JPH0513385B2 - - Google Patents
Info
- Publication number
- JPH0513385B2 JPH0513385B2 JP60026964A JP2696485A JPH0513385B2 JP H0513385 B2 JPH0513385 B2 JP H0513385B2 JP 60026964 A JP60026964 A JP 60026964A JP 2696485 A JP2696485 A JP 2696485A JP H0513385 B2 JPH0513385 B2 JP H0513385B2
- Authority
- JP
- Japan
- Prior art keywords
- groove
- substrate
- capacitor
- insulating film
- element isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 32
- 238000002955 isolation Methods 0.000 claims description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60026964A JPS61187263A (ja) | 1985-02-14 | 1985-02-14 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60026964A JPS61187263A (ja) | 1985-02-14 | 1985-02-14 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61187263A JPS61187263A (ja) | 1986-08-20 |
| JPH0513385B2 true JPH0513385B2 (https=) | 1993-02-22 |
Family
ID=12207838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60026964A Granted JPS61187263A (ja) | 1985-02-14 | 1985-02-14 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61187263A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2608054B2 (ja) * | 1986-10-20 | 1997-05-07 | 三菱電機株式会社 | 半導体記憶装置の製造方法 |
| US4870029A (en) * | 1987-10-09 | 1989-09-26 | American Telephone And Telegraph Company, At&T-Technologies, Inc. | Method of forming complementary device structures in partially processed dielectrically isolated wafers |
-
1985
- 1985-02-14 JP JP60026964A patent/JPS61187263A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61187263A (ja) | 1986-08-20 |
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