holes from the front side and the back side of the package. Therefore, compared to the conventional example in which a plurality of chips are stacked on one side of the package. Thus, there is an effect that the package can be reduced in size without reducing the degree of freedom of wiring.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  Here, before describing individual embodiments, a method of manufacturing the package 10 in each embodiment will be briefly described. The package 10 is configured as a three-dimensional circuit molded substrate (MID substrate).

  First, an engineering plastic material or a ceramic material is injection molded into a desired shape to obtain an insulating base material (molded product). After forming a copper thin film on the surface of this molded product, the thin film at the contour portion of the necessary conductive pattern is removed by a laser beam. After the remaining thin film portion (conductive pattern portion) is subjected to electrolytic copper plating, the excess thin film portion is removed by soft etching. Finally, if the conductive pattern is electroplated in the order of nickel and gold, a molded product having the necessary conductive pattern formed on the surface, that is, the package 10 is completed. There are other methods such as a hot stamping method and a two-shot method as a method of manufacturing a three-dimensional circuit molded substrate. However, according to the above-described manufacturing method, a fine and complicated conductive pattern is formed as compared with other methods. There is an advantage that it can be formed and the degree of freedom in changing the conductive pattern and the molded product is high.

(Embodiment 1)
In this embodiment, as shown in FIGS. 1 and 2, the acceleration sensor chip 1 having substantially the same structure as the conventional example, and the magnitude and direction of the acceleration that acts by processing the electrical signal output from the acceleration sensor chip 1 An integrated circuit chip 2 having a processing circuit (including an amplifier and a temperature compensation circuit) for obtaining the acceleration sensor, and an acceleration sensor chip 1 and a package 10 on which the integrated circuit chip 2 is mounted.

  The package 10 is formed into a flat plate shape by the above-described manufacturing method, and recesses 11 and 12 are provided on the front surface and the back surface, respectively, and rectangular through holes 13 are formed on the bottom surfaces of the two recesses 11 and 12. A hollow structure is formed.

  The integrated circuit chip 2 is mounted so as to close the through hole 13 on the bottom surface of the recess 12 on the back surface side of the package 10, and a terminal (not shown) provided on the surface and the inner peripheral surface of the recess 12. A pad of a conductive pattern (not shown) formed on is electrically connected by a bonding wire 3. The integrated circuit chip 2 is sealed with a sealing resin 4 filled in the recess 12.

  The acceleration sensor chip 1 is inserted into the through hole 13 from the recess 11 on the surface side of the package 10, and is adhered and mounted on the surface of the integrated circuit chip 2 blocking the through hole 13. Are electrically connected to pads of conductive patterns (not shown) formed by the bonding wires 5. Further, a lid 14 formed in the shape of a flat plate of the same material as the package 10 is joined to the surface of the package 10, and the recess 11 on the surface side of the package 10 is sealed by the lid 14.

  As described above, the recesses 11 and 12 are provided on both the front and back surfaces of the package 10 and the through-holes 13 penetrating the bottom surfaces of the two recesses 11 and 12 are provided, so that the acceleration sensor chip 1 and the integrated circuit chip 2 are connected to the package 10. Since it is mounted so as to be stacked through the through-holes 13 from the front side and the back side, the degree of freedom of wiring (conductive pattern) is reduced as compared with the conventional example in which a plurality of chips are stacked on one side of the package 10. Therefore, the package 10 can be downsized.

(Embodiment 2)
Since the basic configuration of the present embodiment is the same as that of the first embodiment, the same components are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 3, bumps 6 such as gold are provided on the terminals of the integrated circuit chip 2, and the integrated circuit chip 2 is flip-chip mounted on the bottom surface of the recess 12 on the back surface side of the package 10.

  Thus, since the integrated circuit chip 2 is flip-chip mounted, the package 10 is further reduced in size (lower profile) and reduced in noise resistance compared to the case of wire bonding as in the first embodiment. Can be improved.

(Embodiment 3)
Since the basic configuration of this embodiment is the same as that of the second embodiment, common components are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIGS. 4 and 5, the present embodiment projects in the axial direction of the through hole 13 (downward in FIG. 4) around the through hole 13 in the bottom surface of the recess 12 on the back surface side of the package 10. A feature is that the protrusion 15 is provided over the entire circumference.

  When the integrated circuit chip 2 is flip-chip mounted, an adhesive (underfill resin) 7 is filled between the integrated circuit chip 2 and the bottom surface of the recess 12 in order to ensure the bonding strength between the integrated circuit chip 2 and the package 10. There is a need to. When the adhesive 7 is poured into the recess 12, the adhesive 7 is prevented from flowing into the through-hole 13 by the protrusion 15 protruding around the through-hole 13, and flows into the through-hole 13. The adhesive 7 can prevent the reliability of the bonding strength between the acceleration sensor chip 1 and the integrated circuit chip 2 from being impaired.

(Embodiment 4)
Since the basic configuration of the present embodiment is the same as that of the second embodiment, the same components are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIGS. 6 and 7, this embodiment is characterized in that the bottom surface of the recess 11 on the front surface side of the package 10 is formed in a mortar shape that is inclined toward the back surface toward the through hole 13. .

  Thus, since the bottom surface of the recess 11 is formed in a mortar shape, mounting position accuracy (alignment accuracy) when mounting the acceleration sensor chip 1 on the bottom surface of the recess 11 can be improved.

(Embodiment 5)
Since the basic configuration of the present embodiment is the same as that of the second embodiment, the same components are denoted by the same reference numerals and description thereof is omitted.

  The present embodiment is characterized in that the acceleration sensor chip 1 is flip-chip mounted on the integrated circuit chip 2 with a gap from the mounting surface of the integrated circuit chip 2.

  As shown in FIG. 8, a terminal (not shown) to be electrically connected to the acceleration sensor chip 1 is provided on the surface facing the through hole 13 of the integrated circuit chip 2. A bump 16 such as gold is provided on this terminal, and the acceleration sensor chip 1 inserted through the through hole 13 is flip-chip mounted on the integrated circuit chip 2 via the bump 16. Here, a gap corresponding to the thickness of the bump 16 is generated between the acceleration sensor chip 1 and the integrated circuit chip 2.

  Thus, since the acceleration sensor chip 1 is flip-chip mounted on the integrated circuit chip 2, the package 10 can be further reduced in size (reduced height) and the wiring length can be reduced as compared with the case of wire bonding as in the second embodiment. The noise resistance can be improved by the reduction. Further, since there is a gap between the acceleration sensor chip 1 and the integrated circuit chip 2, the drive portion (weight portion) of the acceleration sensor chip 1 does not hit the integrated circuit chip 2, and the acceleration sensor chip 1 malfunctions. There is an advantage that can be avoided.

  If the integrated circuit chip 2 is fixed to the package 10 with the sealing resin 4 filled in the recess 12 on the back surface side, the sealing circuit 4 seals the integrated circuit chip 2 to the package 10 at the same time. Therefore, there is an advantage that the process can be simplified and the cost can be reduced.

(Embodiment 6)
Since the basic configuration of this embodiment is the same as that of the fifth embodiment, the same components are denoted by the same reference numerals and description thereof is omitted.

  In the present embodiment, as shown in FIGS. 9 and 10, a plurality of projecting portions 17 projecting in the axial direction of the through hole 13 are provided around the through hole 13 in the bottom surface of the recess 12 on the back surface side of the package 10. There is a feature in that the integrated circuit chip 2 is flip-chip mounted on the front end surface of each protrusion 17.

  As shown in FIG. 10, a total of eight projecting parts 17 are provided on the bottom surface of the recess 12 so as to surround the through hole 13, and the side surface of each projecting part 17, the inner peripheral surface of the recess 12, and the package A conductive pattern 18 is formed on the back surface of 10. And bumps, such as gold | metal | money, are provided in the terminal (not shown) of the integrated circuit chip 2, and the conductive pattern 18 and a terminal are electrically connected by flip-chip mounting the integrated circuit chip 2 on the front end surface of the projecting part 17. It is connected to the. The acceleration sensor chip 1 is flip-chip mounted on the integrated circuit chip 2 via an anisotropic conductive film (Anisotropic Conductive Film) 19.

  Thus, a gap is secured between the bottom surface of the recess 12 and the integrated circuit chip 2 by flip-chip mounting the integrated circuit chip 2 on the tip surfaces of the plurality of projecting portions 17 provided around the through hole 13. Therefore, workability at the time of filling the sealing resin 4 into the recess 12 is improved.

  Hereinafter, the seventh to twelfth embodiments are embodiments of the invention of the manufacturing method for manufacturing the semiconductor acceleration sensor device according to the present invention.

(Embodiment 7)
The present embodiment is a manufacturing method for manufacturing the semiconductor acceleration sensor device of the second embodiment. Hereinafter, the manufacturing method of this embodiment will be described with reference to the process flow chart of FIG. However, the numerical values shown below are merely examples, and are not intended to limit the numerical values illustrated.

First, the anisotropic conductive film (ACF) 21 is attached to the bottom surface of the back-side recess 12 of the package 10, and the attached anisotropic conductive film 21 is heated and temporarily cured (see FIG. 11A). ). Here, the back surface of the package 10 is formed in a 6 mm × 6 mm square, and the opening size of the through hole 13 provided in the bottom surfaces of the recesses 11 and 12 is 1.8 mm × 1.8 mm. A conductive pattern 20 (copper film thickness: 15 μm, nickel film thickness: 10 μm, gold film thickness: 0.3 μm) is formed on both the front and back surfaces of the package 10 and the inner peripheral surfaces of the recesses 11 and 12. ing. Here, the film thickness of the anisotropic conductive film 21 is 50 μm, the pressure at the time of attachment is 100 g / mm ² , and the heating temperature is 100 ° C.

Next, the integrated circuit chip 2 in which stud bumps 22 (material: gold, diameter 100 μm, height 100 μm) are formed on the pad surface is stored in an aligned state in the recess 12 on the back surface, and the bottom surface of the recess 12 is electrically conductive. The stud bump 22 is brought into contact with the pattern 20. Then, as shown in FIG. 11B, the anisotropic conductive film 21 is applied to the integrated circuit chip 2 for about 10 seconds while applying a load (100 g / mm ² per stud bump 22) in the direction of the arrow in the figure. This is cured by heating (210 ° C.) for a short time. As the anisotropic conductive film 21 is fully cured in this way, the contact state between the stud bump 22 and the conductive pattern 20 is maintained, and the joint between the integrated circuit chip 2 and the conductive pattern 20 becomes conductive. That is, the integrated circuit chip 2 is flip-chip mounted (ACF mounted) on the bottom surface of the recess 12 on the back surface of the package 10 using the anisotropic conductive film 21. Then, the recess 12 is filled with the sealing resin 4 so as to cover the integrated circuit chip 2 and the anisotropic conductive film 21, and the sealing resin 4 is cured by heating to 150 ° C. for 30 minutes (FIG. 11 ( c)).

  Then, a non-conductive film (NonConductiveFilm) 23 is attached to the mounting surface (surface on which no pad is formed) of the acceleration sensor chip 1, and the acceleration sensor chip 1 is inserted into the through hole 13 from the recess 11 on the surface of the package 10. The acceleration sensor chip 1 is fixed by mounting the nonconductive film 23 on the anisotropic conductive film 21 facing the through-hole 13 and curing the nonconductive film 23 by heating to 150 ° C. for 30 minutes. (See FIG. 11D). Finally, if the pads of the acceleration sensor chip 1 and the conductive pattern 20 provided in the recess 11 are connected (wire bonding) with a gold wire 24 (diameter: 25 μm), a semiconductor acceleration sensor device is completed (FIG. 5). 11 (e)).

(Embodiment 8)
The present embodiment is a manufacturing method for manufacturing the semiconductor acceleration sensor device of the third embodiment. Hereinafter, the manufacturing method of this embodiment will be described with reference to the process flow chart of FIG. However, the same components as those in the seventh embodiment are denoted by the same reference numerals and description thereof is omitted. Moreover, the numerical value shown below is an example, Comprising: It is not the main point limited to the illustrated numerical value.

First, a stud bump 22 (material: gold, diameter 100 μm, height 100 μm) is formed on the pad surface of the integrated circuit chip 2, and a conductive adhesive 25 is applied to the tip of the stud bump 22. 2 is stored in an aligned state in the recess 12 on the back surface, and the stud bump 22 is brought into contact with the conductive pattern 20 on the bottom surface of the recess 12 (see FIG. 12A). Then, the conductive adhesive 25 is cured by heating (120 ° C.) for 2 hours while applying a load of 45 g / mm ² per stud bump 22 to the integrated circuit chip 2. Thus, the conductive adhesive 25 is fully cured, so that the contact state between the stud bump 22 and the conductive pattern 20 is maintained, and the joint between the integrated circuit chip 2 and the conductive pattern 20 is conducted. Then, the recess 12 is filled with a sealing resin 4 that also serves as an underfill resin so as to cover the integrated circuit chip 2, and the sealing resin 4 is cured by irradiating ultraviolet rays from the recess 11 side of the surface (FIG. 12 (b)). Here, when the sealing resin 4 is poured into the recess 12, the sealing resin 4 is prevented from flowing into the through-hole 13 by the protrusion 15 (height: 50 μm) provided around the through-hole 13. doing.

  Then, a nonconductive film 23 is attached to the mounting surface of the acceleration sensor chip 1, the acceleration sensor chip 1 is inserted into the through hole 13 from the recess 11 on the surface of the package 10, and the nonconductive film 23 is inserted into the through hole 13. The acceleration sensor chip 1 is fixed by mounting it on the opposing integrated circuit chip 2 and heating it to 150 ° C. for 30 minutes to cure the nonconductive film 23 (see FIG. 12C). Finally, if the pads of the acceleration sensor chip 1 and the conductive pattern 20 provided in the recess 11 are connected (wire bonding) with a gold wire 24 (diameter: 25 μm), a semiconductor acceleration sensor device is completed (FIG. 5). 12 (d)).

(Embodiment 9)
The present embodiment is a manufacturing method for manufacturing the semiconductor acceleration sensor device of the second embodiment. Hereinafter, the manufacturing method of this embodiment will be described with reference to the process flow diagram of FIG. However, the same components as those in the seventh embodiment are denoted by the same reference numerals and description thereof is omitted. Moreover, the numerical value shown below is an example, Comprising: It is not the main point limited to the illustrated numerical value.

First, the anisotropic conductive film 21 is attached to the bottom surface of the back surface side recess 12 of the package 10, and the attached anisotropic conductive film 21 is heated and temporarily cured (see FIG. 13A). Next, the integrated circuit chip 2 having the stud bumps 22 formed on the pad surface is accommodated in the recess 12 on the back surface, and the stud bumps 22 are brought into contact with the conductive pattern 20 on the bottom surface of the recess 12. Further, the acceleration sensor chip 1 is inserted into the through hole 13 from the recess 11 on the surface of the package 10 and pressed onto the anisotropic conductive film 21 facing the through hole 13 (pressing load: 100 g / mm ² ). Then, as shown in FIG. 13B, the anisotropic conductive film 21 is heated (210 ° C.) for about 10 seconds while applying a load (100 g / mm ² per stud bump 22) to the integrated circuit chip 2. Then, the main body is cured and the acceleration sensor chip 1 and the integrated circuit chip 2 are fixed simultaneously. Then, the recess 12 is filled with the sealing resin 4 so as to cover the integrated circuit chip 2 and the anisotropic conductive film 21, and the sealing resin 4 is cured by heating to 150 ° C. for 30 minutes (FIG. 13 ( c)). Finally, if the pads of the acceleration sensor chip 1 and the conductive pattern 20 provided in the recess 11 are connected (wire bonding) by the gold wire 24, the semiconductor acceleration sensor device is completed (see FIG. 13D).

(Embodiment 10)
The present embodiment is a manufacturing method for manufacturing the semiconductor acceleration sensor device of the third embodiment. Hereinafter, the manufacturing method of this embodiment will be described with reference to the process flow diagram of FIG. However, the same components as those in the seventh embodiment are denoted by the same reference numerals and description thereof is omitted. Moreover, the numerical value shown below is an example, Comprising: It is not the main point limited to the illustrated numerical value.

  First, the stud bump 22 is formed on the pad surface of the integrated circuit chip 2, the nonconductive film 23 is attached to the central portion on the same surface, and the acceleration sensor chip 1 is mounted on the nonconductive film 23. Then, the integrated circuit chip 2 and the acceleration sensor chip 1 are coupled by heating and curing the non-conductive film 23 (see FIG. 14A).

  Next, the anisotropic conductive film 21 is attached to the bottom surface of the back surface side recess 12 of the package 10, and the attached anisotropic conductive film 21 is heated and temporarily cured (see FIG. 14B). Further, a portion covering the through hole 13 of the anisotropic conductive film 21 is punched with a pin having the same size as the inner diameter of the through hole 13 so that the opening of the through hole 13 is exposed to the recess 12 side (see FIG. 14C). ). At this time, since the pin is guided by the protrusion 15 protruding around the through-hole 13, it is easy to punch.

  Then, the acceleration sensor chip 1 is inserted into the through-hole 13 from the recess 12 on the back surface side, and the stud bump 22 provided on the integrated circuit chip 2 is brought into contact with the conductive pattern 20 on the bottom surface of the recess 12 to conduct anisotropic conduction. The film 21 is heated to be fully cured (see FIG. 14D). Finally, if the pads of the acceleration sensor chip 1 and the conductive pattern 20 provided in the recess 11 are connected (wire bonding) by the gold wire 24, the semiconductor acceleration sensor device is completed (see FIG. 14E).

(Embodiment 11)
The present embodiment is a manufacturing method for manufacturing the semiconductor acceleration sensor device of the fifth embodiment. Hereinafter, the manufacturing method of this embodiment will be described with reference to the process flow diagram of FIG. However, the same components as those in the seventh embodiment are denoted by the same reference numerals and description thereof is omitted. Moreover, the numerical value shown below is an example, Comprising: It is not the main point limited to the illustrated numerical value.

  First, the stud bump 22 is formed on the surface of the pad (not shown) of the integrated circuit chip 2 connected to the conductive pattern 20, and the surface of the pad 1a connected to the pad 2a of the integrated circuit chip 2 of the acceleration sensor chip 1. Also, stud bumps 26 are formed. Then, an anisotropic conductive film 27 is attached to the center of the surface of the integrated circuit chip 2 where the pads 2a are provided, the acceleration sensor chip 1 is mounted thereon, and the anisotropic conductive film 27 is heated. The integrated circuit chip 2 and the acceleration sensor chip 1 are coupled by being cured (see FIG. 15A). At this time, as shown in FIG. 16, the pad 1 a of the acceleration sensor chip 1 and the pad 2 a of the integrated circuit chip 2 are joined via the bumps 26. Further, the surface of the acceleration sensor chip 1 on which the pad 1a is provided has a drive portion (weight portion) 1b, but the anisotropic conductive film 27 is not disposed around the drive portion 1b, and the acceleration sensor. A gap corresponding to the thickness of the bump 26 is provided between the chip 1 and the integrated circuit chip 2. This gap prevents the drive portion (weight portion) 1b of the acceleration sensor chip 1 from hitting the integrated circuit chip 2 to avoid malfunction of the acceleration sensor chip 1.

  Next, the anisotropic conductive film 21 is attached to the bottom surface of the back surface side recess 12 of the package 10, the attached anisotropic conductive film 21 is heated and temporarily cured, and the inner diameter of the through hole 13 A portion covering the through hole 13 of the anisotropic conductive film 21 is punched out with a pin having substantially the same size, so that the opening of the through hole 13 is exposed to the recess 12 side. Then, the acceleration sensor chip 1 is inserted into the through-hole 13 from the recess 12 on the back surface side, and the stud bump 22 provided on the integrated circuit chip 2 is brought into contact with the conductive pattern 20 on the bottom surface of the recess 12 to conduct anisotropic conduction. The film 21 is heated to be fully cured (see FIG. 15B). Finally, the recess 12 is filled with the sealing resin 4 so as to cover the integrated circuit chip 2 and the anisotropic conductive film 21 and heated to 150 ° C. for 30 minutes to cure the sealing resin 4. The sensor device is completed (see FIG. 15C).

Embodiment 12
The present embodiment is a manufacturing method for manufacturing the semiconductor acceleration sensor device of the fourth embodiment. Hereinafter, the manufacturing method of this embodiment will be described with reference to the process flow diagram of FIG. However, the same components as those in the seventh embodiment are denoted by the same reference numerals and description thereof is omitted. Moreover, the numerical value shown below is an example, Comprising: It is not the main point limited to the illustrated numerical value.

  First, the acceleration sensor chip 1 is mounted on the bottom surface of the recess 11 of the package 10 formed in a mortar shape, and the acceleration sensor chip 1 is positioned (aligned) by being sucked through the through hole 13 from the recess 12 side of the back surface. (See FIG. 17 (a)). In this state, the sealing resin 28 is applied to the bottom surface of the recess 11 and cured to fix the acceleration sensor chip 1 to the package 10 (see FIG. 17B). Further, the pads of the acceleration sensor chip 1 and the conductive pattern 20 provided in the recess 11 are connected by a gold wire 24 (see FIG. 17C).

  Next, the anisotropic conductive film 21 is attached to the bottom surface of the back surface side recess 12 of the package 10, and the attached anisotropic conductive film 21 is heated and temporarily cured, and then the stud bump 22 is formed on the pad surface. The formed integrated circuit chip 2 is stored in an aligned state in the recess 12 on the back surface, and anisotropic conductive while applying a load with the stud bump 22 in contact with the conductive pattern 20 on the bottom surface of the recess 12. The film 21 is heated (210 ° C.) for about 10 seconds to be fully cured. Then, if the sealing resin 4 is filled in the recess 12 so as to cover the integrated circuit chip 2 and the anisotropic conductive film 21 and heated to 150 ° C. for 30 minutes to cure the sealing resin 4, the semiconductor The acceleration sensor device is completed (see FIG. 17D).

Embodiment 1 is shown, (a) is a front perspective view, (b) is a rear perspective view. It is sectional drawing same as the above. 6 is a cross-sectional view of a second embodiment. FIG. FIG. 6 is a cross-sectional view of a third embodiment. It is the partially broken perspective view of the package in the same. FIG. 6 is a cross-sectional view of a fourth embodiment. It is the partially broken perspective view of the package in the same. FIG. 6 is a cross-sectional view of a fifth embodiment. It is sectional drawing of Embodiment 6. FIG. It is a back surface top view of the package in the same as the above. FIG. 10 is a process flow diagram illustrating a manufacturing method according to Embodiment 7. It is a process flow figure explaining the manufacturing method of Embodiment 8. It is a process flow figure explaining the manufacturing method of Embodiment 9. It is a process flow figure explaining the manufacturing method of Embodiment 10. It is a process flow figure explaining the manufacturing method of Embodiment 11. It is a top view of the principal part in the same as the above. It is a process flow figure explaining the manufacturing method of Embodiment 12. A prior art example is shown, (a) is a plan view and (b) is a cross-sectional view.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Acceleration sensor chip 2 Integrated circuit chip 10 Package 11 Recess 12 Recess 13 Through-hole

Claims (13)

  An acceleration sensor chip that outputs an electrical signal according to the magnitude and direction of an acceleration that is created and processed by processing a semiconductor substrate, and the magnitude and direction of an acceleration that acts by processing the electrical signal output by the acceleration sensor chip. In a semiconductor acceleration sensor device comprising an integrated circuit chip having a processing circuit for obtaining, an acceleration sensor chip and a package for mounting the integrated circuit chip, recesses are provided on both the front and back surfaces of the package, and the bottom surfaces of these recesses are provided. A semiconductor acceleration sensor device, wherein a through hole is formed, an integrated circuit chip is mounted on a bottom surface of a recess on the back surface side, and the acceleration sensor chip is inserted into the through hole from the recess on the front surface side.   2. The semiconductor acceleration sensor device according to claim 1, wherein the integrated circuit chip is flip-chip mounted on the bottom surface of the recess.   3. The semiconductor acceleration sensor device according to claim 1, wherein a protrusion projecting in the axial direction of the through hole is provided around the entire circumference of the through hole in the bottom surface of the recess on the back surface side.   4. The semiconductor acceleration sensor device according to claim 1, wherein the bottom surface of the recess on the front surface side is formed in a mortar shape inclined toward the back surface side toward the through hole.   5. The semiconductor acceleration sensor device according to claim 1, wherein the acceleration sensor chip is flip-chip mounted on the integrated circuit chip in a state where a gap is left with respect to the mounting surface of the integrated circuit chip.   A plurality of projecting portions protruding in the axial direction of the through hole are provided around the through hole in the bottom surface of the recess on the back surface side, and an integrated circuit chip is flip-chip mounted on the tip surface of each projecting portion. Item 3. A semiconductor acceleration sensor device according to Item 2.   The semiconductor acceleration sensor device according to claim 1, wherein the integrated circuit chip is fixed to the package with a sealing resin filled in a recess on the back surface side.   3. A method of manufacturing a semiconductor acceleration sensor device according to claim 2, wherein a step of flip-chip mounting an integrated circuit chip on the bottom of the recess on the back surface of the package using an anisotropic conductive film, and sealing the recess on the back surface side. A semiconductor acceleration sensor comprising: a step of sealing with a stop resin; and a step of fixing the mounting surface of the acceleration sensor chip to which the nonconductive film is attached to the surface side of the anisotropic conductive film through a through hole Device manufacturing method.   4. A method of manufacturing a semiconductor acceleration sensor device according to claim 2, wherein a step of flip-chip mounting an integrated circuit chip on the bottom of the recess on the back surface of the package by stud bump bonding, and a sealing resin for the recess on the back surface side And a step of fixing the mounting surface of the acceleration sensor chip to which the non-conductive film is attached to the surface side of the anisotropic conductive film through the through hole. Production method.   3. A method of manufacturing a semiconductor acceleration sensor device according to claim 2, wherein a step of attaching an anisotropic conductive film to the bottom surface of the recess on the back surface of the package, and an acceleration sensor on each of the front surface side and the back surface side of the anisotropic conductive film. A method of manufacturing a semiconductor acceleration sensor device, comprising: a step of flip-chip mounting a chip and an integrated circuit chip; and a step of sealing a recess on a back surface side with a sealing resin.   4. A method of manufacturing a semiconductor acceleration sensor device according to claim 3, wherein a step of attaching an anisotropic conductive film to the bottom surface of the recess on the back surface of the package and a hole communicating with the through hole are provided in the anisotropic conductive film. A step of flip-chip mounting the acceleration sensor chip and the integrated circuit chip on the front surface side and the back surface side of the anisotropic conductive film, respectively, and a step of sealing the recess on the back surface side with a sealing resin. A method for manufacturing a semiconductor acceleration sensor device.   6. A method of manufacturing a semiconductor acceleration sensor device according to claim 5, wherein stud bumps are formed on the pads of the integrated circuit chip, and a portion of the mounting surface of the integrated circuit chip that faces the movable portion of the acceleration sensor chip is excluded. The step of attaching the anisotropic conductive film, the step of mounting the acceleration sensor chip on the mounting surface of the integrated circuit chip by stud bump bonding across the anisotropic conductive film, and the integrated circuit chip on which the acceleration sensor chip is mounted are different. A method of manufacturing a semiconductor acceleration sensor device, comprising: a step of mounting on a bottom surface of a recess on the back surface side using an isotropic conductive film; and a step of sealing the recess on the back surface side with a sealing resin.   5. A method of manufacturing a semiconductor acceleration sensor device according to claim 4, wherein the acceleration sensor chip is mounted on the bottom surface of the recess formed in a mortar shape and the acceleration sensor chip is fixed to the package with a sealing resin. A step of connecting the acceleration sensor chip pad and the conductive pattern of the package by wire bonding, a step of flip-chip mounting the integrated circuit chip on the bottom of the recess using the anisotropic conductive film, And a step of sealing the recess with a sealing resin.

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