JPH0512852B2 - - Google Patents

Info

Publication number
JPH0512852B2
JPH0512852B2 JP57129355A JP12935582A JPH0512852B2 JP H0512852 B2 JPH0512852 B2 JP H0512852B2 JP 57129355 A JP57129355 A JP 57129355A JP 12935582 A JP12935582 A JP 12935582A JP H0512852 B2 JPH0512852 B2 JP H0512852B2
Authority
JP
Japan
Prior art keywords
layer
forming
insulating layer
amorphous silicon
molybdenum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57129355A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5919378A (ja
Inventor
Kyohiro Kawasaki
Sadakichi Hotsuta
Shigenobu Shirai
Hiroki Saito
Seiichi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57129355A priority Critical patent/JPS5919378A/ja
Publication of JPS5919378A publication Critical patent/JPS5919378A/ja
Publication of JPH0512852B2 publication Critical patent/JPH0512852B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
JP57129355A 1982-07-23 1982-07-23 絶縁ゲート型トランジスタの製造方法 Granted JPS5919378A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57129355A JPS5919378A (ja) 1982-07-23 1982-07-23 絶縁ゲート型トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57129355A JPS5919378A (ja) 1982-07-23 1982-07-23 絶縁ゲート型トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS5919378A JPS5919378A (ja) 1984-01-31
JPH0512852B2 true JPH0512852B2 (cs) 1993-02-19

Family

ID=15007544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57129355A Granted JPS5919378A (ja) 1982-07-23 1982-07-23 絶縁ゲート型トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5919378A (cs)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
JPH0746729B2 (ja) * 1985-12-26 1995-05-17 キヤノン株式会社 薄膜トランジスタの製造方法
JPH0691106B2 (ja) * 1987-11-30 1994-11-14 松下電器産業株式会社 絶縁ゲート型トランジスタの製造方法
JPH01303716A (ja) * 1988-05-31 1989-12-07 Agency Of Ind Science & Technol 薄膜形成方法
JPH0283941A (ja) * 1988-09-21 1990-03-26 Fuji Xerox Co Ltd 薄膜トランジスタの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58112365A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JPS5919378A (ja) 1984-01-31

Similar Documents

Publication Publication Date Title
JP2940880B2 (ja) 半導体装置およびその製造方法
US5189504A (en) Semiconductor device of MOS structure having p-type gate electrode
EP0935292A2 (en) Method of manufacturing a MOSFET
JPH1074946A (ja) 薄膜トランジスタおよびその製造方法
US6458636B1 (en) Method for forming polycrystalline silicon layer and method for fabricating thin film transistor
US6228728B1 (en) Method of fabricating semiconductor device
JPH0652741B2 (ja) 絶縁ゲート型トランジスタの製造方法
JPH02228042A (ja) 薄膜半導体装置の製造方法
JPH06196703A (ja) 薄膜トランジスタ及びその製造方法
JPH0512852B2 (cs)
JPH0746728B2 (ja) 半導体装置の製造方法
JPH0691103B2 (ja) 絶縁ゲ−ト型トランジスタの製造方法
JPH0564862B2 (cs)
JPH05243575A (ja) 薄膜トランジスタおよびその製造方法
JP2925007B2 (ja) 薄膜トランジスタの製造方法
JPH0423834B2 (cs)
JP2874062B2 (ja) 薄膜トランジスタの製造方法
JPS6136705B2 (cs)
JP2635086B2 (ja) 半導体装置の製造方法
JPH06275830A (ja) アキュムレーション型多結晶シリコン薄膜トランジスタ
JPS59124165A (ja) 絶縁ゲ−ト型トランジスタおよびその製造方法
JPS58219767A (ja) Ｍｉｓ型トランジスタの製造方法
JPH04186634A (ja) 薄膜半導体装置の製造方法
JP3319856B2 (ja) 半導体装置及びその製造方法
JPH05291567A (ja) 半導体装置及びその製造方法