JPH0342492B2 - - Google Patents
Info
- Publication number
- JPH0342492B2 JPH0342492B2 JP58221985A JP22198583A JPH0342492B2 JP H0342492 B2 JPH0342492 B2 JP H0342492B2 JP 58221985 A JP58221985 A JP 58221985A JP 22198583 A JP22198583 A JP 22198583A JP H0342492 B2 JPH0342492 B2 JP H0342492B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- resist film
- pattern
- temperature
- irradiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 6
- 230000007261 regionalization Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 36
- 239000007789 gas Substances 0.000 description 12
- -1 aromatic azide compound Chemical class 0.000 description 11
- 238000000576 coating method Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 241000270708 Testudinidae Species 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- WQMWHMMJVJNCAL-UHFFFAOYSA-N 2,4-dimethylpenta-1,4-dien-3-one Chemical compound CC(=C)C(=O)C(C)=C WQMWHMMJVJNCAL-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUFXKBJMCRJATM-FMIVXFBMSA-N (e)-3-(4-methoxyphenyl)-1-phenylprop-2-en-1-one Chemical compound C1=CC(OC)=CC=C1\C=C\C(=O)C1=CC=CC=C1 XUFXKBJMCRJATM-FMIVXFBMSA-N 0.000 description 1
- MLIWQXBKMZNZNF-UHFFFAOYSA-N 2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1C(=CC=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-UHFFFAOYSA-N 0.000 description 1
- UZNOMHUYXSAUPB-UHFFFAOYSA-N 2,6-bis[(4-azidophenyl)methylidene]cyclohexan-1-one Chemical compound C1=CC(N=[N+]=[N-])=CC=C1C=C(CCC1)C(=O)C1=CC1=CC=C(N=[N+]=[N-])C=C1 UZNOMHUYXSAUPB-UHFFFAOYSA-N 0.000 description 1
- IVSBXRGTYAMDQU-UHFFFAOYSA-N 2,6-bis[3-(4-azidophenyl)prop-2-enylidene]cyclohexan-1-one Chemical compound C1=CC(N=[N+]=[N-])=CC=C1C=CC=C(CCC1)C(=O)C1=CC=CC1=CC=C(N=[N+]=[N-])C=C1 IVSBXRGTYAMDQU-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- DQFBYFPFKXHELB-UHFFFAOYSA-N Chalcone Natural products C=1C=CC=CC=1C(=O)C=CC1=CC=CC=C1 DQFBYFPFKXHELB-UHFFFAOYSA-N 0.000 description 1
- PRNUCJKOERXADE-YLNKAEQOSA-N Cinnamylideneacetone Chemical compound CC(=O)\C=C\C=C\C1=CC=CC=C1 PRNUCJKOERXADE-YLNKAEQOSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 235000005513 chalcones Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- WMKGGPCROCCUDY-PHEQNACWSA-N dibenzylideneacetone Chemical compound C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1 WMKGGPCROCCUDY-PHEQNACWSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- MQWCXKGKQLNYQG-UHFFFAOYSA-N methyl cyclohexan-4-ol Natural products CC1CCC(O)CC1 MQWCXKGKQLNYQG-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- UCUUFSAXZMGPGH-UHFFFAOYSA-N penta-1,4-dien-3-one Chemical compound C=CC(=O)C=C UCUUFSAXZMGPGH-UHFFFAOYSA-N 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001490 poly(butyl methacrylate) polymer Polymers 0.000 description 1
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- DQFBYFPFKXHELB-VAWYXSNFSA-N trans-chalcone Chemical compound C=1C=CC=CC=1C(=O)\C=C\C1=CC=CC=C1 DQFBYFPFKXHELB-VAWYXSNFSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58221985A JPS60115222A (ja) | 1983-11-28 | 1983-11-28 | 微細パタ−ン形成方法 |
| US06/672,763 US4590149A (en) | 1983-11-28 | 1984-11-19 | Method for fine pattern formation on a photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58221985A JPS60115222A (ja) | 1983-11-28 | 1983-11-28 | 微細パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60115222A JPS60115222A (ja) | 1985-06-21 |
| JPH0342492B2 true JPH0342492B2 (en, 2012) | 1991-06-27 |
Family
ID=16775263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58221985A Granted JPS60115222A (ja) | 1983-11-28 | 1983-11-28 | 微細パタ−ン形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4590149A (en, 2012) |
| JP (1) | JPS60115222A (en, 2012) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR930010248B1 (ko) * | 1984-09-14 | 1993-10-15 | 가부시끼가이샤 히다찌세이사꾸쇼 | 패턴 형성 방법 |
| JPS62127735A (ja) * | 1985-11-29 | 1987-06-10 | Toshiba Corp | 感光性樹脂組成物及びこれを用いたカラ−フイルタ−の製造方法 |
| JPS6381820A (ja) * | 1986-09-25 | 1988-04-12 | Toshiba Corp | レジストパタ−ン形成方法 |
| JP2538052B2 (ja) * | 1989-04-28 | 1996-09-25 | 松下電器産業株式会社 | レジスト重合促進加熱方法および装置 |
| US20030008968A1 (en) * | 2001-07-05 | 2003-01-09 | Yoshiki Sugeta | Method for reducing pattern dimension in photoresist layer |
| JP4761289B2 (ja) * | 2004-11-22 | 2011-08-31 | Ｈｏｙａ株式会社 | マーキング装置及びマーキング方法 |
| US8577488B2 (en) * | 2010-02-11 | 2013-11-05 | Monosol Rx, Llc | Method and system for optimizing film production and minimizing film scrap |
| US8986562B2 (en) | 2013-08-07 | 2015-03-24 | Ultratech, Inc. | Methods of laser processing photoresist in a gaseous environment |
| TWI639179B (zh) | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| CN113039486B (zh) | 2018-11-14 | 2024-11-12 | 朗姆研究公司 | 可用于下一代光刻法中的硬掩模制作方法 |
| KR20240165480A (ko) | 2018-12-20 | 2024-11-22 | 램 리써치 코포레이션 | 레지스트들의 건식 현상 |
| TWI849083B (zh) | 2019-03-18 | 2024-07-21 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TW202514284A (zh) | 2019-06-26 | 2025-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| KR102431292B1 (ko) | 2020-01-15 | 2022-08-09 | 램 리써치 코포레이션 | 포토레지스트 부착 및 선량 감소를 위한 하부층 |
| JP7702419B2 (ja) | 2020-02-28 | 2025-07-03 | ラム リサーチ コーポレーション | Ｅｕｖパターニングにおける欠陥低減のための多層ハードマスク |
| EP4235757A3 (en) | 2020-07-07 | 2023-12-27 | LAM Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| WO2022103764A1 (en) | 2020-11-13 | 2022-05-19 | Lam Research Corporation | Process tool for dry removal of photoresist |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2447225C2 (de) * | 1974-10-03 | 1983-12-22 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zum Ablösen von positiven Photolack |
| US4292384A (en) * | 1977-09-30 | 1981-09-29 | Horizons Research Incorporated | Gaseous plasma developing and etching process employing low voltage DC generation |
| US4241165A (en) * | 1978-09-05 | 1980-12-23 | Motorola, Inc. | Plasma development process for photoresist |
| JPS5569265A (en) * | 1978-11-15 | 1980-05-24 | Hitachi Ltd | Pattern-forming method |
| JPS56137347A (en) * | 1980-03-29 | 1981-10-27 | Tokyo Ohka Kogyo Co Ltd | Photosensitive composition for dry development |
| JPS5744143A (en) * | 1980-08-29 | 1982-03-12 | Tokyo Ohka Kogyo Co Ltd | Composition and method for forming micropattern |
| KR880002518B1 (ko) * | 1981-07-15 | 1988-11-26 | 미다가쓰시께 | 방사선 감응성 조성물 |
| US4439516A (en) * | 1982-03-15 | 1984-03-27 | Shipley Company Inc. | High temperature positive diazo photoresist processing using polyvinyl phenol |
| JPS58223149A (ja) * | 1982-06-22 | 1983-12-24 | Toray Ind Inc | 感光性ポリイミド用現像液 |
| DE3233912A1 (de) * | 1982-09-13 | 1984-03-15 | Merck Patent Gmbh, 6100 Darmstadt | Fotolacke zur ausbildung von reliefstrukturen aus hochwaermebestaendigen polymeren |
| US4433044A (en) * | 1982-11-15 | 1984-02-21 | Rca Corporation | Dry developable positive photoresists |
| US4551409A (en) * | 1983-11-07 | 1985-11-05 | Shipley Company Inc. | Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide |
-
1983
- 1983-11-28 JP JP58221985A patent/JPS60115222A/ja active Granted
-
1984
- 1984-11-19 US US06/672,763 patent/US4590149A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60115222A (ja) | 1985-06-21 |
| US4590149A (en) | 1986-05-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0342492B2 (en, 2012) | ||
| US6753129B2 (en) | Method and apparatus for modification of chemically amplified photoresist by electron beam exposure | |
| US5658711A (en) | Method of forming micropatterns | |
| JPS62164045A (ja) | ネガフオトレジスト組成物およびネガ画像の形成方法 | |
| US6713236B2 (en) | Lithography method for preventing lithographic exposure of peripheral region of semiconductor wafer | |
| US4481279A (en) | Dry-developing resist composition | |
| JPS6341047B2 (en, 2012) | ||
| JPH0822945A (ja) | 半導体装置の製造方法 | |
| JPH06148887A (ja) | 感光性樹脂組成物 | |
| JPH0128368B2 (en, 2012) | ||
| US5258267A (en) | Process for forming resist pattern | |
| JPS58118641A (ja) | 微細パタ−ン形成用放射線ポジ型レジスト | |
| JP2901044B2 (ja) | 三層レジスト法によるパターン形成方法 | |
| US4588675A (en) | Method for fine pattern formation on a photoresist | |
| JP2552648B2 (ja) | ポジ型ホトレジストパタ−ンの安定化方法 | |
| US4454200A (en) | Methods for conducting electron beam lithography | |
| JPH02248952A (ja) | 感光性組成物 | |
| JP2001318472A5 (en, 2012) | ||
| JP2675162B2 (ja) | 感光性樹脂組成物およびこれを用いたパターン形成方法 | |
| JPH045178B2 (en, 2012) | ||
| JP4768740B2 (ja) | 新規なレジスト材および基板へのパターン化レジスト層の形成方法 | |
| JPH0757995A (ja) | レジストパターン形成方法 | |
| JPS59121042A (ja) | ネガ型レジスト組成物 | |
| JPH0515300B2 (en, 2012) | ||
| JPH11174684A (ja) | パターン形成方法 |