JPS60121770A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60121770A
JPS60121770A JP59227320A JP22732084A JPS60121770A JP S60121770 A JPS60121770 A JP S60121770A JP 59227320 A JP59227320 A JP 59227320A JP 22732084 A JP22732084 A JP 22732084A JP S60121770 A JPS60121770 A JP S60121770A
Authority
JP
Japan
Prior art keywords
silicon
phosphorus
boron
oxide film
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59227320A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0526350B2 (enrdf_load_stackoverflow
Inventor
Taiichi Inoue
井上　泰一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59227320A priority Critical patent/JPS60121770A/ja
Publication of JPS60121770A publication Critical patent/JPS60121770A/ja
Publication of JPH0526350B2 publication Critical patent/JPH0526350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP59227320A 1984-10-29 1984-10-29 半導体装置 Granted JPS60121770A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59227320A JPS60121770A (ja) 1984-10-29 1984-10-29 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59227320A JPS60121770A (ja) 1984-10-29 1984-10-29 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13587275A Division JPS593869B2 (ja) 1975-11-12 1975-11-12 シリコンゲ−ト型電界効果半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60121770A true JPS60121770A (ja) 1985-06-29
JPH0526350B2 JPH0526350B2 (enrdf_load_stackoverflow) 1993-04-15

Family

ID=16858954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59227320A Granted JPS60121770A (ja) 1984-10-29 1984-10-29 半導体装置

Country Status (1)

Country Link
JP (1) JPS60121770A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367190A (en) * 1991-09-24 1994-11-22 Victor Company Of Japan, Ltd. Polysilicon semiconductor element having resistivity and work function controlled to required values

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10312478B4 (de) * 2003-03-20 2007-03-29 Lucas Automotive Gmbh Scheibenbremse

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5020669A (enrdf_load_stackoverflow) * 1973-06-22 1975-03-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5020669A (enrdf_load_stackoverflow) * 1973-06-22 1975-03-05

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367190A (en) * 1991-09-24 1994-11-22 Victor Company Of Japan, Ltd. Polysilicon semiconductor element having resistivity and work function controlled to required values

Also Published As

Publication number Publication date
JPH0526350B2 (enrdf_load_stackoverflow) 1993-04-15

Similar Documents

Publication Publication Date Title
JPS60121770A (ja) 半導体装置
JPS593869B2 (ja) シリコンゲ−ト型電界効果半導体装置の製造方法
JPH0797567B2 (ja) 薄膜の形成方法
JPH0350771A (ja) 半導体装置
JPS634345B2 (enrdf_load_stackoverflow)
JPS61248476A (ja) 半導体装置の製造方法
KR890005848A (ko) 반도체 장치의 제조방법
JPS6148791B2 (enrdf_load_stackoverflow)
JPS60134472A (ja) 半導体装置製造方法
JPS60192363A (ja) シヨツトキ障壁接合の製造方法
JPS6341063A (ja) Ｍｏｓ集積回路の製造方法
JPS59138363A (ja) 半導体装置及びその製造方法
JPS60153168A (ja) 半導体活性層の形成方法
JPS60257177A (ja) 化合物半導体素子の作製方法
JPS59222937A (ja) 半導体装置の製造方法
JPH0458524A (ja) 半導体装置の製造方法
JPH0254523A (ja) 半導体装置及びその製造方法
JPS6182478A (ja) 半導体装置の製造方法
JPS5895868A (ja) 半導体装置の製造方法
JPS5851509A (ja) 半導体装置の製造方法
JPS60227480A (ja) 半導体装置
JPH022308B2 (enrdf_load_stackoverflow)
JPS5819126B2 (ja) 半導体装置の製造方法
JPS605554A (ja) 半導体集積回路装置の製造方法
JPS60150677A (ja) 集積回路