JPH0528901B2 - - Google Patents
Info
- Publication number
- JPH0528901B2 JPH0528901B2 JP61055037A JP5503786A JPH0528901B2 JP H0528901 B2 JPH0528901 B2 JP H0528901B2 JP 61055037 A JP61055037 A JP 61055037A JP 5503786 A JP5503786 A JP 5503786A JP H0528901 B2 JPH0528901 B2 JP H0528901B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ohmic
- etching stopper
- active layer
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61055037A JPS62213278A (ja) | 1986-03-14 | 1986-03-14 | 薄膜トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61055037A JPS62213278A (ja) | 1986-03-14 | 1986-03-14 | 薄膜トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62213278A JPS62213278A (ja) | 1987-09-19 |
| JPH0528901B2 true JPH0528901B2 (enrdf_load_stackoverflow) | 1993-04-27 |
Family
ID=12987459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61055037A Granted JPS62213278A (ja) | 1986-03-14 | 1986-03-14 | 薄膜トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62213278A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5132745A (en) * | 1990-10-05 | 1992-07-21 | General Electric Company | Thin film transistor having an improved gate structure and gate coverage by the gate dielectric |
| US5198694A (en) * | 1990-10-05 | 1993-03-30 | General Electric Company | Thin film transistor structure with improved source/drain contacts |
| US5427962A (en) * | 1991-11-15 | 1995-06-27 | Casio Computer Co., Ltd. | Method of making a thin film transistor |
-
1986
- 1986-03-14 JP JP61055037A patent/JPS62213278A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62213278A (ja) | 1987-09-19 |
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