CN116086593A - Sound pressure vibration speed FFT sensor based on integration of N harmonic response MEMS sensitive units and working method thereof - Google Patents
Sound pressure vibration speed FFT sensor based on integration of N harmonic response MEMS sensitive units and working method thereof Download PDFInfo
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- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
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Abstract
The invention discloses a sound pressure/vibration speed FFT sensor based on N harmonic response MEMS sensitive unit integration and a working method thereof. The sensitive chip is arranged on the signal processing array circuit board, the unit output electrode of the sensitive chip is connected with the input electrode on the signal processing array circuit board through the gold wire, the signal processing array circuit board is connected with the structure main body base through the screw, the signal processing circuit board is arranged below the signal processing array circuit board and connected with the structure main body base through the screw, the structure main body base is penetrated by the output cable, the wire skin and the shielding wire of the output cable are fixed on the structure main body base through the pressing plate, the core wire of the output cable is welded with the signal processing circuit board, and the signal processing array circuit board is welded with the signal processing circuit board through the lead. And an integrated sensitive chip formed by N harmonic response sensitive units is designed on a silicon chip structure by utilizing the MEMS technology and integrated with an array signal processing chip to realize the FFT sound pressure/vibration speed sensor with the fast Fourier transform function.
Description
Technical Field
The invention belongs to the field of sensors, and particularly relates to a sound pressure/vibration speed FFT sensor based on integration of N harmonic response MEMS sensitive units and a working method thereof.
Background
In the technical field of sensors, so far, most of the design ideas of the sensors aim at satisfying measurement, most of the sensors are linear measurement, and are biased to static measurement, and the measurement accuracy degree is taught, and the pressure sensor is taken as an example, and common technical indexes comprise sensitivity, frequency bandwidth, three precision indexes including nonlinearity, repeatability and hysteresis, five precision indexes including nonlinearity, repeatability, hysteresis, time drift and temperature drift, and the like. As for underwater acoustic sensors, most of the underwater acoustic sensors still maintain such a design concept, and evaluation indexes of the underwater acoustic sensors using such a design concept mainly include frequency bandwidth, in-band sensitivity and flatness, response consistency, and the like. Because the acoustic signal contains abundant frequency components, the measurement of the acoustic signal belongs to dynamic measurement, so that more attention is paid to whether the frequency response of the sensitivity is flat or not, whether the measurement is linear measurement or not can be ensured, and accurate information such as the magnitude of the measured signal can be obtained through a linear sensor. In underwater acoustic applications, the design of conventional underwater acoustic sensors also requires that the sensor have a linear response characteristic, and accurate measurement values with linear characteristics of the acoustic source information can be obtained, so that accurate and linearly-convertible front-end input information is provided for subsequent sonar signal processing.
The sensor designed for accurate measurement is generally very common and has strong application coverage. However, sensors specifically designed for feature information are not very practical, and therefore, they are rarely used because of their poor versatility. Due to the existence of marine environmental background noise, useful acoustic signals received by the underwater acoustic sensor are very weak, and many cases are submerged in noise, especially when the underwater acoustic sensor is remotely detected, acoustic signals sent by an acoustic source which can be received by the underwater acoustic sensor are very weak and are necessarily submerged in the environmental background noise, in which case the useful signals cannot be detected at all in the time domain, frequency domain transformation is required to be carried out on the time domain signals, incoherent noise is filtered, and then specific signal characteristics are found in the frequency domain. Therefore, the data information obtained by the conventional underwater acoustic sensor needs to be processed by complex signals to extract useful characteristic information, and complex algorithm technologies including fourier transform, noise suppression, characteristic spectrum generation, coherent detection and the like are needed to extract the target signal from background noise and detect and identify the characteristics, so that the system is complex. The essence of the underwater acoustic signal processing is to extract useful frequency domain characteristic signals, so whether the frequency domain signals can be directly detected by a special sensor can be designed only for the frequency domain characteristic information, therefore, a sound pressure/vibration speed FFT sensor which is integrated by N harmonic response MEMS sensitive units is provided, a conventional signal processing part can be omitted, the frequency domain characteristic information can be directly distinguished by the sensor, even a characteristic spectrum can be directly generated, and the target detection can be realized.
In 2015, the novel sensor system technology with near zero power consumption, which is provided and realized by the innovation of the DARPA in the United states, provides a new thought for the target detection technology, namely, a novel sensor which is only sensitive to the characteristic information is designed aiming at the detection of the target characteristic information, and the power consumption of the system can be greatly reduced by adopting the various characteristic sensing systems designed by the technology, so that the detection and the identification of the target characteristic information are realized. Based on MEMS technology, various sensor microsystems with nanowatt power consumption capability based on characteristic information such as sound or vibration have been realized.
The MEMS technology effectively realizes the miniaturization of the sensor, and along with the continuous progress of the MEMS technology, the sensor technology also obtains more and more technical breakthroughs. The progress of the 21 st century MEMS technology is mainly reflected in the continuous sinking of the process scale to the nanometer level and the extension of the material system, wherein the most important technical progress related to the expansion of the material technology is to realize the MEMS technology of the aluminum nitride material with piezoelectricity, the technology greatly promotes the breakthrough and the development of the piezoelectric MEMS sensor, expands the design and the application space of the sensor, and has important significance for the underwater acoustic sensor technology mainly comprising the piezoelectric material. As the aluminum nitride (AlN) is used as a novel MEMS piezoelectric sensitive material, the novel MEMS piezoelectric sensitive material has high sound velocity, thermal stability, structural piezoelectric stability, no need of polarization, wide band gap and other excellent physical and chemical properties, and has good innovation results and application in the aspects of novel high-frequency sound filtering, vibration energy acquisition, miniature hydrophones, piezoelectric ultrasonic transducers (PMUTs), inertial sensors, radio frequency resonators and other MEMS common sensing chip designs, so that the integration realization of a chip FFT sensor can be supported.
Disclosure of Invention
The invention provides a sound pressure/vibration speed FFT sensor based on N harmonic response MEMS sensitive units, which is characterized in that a sensitive chip formed by the N harmonic response sensitive units is designed by utilizing MEMS integration technology on the structure, and the sound pressure/vibration speed sensor with a fast Fourier transform function is realized by matching with an array signal processing chip.
The invention provides a working method of a sound pressure/vibration speed FFT sensor based on integration of N harmonic response MEMS sensitive units, which aims at high-sensitivity detection of sound source frequency characteristic information.
The invention is realized by the following technical scheme:
a sound pressure/vibration speed FFT sensor based on integration of N harmonic response MEMS sensitive units, wherein the FFT sensor comprises a sensitive chip 1, a gold wire 2, a signal processing array circuit board 3, a signal processing circuit board 4, a structural main body base 5, an acoustic packaging structure 6, a pressing plate 7, a shielding wire 8, a conducting wire 9, an output cable 10 and a packaging structure 11;
the sensor chip 1 is arranged on the signal processing array circuit board 3, a unit output electrode of the sensor chip 1 is connected with an input electrode on the signal processing array circuit board 3 through a metal wire 2, the signal processing array circuit board 3 is connected with the structural main body base 5 through a screw, the signal processing circuit board 4 is arranged below the signal processing array circuit board 3, the signal processing circuit board 4 is connected with the structural main body base 5 through a screw, an output cable 10 penetrates through a hole at the lower end of the structural main body base 5, a wire skin and a shielding wire 8 of the output cable 10 are fixed on the structural main body base 5 through a pressing plate 7, the pressing plate 7 is arranged below the signal processing circuit board 4, a core wire 10-1 of the output cable 10 is welded with the signal processing circuit board 4, and the signal processing array circuit board 3 is welded with the signal processing circuit board 4 through a wire;
an acoustic packaging structure 6 is arranged above the sensitive chip 1; and the output cable 10 is encapsulated by a potting material to form an encapsulation structure 11.
A sound pressure/vibration speed FFT sensor based on integration of N resonance response MEMS sensitive units is characterized in that the sensitive chip 1 comprises a sensitive unit I1-1, a sensitive unit II 1-2 and a … sensitive unit N1-N, the sensitive chip 1 is composed of N resonance response MEMS sound pressure/vibration speed sensitive units, and the sensitive units have sound pressure/vibration speed resonance sensitive characteristics.
A sound pressure/vibration speed FFT sensor based on integration of N harmonic response MEMS sensitive units, wherein N sensitive units are mutually independent; each sensitive unit is provided with a respective sensitive parameter; each sensitive unit is provided with a resonance frequency point which is different from the resonance frequency point; and carrying out structural integration on the N sensitive units through MEMS technology to form a sensitive chip 1 with the integrated structure.
A sound pressure/vibration velocity FFT sensor based on integration of N harmonic response MEMS sensitive units which employ multiple sensitive modes to design sound pressure, vibration or acceleration sensitive units including but not limited to first order sensitive modes or second order sensitive modes.
The signal processing array circuit board 3 specifically carries out matching amplification, adjustment and output on N mutually independent charge signals output by the sensitive units based on the sound pressure/vibration speed FFT sensor integrated by N harmonic response MEMS sensitive units;
or the functional logic circuit designed for different purposes can perform specific signal processing on the array signals output by the front end and is realized by the signal processing circuit board 4.
The acoustic packaging structure 6 adopts an acoustic packaging design which is transparent to the sound pressure FFT sensor, and the acoustic packaging structure 6 needs to adopt an acoustic packaging design which meets vibration pickup conditions to the vibration velocity FFT sensor.
An operating method of a sound pressure/vibration speed FFT sensor based on N harmonic response MEMS sensitive unit integration, which concretely comprises the following steps,
when a specific frequency f exists in the sound source to be detected k If the intrinsic resonance frequency of one sensitive unit in the MEMS integrated sound pressure/vibration speed sensitive chip with N resonance response units is matched with the intrinsic resonance frequency of the other sensitive unit, the resonance response units generate structural resonance;
when resonance occurs, the sensitive structure generates charge or voltage signals through force-electricity conversion and outputs the charge or voltage signals, so that high-sensitivity detection of narrowband characteristic signals near a resonance frequency point is realized;
when the tested sound source has a plurality of specific frequencies f k When the sound pressure or vibration characteristic signals are generated, the intrinsic resonance frequencies of a plurality of units corresponding to the specific frequency are matched in the sensitive chip, signals are output corresponding to the units, and the sensitivity and target identification of the specific characteristics are realized through the specific processing of the channel signals of the characteristic mark frequency.
A working method of a sound pressure/vibration speed FFT sensor based on N harmonic response MEMS sensitive unit integration is characterized in that time domain sensing information Fourier transform is realized on a sensor layer through array MEMS integration of a plurality of discrete resonance sensitive units, broadband time domain signals are directly subjected to frequency domain signal separation, and frequency domain characteristic information detection is directly realized.
A working method of a sound pressure/vibration speed FFT sensor based on integration of N harmonic response MEMS sensitive units is characterized in that the N harmonic response MEMS sensitive units are respectively sensitive to narrow-band frequency domain signals and output the narrow-band frequency domain signals, so that frequency domain characteristic information detection is realized. On the basis of realizing frequency domain feature detection, a plurality of narrow-band sensitive signals with narrow-band sensitive features are subjected to signal post-processing based on feature detection logic, so that detection and identification of targets can be directly realized.
The beneficial effects of the invention are as follows:
according to the invention, the MEMS sensitive units are integrated in an array manner, so that Fourier frequency domain transformation of time domain information can be directly realized on a sensor level, frequency spectrum information is directly output, complex signal processing processes such as filtering, time-frequency conversion and the like are omitted, and the volume load, hardware configuration and energy consumption requirements of the (underwater) acoustic detection system can be reduced.
Drawings
Fig. 1 is a schematic structural view of the present invention.
FIG. 2 is a schematic diagram of the structure of a sensitive chip according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The design mode of the sensor is adjusted by directly replacing a time domain and frequency domain transformation process in a signal processing technology by an FFT sensor to realize fusion innovation aiming at the detection purpose of sound source frequency characteristic information, a corresponding sensor is designed only for the detection of the frequency characteristic information, the sensor does not pursue uniform linear response of a full frequency band, but only carries out high-sensitivity detection aiming at the characteristic frequency information, whether the frequency characteristic information exists or not is judged, and the novel aluminum nitride piezoelectric MEMS technology is combined to provide a sound pressure/vibration speed FFT sensor which is realized by integrating N harmonic response MEMS sensitive units, so that the aim of detecting the sound source characteristic information is expected to be realized. The invention designs a sensitive chip formed by N harmonic response sensitive units by utilizing MEMS integrated technology structurally and integrates the sensitive chip with an array signal processing chip to realize the sound pressure/vibration speed sensor with the fast Fourier transform function.
A sound pressure/vibration speed FFT sensor based on integration of N harmonic response MEMS sensitive units, wherein the FFT sensor comprises a sensitive chip 1, a gold wire 2, a signal processing array circuit board 3, a signal processing circuit board 4, a structural main body base 5, an acoustic packaging structure 6, a pressing plate 7, a shielding wire 8, a conducting wire 9, an output cable 10 and a packaging structure 11;
the sensor chip 1 is arranged on the signal processing array circuit board 3, a unit output electrode of the sensor chip 1 is connected with an input electrode on the signal processing array circuit board 3 through a metal wire 2, the signal processing array circuit board 3 is connected with the structural main body base 5 through a screw, the signal processing circuit board 4 is arranged below the signal processing array circuit board 3, the signal processing circuit board 4 is connected with the structural main body base 5 through a screw, an output cable 10 penetrates through a hole at the lower end of the structural main body base 5, a wire skin and a shielding wire 8 of the output cable 10 are fixed on the structural main body base 5 through a pressing plate 7, the pressing plate 7 is arranged below the signal processing circuit board 4, a core wire 10-1 of the output cable 10 is welded with the signal processing circuit board 4, and the signal processing array circuit board 3 is welded with the signal processing circuit board 4 through a wire;
an acoustic packaging structure 6 is arranged above the sensitive chip 1; and the output cable 10 is encapsulated by a potting material to form an encapsulation structure 11.
A sound pressure/vibration speed FFT sensor based on integration of N resonance response MEMS sensitive units is characterized in that the sensitive chip 1 comprises a sensitive unit I1-1, a sensitive unit II 1-2 and a … sensitive unit N1-N, the sensitive chip 1 is composed of N resonance response MEMS sound pressure/vibration speed sensitive units, and the sensitive units have sound pressure/vibration speed resonance sensitive characteristics.
A sound pressure/vibration speed FFT sensor based on integration of N harmonic response MEMS sensitive units, wherein N sensitive units are mutually independent; each sensitive unit is provided with a respective sensitive parameter; each sensitive unit is provided with a resonance frequency point which is different from the resonance frequency point; and carrying out structural integration on the N sensitive units through MEMS technology to form a sensitive chip 1 with the integrated structure.
The N harmonic response MEMS sensitive units have resonance sensitive characteristics and narrow-band high-sensitivity characteristics, each unit has a specific resonance frequency point, the N harmonic response MEMS sensitive units respectively have different resonance frequency points, the combination of the N harmonic response MEMS sensitive units can cover a frequency bandwidth range, and compared with a traditional conventional sensor, the harmonic response MEMS sensitive units have higher sensitivity characteristics, so that the integrated FFT sensor has high sensitivity characteristics and broadband characteristics.
A sound pressure/vibration velocity FFT sensor based on integration of N harmonic response MEMS sensitive units which employ multiple sensitive modes to design sound pressure, vibration or acceleration sensitive units including but not limited to first order sensitive modes or second order sensitive modes. Different mode design methods can also be adopted corresponding to different sensitive modes; for hydroacoustic applications, one and two order sensitivity modes are typically employed.
The signal processing array circuit board 3 specifically performs matching amplification, adjustment and output on charge signals output by N mutually independent sensitive unit charge signals based on the sound pressure/vibration speed FFT sensor integrated by N harmonic response MEMS sensitive units;
or the functional logic circuit designed for different purposes can perform specific signal processing on the array signals output by the front end and is realized by the signal processing circuit board 4.
The specific signal processing is a specific processing method based on detection logic;
the specific method based on the detection logic is selected according to different characteristics, such as harmonic characteristic processing method, related characteristic processing method and the like.
The acoustic packaging structure 6 adopts an acoustic packaging design which is transparent to the sound pressure FFT sensor, and the acoustic packaging structure 6 needs to adopt an acoustic packaging design which meets vibration pickup conditions to the vibration velocity FFT sensor.
An operating method of a sound pressure/vibration speed FFT sensor based on N harmonic response MEMS sensitive unit integration, which concretely comprises the following steps,
when a specific frequency f exists in the sound source to be detected k If a certain sound pressure/vibration speed sensitive chip is integrated with MEMS (micro-electromechanical systems) with N resonance response unitsThe intrinsic resonance frequency of a sensitive unit is matched, and then the resonance response unit generates structural resonance;
when resonance occurs, the sensitive structure generates charge or voltage signals through force-electricity conversion and outputs the charge or voltage signals, so that high-sensitivity detection of narrowband characteristic signals near a resonance frequency point is realized;
when the tested sound source has a plurality of specific frequencies f k When the sound pressure or vibration characteristic signals are generated, the intrinsic resonance frequencies of a plurality of units corresponding to the specific frequency are matched in the MEMS integrated sound pressure/vibration speed sensitive chip with N resonance response sensitive units, signals are output corresponding to the units, and the sensitivity and target identification of the specific characteristics are realized through the specific processing of channel signals of the characteristic mark frequency.
The specific processing is processing based on a specific method of detection logic, wherein the specific method based on the detection logic is selected according to different characteristics, such as harmonic characteristic processing method, related characteristic processing method and the like.
A working method of a sound pressure/vibration speed FFT sensor based on N harmonic response MEMS sensitive unit integration is characterized in that time domain sensing information Fourier transform is realized on a sensor layer through array MEMS integration of a plurality of discrete resonance sensitive units, broadband time domain signals are directly subjected to frequency domain signal separation, and frequency domain characteristic information detection is directly realized.
The N harmonic response MEMS sensitive units are respectively sensitive to the narrow-band frequency domain signals and output narrow-band frequency domain characteristic signals, and on the basis of realizing characteristic detection, the narrow-band sensitive signals with narrow-band sensitive characteristics are further subjected to signal post-processing based on characteristic detection logic to directly realize detection and identification of targets.
Different from the prior technology for realizing frequency domain signal separation by carrying out Fourier transform through a signal processing circuit method, the FFT sensor completes the transformation from a time-frequency broadband information signal which is perceived and input by the sensor to a frequency domain narrowband signal of an output end through a chip integration technology by designing a single-frequency resonance sensor, and achieves the function of realizing Fourier frequency domain signal dispersion of a time domain signal through the sensor integration technology.
Claims (9)
1. The sound pressure/vibration speed FFT sensor based on the integration of N harmonic response MEMS sensitive units is characterized by comprising a sensitive chip (1), a gold wire (2), a signal processing array circuit board (3), a signal processing circuit board (4), a structural main body base (5), an acoustic packaging structure (6), a pressing plate (7), a shielding wire (8), a conducting wire (9), an output cable (10) and a packaging structure (11);
the sensor is characterized in that the sensor chip (1) is arranged on the signal processing array circuit board (3), a unit output electrode of the sensor chip (1) is connected with an input electrode on the signal processing array circuit board (3) through a gold wire (2), the signal processing array circuit board (3) is connected with the structural main body base (5) through a screw, the signal processing circuit board (4) is arranged below the signal processing array circuit board (3), the signal processing circuit board (4) is connected with the structural main body base (5) through a screw, an output cable (10) penetrates through a lower end hole of the structural main body base (5), a wire skin and a shielding wire (8) of the output cable (10) are fixed on the structural main body base (5) through a pressing plate (7), the pressing plate (7) is arranged below the signal processing circuit board (4), a core wire (10-1) of the output cable (10) is welded with the signal processing circuit board (4), and the signal processing array circuit board (3) is welded with the signal processing circuit board (4) through a wire (9);
an acoustic packaging structure (6) is arranged above the sensitive chip (1); and packaging the output cable (10) through a potting material to form a packaging structure (11).
2. The sound pressure/vibration speed FFT sensor based on N resonant response MEMS sensitive units integration according to claim 1, wherein the sensitive chip (1) comprises a sensitive unit I (1-1), a sensitive unit II (1-2) and a … sensitive unit N (1-N), the sensitive chip (1) is composed of N resonant response MEMS sound pressure/vibration speed sensitive units, and all the sensitive units have sound pressure/vibration speed resonance sensitive characteristics.
3. The sound pressure/vibration velocity FFT sensor integrated based on N harmonic MEMS sensing elements of claim 2, wherein N of the sensing elements are independent of each other; each sensitive unit is provided with a respective sensitive parameter; each sensitive unit is provided with a resonance frequency point which is different from the resonance frequency point; and carrying out structural integration on the N sensitive units through MEMS technology to form a sensitive chip (1) with the integrated structure.
4. A sound pressure/vibration velocity FFT sensor integrated based on N harmonic MEMS sensing units according to claim 2, characterized in that the sensing unit employs multiple sensing modes to design a sound pressure, vibration or acceleration sensing unit including but not limited to a first order sensing mode or a second order sensing mode.
5. A sound pressure/vibration velocity FFT sensor integrated based on N harmonic response MEMS sensing units according to claim 3, wherein the signal processing array circuit board (3) specifically performs matching amplification, adjustment and output on the charge signals output by N sensing units independent of each other;
or the functional logic circuit designed for different purposes can perform specific signal processing on the array signals output by the front end and is realized by the signal processing circuit board 4.
6. The acoustic pressure/vibration velocity FFT sensor based on N harmonic response MEMS sensing unit integration according to claim 1, wherein the acoustic packaging structure (6) adopts an acoustic packaging design that is transparent to sound pressure for the acoustic pressure FFT sensor, and the acoustic packaging structure (6) needs to adopt an acoustic packaging design that satisfies vibration pickup conditions for the vibration velocity FFT sensor.
7. A method of operation of a sound pressure/velocity FFT sensor based on an integration of N harmonic-response MEMS sensitive units according to any of claims 1-6, characterized in that the method of operation is in particular,
when a specific frequency f exists in the sound source to be detected k Is a sound pressure or vibration characteristic signal of (a)When the intrinsic resonance frequency of a certain sensitive unit in the MEMS integrated sound pressure/vibration speed sensitive chip with N resonance response units is matched, the resonance response units generate structural resonance;
when resonance occurs, the sensitive structure generates charge or voltage signals through force-electricity conversion and outputs the charge or voltage signals, so that high-sensitivity detection of narrowband characteristic signals near a resonance frequency point is realized;
when the tested sound source has a plurality of specific frequencies f k When the sound pressure or vibration characteristic signals are generated, the intrinsic resonance frequencies of a plurality of units corresponding to the specific frequency are matched in the sensitive chip, signals are output corresponding to the units, and the sensitivity and target identification of the specific characteristics are realized through the specific processing of the channel signals of the characteristic mark frequency.
8. The working method of the sound pressure/vibration speed FFT sensor based on the integration of N harmonic response MEMS sensitive units is characterized in that the Fourier transform of time domain sensing information is realized on a sensor layer through the integration of the array MEMS of a plurality of discrete resonance sensitive units, and the frequency domain signal separation is directly carried out on a broadband time domain signal, so that the detection of frequency domain characteristic information is directly realized.
9. The working method of the sound pressure/vibration speed FFT sensor based on the integration of N harmonic response MEMS sensitive units is characterized in that the N harmonic response MEMS sensitive units are respectively sensitive to narrowband frequency domain signals and output the narrowband frequency domain signals, and on the basis of realizing feature detection, the narrowband sensitive signals with narrowband sensitive features are further subjected to signal post-processing based on feature detection logic to directly realize detection and identification of targets.
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| CN117590025A (en) * | 2024-01-19 | 2024-02-23 | 中国工程物理研究院电子工程研究所 | Piezoresistive acceleration sensor |
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| CN117590025A (en) * | 2024-01-19 | 2024-02-23 | 中国工程物理研究院电子工程研究所 | Piezoresistive acceleration sensor |
| CN117590025B (en) * | 2024-01-19 | 2024-03-19 | 中国工程物理研究院电子工程研究所 | Piezoresistive acceleration sensor |
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