JPH0518260B2 - - Google Patents

Info

Publication number
JPH0518260B2
JPH0518260B2 JP58124186A JP12418683A JPH0518260B2 JP H0518260 B2 JPH0518260 B2 JP H0518260B2 JP 58124186 A JP58124186 A JP 58124186A JP 12418683 A JP12418683 A JP 12418683A JP H0518260 B2 JPH0518260 B2 JP H0518260B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
well
region
channel misfet
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58124186A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6016455A (ja
Inventor
Noboru Itomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP58124186A priority Critical patent/JPS6016455A/ja
Publication of JPS6016455A publication Critical patent/JPS6016455A/ja
Publication of JPH0518260B2 publication Critical patent/JPH0518260B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58124186A 1983-07-08 1983-07-08 相補型ｍｉｓ半導体集積回路装置 Granted JPS6016455A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58124186A JPS6016455A (ja) 1983-07-08 1983-07-08 相補型ｍｉｓ半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58124186A JPS6016455A (ja) 1983-07-08 1983-07-08 相補型ｍｉｓ半導体集積回路装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4124885A Division JPH05152523A (ja) 1992-05-18 1992-05-18 相補型ｍｉｓ半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS6016455A JPS6016455A (ja) 1985-01-28
JPH0518260B2 true JPH0518260B2 (enExample) 1993-03-11

Family

ID=14879108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58124186A Granted JPS6016455A (ja) 1983-07-08 1983-07-08 相補型ｍｉｓ半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS6016455A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176619A (ja) * 1985-02-01 1986-08-08 Mitsui Toatsu Chem Inc α−メチルスチレン共重合体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3955210A (en) * 1974-12-30 1976-05-04 International Business Machines Corporation Elimination of SCR structure
JPS5238890A (en) * 1975-09-23 1977-03-25 Mitsubishi Electric Corp Semiconductor device
JPS54104290A (en) * 1978-02-02 1979-08-16 Nec Corp Complementary mos integrated circuit device

Also Published As

Publication number Publication date
JPS6016455A (ja) 1985-01-28

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