JPH0529136B2 - - Google Patents

Info

Publication number
JPH0529136B2
JPH0529136B2 JP61284950A JP28495086A JPH0529136B2 JP H0529136 B2 JPH0529136 B2 JP H0529136B2 JP 61284950 A JP61284950 A JP 61284950A JP 28495086 A JP28495086 A JP 28495086A JP H0529136 B2 JPH0529136 B2 JP H0529136B2
Authority
JP
Japan
Prior art keywords
layer
gate electrode
active layer
thin film
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61284950A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63137479A (ja
Inventor
Mitsuhiro Koden
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP28495086A priority Critical patent/JPS63137479A/ja
Priority to DE3752301T priority patent/DE3752301T2/de
Priority to EP87310516A priority patent/EP0270323B1/de
Priority to US07/125,961 priority patent/US4862234A/en
Publication of JPS63137479A publication Critical patent/JPS63137479A/ja
Publication of JPH0529136B2 publication Critical patent/JPH0529136B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H01L29/78666—

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP28495086A 1986-11-29 1986-11-29 薄膜トランジスタ Granted JPS63137479A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP28495086A JPS63137479A (ja) 1986-11-29 1986-11-29 薄膜トランジスタ
DE3752301T DE3752301T2 (de) 1986-11-29 1987-11-27 Verfahren zur Herstellung eines Dünnschichttransistors
EP87310516A EP0270323B1 (de) 1986-11-29 1987-11-27 Verfahren zur Herstellung eines Dünnschichttransistors
US07/125,961 US4862234A (en) 1986-11-29 1987-11-27 Thin-film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28495086A JPS63137479A (ja) 1986-11-29 1986-11-29 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS63137479A JPS63137479A (ja) 1988-06-09
JPH0529136B2 true JPH0529136B2 (de) 1993-04-28

Family

ID=17685169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28495086A Granted JPS63137479A (ja) 1986-11-29 1986-11-29 薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS63137479A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08228011A (ja) * 1994-12-14 1996-09-03 Toshiba Corp 半導体装置およびその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61187272A (ja) * 1985-02-14 1986-08-20 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスタとその製造方法
JPS61191072A (ja) * 1985-02-20 1986-08-25 Seiko Instr & Electronics Ltd 薄膜トランジスタとその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61187272A (ja) * 1985-02-14 1986-08-20 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスタとその製造方法
JPS61191072A (ja) * 1985-02-20 1986-08-25 Seiko Instr & Electronics Ltd 薄膜トランジスタとその製造方法

Also Published As

Publication number Publication date
JPS63137479A (ja) 1988-06-09

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term