JP4049176B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor device including a semiconductor sensor chip such as a sound pressure sensor chip and a pressure sensor chip, and a manufacturing method thereof.

  Conventionally, a semiconductor device manufactured using a silicon semiconductor, such as a pressure sensor or a silicon microphone, has a semiconductor sensor chip that is formed in a substantially rectangular plate shape and has a recessed portion that is recessed from the front surface toward the back surface. And the semiconductor sensor chip is mounted on a printed circuit board. In this semiconductor sensor chip, the thinned portion by the concave portion is used as a diaphragm (movable electrode). When pressure such as sound pressure is applied, the diaphragm is displaced or distorted. For example, a bridge resistor circuit formed on the diaphragm This displacement or strain is regarded as a change in electrical resistance, and pressure can be detected based on the change in electrical resistance corresponding to the magnitude of displacement or strain (hereinafter referred to as displacement).

  In general, this type of semiconductor device has a feature that accuracy and reproducibility are good enough that the displacement of the diaphragm is used in a minute range and no fluid adheres to the diaphragm. For this reason, some semiconductor devices are provided with an amplifier such as an operational amplifier that amplifies an electric signal output by a minute displacement of the diaphragm, and this amplifier is mounted on a printed circuit board together with a semiconductor sensor chip. In addition, a semiconductor sensor chip and an amplifier are packaged by covering the surface of the printed circuit board with a cover (cover) so that they are arranged in the same space, and these are protected from the external environment (for example, patent documents) 1).

In such a semiconductor device, a cover for housing the semiconductor sensor chip and the amplifier in the same space is provided with an opening for communicating the space with the outside, and for example, sound pressure generated outside through the opening. It is possible to guide the pressure that fluctuates in the space to reach the semiconductor sensor chip. In addition, a recessed portion that is recessed from the front surface to the back surface of the printed circuit board is provided in a portion of the printed circuit board that is located immediately below the diaphragm, and a space is formed immediately below the diaphragm in this recessed portion, so that the pressure reached by the diaphragm It is possible to vibrate (displace) correctly with a deformation amount according to the above.
JP-T-2004-537182

  However, since the semiconductor device described above is configured by mounting the semiconductor sensor chip on a printed circuit board in which a concave portion has been formed in advance, for example, when the size of the concave portion needs to be changed according to the characteristics of the semiconductor sensor chip, The manufacture of the substrate becomes troublesome. In such a case, there is a problem that the manufacturing efficiency is lowered, and the manufacturing cost of the semiconductor device and thus the cost of the semiconductor device is increased.

  Furthermore, on the same surface of the printed circuit board on which the semiconductor sensor chip and the amplifier are installed, a cover that covers these while forming a space above the semiconductor sensor chip and the amplifier is installed. There has been a problem that the semiconductor sensor chip, the amplifier, or the wire that electrically connects each of them may be damaged and damaged. In addition, since the front end of the cover is fixed to the printed circuit board, for example, only with an adhesive, the cover may come off when an impact or the like is applied. As a result, there is a problem that the reliability of the semiconductor device is lowered.

  In view of the above circumstances, an object of the present invention is to provide a semiconductor device capable of improving manufacturing efficiency and reducing costs while improving durability and a manufacturing method thereof.

  In order to achieve the above object, the present invention provides the following means.

The semiconductor device of the present invention is a semiconductor device comprising a semiconductor sensor chip diaphragm is formed for detecting the pressure corresponding to the deformation amount is deformed by pressure applied, the semiconductor sensor to the upper surface is formed in a plate shape A stage portion to which the chip is fixed, a suspension lead that is connected to one end of the stage portion and supports it in a lifted state, a lead having one end disposed in the vicinity of the stage portion, and the other end of the lead connected to the outside And a first sealing resin layer that seals the stage portion, the suspension lead, and the lead with the upper portion of the stage portion open, and the semiconductor sensor mounted on the first sealing resin layer A lid that covers the chip while forming a space above the chip; and a second sealing resin layer that covers the outer surface of the lid and is fixed to the first sealing resin layer. The through hole is formed opposite to the diaphragm of the semiconductor sensor chip, and the first sealing resin layer is communicated with the through hole toward the lower surface of the first sealing resin layer. An extending recess is formed, and the lid is formed with an opening that communicates the space with the outside.

Further, the semiconductor device of the present invention is a semiconductor device comprising a semiconductor sensor chip diaphragm is formed for detecting the pressure corresponding to the deformation amount is deformed by pressure applied, the the upper surface is formed in a plate shape A stage portion to which the semiconductor sensor chip is fixed, a suspension lead that is connected to the stage portion and supported in a lifted state, a lead having one end disposed in the vicinity of the stage portion, and the other end of the lead And the first sealing resin layer that seals the stage portion, the suspension lead, and the lead with the upper portion of the stage portion opened, and the first sealing resin layer that is placed on the first sealing resin layer. A lid that covers the semiconductor sensor chip while forming a sealed space above the semiconductor sensor chip, and a second sealing resin layer that covers the outer surface of the lid and is fixed to the first sealing resin layer A through hole is formed in the stage portion so as to face the diaphragm of the semiconductor sensor chip, and the first sealing resin layer is connected to the first sealing resin layer while communicating with the through hole. A hole is formed in the lower surface.

  Furthermore, in the semiconductor device according to the present invention, it is preferable that the suspension lead is provided with a bent portion that forms a surface that is bent and disposed above the stage portion.

  In the semiconductor device of the present invention, it is more preferable that the stage portion is provided with a hanging portion extending from a side end to the lower surface of the first sealing resin layer.

  In the semiconductor device of the present invention, it is more desirable that a conductive layer is formed on the inner surface of the lid.

In the semiconductor device of the present invention, the lead is provided with a bent portion between the one end and the other end, and an upper surface from the one end to the bent portion is exposed to the space. Is desirable.
Furthermore, in the semiconductor device of the present invention, the semiconductor sensor chip may be a sound pressure sensor chip that detects sound pressure.

A method of manufacturing a semiconductor device according to the present invention is a method of manufacturing a semiconductor device including a semiconductor sensor chip formed with a diaphragm that is deformed by an applied pressure and detects the pressure according to the amount of deformation. Preparing a lead frame comprising a plate-like stage portion, a suspension lead having one end connected to the stage portion and supporting the stage portion in a lifted state, and a lead having one end disposed in the vicinity of the stage portion; The lead frame is clamped using the pair of first molds provided with the protrusions on the mold while the protrusions are inserted into the through holes, and the inside of the cavities of the pair of first molds. A first sealing resin layer that seals the stage portion, the suspension lead, and the lead while defining a concave portion that communicates with the through-hole by the projection and that is recessed. In this stage, the semiconductor sensor chip is fixed to the stage portion with the diaphragm facing the through hole, and the semiconductor sensor chip and the lead exposed on the upper surface of the first sealing resin layer are electrically connected. After connecting to the semiconductor sensor chip, the lid provided with an opening that covers the semiconductor sensor chip while forming a space and communicates the space with the outside is placed on the first sealing resin layer, The first sealing resin layer and the lid are integrally held using a pair of second molds, and the mold is clamped, and the second resin is filled into the cavities of the pair of second molds. Then, a second sealing resin layer that covers the outer surface of the lid and is fixed to the first sealing resin layer is formed while maintaining an external communication state with the space.

The semiconductor device manufacturing method of the present invention is a method for manufacturing a semiconductor device including a semiconductor sensor chip formed with a diaphragm that is deformed by an applied pressure and detects the pressure according to the amount of deformation. A lead frame comprising: a plate-like stage portion including: a suspension lead that has one end connected to the stage portion to support the stage portion in a lifted state; and a lead having one end disposed in the vicinity of the stage portion. The lead frame is clamped using the pair of first molds provided with the projections on one mold while the projections are inserted into the through holes, and the molds of the pair of first molds are clamped. The tee is filled with the first resin, and the projecting portion defines a hole that communicates with the through hole and opens to the outside, and seals the stage portion, the suspension lead, and the lead. In a stage where one sealing resin layer is formed, the semiconductor sensor chip is fixed to the stage portion while the diaphragm is opposed to the through hole, and is exposed on the upper surfaces of the semiconductor sensor chip and the first sealing resin layer. After electrically connecting the leads, a lid that covers the semiconductor sensor chip while forming a sealed space is placed on the first sealing resin layer. The first sealing resin layer and the lid are integrally held using two molds, and the mold is clamped, and the second resin is filled into the cavities of the pair of second molds to thereby form the lid A second sealing resin layer that covers the outer surface of the body and is fixed to the first sealing resin layer is formed.

  Further, in the method of manufacturing a semiconductor device according to the present invention, at the stage of preparing the lead frame, the suspension lead is formed with a bent portion having one surface arranged above the stage portion while being bent. It is desirable.

  In the method of manufacturing a semiconductor device according to the present invention, when the lead frame is prepared, a hanging portion extending from the side end to the lower surface of the first sealing resin layer is formed on the stage portion. Is more desirable.

  Furthermore, in the method for manufacturing a semiconductor device according to the present invention, a conductive layer may be formed in advance on the inner surface of the lid placed on the first sealing resin layer.

  In the method of manufacturing a semiconductor device according to the present invention, it is preferable that a bent portion is formed between the one end of the lead and the other end when the lead frame is prepared.

  According to the semiconductor device and the manufacturing method thereof of the present invention, the through hole of the stage portion and the concave portion formed in the first sealing resin layer communicating with the through hole of the stage portion are provided on the other side with the diaphragm interposed therebetween. In the case where a lid body that includes an opening and defines a space communicating with the outside is provided, for example, pressure that fluctuates outside can be guided to the space via the opening and can reach the diaphragm. In addition, when the diaphragm is deformed by this pressure, the diaphragm can be vibrated (displaced) correctly with a deformation amount proportional to the applied pressure by the through hole and the concave portion facing the diaphragm.

  That is, the stage portion is supported in a lifted state by the suspension leads, whereby the thickness of the first sealing resin layer can be increased, and the protrusion of the first mold is formed when the first sealing resin layer is formed. Can be formed with a large capacity, so that the pressure change in the sealed space between the through hole and the recess caused by the vibration of the diaphragm can be suppressed, and the deformation of the diaphragm is hindered. Can be prevented. Accordingly, the diaphragm can be vibrated correctly with a deformation amount corresponding to the applied pressure, and the pressure detected by the semiconductor device can be made accurate.

  In addition, since the semiconductor device and the manufacturing method thereof according to the present invention are manufactured using a lead frame, for example, it is necessary to change the size of the sealed space defined by the through hole and the recess according to the characteristics of the semiconductor sensor chip. In addition, it is possible to cope with the problem by simply changing the size of the protrusion of the first mold, and it is possible to easily respond to the size change as compared with the case using the conventional printed circuit board. Furthermore, since it is manufactured using a lead frame, it is considered to be superior in mass productivity as compared with the one using a printed circuit board, and thereby, the manufacturing efficiency of the semiconductor device is reduced without causing a decrease in manufacturing efficiency. The cost of the semiconductor device can be reduced.

  On the other hand, a through hole in the stage portion and a hole portion that opens to the lower surface of the first sealing resin layer are provided on one side of the diaphragm, and a sealed space is defined on the other side. When a lid body is provided, for example, pressure that fluctuates outside can be made to reach the diaphragm through the hole, and when the diaphragm is deformed by this pressure, the lid body defines the pressure. The space formed enables the diaphragm to vibrate (displace) correctly with a deformation amount proportional to the applied pressure.

  That is, since the capacity of the space in the sealed state can be increased according to the size and shape of the lid, the pressure change in the space caused by the vibration of the diaphragm can be suppressed, and the deformation of the diaphragm is hindered. Can be prevented. Accordingly, the diaphragm can be vibrated correctly with a deformation amount corresponding to the applied pressure, and the pressure detected by the semiconductor device can be made accurate.

  Moreover, in the semiconductor device and the manufacturing method thereof according to the present invention, the semiconductor device is covered with the resin of the first sealing resin layer and the second sealing resin layer so that the semiconductor device is strong. Compared with what constitutes the outline of the device, its durability can be greatly improved. For example, there is no problem such as a lid being removed due to an impact or the like, and a highly reliable semiconductor device It is possible to.

  Furthermore, in the semiconductor device and the manufacturing method thereof according to the present invention, the bent lead having a surface disposed above the stage portion is formed on the suspension lead so that the lid is placed on the surface portion. This prevents the lid from coming into contact with, for example, the semiconductor sensor chip or the wire that electrically connects the lead and the semiconductor sensor chip when the lid is installed. Thus, the lid can be easily installed.

  Further, in the semiconductor device and the manufacturing method thereof according to the present invention, the stage portion is provided with the hanging portion, so that the tip of the hanging portion is brought into contact with the first mold when the first sealing resin layer is formed. The mold can be clamped, and the clamped stage part can be reliably held in the lifted state together with the suspension lead. Therefore, the stage part is not displaced by the urging force accompanying the injection of the first resin into the cavity. Occurrence can be reliably prevented, and a more reliable semiconductor device can be obtained.

  Furthermore, a conductive layer is provided on the inner surface of the lid, and the conductive layer is electrically connected to the suspension lead in a state where the lid is installed, thereby comprising the conductive layer, the suspension lead, and the stage portion. An electrically continuous electromagnetic shield can be formed, and the semiconductor sensor chip housed in the space can be surrounded by this electromagnetic shield. Therefore, the first sealing resin layer and the second sealing are generated outside. Electromagnetic noise that permeates the space through the resin layer can be blocked by this electromagnetic shield, and the semiconductor sensor chip can be protected from noise. As a result, it is possible to prevent noise from reaching the semiconductor sensor chip and causing the diaphragm to vibrate, and to detect the pressure more accurately.

  Further, in the semiconductor device and the manufacturing method thereof according to the present invention, since the lead is provided with a bent portion, the upper surface on one end side of the lead can be exposed to the space defined by the lid. A wire can be attached to the chip and the upper surface on one end side of the lead to electrically connect each other, and this wire can also be covered with a lid and placed in the space. Thereby, for example, it is not necessary to extend the wire to the outside via the lid and electrically connect the semiconductor sensor chip in the space, and the wire can be reliably protected by the lid.

  Hereinafter, a semiconductor device and a manufacturing method thereof according to the first embodiment of the present invention will be described with reference to FIGS. The present embodiment relates to a semiconductor device that detects sound pressure such as sound generated outside, and relates to a semiconductor device manufactured using a lead frame.

As shown in FIGS. 1 to 2, the semiconductor device A according to the present embodiment is supported in a state where a plate-like stage portion 1 having a substantially rectangular shape in plan view and one end 2 a are connected to the stage portion 1 and lifted up. A plurality of suspension leads 2, a plurality of leads 3 extending from the side end side of the semiconductor device A toward the stage portion 1 so as to dispose one end 3 a in the vicinity of the stage portion 1, the stage portion 1 and the suspension lead A first sealing resin layer 4 for sealing 2 and the lead 3; a semiconductor sensor chip (sound pressure sensor chip) 5 having a rectangular shape in plan view fixed to the upper surface 1a of the stage portion 1; An amplifier 6 that is fixed to the upper surface 1a of the semiconductor substrate and amplifies an electrical signal output from the semiconductor sensor chip 5, a wire 7 that electrically connects the semiconductor sensor chip 5, the amplifier 6 and the lead 3, and a first sealing resin layer 4. Placed semiconductor cell A lid 9 having a substantially concave cross section that covers the subchip 5 and the amplifier 6 while forming a space (first space) 12 above the subchip 5 and the amplifier 6, and an outer surface 9 d of the lid 9 covering the first sealing resin layer 4. The fixed second sealing resin layer 10 is a main component.

  The stage portion 1 is formed with a through hole 1c penetrating from the upper surface 1a to the lower surface 1b. In addition, the stage portion 1 is provided with a hanging portion 1d that extends outward from each side end of the upper surface 1a and hangs down to the lower surface 4a side of the first sealing resin layer 4. The lower surface 1e on the front end side of 1d is flush with the lower surface 4a of the first sealing resin layer 4, and is exposed from the lower surface (the lower surface of the semiconductor device A) 4a of the first sealing resin layer 4. The upper surface 1 a of the stage portion 1 is exposed while being flush with the upper surface 4 b of the first sealing resin layer 4.

  The suspension leads 2 are each formed in a substantially plate shape and a substantially band shape, and one end 2 a is connected to the vicinity of the corner of the stage portion 1 having a substantially rectangular shape in plan view, and extends toward the outside of the stage portion 1. In addition, a bent portion 2b is provided at approximately the center in the extending direction of the suspension lead 2. The bent portion 2b is provided with one surface 2d parallel to the upper surface 2c located forward and rearward in the extending direction across the bent portion 2b. The one surface 2d is more than the upper surfaces 2c sandwiching the bent portion 2b. Is also disposed above the upper surface 1a of the stage portion 1. Here, in this suspension lead 2, the upper surface 2c from one end 2a to the bent portion 2b is arranged on substantially the same horizontal plane as the upper surface 1a of the stage portion 1, and the upper surface 2c from the bent portion 2b to the other end 2f is one end The lower surface 2e on the other end 2f side is arranged below the upper surface 2c from 2a to the bent portion 2b and below the lower surface 1b of the stage portion 1, and the lower surface 2a of the first sealing resin layer 4 It is exposed while being arranged on substantially the same horizontal plane.

  A plurality of leads 3 are provided between adjacent suspension leads 2 and extend from the outside toward the stage portion 1 while being orthogonal to the side ends of the opposing stage portions 1. Here, each lead 3 is extended so that the front end (one end) 3a thereof is arranged on the stage portion 1 side with respect to the bent portion 2b of the adjacent suspension lead 2. Further, each lead 3 is provided with a bent portion 3b in the extending direction, and the lower surface 3d from the other end 3c to the bent portion 3b is substantially the same as the lower surface 4a of the first sealing resin layer 4. It is exposed while being placed on a horizontal plane. On the other hand, the upper surface 3e from the bent portion 3b to the tip 3a is exposed while being arranged on substantially the same horizontal plane as the upper surfaces 1a and 4b of the stage portion 1 and the first sealing resin layer 4.

  The first sealing resin layer 4 that seals the stage portion 1, the suspension lead 2, and the lead 3 configured as described above includes a parallel upper surface 4 b and a lower surface 4 a and seals the bent portion 2 b of the suspension lead 2. The formed part protrudes upward. On the other hand, one end of the first sealing resin layer 4 is located above the lower surface 4a of the first sealing resin layer 4 in the portion surrounded by the lower surface 1b of the stage portion 1 and the hanging portion 1d. A concave portion 4c whose end is connected to the through hole 1c of the stage portion 1 is provided, and the second space 8 is configured by combining the concave portion 4c communicating with the through hole 1c. In the present embodiment, the width of the second space 8 is substantially the same as the width of the through hole 1 c in a cross-sectional view, and the semiconductor sensor chip 5 is installed on the upper surface 1 a of the stage portion 1. In a sealed state.

The semiconductor sensor chip 5 is formed in a substantially flat plate shape, and is formed with a concave portion 5c that is recessed from the lower surface 5a toward the upper surface 5b at a substantially center in a plan view from the lower surface 5a side. In this semiconductor sensor chip 5, the thinned portion by the concave portion 5c is a diaphragm (movable electrode) 5d, and the diaphragm 5d is deformed according to the amount of sound pressure such as sound applied to the diaphragm 5d. Deformation (vibration) is possible. Then, it is possible to detect the sound pressure by converting the deformation of the diaphragm 5d from an electric capacity into an electric signal, and to output an electric signal corresponding to the magnitude of the sound pressure. The semiconductor sensor chip 5 configured as described above is fixed to the upper surface 1a of the stage unit 1 via an insulating member 11 that electrically insulates the stage unit 1 and the semiconductor sensor chip 5 while facing the lower surface 5a. ing. At this time, the semiconductor sensor chip 5 is fixed so that the through-hole 1c of the stage portion 1 is disposed directly below the diaphragm 5d and the diaphragm 5d and the through-hole 1c face each other.

  Further, in the present embodiment, an amplifier 6 such as an operational amplifier formed as an IC (Integrated Circuit) is fixed to the upper surface 1a of the stage unit 1 via an insulating member 11, and the amplifier 6 is a semiconductor sensor. It is arranged in parallel with the chip 5.

  The semiconductor sensor chip 5 and the amplifier 6 installed in this way are provided with a plurality of bonding pads, respectively, through which the semiconductor sensor chip 5 and the amplifier 6 and the amplifier 6 and the lead are connected. 3 is connected to the upper surface 3e exposed to the upper surface 4b of the first sealing resin layer 4 and disposed in the first space 12 by wires 7, and the semiconductor sensor chip 5, the amplifier 6 and the lead 3 are electrically connected. Connected.

  The lid body 9 is formed in a substantially concave shape with the opening side facing downward, a flat top plate portion 9a, a side wall portion 9b connected to the top plate portion 9a and extending downward, and connected to the side wall portion 9b in the horizontal direction. It is comprised from the front-end | tip part 9c extended outside. Further, the top plate portion 9a of the lid body 9 is provided with an opening portion 9i that allows the outside and the first space 12 to communicate with each other. The opening portion 9i connects the inner surface 9f of the lid body 9 to the top plate portion 9a. It is formed to extend toward the upper side in the orthogonal direction. Further, a support member 9e is provided on the outer surface 9d of the lid body 9 located on the side wall portion 9b. One end of the support member 9e is connected to the outer surface 9d of the side wall portion 9b, and the front end of the support member 9e extends outward. The (other end) extends so as to reach the upper surface (the upper surface of the semiconductor device A) 10a of the second sealing resin layer 10. In addition, a conductive layer 9h is formed on the inner surface 9f of the lid 9 and the lower surface 9g of the tip 9c connected to the inner surface 9f by an appropriate means such as applying a conductive paste 9h. Here, in the present embodiment, the lower surface 9g of the distal end portion 9c also constitutes a part of the inner surface 9f of the lid body 9.

  The lid 9 configured in this manner has a part of the lower surface 9g of the tip part 9c to which the conductive paste 9h is fixed adhered to the one surface 2d of the bent part 2b of the suspension lead 2 and the other part of the lower surface 9g. Is placed in close contact with the upper surface 4 b of the first sealing resin layer 4 and placed on the upper surface 4 b of the first sealing resin layer 4. Thereby, a first space 12 is defined in a portion surrounded by the lid body 9 and the first sealing resin layer 4, and the semiconductor sensor chip 5, the amplifier 6, the wire 7 and the first space 12 are defined in the first space 12. Is paid. At this time, the lid body 9 is installed with a sufficient distance so that the conductive paste 9h provided on the inner surface 9f thereof is held in a non-contact state with the semiconductor sensor chip 5, the amplifier 6, and the wire 7. One surface 2d of the bent portion 2b exposed from the upper surface 4b of the sealing resin layer 4 is electrically connected to the conductive paste 9h. Thereby, the semiconductor sensor chip 5, the amplifier 6 and the wire 7 in the first space 12 are surrounded by an electromagnetic shield composed of the electrically conductive pace 9 h, the suspension lead 2 and the stage portion 1. .

  The second sealing resin layer 10 is provided in a range from the upper surface 4b of the first sealing resin layer 4 to the upper end of the opening 9i provided in the top plate portion 9a, and covers the outer surface 9d of the lid body 9. While being fixed to the upper surface 4b of the first sealing resin layer 4, it is formed so as to seal them. The upper surface (the upper surface of the semiconductor device A) 10a of the second sealing resin layer 10 is formed so as to be parallel to the lower surface (the lower surface of the semiconductor device A) 4a of the first sealing resin layer 4 and this second sealing. On the upper surface 10 a of the stop resin layer 10, the tip of the support member 9 e of the lid body 9 is arranged on the same plane.

  Next, a method for manufacturing the semiconductor device A having the above configuration will be described.

  The semiconductor device A is manufactured using a lead frame 20. First, as shown in FIGS. 3 to 4, a rectangular frame portion 21 that forms an outer peripheral rectangular frame and each of the rectangular frame portions 21. The plurality of leads 3 projecting inward from the outer peripheral side, the above-described suspension leads 2 extending inward from the corners of the rectangular frame portion 21, and the suspension leads 2 are connected. A lead frame 20 having the above-described stage portion 1 supported by the above is prepared. In the lead frame 20, the rectangular frame portion 21, the lead 3, and the suspension lead 2 are combined to form a frame portion 22.

  The lead frame 20 configured as described above is formed by subjecting a thin metal plate to press processing, etching processing, or both processing. In the present embodiment, the drooping portion 1d of the stage portion 1, the bent portion 3b of the lead 3, and the bent portion 2b of the suspension lead 2 are also formed at this stage. In addition, the through hole 1c of the stage portion 1 is also formed at this stage. It is formed with. The hanging portion 1d, the bent portion 3b, the bent portion 2b, and the through hole 1c are not necessarily formed at the same time. In particular, the through hole 1c may be processed by a method other than pressing or etching. It ’s good.

  When the lead frame 20 is prepared, as shown in FIGS. 3 and 5, a part of the frame portion 22 excluding the rectangular frame portion 21 and the lead 3 and a part of the suspension lead 2 is paired with a first pair. The mold is clamped by being sandwiched between the molds E and F. Here, of the pair of first molds E and F, one mold E arranged on the upper surface side of the lead frame 20 has an inner surface E1 bent on the upper surface 1a of the stage portion 1 and the lead 3. A flat surface that contacts the upper surface 3e on the tip 3a side of the portion 3b, a concave surface that engages with the bent portion 2b of the suspension lead 2, and an upper surface 2c that is outside the bent portion 2b of the suspension lead 2 and the folding of the lead 3. And a flat surface that abuts on the upper surface 3e outside the curved portion 3b. In addition, when the mold is clamped, the one mold E is inserted into the through hole 1c of the stage portion 1 while being inserted into the mold E, and the tip thereof is slightly more than the inner surface F1 of the other mold F. A protruding portion E2 is formed on the upper side. On the other hand, the other mold F arranged on the lower surface side of the lead frame 20 has a flat inner surface F1 and is clamped, and the lower surface 1e of the hanging portion 1d of the stage portion 1 and the lead 3 The lower surface 3d of the portion located outside the bent portion 3b and the lower surface 2e of the portion located outside the bent portion 2b of the suspension lead 2 are abutted.

When the mold is clamped using the pair of first molds E and F in this way, a molten first resin such as an epoxy resin is injected into the cavities of the first molds E and F, and the stage The portion 1, the lead 3, and the suspension lead 2 are embedded in the first resin to form the first sealing resin layer 4. Incidentally, since the stage portion 1 is connected to the suspension lead 2 and supported in a lifted state, and the lower surface 1e of the hanging portion 1d is in contact with the inner surface F1 of the other mold F, it is firmly held. It is assumed that the stage portion 1 does not change with the injection of one resin.
Next, at the stage where the first resin is cured and the first sealing resin layer 4 is formed, the first molds E and F are removed. At this stage, a concave portion 4c is defined below the stage portion 1 so as to communicate with the through-hole 1c and slightly above the lower surface 4a of the first sealing resin layer 4, thereby forming a second space 8. Is done.

  In this embodiment, at this stage, the lead frame 20 on which the first sealing resin layer 4 is formed is immersed in a plating solution such as silver, gold, or palladium. At this time, a direct current is supplied to the lead frame 20 by connecting the cathode of the DC power source to, for example, the rectangular frame portion 21 located outside the first sealing resin layer 4 of the lead frame 20 and the anode to the plating solution. Thus, as shown in FIG. 2, the plating layer 23 is formed on a portion of the lead 3 exposed from the first sealing resin layer 4 such as the upper surface 3 c on the one end 3 a side and the lower surface 3 d on the other end 3 c side. Incidentally, the plated layer 23 is used to connect (join) the lead 3 and the circuit board pattern, or to connect the semiconductor sensor chip 5 and the amplifier 6 when the semiconductor device A is mounted on a circuit board provided in a device such as a mobile phone. This is for improving the wettability of soldering when connecting (joining) the wire 7 for electrically connecting the lead 3 and the lead 3.

  Next, as shown in FIG. 6, the semiconductor sensor chip 5 and the amplifier 6 are fixed while being juxtaposed on the upper surface 1 a of the stage portion 1 through the insulating member 11. At this time, in the semiconductor sensor chip 5, the lower surface 5 a and the upper surface 1 a of the stage portion 1 are opposed to each other, and the diaphragm 5 d is disposed directly above the through hole 1 c of the stage portion 1 so as to be opposed. Further, wires 7 are bonded to the bonding pads of the semiconductor sensor chip 5 and the amplifier 6 and the lead 3 to electrically connect the semiconductor sensor chip 5, the amplifier 6 and the lead 3.

  Then, the lower surface 9g side of the distal end portion 9c of the lid body 9 is brought into contact with the one surface 2d of the bent portion 2b of the suspension lead 2 to electrically connect the conductive paste 9h and the suspension lead 2 while the lid body 9 is It is placed on the upper surface 4 b of the sealing resin layer 4, and the semiconductor sensor chip 5, the amplifier 6, and the wire 7 are covered with the lid 9, and a first space 12 is formed above them. At this time, the one surface 2d of the bent portion 2b is arranged so as to protrude above the upper surface 1a of the stage portion 1, so that when the lid body 9 is installed, the semiconductor sensor chip 5, the amplifier 6 and the wire 7 are connected. It is assumed that the lid body 9 does not contact and cause damage.

  Next, as shown in FIG. 7, clamping is performed with a pair of second molds G and H whose inner surfaces G1 and H1 are flat. At this time, one mold G arranged on the upper side is installed so that its inner surface G1 is in contact with the upper end of the opening 9i of the lid body 9 and the tip of the support member 9e, and the other is arranged on the lower side. The mold H is installed so that the inner surface H1 thereof is in surface contact with the lower surface 4a of the first sealing resin layer 4. Then, when the mold is clamped with the pair of second molds G and H, a molten second resin such as an epoxy resin is injected into the cavity, covering the outer surface 9d of the lid body 9 and first sealing. A second sealing resin layer 10 is formed which is fixed to the stopping resin layer 4 and seals them. Here, since the lid 9 is securely held by the upper end of the opening 9i and the tip of the support member 9e being in contact with the inner surface G1 of one mold G, the urging force accompanying the injection of the second resin It is said that it will not slip out.

  At the stage where the second resin is cured and the pair of second dies G and H are removed, finally, the unnecessary lead 3 and the suspension lead 2 on the outer side portion of the rectangular frame portion 21 of the lead frame 20 and the semiconductor device A are separated. Thus, the manufacture of the semiconductor device A is completed.

In the semiconductor device A manufactured as described above, sound pressure such as sound generated outside is guided to the first space 12 through the opening 9 i of the lid 9 and reaches the diaphragm 5 d of the semiconductor sensor chip 5. Accordingly, the diaphragm 5d vibrates with a deformation amount corresponding to the magnitude of the sound pressure. The sound pressure is detected by converting the deformation of the diaphragm 5d from an electric capacity into an electric signal . At this time, the electric signal output from the diaphragm 5d is sent to the amplifier 6 and amplified, so that the sound pressure can be detected more accurately. In the semiconductor device A of the present embodiment, the recessed portion 4c can be formed by setting the stage portion 1 in the lifted state and increasing the thickness of the first sealing resin layer 4, and the diaphragm 5d. The second space 8 on the lower surface 5a side can be formed with a large capacity. For this reason, even if the second space 8 is a sealed space, deformation of the diaphragm 5d is hindered by the pressure change in the space 8 caused by the vibration of the diaphragm 5d, and the detected sound pressure may be distorted. It is supposed not to be. Therefore, the diaphragm 5d is vibrated correctly with a deformation amount corresponding to the reached sound pressure.

  On the other hand, electromagnetic noise generated outside acts on the semiconductor device in addition to the sound pressure to be detected. This type of noise passes through the first sealing resin layer 4 and the second sealing resin layer 10 provided in the semiconductor device A of the present embodiment, reaches the semiconductor sensor chip 5, and causes an erroneous vibration of the diaphragm 5d. There is a risk of causing it. When noise reaches the diaphragm 5d in this way, the sound pressure detected by the semiconductor device is distorted, resulting in a loss of reliability of the semiconductor device. On the other hand, in the semiconductor device A of the present embodiment, a conductive paste 9h is provided on the lid 9, and the conductive paste 9h, the suspension lead 2 and the stage portion 1 are included in the first space 12. An electromagnetic shield surrounding the semiconductor sensor chip 5 and the like is provided. For this reason, noise transmitted through the first sealing resin layer 4 and the second sealing resin layer 10 can be blocked by the electromagnetic shield, and the noise does not reach the semiconductor sensor chip 5 in the first space 12. It is supposed to be. As a result, in the semiconductor device A of the present embodiment, the diaphragm 5d does not vibrate due to the influence of noise.

  Therefore, in the semiconductor device A and the method for manufacturing the semiconductor device A, sound pressure such as sound can reach the diaphragm 5d of the semiconductor sensor chip 5 through the first space 12 via the opening 9i of the lid 9. The diaphragm 5d can be vibrated by the second space 8 formed by the through hole 1c and the recess 4c. At this time, the second space 8 in a sealed state can be easily formed with a large capacity by changing the size of the protrusion E2 of the first mold E. When the diaphragm 5d vibrates in accordance with the pressure, it is possible to suppress a change in pressure in the second space 8 caused by the vibration. Therefore, the diaphragm 5d can be vibrated correctly without being affected by the pressure change, and the sound pressure can be detected accurately and accurately.

  The semiconductor device A of the present embodiment is manufactured using the lead frame 20, and the semiconductor sensor chip 5 is mounted by a relatively easy manufacturing method in which a metal thin plate is pressed or etched. Since a substrate can be formed, it can be made more excellent in mass productivity than a conventional method using a printed circuit board, and the manufacturing cost of the semiconductor device A and thus the cost of the semiconductor device A can be reduced. It is possible. Further, by manufacturing using the lead frame 20, it becomes possible to apply a resin sealing technique, and by sealing with the first sealing resin layer 4 and the second sealing resin layer 10, the semiconductor It becomes possible to make the device A excellent in durability and high in reliability.

  In addition, when the pair of first molds E and F are clamped and the first resin is injected into the cavity, the stage portion 1 is provided with the hanging portion 1d, thereby strengthening the stage portion 1 The stage portion 1 can be prevented from being displaced by the urging force accompanying the injection of the first resin. Further, since the support member 9e is provided on the lid body 9, the pair of second molds G and H are clamped, and the displacement of the lid body 9 due to the injection of the second resin into the cavity is prevented. It can be surely prevented.

  Also, the bent lead 2 is provided with a bent portion 2b, and the bent portion 2b is formed so that one surface 2d is disposed above the upper surface 1a of the stage portion 1. It is possible to prevent the lid 9 from coming into contact with the sensor chip 5, the amplifier 6, the wire 7 and the like to cause damage.

  Furthermore, the conductive paste 9h is provided on the lid 9, so that the semiconductor device A can be provided with an electromagnetic shield, and the diaphragm 5d can be prevented from being erroneously vibrated due to noise. Thereby, it can be set as the semiconductor device A which can detect an exact sound pressure.

  In addition, this invention is not limited to said 1st Embodiment, In the range which does not deviate from the meaning, it can change suitably. For example, in this embodiment, the stage portion 1 is provided with a hanging portion 1d, and it is described that the hanging portion 1d can prevent the stage portion 1 from being displaced due to the injection of the first resin. The stage portion 1 is supported by the suspension leads 2, and the protrusion E2 of the mold E is inserted and supported in the through hole 1c when the first resin is injected. Therefore, as shown in FIG. It may be formed without providing 1d. In the present embodiment, the conductive paste 9h is provided on the lid 9. However, for example, when the lid 9 is formed of a conductive material such as metal, the lid 9 itself is provided. Since it is possible to impart an electromagnetic shielding effect, the conductive paste 9h may not necessarily be provided. Furthermore, this type of conductive material need not be limited to a paste material.

  Furthermore, in this embodiment, the bent lead 2b is provided on the suspension lead 2, and the lid body 9 is installed in contact with the one surface 2d. As a result, the lid body 9 at the time of installation becomes the semiconductor sensor chip 5, the wire 7, etc. However, if the lid 9 is previously formed large so as not to contact the semiconductor sensor chip 5 or the wire 7 at the time of installation, the bent portion 2b is not provided on the suspension lead 2. It may be.

  Moreover, when forming the 1st sealing resin layer 4, you may make it provide the 1st sealing resin layer 4 further outside the bending part 2b, as shown in FIG. In this case, when the lid body 9 is installed, there is no possibility that the tip end portion 9c of the lid body 9 slides down from the one surface 2d of the bent portion 2b. Furthermore, as shown in FIG. 9, if the height of the first sealing resin layer 4 outside the bent portion 2b is set higher than the entire surface 2d, the lid body 9 can be further stably installed. Is done.

  In this embodiment, the lead frame 20 is immersed in the plating solution to form the plating layer 23 at the stage where the first sealing resin layer 4 is formed. The lead frame 20 may be immersed in a plating solution before the formation of one sealing resin layer 4 to form the plating layer 23 on the entire surface of the lead frame 20. When the plating layer 23 is formed on the entire surface of the lead frame 20 as described above, for example, palladium plating may be used, and the upper surface 3e of the lead 3 exposed from the first sealing resin layer 4 as in the present embodiment. In the case where the plating layer 23 is spot-formed on the lower surface 3d or the like, bismuth plating or the like may be applied in addition to gold plating or silver plating.

  In the present embodiment, the semiconductor sensor A includes the semiconductor sensor chip 5 and the amplifier 6 and both are installed on the stage unit 1. For example, even if the semiconductor sensor chip 5 alone detects sound pressure. In addition, the electric signal output from the semiconductor sensor chip 5 may be amplified by an amplifier 6 provided separately from the semiconductor device A.

  Further, although the semiconductor sensor chip 5 is fixed to the upper surface 1a of the stage portion 1 with the lower surface 5a facing, the semiconductor sensor chip 5 is installed with the upper surface 5b of the semiconductor sensor chip 5 facing the upper surface 1a of the stage portion 1. You may do it.

  Further, in the present embodiment, the opening 9i of the lid 9 is illustrated as being formed immediately above the diaphragm 5d of the semiconductor sensor chip 5, but the opening 9i is formed between the first space 12 and the outside. If it forms so that it may connect, the installation position does not need limitation. For example, when the opening 9i is formed by shifting from the upper side of the diaphragm 5d in the lateral direction, not only does the pressure detection accuracy decrease, but conversely, moisture or the like has entered the first space 12 through the opening 9i. At this time, since it is possible to prevent the moisture and the like from coming into direct contact with the diaphragm 5d, the pressure detection accuracy can be maintained or increased.

  Furthermore, in this embodiment, the cover member 9 is provided with a support member 9e, and the front end of the support member 9e is brought into contact with the inner surface G1 of one mold G, whereby the urging force accompanying the injection of the second resin. However, since the lid 9 is held so that the inner surface G1 of the mold G is in contact with the upper end of the opening 9i when the second resin is injected, the lid 9 is held. The support member 9e is not necessarily formed.

  Next, a semiconductor device and a method for manufacturing the semiconductor device according to the second embodiment of the present invention will be described with reference to FIGS. In the description of the present embodiment, the same reference numerals are assigned to configurations common to the first embodiment, and the detailed description thereof is omitted.

  In the semiconductor device B of the present embodiment, as shown in FIG. 10, the opening that allows the outside and the first space 12 to communicate with the top plate portion 9 a of the lid 9 is provided in the semiconductor device A shown in the first embodiment. The part 9i is not formed, and the first space 12 is sealed.

  On the other hand, the first sealing resin layer 4 is provided with a hole portion 4 d that communicates with the through hole 1 c of the stage portion 1 and opens on the lower surface 4 a of the first sealing resin layer 4. Here, the hole 4d of the present embodiment has a width larger than the width of the through hole 1c in a cross-sectional view, and the second space 8 is formed by combining the through hole 1c and the hole 4d. Has been.

  Next, a method for manufacturing the semiconductor device B having the above configuration will be described.

  This semiconductor device B is manufactured using the same lead frame 20 as in the first embodiment, and when the lead frame 20 is prepared, as shown in FIG. 3 and FIG. Then, the rectangular frame portion 21 and a portion excluding the lead 3 and a part of the suspension lead 2 are sandwiched between the pair of first molds M and N to perform mold clamping. Here, in the present embodiment, of the pair of first molds M and N, the other mold N arranged on the lower surface side of the lead frame 20 is provided with a protrusion N2 on the inner surface N1 side. The protrusion N2 is engaged with the projection N3 at the tip of the through hole 1c of the stage 1 during mold clamping, and the through hole 1c is closed. On the other hand, one mold M arranged on the upper surface side of the lead frame 20 has a flat surface whose inner surface M1 is in contact with the upper surface 3c on the tip side of the upper surface 1a of the stage portion 1 and the bent portion 3b of the lead 3. A concave surface that engages with the bent portion 2b of the suspension lead 2, and a plane that abuts on the upper surface 2c outside the bent portion 2b of the suspension lead 2 and the upper surface 3e outside the bent portion 3b of the lead 3, respectively. It is supposed to have.

  When the pair of first molds M and N are clamped in this way, the molten first resin is injected into the cavities of the first molds M and N, and the first sealing resin layer 4 is formed. Form. Then, at the stage where the first resin is cured and the first molds M and N are removed, a hole that communicates with the through hole 1c and opens on the lower surface 4a of the first sealing resin layer 4 below the stage portion 1. The part 4d is formed, and the second space 8 connected to the outside of the present embodiment is formed.

  Next, as shown in FIG. 12, as in the first embodiment, the semiconductor sensor chip 5 and the amplifier 6 are fixed to the upper surface 1a of the stage portion 1 and the wire 7 is connected to the one surface 2d of the bent portion 2b. The lid body 9 is installed while the front end portion 9c is brought into contact therewith to form a sealed first space 12. Then, as shown in FIG. 13, the pair of second molds O and P are clamped to form the second sealing resin layer 10, and the first sealing resin layer 4 and the lid body 9 are sealed. To do. At this time, the inner surface O1 of one mold O is brought into contact with the tip of the support member 9e to firmly hold the lid 9, and the inner surface P1 of the other mold P is fixed to the lower surface 4a of the first sealing resin layer 4. When the mold is clamped by being brought into contact, the lid body 9 is prevented from being displaced by the urging force accompanying the injection of the second resin. At the stage where the second sealing resin layer 10 is formed, finally, the portion positioned outward from the first sealing resin layer 4 and the second sealing resin layer 10 of the lead frame 20 is separated and the semiconductor device B Manufacturing will be completed.

  In the semiconductor device B of the present embodiment configured as described above, the pressure can reach the diaphragm 5d of the semiconductor sensor chip 5 from the outside through the second space 8. The diaphragm 5d can be vibrated by the formation of the sealed first space 12, and at this time, the capacity of the first space 12 determines the size and shape of the lid 9. Since it can be easily changed by changing, it is also easy to suppress a pressure change accompanying the vibration of the diaphragm 5d, and the diaphragm 5d can be vibrated correctly.

  In addition, this invention is not limited to said 2nd Embodiment, In the range which does not deviate from the meaning, it can change suitably. For example, in the present embodiment, the hole 4d is formed to have a width larger than the width of the through hole 1c in a cross-sectional view, but may be formed with a width substantially the same as the width of the through hole 1c. It is. In this case, for example, when the projection E2 formed on one mold E of the pair of first molds E and F shown in the first embodiment is clamped, the other mold is used. A hole 4d that opens to the lower surface 4a of the first sealing resin layer 4 and has substantially the same width as the through-hole 1c may be formed by forming the F with the length that contacts the inner surface F1. .

1 is a diagram illustrating a semiconductor device according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view of the semiconductor device shown in FIG. 1. FIG. 2 is a view showing a lead frame used for manufacturing the semiconductor device of FIG. 1. FIG. 4 is a cross-sectional view of the lead frame shown in FIG. 3. It is a figure which shows the state which formed the 1st sealing resin layer using a pair of 1st metal mold | die in 1st Embodiment of this invention. It is a figure which shows the state which installed the cover body in 1st Embodiment of this invention. It is a figure which shows the state which formed the 2nd sealing resin layer using a pair of 2nd metal mold | die in 1st Embodiment of this invention. It is sectional drawing which shows the modification of the semiconductor device which concerns on 1st Embodiment of this invention. It is sectional drawing which shows the modification of the semiconductor device which concerns on 1st Embodiment of this invention. It is sectional drawing which shows the semiconductor device which concerns on 2nd Embodiment of this invention. It is a figure which shows the state which formed the 1st sealing resin layer using a pair of 1st metal mold | die in 2nd Embodiment of this invention. It is a figure which shows the state which installed the cover body in 2nd Embodiment of this invention. It is a figure which shows the state which formed the 2nd sealing resin layer using a pair of 2nd metal mold | die in 2nd Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Stage part, 1a ... Upper surface, 1b ... Lower surface, 1c ... Through-hole, 1d ... Hanging part, 1e ... Lower surface of hanging part, 2 ... Suspension lead, 2b ... Bending part, 2c ... Upper surface, 2d ... One side, 3 ... Lead, 3a ... One end (tip), 3b ... Bent part, 3c ... Other end, 3d ..Lower surface, 4 ... first sealing resin layer, 4a ... lower surface, 4b ... upper surface, 4c ... concave, 4d ... hole, 5 ... semiconductor sensor chip, 5a ..Lower surface, 5b ... Upper surface, 5c ... concave portion, 5d ... diaphragm, 6 ... amplifier, 7 ... wire, 8 ... second space, 9 ... lid , 9a ... Top plate portion, 9b ... Side wall portion, 9c ... Tip portion, 9d ... Outer surface, 9e ... Support member, 9f ... Inner surface, 9g ... Lower surface of the tip portion , 9h Conductive paste (conductive layer), 9i ... opening, 10 ... second sealing resin layer, 10a ... upper surface, 11 ... insulating member, 12 ... first space, DESCRIPTION OF SYMBOLS 20 ... Lead frame, 21 ... Rectangular frame part, 22 ... Frame part, 23 ... Plating layer, A, B ... Semiconductor device, E, F, M, N ... 1st Mold, G, H, O, P ... Second mold, E2, N2 ... Projection

Claims (13)

A semiconductor device comprising a semiconductor sensor chip formed with a diaphragm that is deformed by an applied pressure and detects the pressure according to the amount of deformation ,
A stage portion that is formed in a plate shape and to which the semiconductor sensor chip is fixed on the upper surface, a suspension lead that is connected to the stage portion and supports the lifted state, and one end disposed in the vicinity of the stage portion A first sealing resin layer that exposes the lead, the other end of the lead to the outside, and opens the upper portion of the stage portion to seal the stage portion, the suspension lead, and the lead; and the first seal A lid that is placed on the stop resin layer and covers the semiconductor sensor chip while forming a space above the semiconductor sensor chip, and a second sealing that covers the outer surface of the lid and is fixed to the first sealing resin layer A through hole is formed in the stage portion so as to face the diaphragm of the semiconductor sensor chip, and the first sealing resin layer communicates with the through hole while the first hole is formed in the first sealing resin layer. 1 Under the sealing resin layer A recess is formed to extend toward, said lid body, wherein a an opening for communicating state of the space to the outside is formed. A semiconductor device comprising a semiconductor sensor chip formed with a diaphragm that is deformed by an applied pressure and detects the pressure according to the amount of deformation ,
A stage portion that is formed in a plate shape and to which the semiconductor sensor chip is fixed on the upper surface, a suspension lead that is connected to the stage portion and supports the lifted state, and one end disposed in the vicinity of the stage portion A first sealing resin layer that exposes the lead, the other end of the lead to the outside, and opens the upper portion of the stage portion to seal the stage portion, the suspension lead, and the lead; and the first seal A lid that is placed on the stop resin layer and covers the semiconductor sensor chip while forming a sealed space above the semiconductor sensor chip, and a first cover that covers the outer surface of the lid and is fixed to the first sealing resin layer A through-hole is formed in the stage portion so as to face the diaphragm of the semiconductor sensor chip, and the first sealing resin layer communicates with the through-hole. While the first sealing Wherein a the hole opened to the lower surface of the fat layer is formed. The semiconductor device according to claim 1 or 2,
The semiconductor device according to claim 1, wherein the suspension lead is provided with a bent portion that is bent and forms a surface disposed above the stage portion. The semiconductor device according to any one of claims 1 to 3,
The semiconductor device, wherein the stage portion is provided with a hanging portion extending from a side end to a lower surface of the first sealing resin layer. The semiconductor device according to any one of claims 1 to 4,
A semiconductor device, wherein a conductive layer is formed on an inner surface of the lid. A semiconductor device according to any one of claims 1 to 5,
The semiconductor device according to claim 1, wherein a bent portion is provided between the one end and the other end of the lead, and an upper surface from the one end to the bent portion is exposed to the space. The semiconductor device according to any one of claims 1 to 6,
A semiconductor device, wherein the semiconductor sensor chip is a sound pressure sensor chip for detecting sound pressure. A method of manufacturing a semiconductor device including a semiconductor sensor chip formed with a diaphragm that is deformed by an applied pressure and detects the pressure according to the deformation amount ,
A lead frame comprising: a plate-like stage portion having a through hole; a suspension lead having one end connected to the stage portion and supporting the stage portion in a lifted state; and a lead having one end disposed in the vicinity of the stage portion. The lead frame is clamped using a pair of first molds provided with protrusions on one mold while the protrusions are inserted through the through holes, and the pair of first molds is prepared. A first sealing resin layer that fills the cavity of the first resin, defines a recessed portion that communicates with the through-hole by the protruding portion, and seals the stage portion, the suspension lead, and the lead. The semiconductor sensor chip is fixed to the stage portion while the diaphragm is opposed to the through-hole, and the lead exposed on the upper surface of the semiconductor sensor chip and the first sealing resin layer is formed. And a lid having an opening that covers the semiconductor sensor chip while forming a space above the semiconductor sensor chip and communicates the space with the outside is placed on the first sealing resin layer. In this stage, the first sealing resin layer and the lid are integrally held by using a pair of second molds to perform mold clamping, and the second resin is placed in the cavities of the pair of second molds. A second sealing resin layer that covers the outer surface of the lid and is fixed to the first sealing resin layer while maintaining a state of communication with the space by filling the space. Production method. A method of manufacturing a semiconductor device including a semiconductor sensor chip formed with a diaphragm that is deformed by an applied pressure and detects the pressure according to the deformation amount ,
A lead frame comprising: a plate-like stage portion having a through hole; a suspension lead having one end connected to the stage portion and supporting the stage portion in a lifted state; and a lead having one end disposed in the vicinity of the stage portion. The lead frame is clamped using a pair of first molds provided with protrusions on one mold while the protrusions are inserted through the through holes, and the pair of first molds is prepared. The first resin is filled in the cavity, and a hole that communicates with the through hole and opens to the outside is defined by the protrusion, and the stage, the suspension lead, and the lead are sealed. At the stage of forming the sealing resin layer, the semiconductor sensor chip is fixed to the stage portion with the diaphragm facing the through-hole, and is exposed on the upper surfaces of the semiconductor sensor chip and the first sealing resin layer. After electrically connecting the leads, a lid that covers the semiconductor sensor chip while forming a sealed space is placed on the first sealing resin layer. The first sealing resin layer and the lid are integrally held using two molds, and the mold is clamped, and the second resin is filled into the cavities of the pair of second molds to thereby form the lid A method of manufacturing a semiconductor device, comprising: forming a second sealing resin layer that covers an outer surface of a body and adheres to the first sealing resin layer. In the manufacturing method of the semiconductor device according to claim 8 or 9 ,
A method of manufacturing a semiconductor device, wherein, at the stage of preparing the lead frame, a bent portion having a surface disposed above the stage portion while being bent is formed on the suspension lead. In the manufacturing method of the semiconductor device in any one of Claims 8-10 ,
A method of manufacturing a semiconductor device, wherein, when the lead frame is prepared, a drooping portion extending from a side end of the stage portion to a lower surface of the first sealing resin layer is formed on the stage portion. In the manufacturing method of the semiconductor device in any one of Claims 8-11 ,
A method of manufacturing a semiconductor device, wherein a conductive layer is formed in advance on an inner surface of the lid placed on the first sealing resin layer. A method of manufacturing a semiconductor device according to any one of claims 8 to 12 ,
A method of manufacturing a semiconductor device, wherein a bent portion is formed between the one end and the other end of the lead in the stage of preparing the lead frame.

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