JPH0526350B2 - - Google Patents

Info

Publication number
JPH0526350B2
JPH0526350B2 JP59227320A JP22732084A JPH0526350B2 JP H0526350 B2 JPH0526350 B2 JP H0526350B2 JP 59227320 A JP59227320 A JP 59227320A JP 22732084 A JP22732084 A JP 22732084A JP H0526350 B2 JPH0526350 B2 JP H0526350B2
Authority
JP
Japan
Prior art keywords
silicon
boron
phosphorus
oxide film
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59227320A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60121770A (ja
Inventor
Taiichi Inoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59227320A priority Critical patent/JPS60121770A/ja
Publication of JPS60121770A publication Critical patent/JPS60121770A/ja
Publication of JPH0526350B2 publication Critical patent/JPH0526350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP59227320A 1984-10-29 1984-10-29 半導体装置 Granted JPS60121770A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59227320A JPS60121770A (ja) 1984-10-29 1984-10-29 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59227320A JPS60121770A (ja) 1984-10-29 1984-10-29 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13587275A Division JPS593869B2 (ja) 1975-11-12 1975-11-12 シリコンゲ−ト型電界効果半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60121770A JPS60121770A (ja) 1985-06-29
JPH0526350B2 true JPH0526350B2 (enrdf_load_stackoverflow) 1993-04-15

Family

ID=16858954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59227320A Granted JPS60121770A (ja) 1984-10-29 1984-10-29 半導体装置

Country Status (1)

Country Link
JP (1) JPS60121770A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006520450A (ja) * 2003-03-20 2006-09-07 ルーカス・オートモーティブ・ゲーエムベーハー ディスクブレーキ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582465A (ja) * 1991-09-24 1993-04-02 Victor Co Of Japan Ltd 半導体装置およびｍｏｓ型ｆｅｔ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5020669A (enrdf_load_stackoverflow) * 1973-06-22 1975-03-05

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006520450A (ja) * 2003-03-20 2006-09-07 ルーカス・オートモーティブ・ゲーエムベーハー ディスクブレーキ

Also Published As

Publication number Publication date
JPS60121770A (ja) 1985-06-29

Similar Documents

Publication Publication Date Title
JPS5856409A (ja) 半導体装置の製造方法
JPS6246989B2 (enrdf_load_stackoverflow)
JPS582073A (ja) 電界効果型トランジスタ
JPS618931A (ja) 半導体装置の製造方法
JPH0526350B2 (enrdf_load_stackoverflow)
JPS593869B2 (ja) シリコンゲ−ト型電界効果半導体装置の製造方法
JPH0689870A (ja) 半導体素子の製造方法
JPS63122177A (ja) 半導体装置とその製造方法
JPH0740607B2 (ja) 薄膜トランジスタの製造方法
JPS634345B2 (enrdf_load_stackoverflow)
JPH01220438A (ja) 半導体装置の製造方法
JPS60127755A (ja) 半導体装置の製法
JPS61248476A (ja) 半導体装置の製造方法
JPS63117459A (ja) 絶縁ゲート電界効果トランジスタの製造方法
JPS5836505B2 (ja) 半導体記憶装置の製造方法
JPH0227769A (ja) 半導体装置
JPH11135801A (ja) 薄膜トランジスタの製造方法
JPS6341063A (ja) Ｍｏｓ集積回路の製造方法
KR890005848A (ko) 반도체 장치의 제조방법
JPH0442833B2 (enrdf_load_stackoverflow)
JPH0730114A (ja) Ｍｏｓ型トランジスタの製造方法
JPS62123708A (ja) 半導体薄膜の熱処理方法
JPH0458524A (ja) 半導体装置の製造方法
JPH04283966A (ja) Ｍｏｓ型半導体装置の製造方法
JPS6255312B2 (enrdf_load_stackoverflow)