JPH0515300B2 - - Google Patents
Info
- Publication number
- JPH0515300B2 JPH0515300B2 JP61237642A JP23764286A JPH0515300B2 JP H0515300 B2 JPH0515300 B2 JP H0515300B2 JP 61237642 A JP61237642 A JP 61237642A JP 23764286 A JP23764286 A JP 23764286A JP H0515300 B2 JPH0515300 B2 JP H0515300B2
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- pattern
- positive photoresist
- ultraviolet
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23764286A JPS6392021A (ja) | 1986-10-06 | 1986-10-06 | ポジ型ホトレジストパタ−ンの熱安定化方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23764286A JPS6392021A (ja) | 1986-10-06 | 1986-10-06 | ポジ型ホトレジストパタ−ンの熱安定化方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6392021A JPS6392021A (ja) | 1988-04-22 |
JPH0515300B2 true JPH0515300B2 (en, 2012) | 1993-03-01 |
Family
ID=17018349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23764286A Granted JPS6392021A (ja) | 1986-10-06 | 1986-10-06 | ポジ型ホトレジストパタ−ンの熱安定化方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6392021A (en, 2012) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0427113A (ja) * | 1990-04-23 | 1992-01-30 | Tadahiro Omi | レジスト処理装置、レジスト処理方法及びレジストパターン |
US6620563B2 (en) * | 2001-03-08 | 2003-09-16 | Motorola, Inc. | Lithography method for forming semiconductor devices on a wafer utilizing atomic force microscopy |
EP1441121A2 (en) | 2003-01-27 | 2004-07-28 | Denso Corporation | Vapor-compression refrigerant cycle system with refrigeration cycle and rankine cycle |
US7181919B2 (en) * | 2004-03-31 | 2007-02-27 | Denso Corporation | System utilizing waste heat of internal combustion engine |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60135943A (ja) * | 1983-12-26 | 1985-07-19 | Dainippon Screen Mfg Co Ltd | レジスト層の強度向上方法および装置 |
JPS6352410A (ja) * | 1986-08-22 | 1988-03-05 | Hitachi Ltd | 半導体装置の製造方法および加熱処理装置 |
-
1986
- 1986-10-06 JP JP23764286A patent/JPS6392021A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6392021A (ja) | 1988-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3189773B2 (ja) | レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置 | |
US6376157B1 (en) | Method of manufacturing a semiconductor device, chemical solution to form fine pattern, and semiconductor device | |
JPH08503983A (ja) | フォトレジスト用底部反射防止塗料における金属イオンの低減 | |
EP0256031A1 (en) | DEVELOPMENT PROCESS FOR POLYMETHACRYL ANHYDRIDE PHOTO PAINTS. | |
WO2001025854A1 (en) | Method for forming pattern | |
JPH07261393A (ja) | ネガ型レジスト組成物 | |
JPH0342492B2 (en, 2012) | ||
JPH0654390B2 (ja) | 高耐熱性ポジ型ホトレジスト組成物 | |
JP2552648B2 (ja) | ポジ型ホトレジストパタ−ンの安定化方法 | |
JP3789138B2 (ja) | 有機極性溶媒を含有するフォトレジスト組成物中の混入金属イオンをイオン交換により低減する方法 | |
JPS5857097B2 (ja) | レジストゲンゾウホウホウ | |
JP3765582B2 (ja) | ポジ型フォトレジスト用の混合溶剤系 | |
US4259369A (en) | Image hardening process | |
JPH0515300B2 (en, 2012) | ||
JPH0572747A (ja) | パターン形成方法 | |
JP3135585B2 (ja) | 2,4―ジニトロ―1―ナフトールを含有するポジ型フォトレジスト組成物 | |
JPS638739A (ja) | ポジ型ホトレジストパタ−ンの硬膜化方法 | |
JPH03253858A (ja) | パターン形成材料及びパターン形成方法 | |
KR102615655B1 (ko) | 포지티브 포토레지스트 조성물 및 이를 사용한 포토리소그라피 방법 | |
JP2000501754A (ja) | 高温蒸留を伴なわないノボラック樹脂の分離法および該樹脂からのフォトレジスト組成物 | |
JPH06110214A (ja) | レジストパターンの形成方法 | |
JPH0334053B2 (en, 2012) | ||
JPH09171951A (ja) | レジストパターンの形成方法 | |
JPH0474434B2 (en, 2012) | ||
JP4017231B2 (ja) | 化学増幅レジストの感度促進方法およびパターン形成方法 |