JPS6392021A - ポジ型ホトレジストパタ−ンの熱安定化方法 - Google Patents
ポジ型ホトレジストパタ−ンの熱安定化方法Info
- Publication number
- JPS6392021A JPS6392021A JP23764286A JP23764286A JPS6392021A JP S6392021 A JPS6392021 A JP S6392021A JP 23764286 A JP23764286 A JP 23764286A JP 23764286 A JP23764286 A JP 23764286A JP S6392021 A JPS6392021 A JP S6392021A
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- ultraviolet rays
- positive type
- ultraviolet
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 39
- 230000006641 stabilisation Effects 0.000 title claims description 4
- 238000011105 stabilization Methods 0.000 title claims description 4
- 238000000034 method Methods 0.000 claims abstract description 43
- 238000011161 development Methods 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 abstract description 15
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052753 mercury Inorganic materials 0.000 abstract description 11
- 229910052724 xenon Inorganic materials 0.000 abstract description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 14
- 239000010410 layer Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 230000037303 wrinkles Effects 0.000 description 8
- 229940117955 isoamyl acetate Drugs 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000004132 cross linking Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 230000000087 stabilizing effect Effects 0.000 description 5
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229960003742 phenol Drugs 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- -1 aryl gallate Chemical compound 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 229940074391 gallic acid Drugs 0.000 description 2
- 235000004515 gallic acid Nutrition 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- QWBBPBRQALCEIZ-UHFFFAOYSA-N 2,3-dimethylphenol Chemical compound CC1=CC=CC(O)=C1C QWBBPBRQALCEIZ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 description 1
- DXFLGTVGTXWJOK-UHFFFAOYSA-N 4-[[4-(diethylamino)phenyl]diazenyl]benzene-1,3-diol Chemical compound OC1=C(C=CC(=C1)O)N=NC1=CC=C(C=C1)N(CC)CC DXFLGTVGTXWJOK-UHFFFAOYSA-N 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- BPTKLSBRRJFNHJ-UHFFFAOYSA-N 4-phenyldiazenylbenzene-1,3-diol Chemical compound OC1=CC(O)=CC=C1N=NC1=CC=CC=C1 BPTKLSBRRJFNHJ-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000001000 anthraquinone dye Substances 0.000 description 1
- 239000000987 azo dye Substances 0.000 description 1
- 229950011260 betanaphthol Drugs 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WXNRYSGJLQFHBR-UHFFFAOYSA-N bis(2,4-dihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O WXNRYSGJLQFHBR-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 238000006266 etherification reaction Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical group [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- ATGUVEKSASEFFO-UHFFFAOYSA-N p-aminodiphenylamine Chemical compound C1=CC(N)=CC=C1NC1=CC=CC=C1 ATGUVEKSASEFFO-UHFFFAOYSA-N 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N para-benzoquinone Natural products O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23764286A JPS6392021A (ja) | 1986-10-06 | 1986-10-06 | ポジ型ホトレジストパタ−ンの熱安定化方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23764286A JPS6392021A (ja) | 1986-10-06 | 1986-10-06 | ポジ型ホトレジストパタ−ンの熱安定化方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6392021A true JPS6392021A (ja) | 1988-04-22 |
JPH0515300B2 JPH0515300B2 (en, 2012) | 1993-03-01 |
Family
ID=17018349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23764286A Granted JPS6392021A (ja) | 1986-10-06 | 1986-10-06 | ポジ型ホトレジストパタ−ンの熱安定化方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6392021A (en, 2012) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991016724A1 (en) * | 1990-04-23 | 1991-10-31 | Tadahiro Ohmi | Resist processing device, resist processing method and resist pattern |
EP1441121A2 (en) | 2003-01-27 | 2004-07-28 | Denso Corporation | Vapor-compression refrigerant cycle system with refrigeration cycle and rankine cycle |
JP2004524694A (ja) * | 2001-03-08 | 2004-08-12 | モトローラ・インコーポレイテッド | ウエハ上に半導体デバイスを形成するリソグラフィー法および機器 |
US7181919B2 (en) * | 2004-03-31 | 2007-02-27 | Denso Corporation | System utilizing waste heat of internal combustion engine |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60135943A (ja) * | 1983-12-26 | 1985-07-19 | Dainippon Screen Mfg Co Ltd | レジスト層の強度向上方法および装置 |
JPS6352410A (ja) * | 1986-08-22 | 1988-03-05 | Hitachi Ltd | 半導体装置の製造方法および加熱処理装置 |
-
1986
- 1986-10-06 JP JP23764286A patent/JPS6392021A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60135943A (ja) * | 1983-12-26 | 1985-07-19 | Dainippon Screen Mfg Co Ltd | レジスト層の強度向上方法および装置 |
JPS6352410A (ja) * | 1986-08-22 | 1988-03-05 | Hitachi Ltd | 半導体装置の製造方法および加熱処理装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991016724A1 (en) * | 1990-04-23 | 1991-10-31 | Tadahiro Ohmi | Resist processing device, resist processing method and resist pattern |
US5516626A (en) * | 1990-04-23 | 1996-05-14 | Tadahiro Ohmi | Resist processing method |
JP2004524694A (ja) * | 2001-03-08 | 2004-08-12 | モトローラ・インコーポレイテッド | ウエハ上に半導体デバイスを形成するリソグラフィー法および機器 |
EP1441121A2 (en) | 2003-01-27 | 2004-07-28 | Denso Corporation | Vapor-compression refrigerant cycle system with refrigeration cycle and rankine cycle |
US7178358B2 (en) | 2003-01-27 | 2007-02-20 | Denso Corporation | Vapor-compression refrigerant cycle system with refrigeration cycle and Rankine cycle |
US7181919B2 (en) * | 2004-03-31 | 2007-02-27 | Denso Corporation | System utilizing waste heat of internal combustion engine |
Also Published As
Publication number | Publication date |
---|---|
JPH0515300B2 (en, 2012) | 1993-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6376157B1 (en) | Method of manufacturing a semiconductor device, chemical solution to form fine pattern, and semiconductor device | |
JPH08503983A (ja) | フォトレジスト用底部反射防止塗料における金属イオンの低減 | |
US4873177A (en) | Method for forming a resist pattern on a substrate surface and a scum-remover therefor | |
JPH07261393A (ja) | ネガ型レジスト組成物 | |
KR20040026105A (ko) | 미세 패턴 형성 재료, 미세 패턴 형성 방법 및 반도체장치의 제조 방법 | |
US4804612A (en) | Highly heat-resistant positive-working o-quinone diazide containing photoresist composition with novolac resin made from phenol with ethylenic unsaturation | |
JPH0342492B2 (en, 2012) | ||
JP3789138B2 (ja) | 有機極性溶媒を含有するフォトレジスト組成物中の混入金属イオンをイオン交換により低減する方法 | |
JP2552648B2 (ja) | ポジ型ホトレジストパタ−ンの安定化方法 | |
US4997748A (en) | Developer solution for positive-working resist composition | |
JPS6392021A (ja) | ポジ型ホトレジストパタ−ンの熱安定化方法 | |
JPH0572747A (ja) | パターン形成方法 | |
JPH02248952A (ja) | 感光性組成物 | |
JP3135585B2 (ja) | 2,4―ジニトロ―1―ナフトールを含有するポジ型フォトレジスト組成物 | |
JPS638739A (ja) | ポジ型ホトレジストパタ−ンの硬膜化方法 | |
JPH03253858A (ja) | パターン形成材料及びパターン形成方法 | |
JPS58214149A (ja) | 微細パタ−ン形成方法 | |
JPS62212646A (ja) | 感光性組成物 | |
JPH06110214A (ja) | レジストパターンの形成方法 | |
JP2506637B2 (ja) | パタ−ン形成方法 | |
JPH09171951A (ja) | レジストパターンの形成方法 | |
JP4017231B2 (ja) | 化学増幅レジストの感度促進方法およびパターン形成方法 | |
JPH0474434B2 (en, 2012) | ||
JPS63177518A (ja) | パタ−ン形成方法 | |
JPH0458170B2 (en, 2012) |