JPS61187263A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61187263A
JPS61187263A JP60026964A JP2696485A JPS61187263A JP S61187263 A JPS61187263 A JP S61187263A JP 60026964 A JP60026964 A JP 60026964A JP 2696485 A JP2696485 A JP 2696485A JP S61187263 A JPS61187263 A JP S61187263A
Authority
JP
Japan
Prior art keywords
groove
substrate
film
silicon dioxide
element isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60026964A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0513385B2 (https=
Inventor
Seiji Ueda
誠二 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP60026964A priority Critical patent/JPS61187263A/ja
Publication of JPS61187263A publication Critical patent/JPS61187263A/ja
Publication of JPH0513385B2 publication Critical patent/JPH0513385B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP60026964A 1985-02-14 1985-02-14 半導体装置の製造方法 Granted JPS61187263A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60026964A JPS61187263A (ja) 1985-02-14 1985-02-14 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60026964A JPS61187263A (ja) 1985-02-14 1985-02-14 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61187263A true JPS61187263A (ja) 1986-08-20
JPH0513385B2 JPH0513385B2 (https=) 1993-02-22

Family

ID=12207838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60026964A Granted JPS61187263A (ja) 1985-02-14 1985-02-14 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61187263A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104372A (ja) * 1986-10-20 1988-05-09 Mitsubishi Electric Corp 半導体記憶装置
US4870029A (en) * 1987-10-09 1989-09-26 American Telephone And Telegraph Company, At&T-Technologies, Inc. Method of forming complementary device structures in partially processed dielectrically isolated wafers

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104372A (ja) * 1986-10-20 1988-05-09 Mitsubishi Electric Corp 半導体記憶装置
US4887136A (en) * 1986-10-20 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device and the method for manufacturing the same
US4980310A (en) * 1986-10-20 1990-12-25 Mitsubishi Denki Kabushiki Kaisha Method of making a trench dram cell
US4870029A (en) * 1987-10-09 1989-09-26 American Telephone And Telegraph Company, At&T-Technologies, Inc. Method of forming complementary device structures in partially processed dielectrically isolated wafers

Also Published As

Publication number Publication date
JPH0513385B2 (https=) 1993-02-22

Similar Documents

Publication Publication Date Title
US4672410A (en) Semiconductor memory device with trench surrounding each memory cell
US5235199A (en) Semiconductor memory with pad electrode and bit line under stacked capacitor
JPH0365905B2 (https=)
US4855952A (en) Dram having pip capacitor inside a trench
JPS62286270A (ja) 半導体メモリ装置
US5156993A (en) Fabricating a memory cell with an improved capacitor
US5292679A (en) Process for producing a semiconductor memory device having memory cells including transistors and capacitors
JPH04317358A (ja) 半導体装置の製造方法
US5330926A (en) Method of fabricating semiconductor device having a trenched cell capacitor
KR920010695B1 (ko) 디램셀 및 그 제조방법
JPH021163A (ja) 半導体記憶装置およびその製造方法
JPS6156445A (ja) 半導体装置
JPH02260453A (ja) 半導体記憶装置およびその製造方法
JPS6123360A (ja) 半導体記憶装置およびその製造方法
JPH01218056A (ja) 半導体メモリの製造方法
JPS60113460A (ja) ダイナミックメモリ素子の製造方法
JPS61187263A (ja) 半導体装置の製造方法
JPS6188554A (ja) 半導体メモリおよびその製造方法
JPH0369185B2 (https=)
US5329148A (en) Semiconductor device and preparing method therefor
JPH0294564A (ja) 半導体装置の製造方法
JPS60224260A (ja) 半導体記憶装置
JPS60113461A (ja) 半導体装置の製造方法
JPH0336309B2 (https=)
JPH0286165A (ja) 半導体記憶装置およびその製造方法