JPH0524640B2 - - Google Patents

Info

Publication number
JPH0524640B2
JPH0524640B2 JP60004604A JP460485A JPH0524640B2 JP H0524640 B2 JPH0524640 B2 JP H0524640B2 JP 60004604 A JP60004604 A JP 60004604A JP 460485 A JP460485 A JP 460485A JP H0524640 B2 JPH0524640 B2 JP H0524640B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor
electrons
holes
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60004604A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61163592A (ja
Inventor
Hiroshi Fujasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koito Manufacturing Co Ltd
Original Assignee
Koito Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koito Manufacturing Co Ltd filed Critical Koito Manufacturing Co Ltd
Priority to JP60004604A priority Critical patent/JPS61163592A/ja
Publication of JPS61163592A publication Critical patent/JPS61163592A/ja
Publication of JPH0524640B2 publication Critical patent/JPH0524640B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
JP60004604A 1985-01-14 1985-01-14 半導体光学装置 Granted JPS61163592A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60004604A JPS61163592A (ja) 1985-01-14 1985-01-14 半導体光学装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60004604A JPS61163592A (ja) 1985-01-14 1985-01-14 半導体光学装置

Publications (2)

Publication Number Publication Date
JPS61163592A JPS61163592A (ja) 1986-07-24
JPH0524640B2 true JPH0524640B2 (enrdf_load_stackoverflow) 1993-04-08

Family

ID=11588642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60004604A Granted JPS61163592A (ja) 1985-01-14 1985-01-14 半導体光学装置

Country Status (1)

Country Link
JP (1) JPS61163592A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2547339B2 (ja) * 1988-03-04 1996-10-23 株式会社小松製作所 薄膜el素子
TW200947724A (en) 2008-01-14 2009-11-16 Ibm Using 3D integrated diffractive gratings in solar cells

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154794A (ja) * 1983-02-22 1984-09-03 日本電気株式会社 薄膜el素子
JPS59214199A (ja) * 1983-05-18 1984-12-04 株式会社デンソー 薄膜エレクトロルミネセンス素子

Also Published As

Publication number Publication date
JPS61163592A (ja) 1986-07-24

Similar Documents

Publication Publication Date Title
JP4685845B2 (ja) 半導体発光素子
US6525335B1 (en) Light emitting semiconductor devices including wafer bonded heterostructures
JP3643665B2 (ja) 半導体発光素子
US6372536B1 (en) II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction
TWI403002B (zh) 半導體發光元件
KR102587949B1 (ko) 질화물 기반의 발광 장치에서 정공 주입을 위한 이종 터널링 접합
JP2007173590A (ja) 半導体発光材料およびそれを用いた発光素子
JPH0614564B2 (ja) 半導体発光素子
US5475700A (en) Laser diode with electron and hole confinement and barrier layers
US20060081873A1 (en) High temperature light-emitting diodes
JP2002033513A (ja) 発光素子
WO1986005925A1 (en) Luminescent semiconductor element
JP3358556B2 (ja) 半導体装置及びその製造方法
JP2003519931A (ja) 相分離が抑制されたiii族窒化物半導体構造
JP2586349B2 (ja) 半導体発光素子
JPH0524640B2 (enrdf_load_stackoverflow)
JPS61144078A (ja) 半導体発光素子
CN1149684C (zh) 高亮度发光二极管
JPH0570277B2 (enrdf_load_stackoverflow)
GB2137812A (en) Semiconductor Device for Producing Electromagnetic Radiation
JP2003519930A (ja) 相分離が抑制されたiii族窒化物半導体構造
JP2004335792A (ja) 酸化物半導体発光素子
JPH07321409A (ja) 半導体レーザー素子
JPH0897518A (ja) 半導体発光素子
JPH0864908A (ja) 半導体素子