JPS61163592A - 半導体光学装置 - Google Patents
半導体光学装置Info
- Publication number
- JPS61163592A JPS61163592A JP60004604A JP460485A JPS61163592A JP S61163592 A JPS61163592 A JP S61163592A JP 60004604 A JP60004604 A JP 60004604A JP 460485 A JP460485 A JP 460485A JP S61163592 A JPS61163592 A JP S61163592A
- Authority
- JP
- Japan
- Prior art keywords
- heterojunction
- layer
- electrons
- holes
- substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60004604A JPS61163592A (ja) | 1985-01-14 | 1985-01-14 | 半導体光学装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60004604A JPS61163592A (ja) | 1985-01-14 | 1985-01-14 | 半導体光学装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61163592A true JPS61163592A (ja) | 1986-07-24 |
JPH0524640B2 JPH0524640B2 (enrdf_load_stackoverflow) | 1993-04-08 |
Family
ID=11588642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60004604A Granted JPS61163592A (ja) | 1985-01-14 | 1985-01-14 | 半導体光学装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61163592A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01225095A (ja) * | 1988-03-04 | 1989-09-07 | Komatsu Ltd | 薄膜el素子 |
US8299556B2 (en) | 2008-01-14 | 2012-10-30 | International Business Machines Corporation | Using 3d integrated diffractive gratings in solar cells |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59154794A (ja) * | 1983-02-22 | 1984-09-03 | 日本電気株式会社 | 薄膜el素子 |
JPS59214199A (ja) * | 1983-05-18 | 1984-12-04 | 株式会社デンソー | 薄膜エレクトロルミネセンス素子 |
-
1985
- 1985-01-14 JP JP60004604A patent/JPS61163592A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59154794A (ja) * | 1983-02-22 | 1984-09-03 | 日本電気株式会社 | 薄膜el素子 |
JPS59214199A (ja) * | 1983-05-18 | 1984-12-04 | 株式会社デンソー | 薄膜エレクトロルミネセンス素子 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01225095A (ja) * | 1988-03-04 | 1989-09-07 | Komatsu Ltd | 薄膜el素子 |
US8299556B2 (en) | 2008-01-14 | 2012-10-30 | International Business Machines Corporation | Using 3d integrated diffractive gratings in solar cells |
Also Published As
Publication number | Publication date |
---|---|
JPH0524640B2 (enrdf_load_stackoverflow) | 1993-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5548137A (en) | Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor | |
CN101771120B (zh) | 半导体发光元件 | |
US6372536B1 (en) | II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction | |
US20100207100A1 (en) | Radiation-Emitting Semiconductor Body | |
JP2785254B2 (ja) | 窒化ガリウム系化合物半導体発光素子 | |
EP1791189B1 (en) | Semiconductor device and method of semiconductor device fabrication | |
CN107240627A (zh) | 一种具有双掺杂多量子阱结构的紫外发光二极管 | |
US11342524B2 (en) | Light emitting element, light emitting device, and apparatus for producing light emitting element | |
US8890114B2 (en) | Light-emitting device | |
US20060081873A1 (en) | High temperature light-emitting diodes | |
US20210351320A1 (en) | Light-Emitting Element | |
Pankove | Low-voltage blue electroluminescence in GaN | |
CN209912898U (zh) | 量子点发光二极管 | |
US7768031B2 (en) | Light emitting device and method of producing a light emitting device | |
JPS61163592A (ja) | 半導体光学装置 | |
KR101369155B1 (ko) | 반도체 발광 디바이스 | |
KR20000024945A (ko) | 더블클래딩-더블헤테로구조를 갖는 질화갈륨계 발광소자의 제작방법 | |
JPS61144078A (ja) | 半導体発光素子 | |
CN113196880A (zh) | 发光元件、发光设备 | |
CN1149684C (zh) | 高亮度发光二极管 | |
Bochkareva et al. | Mechanism of the GaN LED efficiency falloff with increasing current | |
US20240008299A1 (en) | Light-emitting element | |
Zhang et al. | Voltage-controlled electroluminescence from SiO2 films containing Ge nanocrystals and its mechanism | |
JPS61165993A (ja) | 超薄膜半導体光学装置 | |
Saranya et al. | Parameter Analysis Review on Multiple Quantum Well based InGaN/GaN Light Emitting Diode |