CN117590025A - Piezoresistive acceleration sensor - Google Patents
Piezoresistive acceleration sensor Download PDFInfo
- Publication number
- CN117590025A CN117590025A CN202410077880.6A CN202410077880A CN117590025A CN 117590025 A CN117590025 A CN 117590025A CN 202410077880 A CN202410077880 A CN 202410077880A CN 117590025 A CN117590025 A CN 117590025A
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- China
- Prior art keywords
- base
- substrate
- mounting
- acceleration sensor
- sensitive chip
- Prior art date
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Links
- 230000001133 acceleration Effects 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000003466 welding Methods 0.000 claims description 27
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000004382 potting Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 10
- 230000002159 abnormal effect Effects 0.000 abstract description 4
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 5
- ZEMPKEQAKRGZGQ-AAKVHIHISA-N 2,3-bis[[(z)-12-hydroxyoctadec-9-enoyl]oxy]propyl (z)-12-hydroxyoctadec-9-enoate Chemical compound CCCCCCC(O)C\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CC(O)CCCCCC)COC(=O)CCCCCCC\C=C/CC(O)CCCCCC ZEMPKEQAKRGZGQ-AAKVHIHISA-N 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
Abstract
The invention belongs to the technical field of acceleration sensors. The invention provides a piezoresistive acceleration sensor, which comprises a sensitive chip, a substrate, a base and a substrate mounting seat. The base is provided with a mounting side and a connecting side opposite to the mounting side, and the base is provided with an inner cavity which extends inwards from the end face of the connecting side. The base plate mount pad includes mount pad body and connecting portion, and sensitive chip installs on the base plate, and the base plate is fixed in on the mount pad body. The cavity is adapted to receive a substrate mount that is suspended from the connection side of the base by a connection. A gap is formed between the mounting seat body and the base, and the sensitive chip is isolated from the base by the gap. The influence of the strain of the base and the impact stress wave on the measurement precision and the impact resistance of the sensor can be improved. The influence of the deformation of the mounting structure of the base on the sensor sensitive unit can be obviously restrained, and the measurement accuracy of acceleration is improved; the sensitive chip can be prevented from being failed due to abnormal impact stress.
Description
Technical Field
The invention relates to the technical field of MEMS sensor packaging, in particular to a piezoresistive acceleration sensor.
Background
The piezoresistive acceleration sensor with metal package is widely applied in the field of vibration and impact measurement and is mainly characterized by higher measuring range and measuring bandwidth. In the field of vibration and impact measurement, the strain sensitivity of the base is a main measure of the performance quality of the sensor, the rigidity of the base is generally improved by increasing the thickness of the metal base of the sensor, and the influence of the strain of the mounting structure on the measurement result is reduced, but the sensor size and weight are increased by the mode, so that the sensor is not beneficial to miniaturization and lightweight design.
The piezoresistive acceleration sensor with most of metal packaging in industry is characterized in that a substrate and a base are assembled in a contact mode, namely, a rectangular or circular ceramic/printed board substrate is directly adhered to the inside of a metal base, and the substrate is directly contacted with the base. Meanwhile, in a high-impact application scene, a high-frequency impact stress wave signal is directly coupled with a mounting substrate of a sensitive chip through a metal base, and the sensitive chip is easy to lose efficacy due to abnormal impact stress.
Disclosure of Invention
In order to solve the above problems, the present invention provides a piezoresistive acceleration sensor.
A piezoresistive acceleration sensor comprises a sensitive chip, a substrate, a base and a substrate mounting seat. The base is provided with a mounting side and a connecting side opposite to the mounting side, and the base is provided with an inner cavity which extends inwards from the end face of the connecting side. The base plate mount pad includes mount pad body and connecting portion, and sensitive chip installs on the base plate, and the base plate is fixed in on the mount pad body. The cavity is adapted to receive a substrate mount that is suspended from the connection side of the base by a connection. A gap is formed between the mounting seat body and the base, and the sensitive chip is isolated from the base by the gap.
Preferably, the outer contour of the mounting seat body is semi-cylindrical, a mounting groove matched with the contour of the base plate is formed in the side plane of the mounting seat body, and the base plate is fixed in the mounting groove.
Specifically, a section of the base near the mounting side is a stud section. Preferably, the internal cavity extends into the stud segment, the stud segment accommodating at least part of the mount body. More preferably, the sensitive chip is located within the stud segment.
Preferably, the mounting seat body comprises a large-diameter section and a small-diameter section, wherein the large-diameter section is positioned on the outer side of the stud section, and at least part of the small-diameter section is positioned in the stud section. The sensitive chip is arranged on the small-diameter section positioned in the stud section.
Furthermore, the piezoresistive acceleration sensor further comprises an output lead, and a lead hole is formed in the connecting portion of the substrate mounting seat. The substrate is provided with a wire welding spot and a gold wire welding spot, the wire welding spot is positioned on the large-diameter section, and the gold wire welding spot is positioned on the small-diameter section. The gold wire welding spots are electrically conducted with the wire welding spots. The sensitive chip is electrically connected with the gold wire welding spots through gold wire leads. One end of the output lead is connected to the lead welding point, and the other end extends out of the base through the lead hole.
Preferably, the central axis of the base is located in a plane in which the sensitive direction of the sensitive chip is located.
Further, high-performance pouring sealant is coated on the positions of the wire welding spots on the substrate and the positions of the sensitive chip mounting positions, and a shielding layer is arranged on the output lead outside the base.
Preferably, the connecting portion has a disc shape, the diameter of the connecting portion is larger than the diameter of the mount body, and the connecting portion is connected to the connecting side of the base by laser welding in the circumferential direction.
The invention has the characteristics and advantages that: the piezoresistive acceleration sensor with the novel structure can improve the influence of the strain of the base and the impact stress wave on the measuring precision and the impact resistance of the sensor. The substrate on which the sensitive chip is mounted is not in direct contact with the base, so that the isolation of the strain and the stress of the base can be realized, the influence of the deformation of the mounting structure of the base on the sensor sensitive unit can be obviously restrained, and the measurement accuracy of the acceleration is improved; in addition, the high-frequency impact stress wave can be isolated, and the high-frequency impact stress wave is prevented from being directly coupled with a substrate on which the sensitive chip is mounted through the base, so that the sensitive chip is prevented from being failed due to abnormal impact stress.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a perspective view of an acceleration sensor of the present invention;
FIG. 2 is a schematic view of the structure of the susceptor, substrate mount, substrate and sense die of FIG. 1;
FIG. 3 is a schematic cross-sectional view of the base of FIG. 1;
FIG. 4 is an exploded view of the base, substrate mount and substrate;
FIG. 5 is an assembled schematic view of a substrate mount and a substrate;
fig. 6 is a schematic cross-sectional view of the acceleration sensor.
Reference numerals illustrate:
100-sensor, 10-base, 20-gap, 30-substrate mount, 40-substrate, 50-sensitive chip, 60-output lead;
11-mounting side, 12-connecting side, 13-stud segment, 14-inner cavity;
31-a mounting seat body, 311-a side plane, 32-a connecting part, 33-a mounting groove, 34-a large-diameter section, 35-a small-diameter section and 36-a lead hole;
41-wire welding spots, 42-gold wire leads and 43-gold welding spots;
61-shielding layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1 and 2, in a preferred embodiment, the piezoresistive acceleration sensor 100 (hereinafter referred to as a sensor) provided in the present invention is generally in the shape of a bolt, the sensitive direction is along the central axis of the sensor, the stud section of the bolt is the mounting side of the sensor, and the sensor is mounted on the measured object through the stud.
Referring to fig. 2, 4 and 6, the sensor 100 provided by the present invention includes a sense die 50, a substrate 40, a base 10 and a substrate mount 30. The sensitive chip 50 is mounted on the substrate 40, the substrate 40 is mounted on the substrate mounting base 30, and the substrate mounting base 30 is fixed on the base 10.
Specifically, with continued reference to fig. 2 and 3, the base 10 has a mounting side 11 for mounting the sensor to the object to be measured and a connection side 12 opposite the mounting side 11, the connection side 12 for securing the substrate mount 30; and, the base 10 has an interior cavity 14 adapted to receive the substrate mount 30, the interior cavity 14 extending inwardly from an end face of the connection side 12. Referring to fig. 2, 4 and 6, the substrate mount 30 includes a mount body 31 and a connection portion 32. The substrate 40 is fixed to the mount body 31. The substrate mount 30 is suspended from the connection side 12 of the base 10 by a connection 32. A gap 20 is formed between the outer wall of the mounting seat body 31 and the inner wall of the base 10, and the sensitive chip 50 and the base 10 are isolated by the gap 20.
The sensor 100 provided by the invention adopts a suspension type configuration to assemble the substrate mounting seat 30 with the sensitive chip and the base 10 into a whole, the substrate 40 with the sensitive chip 50 is not in direct contact with the base 10 by the gap 20 of the suspension structure, the isolation of the strain and the stress of the base is realized, the influence of the deformation of the mounting structure of the base 10 on the sensitive unit of the sensor can be obviously restrained, and the measurement precision of acceleration is provided; in addition, the high frequency shock stress wave can be isolated, and the high frequency shock stress wave is prevented from being directly coupled with the substrate 40 on which the sensitive chip 50 is mounted through the susceptor 10, thereby preventing the sensitive chip 50 from being failed due to abnormal shock stress.
The shape of the mount body 31 may be any shape such as a rectangular parallelepiped, a square, a cylinder, an ellipsoid, or the like, as long as the mounting substrate 40 is satisfied. To facilitate mounting of the substrate 40 and positioning of the sensitive chip 50, in some embodiments, referring to fig. 4 and 5, the outer contour of the mount body 31 is semi-cylindrical, and the substrate 40 is mounted on a side plane 311 of the semi-cylinder. Preferably, the mounting base body 31 is provided with a mounting groove 33 on a side surface 311 thereof, the mounting groove 33 being matched with the shape of the substrate 40, and the substrate 40 is fixed in the mounting groove 33. The mounting groove 33 is provided on the mount body 31, so that the substrate 40 can be more stably fixed. In a more preferred embodiment, the depth of the mounting groove 33 is adapted to the thickness of the substrate 40 such that the surface of the substrate 40 mounted in the mounting groove 33 is flush with the side plane 311 of the mount body 31. The sensor 100 measures acceleration mainly by means of the sensitive chip 50, and in order to improve the measurement accuracy of acceleration, in a more preferred embodiment, the sensitive direction of the sensor 100 is parallel to the mounting plane of the sensitive chip 50 on the substrate, and the central axis of the base 10 is located in the plane of the sensitive direction of the sensitive chip 50. Thereby realizing the accurate measurement of axial vibration and impact acceleration.
In some embodiments, referring to fig. 1 and 4, the outer profile of the base 10 is generally bolt-shaped, with a section of the base 10 adjacent the mounting side 11 being a stud section 13. The stud segment 13 is provided with external threads, and the sensor 100 is mounted on the object to be measured by the external threads on the stud segment 13.
To reduce the volume of the sensor 100, in some embodiments, the internal cavity 14 extends into the stud segment 13, referring to fig. 3, and referring to fig. 2 and 6, the stud segment 13 houses at least a portion of the mount body 31. Preferably, the sensitive chip 50 is located in the stud segment 13, so that the sensitive chip 50 is closer to the measured object, and the measurement accuracy is higher; and, the sensitive chip 50 is arranged in the stud segment, which is beneficial to further reducing interference.
Referring to fig. 4 and 5, in some embodiments, mount body 31 includes a large diameter section 34 and a small diameter section 35. Referring to fig. 2 and 6, the large diameter section 34 is located outside the stud section 13 and at least a portion of the small diameter section 35 is disposed within the stud section 13. Preferably, the sense die 50 is mounted on a small diameter section 35 located within the stud section 13.
Further, referring to fig. 1 and 6, in some embodiments, the sensor further includes an output lead 60. Referring to fig. 4 and 5, the connection portion 32 of the substrate mount 30 is provided with a lead hole 36. Referring to fig. 5 and 6, a wire bond pad 41 and a gold bond pad 43 are provided on a substrate 40. Since the wire bond pads 41 are larger and the gold bond pads 43 are smaller, for ease of placement, the substrate 40 preferably has a wide portion on the large diameter section 34 and a narrow portion on the small diameter section 35, the wire bond pads 41 are placed on the wide portion, the gold bond pads 43 are placed on the narrow portion, correspondingly, the wire bond pads 41 are placed on the large diameter section 34 of the substrate mount 30, and the sensitive die 50 and gold bond pads 43 are placed on the small diameter section 35 of the substrate mount 30. The gold wire bond 43 is in electrical communication with the wire bond 41, and the sensitive die 50 is in electrical communication with the gold wire bond 43 via the gold wire lead 42. One end of the output lead 60 is connected to the wire bond pad 41 and the other end extends out of the base 10 through the lead hole 36.
Specifically, in some embodiments, referring to fig. 6, sensor 100 is provided with a total of 4 output leads 60. In particular, the output lead 60, which is located outside the base 10, is provided with a shielding layer 61, which shields the signal lines with a shielded cable, improving the tamper resistance of the sensor.
Optionally, the substrate 40 is made of a printed board, and the substrate mounting base 30 is made of plastic, metal or the like; in a preferred embodiment, the substrate 40 is embodied as a ceramic substrate, the substrate mount 30 is embodied as a ceramic substrate mount, and the susceptor 10 is embodied as a metal susceptor. Referring to fig. 4 and 5, the outer contour of the mount body 31 of the substrate mount 30 is semi-cylindrical, the connection portion 32 of the substrate mount 30 is disc-shaped, and the diameter of the connection portion 32 is larger than that of the mount body 31. In some embodiments, the center of the connecting portion 32 and the center of the mount body 31 are both located on the center axis of the base 10, and the lead hole 36 is provided on the other half of the disk that is not opposite the mount body 31. Referring to fig. 6, the connection portion 32 suspends the substrate mount 30 to the connection side 12 of the base 10 by laser welding in the circumferential direction to secure the reliability of the connection. The substrate mounting seat 30 with a semi-cylindrical main body and made of ceramic material is assembled into the base 10 in a hanging mode from top to bottom, and a certain gap is reserved between the outer wall of the substrate mounting seat body 31 and the inner wall of the base 10 in the circumferential direction, so that the isolation of base strain and stress is realized.
The disc structure on the upper part of the substrate mounting seat 30 is connected with the top of the base 10 through high-strength laser welding, certain gaps exist between other positions and the base, the base strain from the mounting structure is completely isolated in this way, meanwhile, a stress wave direct propagation path does not exist between the impact stress wave from the mounting surface of the base and the sensitive chip, the impact stress wave can be attenuated to the greatest extent, and the impact resistance of the sensor is improved.
The sensing chip 50 of the sensor 100 adopts a piezoresistive operating principle, and implements acceleration sensing by using a piezoresistive effect and a wheatstone bridge principle. Referring to fig. 6, the output signal of the sensitive chip 50 is externally output through the gold wire leads 42, the gold wire pads 43, the wire pads 41, and the output leads 60.
When the sensor 100 is assembled, the ceramic substrate 40 and the substrate mounting seat 30 are assembled by adhesive, then the sensitive chip 50 is mounted on the ceramic substrate 40 by adhesive, one end of the gold wire lead 42 is welded on the PAD of the sensitive chip 50 by a WB (wire band) process, and the other end is welded on the gold wire welding spot 43 of the substrate 40, so that the electrical interconnection between the sensitive chip 50 and the substrate 40 is realized, and then the output lead 60 is welded with the corresponding wire welding spot 41. Finally, the welding spots and the sensitive chips are coated with proper pouring sealant, so that the positions of the wire welding spots 41, the golden wire welding spots 43 and the sensitive chips 50 on the substrate 40 are coated with high-performance pouring sealant, such as UV (ultraviolet) glue, and important sites are protected, so that the shock resistance of the sensor is further improved.
The foregoing is merely a few embodiments of the present invention and those skilled in the art may make various modifications or alterations to the embodiments of the present invention in light of the disclosure herein without departing from the spirit and scope of the invention.
Claims (10)
1. A piezoresistive acceleration sensor, comprising: a sensitive chip (50), a substrate (40), a base (10) and a substrate mounting seat (30); wherein,
the base (10) has a mounting side (11) and a connection side (12) opposite the mounting side (11), the base (10) having an interior cavity (14), the interior cavity (14) extending inwardly from an end face of the connection side (12);
the substrate mounting seat (30) comprises a mounting seat body (31) and a connecting part (32);
the sensitive chip (50) is mounted on the substrate (40), and the substrate (40) is fixed on the mounting seat body (31);
the inner cavity (14) is adapted to accommodate the substrate mount (30), the substrate mount (30) being suspended from the connection side (12) of the base (10) by the connection (32);
a gap (20) is formed between the mounting seat body (31) and the base (10), and the sensitive chip (50) and the base (10) are isolated by the gap (20).
2. Piezoresistive acceleration sensor according to claim 1, characterized in that the outer contour of the mounting base body (31) is semi-cylindrical, a mounting groove (33) matching the contour of the base plate (40) is arranged on the side plane (311) of the mounting base body (31), and the base plate (40) is fixed in the mounting groove (33).
3. Piezoresistive acceleration sensor according to claim 2, characterized in that the section of the base (10) near the mounting side (11) is a stud section (13).
4. A piezoresistive acceleration sensor according to claim 3, characterized in that the inner cavity (14) extends into the stud segment (13);
the stud segments (13) accommodate at least part of the mount body (31).
5. Piezoresistive acceleration sensor according to claim 4, characterized in that the sensitive chip (50) is located in the stud segment (13).
6. The piezoresistive acceleration sensor according to claim 5, characterized in that the mounting seat body (31) comprises a large diameter section (34) and a small diameter section (35), the large diameter section (34) being located outside the stud section (13), at least part of the small diameter section (35) being located inside the stud section (13);
the sensitive chip (50) is mounted on the small diameter section (35) within the stud section (13).
7. The piezoresistive acceleration sensor according to claim 6, characterized in, that it further comprises an output lead (60);
the connecting part (32) of the substrate mounting seat (30) is provided with a lead hole (36);
a wire welding point (41) and a gold wire welding point (43) are arranged on the substrate (40), the wire welding point (41) is positioned on the large-diameter section (34), and the gold wire welding point (43) is positioned on the small-diameter section (35);
the golden wire welding point (43) is electrically conducted with the wire welding point (41); the sensitive chip (50) is electrically connected with the gold wire welding spots (43) through a gold wire lead (42);
one end of the output lead (60) is connected to the wire bonding pad (41), and the other end extends out of the base (10) through the lead hole (36).
8. Piezoresistive acceleration sensor according to any one of the claims 1-7, characterized in, that the centre axis of the base (10) is located in the plane of the sensitive direction of the sensitive die (50).
9. Piezoresistive acceleration sensor according to claim 8, characterized in that the wire bond (41) position on the substrate (40) and the sensitive die (50) mounting position are both coated with a high performance potting compound; an output lead (60) located outside the base (10) is provided with a shielding layer (61).
10. Piezoresistive acceleration sensor according to claim 9, characterized in that the connection part (32) has a disc shape, the diameter of the connection part (32) being larger than the diameter of the mount body (31), the connection part (32) being connected to the connection side (12) of the base (10) in the circumferential direction by laser welding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410077880.6A CN117590025B (en) | 2024-01-19 | 2024-01-19 | Piezoresistive acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410077880.6A CN117590025B (en) | 2024-01-19 | 2024-01-19 | Piezoresistive acceleration sensor |
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| Publication Number | Publication Date |
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| CN117590025A true CN117590025A (en) | 2024-02-23 |
| CN117590025B CN117590025B (en) | 2024-03-19 |
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| CN202410077880.6A Active CN117590025B (en) | 2024-01-19 | 2024-01-19 | Piezoresistive acceleration sensor |
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004233072A (en) * | 2003-01-28 | 2004-08-19 | Hitachi Metals Ltd | Acceleration sensor |
| JP2005274219A (en) * | 2004-03-23 | 2005-10-06 | Matsushita Electric Works Ltd | Semiconductor acceleration sensor device and its manufacturing method |
| CN101082630A (en) * | 2007-07-09 | 2007-12-05 | 北京信息工程学院 | Novel piezoelectric quartz accelerameter |
| JP2010281776A (en) * | 2009-06-08 | 2010-12-16 | Dainippon Printing Co Ltd | Dynamic quantity sensor, method for manufacturing the same, and electronic apparatus using the same |
| CN102749167A (en) * | 2012-06-20 | 2012-10-24 | 北京大学 | Pressure sensor encapsulation structure containing silicon through holes |
| CN103954795A (en) * | 2014-04-30 | 2014-07-30 | 中国科学院地质与地球物理研究所 | MEMS accelerometer capable of being engineered |
| CN104181330A (en) * | 2013-05-24 | 2014-12-03 | 北京嘉岳同乐极电子有限公司 | Acceleration sensor |
| CN105181187A (en) * | 2015-09-09 | 2015-12-23 | 沈阳仪表科学研究院有限公司 | Silicon-based pressure sensor and manufacturing method thereof |
| CN210513403U (en) * | 2019-09-28 | 2020-05-12 | 高睿雅 | Composite sensor device for bullet train vehicle |
| CN218277703U (en) * | 2022-06-24 | 2023-01-10 | 烟台艾睿光电科技有限公司 | Infrared module packaging structure |
| CN116086593A (en) * | 2023-02-03 | 2023-05-09 | 哈尔滨工程大学 | Sound pressure vibration speed FFT sensor based on integration of N harmonic response MEMS sensitive units and working method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3139246B2 (en) * | 1993-11-09 | 2001-02-26 | 株式会社村田製作所 | Acceleration sensor |
-
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- 2024-01-19 CN CN202410077880.6A patent/CN117590025B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004233072A (en) * | 2003-01-28 | 2004-08-19 | Hitachi Metals Ltd | Acceleration sensor |
| JP2005274219A (en) * | 2004-03-23 | 2005-10-06 | Matsushita Electric Works Ltd | Semiconductor acceleration sensor device and its manufacturing method |
| CN101082630A (en) * | 2007-07-09 | 2007-12-05 | 北京信息工程学院 | Novel piezoelectric quartz accelerameter |
| JP2010281776A (en) * | 2009-06-08 | 2010-12-16 | Dainippon Printing Co Ltd | Dynamic quantity sensor, method for manufacturing the same, and electronic apparatus using the same |
| CN102749167A (en) * | 2012-06-20 | 2012-10-24 | 北京大学 | Pressure sensor encapsulation structure containing silicon through holes |
| CN104181330A (en) * | 2013-05-24 | 2014-12-03 | 北京嘉岳同乐极电子有限公司 | Acceleration sensor |
| CN103954795A (en) * | 2014-04-30 | 2014-07-30 | 中国科学院地质与地球物理研究所 | MEMS accelerometer capable of being engineered |
| CN105181187A (en) * | 2015-09-09 | 2015-12-23 | 沈阳仪表科学研究院有限公司 | Silicon-based pressure sensor and manufacturing method thereof |
| CN210513403U (en) * | 2019-09-28 | 2020-05-12 | 高睿雅 | Composite sensor device for bullet train vehicle |
| CN218277703U (en) * | 2022-06-24 | 2023-01-10 | 烟台艾睿光电科技有限公司 | Infrared module packaging structure |
| CN116086593A (en) * | 2023-02-03 | 2023-05-09 | 哈尔滨工程大学 | Sound pressure vibration speed FFT sensor based on integration of N harmonic response MEMS sensitive units and working method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 张丽杰 等: "一种免装配微惯性测量单元的研制与开发", 《中国惯性技术学报》, vol. 19, no. 06, 15 December 2011 (2011-12-15), pages 664 - 669 * |
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| Publication number | Publication date |
|---|---|
| CN117590025B (en) | 2024-03-19 |
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