JPH05226398A - 集積回路モジュール - Google Patents

集積回路モジュール

Info

Publication number
JPH05226398A
JPH05226398A JP4029782A JP2978292A JPH05226398A JP H05226398 A JPH05226398 A JP H05226398A JP 4029782 A JP4029782 A JP 4029782A JP 2978292 A JP2978292 A JP 2978292A JP H05226398 A JPH05226398 A JP H05226398A
Authority
JP
Japan
Prior art keywords
integrated circuit
wiring
circuit module
substrate
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP4029782A
Other languages
English (en)
Inventor
Norio Nitta
法生 新田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP4029782A priority Critical patent/JPH05226398A/ja
Publication of JPH05226398A publication Critical patent/JPH05226398A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/4917Crossed wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】 (修正有) 【目的】 高密度実装可能な配線自由度の高い絶縁被覆
ワイヤを用いた集積回路モジュールを提供する。 【構成】 集積回路素子を基板に載せ、素子の外部電極
パッド11a,11bと基板上に構成された共通電極パ
ッド19を絶縁被覆ワイヤ18で接続する。 【効果】 高密度配線においても本発明によれば自由に
配線でき、画期的高密度混成集積回路モジュールを実現
することができる。

Description

【発明の詳細な説明】
【0001】
【産業上の利用分野】本発明は集積回路上で高密度配置
される回路素子間に配線された集積回路モジュールに関
するものである。
【0002】
【従来の技術】従来、例えば複数個素子を実装した混成
集積回路においては樹脂封止等パッケージングされたI
Cを基板上で配線し構成していた。ところがICをチッ
プのまま配置し、ボンディングワイヤで直接基板に実装
すればパッケージの面積部分は省略でき、高密度実装が
可能となる。
【0003】しかし、近年のICの高集積化によって外
部電極パッドの数が増し、狭ピッチ化したためそのよう
な配線を施した場合互いに接触し、電気的に短絡してし
まう危険性がある。また、集積回路実装ではワイヤ線の
交互配線を皆無にしなければならないため、これが各素
子の配置、配置密度に大きな制約を与え、又仕様変更に
より電極配置が変更された場合でも回路パタンの変更を
余儀なくされ、多大の時間、労力、費用を要するという
欠点がある。
【0004】
【発明が解決しようとする課題】本発明は、上記した従
来の欠点を除去し、多ピン化・高密度化実装に対応した
絶縁被覆ワイヤを任意配線に積極的に使用するためにな
されたもので、従来、ワイヤボンディングに用いられて
きた通常のボンディング装置をそのまま使い、絶縁被覆
ワイヤ用にボンディング装置のもつパラメータと装置の
一部に若干の修正を加えたボンディング法を用いた任意
の集積回路外部電極端子パッド間または任意の外部電極
端子パッド、配線基板上または集積回路上の共通電極端
子パッド間の配線方式に関し、絶縁被覆ワイヤを使った
配線実装法を用いた集積回路モジュールを提供すること
を目的とする。
【0005】
【課題を解決するための手段】本発明の要旨とするとこ
ろは、集積回路素子の外部接続パッド部と他の集積回路
外部接続パッド部または回路配線基板上の共通パッドと
の間を絶縁被覆ワイヤを用いて配線してあり、電気的に
分岐させる共通パッドを基板上または集積回路素子上に
もつことを特徴とする集積回路モジュールにある。
【0006】
【作用・効果】本発明の実施には、通常のボンディング
装置を特別な改造をせずに、接触しても十分な絶縁耐力
をもち、裸金ワイヤと同程度の接合性をもつ絶縁被覆ワ
イヤを集積回路間、および集積回路と配線基板の間の接
合に使用する。接触による短絡の危険性のない配線は、
配線しようとする電極がワイヤの交差するような配置に
あっても何の配慮もなく配線することが可能となる。
【0007】以上の如く、自由な配線を実現する本発明
に従った配線方式は画期的な混成集積回路モジュール実
現に寄与するものである。
【0008】
【実施例】以下本発明を実施例に従って説明する。 実施例1 メモリーカードにおいて、共通パッドを基板上に設けて
ベアチップパッドと共通パッドを絶縁被覆ワイヤを使用
して接続した。TSOPパッケージ実装された4Mbi
tDRAM8個使用の8MBのメモリーカードは、既存
の実装では基板両面を使っていたが、本発明では同じ4
MbitDRAMメモリーベアチップが片面に実装され
ただけで済み、およそ2倍の実装集積密度が得られたこ
とになり、同じ体積ならば2倍の記憶容量が実現した。
【0009】実施例2 複数ASIC等ロジックICの電極パッド間を配線し
た。ベアチップ間距離(チップの寸法を含む)が半分に
なり、実装面積も4分の1が実現する。配線がほぼ半分
になったことにより線間容量が減少し、遅延等の問題が
解決され、高速動作可能なICモジュールが実現した。
【0010】
【発明の効果】以上説明したように、本発明によれば絶
縁被覆されたワイヤにより任意自由配線された実装法で
は、接触による電気的短絡による制約から開放され、集
積回路電極端子パッドから他のパッドへの直接配線や、
基板上や集積回路上に共通電極パッドを設けることによ
って、さらに外部への接続自由度をもった集積回路モジ
ュールを提供することができる。
【図面の簡単な説明】
【図1】素子間を通常ワイヤを使った交差接続の概略図
である。
【図2】本発明による共通パッドを持った交差接続の概
略図である。
【図3】本発明による直接的な交差接続の概略図であ
る。
【符号の説明】
11a, 11b ICチップ外部端子パッド 14 基板 15 基板上電線 16 基板上電極パッド 17 貫通電極 18 絶縁被覆ワイヤ 19 共通電極パッド

Claims (1)

    【特許請求の範囲】
  1. 【請求項1】 集積回路素子の外部接続パッド部と他の
    集積回路外部接続パッド部または回路配線基板上の共通
    パッドとの間を絶縁被覆ワイヤを用いて配線してあり、
    電気的に分岐させる共通パッドを基板上または集積回路
    素子上にもつことを特徴とする集積回路モジュール。
JP4029782A 1992-02-17 1992-02-17 集積回路モジュール Withdrawn JPH05226398A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4029782A JPH05226398A (ja) 1992-02-17 1992-02-17 集積回路モジュール

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4029782A JPH05226398A (ja) 1992-02-17 1992-02-17 集積回路モジュール

Publications (1)

Publication Number Publication Date
JPH05226398A true JPH05226398A (ja) 1993-09-03

Family

ID=12285587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4029782A Withdrawn JPH05226398A (ja) 1992-02-17 1992-02-17 集積回路モジュール

Country Status (1)

Country Link
JP (1) JPH05226398A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998026452A1 (en) * 1996-12-09 1998-06-18 Microbonds, Inc. High density integrated circuits and the method of packaging the same
CN100461398C (zh) * 2004-02-26 2009-02-11 飞思卡尔半导体公司 具有交叉导体装配件的半导体封装件及制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998026452A1 (en) * 1996-12-09 1998-06-18 Microbonds, Inc. High density integrated circuits and the method of packaging the same
CN100461398C (zh) * 2004-02-26 2009-02-11 飞思卡尔半导体公司 具有交叉导体装配件的半导体封装件及制造方法

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