JPH0527501Y2 - - Google Patents
Info
- Publication number
- JPH0527501Y2 JPH0527501Y2 JP1988042830U JP4283088U JPH0527501Y2 JP H0527501 Y2 JPH0527501 Y2 JP H0527501Y2 JP 1988042830 U JP1988042830 U JP 1988042830U JP 4283088 U JP4283088 U JP 4283088U JP H0527501 Y2 JPH0527501 Y2 JP H0527501Y2
- Authority
- JP
- Japan
- Prior art keywords
- shutter
- evaporation source
- growth chamber
- growth
- axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001704 evaporation Methods 0.000 claims description 51
- 230000008020 evaporation Effects 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 26
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 12
- 238000013459 approach Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988042830U JPH0527501Y2 (de) | 1988-03-30 | 1988-03-30 | |
| DE68926577T DE68926577T2 (de) | 1988-03-30 | 1989-03-23 | Einrichtung zur Molekularstrahlepitaxie |
| EP92117113A EP0529687B1 (de) | 1988-03-30 | 1989-03-23 | Einrichtung zur Molekularstrahlepitaxie |
| DE68916457T DE68916457T2 (de) | 1988-03-30 | 1989-03-23 | Einrichtung zur Molekularstrahlepitaxie. |
| EP89105248A EP0335267B1 (de) | 1988-03-30 | 1989-03-23 | Einrichtung zur Molekularstrahlepitaxie |
| TW080105276A TW202485B (de) | 1988-03-30 | 1989-03-24 | |
| US07/329,313 US4944246A (en) | 1988-03-30 | 1989-03-27 | Molecular beam epitaxy apparatus |
| CA000594977A CA1333038C (en) | 1988-03-30 | 1989-03-29 | Molecular beam epitaxy apparatus |
| KR1019890004152A KR930010750B1 (ko) | 1988-03-30 | 1989-03-30 | 분자선 에피택시 장치 |
| CA000616594A CA1333039C (en) | 1988-03-30 | 1993-03-30 | Molecular beam epitaxy apparatus |
| KR1019930013044A KR930010751B1 (ko) | 1988-03-30 | 1993-07-09 | 분자선 에피택시 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988042830U JPH0527501Y2 (de) | 1988-03-30 | 1988-03-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01147271U JPH01147271U (de) | 1989-10-11 |
| JPH0527501Y2 true JPH0527501Y2 (de) | 1993-07-13 |
Family
ID=31269234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988042830U Expired - Lifetime JPH0527501Y2 (de) | 1988-03-30 | 1988-03-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0527501Y2 (de) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210615A (ja) * | 1985-03-15 | 1986-09-18 | Komatsu Ltd | 薄膜形成装置 |
| JPS62141716A (ja) * | 1985-12-17 | 1987-06-25 | Agency Of Ind Science & Technol | 分子線エピタキシヤル成長装置 |
-
1988
- 1988-03-30 JP JP1988042830U patent/JPH0527501Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210615A (ja) * | 1985-03-15 | 1986-09-18 | Komatsu Ltd | 薄膜形成装置 |
| JPS62141716A (ja) * | 1985-12-17 | 1987-06-25 | Agency Of Ind Science & Technol | 分子線エピタキシヤル成長装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01147271U (de) | 1989-10-11 |
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